The document discusses semiconductor heterostructures, focusing on their band diagrams and types such as n-n and p-n junctions. It explains band offsets, band bending, and current flow mechanisms like thermionic emission and quantum tunneling. Additionally, it highlights the significance of effective mass in quantum wells formed from materials with different bandgaps, affecting the electronic properties of the system.

1. Semiconductor
Heterostructures
27.Nov.2019

2. Band Diagrams in Real Space

3. Electron Affinity and Work Function

4. Junction types

5. Semiconductor N-N
Heterostructure

9. Semiconductor P-N
Heterojunction

12. Types of Semiconductor
Heterojunction

13. Band Offsets in Heterojunctions

14. Band Bending Heterostructure

15. Current flow by thermionic emission
or mechanical quantum tunneling

16. Quantum well
Schematic of a type I quantum
well made from a smaller
bandgap material B sandwiched
between a large bandgap
material A. The key difference in
semiconductor quantum wells is
that we need to use the
effective mass instead of the
free electron mass.
The confinement of electrons
and holes by quantum wells
alters the electronic properties
of the system.