Sapphire polishing
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This document discusses a polishing method for sapphire surfaces using a colloidal silica abrasive slurry. The slurry contains 10-40wt% colloidal silica with a pH above 8 and below 12. It is used in a chemical mechanical polishing process with a polyurethane polishing pad at a slurry flow rate of 400ml/min and 34.3KPa of normal downforce to achieve a polishing removal rate of at least 1400 angstroms per hour.
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◇回国时间很长，忘记办理；
◇回国马上就要找工作，办给用人单位看；
◇企事业单位必须要求办理的
◇需要报考公务员、购买免税车、落转户口
◇申请留学生创业基金
留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
6:个人职称评审加20分
7:个人信誉贷款加10分
8:在国家人才网主办的国家网络招聘大会中纳入资料，供国家高端企业选择人才
办理(爱大毕业证书)爱荷华大学毕业证【微信：741003700 】外观非常简单，由纸质材料制成，上面印有校徽、校名、毕业生姓名、专业等信息。
办理(爱大毕业证书)爱荷华大学毕业证【微信：741003700 】格式相对统一，各专业都有相应的模板。通常包括以下部分：
校徽：象征着学校的荣誉和传承。
校名:学校英文全称
授予学位：本部分将注明获得的具体学位名称。
毕业生姓名：这是最重要的信息之一，标志着该证书是由特定人员获得的。
颁发日期：这是毕业正式生效的时间，也代表着毕业生学业的结束。
其他信息：根据不同的专业和学位，可能会有一些特定的信息或章节。
办理(爱大毕业证书)爱荷华大学毕业证【微信：741003700 】价值很高，需要妥善保管。一般来说，应放置在安全、干燥、防潮的地方，避免长时间暴露在阳光下。如需使用，最好使用复印件而不是原件，以免丢失。
综上所述，办理(爱大毕业证书)爱荷华大学毕业证【微信：741003700 】是证明身份和学历的高价值文件。外观简单庄重，格式统一，包括重要的个人信息和发布日期。对持有人来说，妥善保管是非常重要的。
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Sapphire polishing
- 1. Patents about: Polishing of Sapphire in curve shape A. Eftekhary
- 2. Workpiece surface is: an optical surface, ceramic, metal, vitreous material.
- 5. Abrasive slurry: Colloidal silica pH of composition: >5 or <11 SSA/APD: >0.5 or <3
- 6. pH of colloidal silica: >8 to 12 Amount of colloidal silica: 10-40wt% RR: ≥ 1400˚A/hr Slurry flow rate: 400ml/min Normal downforce: 34.3KPa Polishing pad: polyurethane Defoaming agent: nonionic polymthylsiloxane agent Biocide: H2O2
- 8. • pH: 10-14 • Method: CMP • Amount of abrasive: 0.01-50wt% • PS of abrasives: 0.05-10μm • Polishing speed: 1.5-3 (μm/hr) • Significant improvement in polishing speed and reducing process time relative to colloidal silica
- 9. • Method: CMP • Colloidal silica: 1-50wt% • Particle size distribution:5-120nm • pH: 6-10.5 • Downforce of polishing pad:5-25psi • Polishing pad: polyurethane impregnated polyster felt pad
- 10. Average particle size of SiC: 40-300nm Average particle size of SiO2: <100nm (10- 300nm)