Rev 1
July 2005 1/19
19
STB10NK60Z/-1 - STP10NK60Z/FP
STW10NK60Z
N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247
Zener-Protected SuperMESH™ MOSFET
General features
■ TYPICAL RDS(on) = 0.65 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
■ LIGHTING
Package
Internal schematic diagram
Type VDSS RDS(on) ID Pw
STB10NK60Z
STB10NK60Z-1
STP10NK60ZFP
STP10NK60Z
STW10NK60Z
600 V
600 V
600 V
600 V
600 V
<0.75 Ω
<0.75 Ω
<0.75 Ω
<0.75 Ω
<0.75 Ω
10 A
10 A
10 A
10 A
10 A
115
115
35
115
156
1
2
3
1
2
3
1
2
3
1
3
1 2 3
TO-220 TO-220FP
TO-247
I²PAK
D²PAK
www.st.com
1 Absolute maximum ratings STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
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1 Absolute maximum ratings
Table 1. Absolute maximum ratings
Table 2. Thermal data
Symbol Parameter Value Unit
TO-220/D²/I²PAK TO-220FP TO-247
VDS Drain-Source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20kΩ) 600 V
VGS Gate-Source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 10
10
(Note 3)
10 A
ID Drain Current (continuous) at TC = 100°C 5.7
5.7
(Note 3)
5.7 A
IDM
Note 2
Drain Current (pulsed) 36
36
(Note 3)
36 A
PTOT Total Dissipation at TC = 25°C 115 35 156 W
Derating Factor 0.92 0.28 1.25 W/°C
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) 4000 V
dv/dt
Note 1
Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Volatge (DC) -- 2500 -- V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150 °C
TO-220
I²PAK
D²PAK TO-220FP TO-247 Unit
Rthj-case Thermal Resistance Junction-case Max 1.09 3.6 0.8 °C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max
(when mounted on minimum Footprint)
60 °C/W
Rthj-amb Thermal Resistance Junction-amb Max 62.5 50 °C/W
Tl
Maximum Lead Temperature For Soldering
Purpose
300 °C
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 1 Absolute maximum ratings
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Table 3. Avalanche characteristics
Table 4. Gate-source zener diode
1.1 PROTECTION FEATURES OF GATE-TO-SOURCE ZENER
DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol Parameter Max Value Unit
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
9 A
EAS
Single Pulse Avalanche Energy
(starting Tj=25°C, ID=IAR, VDD= 50V)
300 mJ
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max)
3.5 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVGSO
Gate-Source
Breakdown Voltage
Igs=±1mA
(Open Drain)
30 V
2 Electrical characteristics STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
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2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/Off
Table 6. Dynamic
Table 7. Switching on/off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-Source Breakdown
Voltage
ID = 250µA, VGS= 0 600 V
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
VDS = Max Rating,
1
50
µA
IGSS
Gate Body Leakage Current
(VDS = 0)
VGS = ±15V, VDS = 0 ±10 µA
VGS(th) Gate Threshold Voltage VDS= VGS, ID = 250 µA 3 3.75 4.5 V
RDS(on)
Static Drain-Source On
Resistance
VGS= 10 V, ID= 20 A 0.65 0.75 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs Note 4 Forward Transconductance VDS =15V, ID = 4.5A 7.8 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS =25V, f=1 MHz, VGS=0
1370
156
37
pF
pF
pF
Coss eq.
Note 5
Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V 90 pF
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=480V, ID = 8A
VGS =10V
(see Figure 19)
50
10
25
70 nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD=300 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
20
20
ns
ns
td(off)
tf
Turn-off Delay Time
Fall Time
VDD=300 V, ID=4A,
RG=4.7Ω, VGS=10V
(see Figure 20)
55
30
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD=480 V, ID=8A,
RG=4.7Ω, VGS=10V
(see Figure 20)
18
18
36
ns
ns
ns
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 2 Electrical characteristics
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Table 8. Source drain diode
(1) ISD ≤10A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80%
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDMNote 2
Source-drain Current
Source-drain Current (pulsed)
10
36
A
A
VSDNote 4 Forward on Voltage ISD=10A, VGS=0 1.6 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=8A, di/dt = 100A/µs,
VDD=40 V, Tj=150°C
570
4.3
15
ns
µC
A
2 Electrical characteristics STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
6/19
2.1 Typical characteristics
Figure 1. Safe Operating Area for
TO-220/D²/I²PAK
Figure 2. Thermal Impedanc for
TO-220/D²/I²PAK
Figure 3. Safe Operating Area for TO-220FP Figure 4. Thermal Impedance for TO-220FP
Figure 5. Safe Operating Area for TO-247 Figure 6. Thermal Impedance for TO-247
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 2 Electrical characteristics
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Figure 7. Output Characteristics Figure 8. Transfer Characteristics
Figure 9. Transconductance Figure 10. Static Drain-Source on Resistance
Figure 11. Gate Charge vs Gate -Source
Voltage
Figure 12. Capacitance Variations
2 Electrical characteristics STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
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Figure 13. Normalized Gate Threshold Voltage
vs Temperatute
Figure 14. Normalized on Resistance vs
Temperature
Figure 15. Source-drain Diode Forward
Characteristics
Figure 16. Normalized BVDSS vs Temperature
Figure 17. Maximum Avalanche Energy vs
Temperature
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 3 Test circuits
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3 Test circuits
Figure 18. Switching Times Test Circuit For
Resistive Load
Figure 19. Gate Charge Test Circuit
Figure 20. Test Circuit For Indictive Load
Switching and Diode Recovery
Times
4 Package mechanical data STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
10/19
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 4 Package mechanical data
11/19
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
4 Package mechanical data STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
12/19
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 4 Package mechanical data
13/19
TO-247 MECHANICAL DATA
1
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 4º
D2
PAK MECHANICAL DATA
3
4 Package mechanical data STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
14/19
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.23 1.32 0.048 0.052
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
E 10 10.40 0.393 0.410
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L2 1.27 1.40 0.050 0.055
TO-262 (I2PAK) MECHANICAL DATA
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 4 Package mechanical data
15/19
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e 5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S 5.50 0.216
TO-247 MECHANICAL DATA
5 Packing mechanical data STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
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5 Packing mechanical data
TAPE AND REEL SHIPMENT
D2
PAK FOOTPRINT
* on sales type
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA