Original N-Channel Mosfet FQU13N10LTU 13N10 100V 10A TO-251 New ON Semiconduc...AUTHELECTRONIC
This document provides specifications and performance characteristics for the FQD13N10L/FQU13N10L N-Channel QFET MOSFET from Fairchild Semiconductor. The MOSFET has a maximum drain-source voltage of 100V, can provide continuous drain current up to 10A, and has an on-resistance as low as 180mOhm. Graphs of electrical characteristics like capacitance, gate charge, and safe operating area are included, showing performance over temperature and operating conditions. Testing methods are also described for key parameters. The device is suitable for applications like power supplies, motor control, and switching regulators.
Original N-Channel MOSFET FQPF3N90 3N90 900V 3A TO-220 New FairchildAUTHELECTRONIC
This document provides specifications for the FQPF3N90 900V N-Channel MOSFET from Fairchild Semiconductor. It includes maximum ratings, electrical characteristics, thermal characteristics, and typical performance curves. The MOSFET uses Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses. It is well-suited for high efficiency switch mode power supplies.
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...AUTHELECTRONIC
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 New ST
https://authelectronic.com/original-n-channel-mosfet-fqd10n60c-std10nm60n-10nm60-10n60-10a-600v-to-252-new-st
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New FairchildAUTHELECTRONIC
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New Fairchild
https://authelectronic.com/original-n-channel-mosfet-fqpf12n60-12n60-12a-600v-new-fairchild
Original MOSFET N-CHANNEL FQP70N10 70N10 TO-220 70A 100V NewAUTHELECTRONIC
This document summarizes the specifications and characteristics of the FQP70N10 100V N-Channel MOSFET from Fairchild Semiconductor. It is an enhancement mode power MOSFET produced using Fairchild's proprietary DMOS technology to minimize on-state resistance and provide superior switching performance. Key features include a maximum drain current of 57A, on-resistance of 0.023 ohms, and avalanche tested capability. Electrical characteristics, switching characteristics, thermal characteristics and maximum ratings are provided.
Original N-Channel Mosfet FQU13N10LTU 13N10 100V 10A TO-251 New ON Semiconduc...AUTHELECTRONIC
This document provides specifications and performance characteristics for the FQD13N10L/FQU13N10L N-Channel QFET MOSFET from Fairchild Semiconductor. The MOSFET has a maximum drain-source voltage of 100V, can provide continuous drain current up to 10A, and has an on-resistance as low as 180mOhm. Graphs of electrical characteristics like capacitance, gate charge, and safe operating area are included, showing performance over temperature and operating conditions. Testing methods are also described for key parameters. The device is suitable for applications like power supplies, motor control, and switching regulators.
Original N-Channel MOSFET FQPF3N90 3N90 900V 3A TO-220 New FairchildAUTHELECTRONIC
This document provides specifications for the FQPF3N90 900V N-Channel MOSFET from Fairchild Semiconductor. It includes maximum ratings, electrical characteristics, thermal characteristics, and typical performance curves. The MOSFET uses Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses. It is well-suited for high efficiency switch mode power supplies.
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...AUTHELECTRONIC
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 New ST
https://authelectronic.com/original-n-channel-mosfet-fqd10n60c-std10nm60n-10nm60-10n60-10a-600v-to-252-new-st
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New FairchildAUTHELECTRONIC
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New Fairchild
https://authelectronic.com/original-n-channel-mosfet-fqpf12n60-12n60-12a-600v-new-fairchild
Original MOSFET N-CHANNEL FQP70N10 70N10 TO-220 70A 100V NewAUTHELECTRONIC
This document summarizes the specifications and characteristics of the FQP70N10 100V N-Channel MOSFET from Fairchild Semiconductor. It is an enhancement mode power MOSFET produced using Fairchild's proprietary DMOS technology to minimize on-state resistance and provide superior switching performance. Key features include a maximum drain current of 57A, on-resistance of 0.023 ohms, and avalanche tested capability. Electrical characteristics, switching characteristics, thermal characteristics and maximum ratings are provided.
This document provides specifications for an International Rectifier HEXFET Power MOSFET. Key specifications include:
- Maximum junction-to-case thermal resistance of 3.3 °C/W and junction-to-ambient of 50-110 °C/W depending on mounting.
- Continuous drain current rating of -11A at 25°C case temperature and -8A at 100°C case temperature.
- Pulsed drain current rating of -44A and power dissipation of 38W at 25°C case temperature.
Original Mosfet F3205S 3205 IRF3205S IRF3205 55V 110A D2Pak NewAUTHELECTRONIC
This document provides information on IRF3205 power MOSFETs from International Rectifier. It summarizes the key specifications and performance characteristics of the MOSFETs, including an on-resistance of 8.0 mOhms, a continuous drain current of 110A, and an operating junction temperature range of -55°C to +175°C. The document also provides the package details, electrical characteristics, and test conditions/diagrams to evaluate the switching performance and safe operating area of the devices.
Original MOSFET N-CHANNEL IRF530NPBF IRF530N IRF530 17A 100V TO-220 NewAUTHELECTRONIC
This document provides specifications for an IRF530NPbF HEXFET Power MOSFET. Key specifications include:
- Maximum drain-source voltage of 100V
- On-resistance of 90mOhm typical
- Continuous drain current of 17A
- Thermal resistances of 2.15°C/W junction to case and 62°C/W junction to ambient
- 175°C operating junction temperature
- TO-220 package outline drawing and specifications are also provided.
Original N-Channel Power MOSFET IRF1010EPBF IRF1010 1010 60V 84A TO-220 New I...AUTHELECTRONIC
Original N-Channel Power MOSFET IRF1010EPBF IRF1010 1010 60V 84A TO-220 New International Rectifier
https://authelectronic.com/original-n-channel-power-mosfet-irf1010epbf-irf1010-1010-60v-84a-to-220-new-international-rectifier
Original MOSFET N-CHANNEL FQPF13N50C FQPF13N50 13N50 TO-220 13A 500V NewAUTHELECTRONIC
This document provides specifications for the FQB13N50C/FQI13N50C 500V N-Channel MOSFETs from Fairchild Semiconductor. The MOSFETs use Fairchild's planar stripe DMOS technology and are well-suited for applications such as switched mode power supplies and lamp ballasts. Key specifications include a maximum drain-source voltage of 500V, continuous drain current of 13A, on-resistance as low as 0.39 ohms, and fast switching times. The document provides detailed electrical characteristics, thermal properties, package dimensions and test circuits.
Original N-Channel Mosfet IRFZ24N IRFZ24 TO-220 New Infineon TechnologiesAUTHELECTRONIC
This document provides information on the IRFZ24NPbF HEXFET power MOSFET from International Rectifier. It has a low on-resistance of 0.07 ohms and is suitable for applications up to 50 watts. The MOSFET uses a TO-220 package for its low thermal resistance and cost. It has features such as fast switching, avalanche rating, and a wide operating temperature range from -55 to 175 degrees Celsius.
Original N-Channel Mosfet FQP8N60C 8N60C 8N60 600V 7.5A TO-220F NewAUTHELECTRONIC
This document provides information on 600V N-Channel MOSFET products from Fairchild Semiconductor, including:
- The FQP8N60C and FQPF8N60C devices which use Fairchild's proprietary DMOS technology to minimize resistance and maximize switching performance.
- Key features and specifications like 7.5A continuous drain current, 1.2Ohm on-resistance, and 100% avalanche testing.
- Electrical characteristics, maximum ratings, typical performance curves, and test circuits to evaluate parameters such as gate charge, switching waveforms, and diode recovery.
- Application suitability for high efficiency power supplies, active power factor correction, and electronic ballasts due to
Original N Channel Mosfet IRF3710PBF IRF3710 3710 37A 100V NewAUTHELECTRONIC
Original N Channel Mosfet IRF3710PBF IRF3710 3710 37A 100V New
https://authelectronic.com/original-n-channel-mosfet-irf3710pbf-irf3710-3710-37a-100v-new
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...AUTHELECTRONIC
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK STF16N65M5 16N65M5 16N65 710V 12A TO-220FP New STMicroelectronics
https://authelectronic.com/original-n-channel-650-v-0-230-ohm-12-a-mdmesh-v-power-mosfet-in-dpak-dpak-stf16n65m5-16n65m5-16n65-710v-12a-to-220fp-new-stmicroelectronics
Original N-Channel Mosfet 2SK3484 3484 16A 100V TO-252 New Renesas ElectronicsAUTHELECTRONIC
This document provides specifications for the 2SK3484 N-channel MOS field effect transistor (MOSFET) including:
- Electrical characteristics such as on-state resistance, gate cut-off voltage, and input/output capacitances.
- Thermal characteristics such as thermal resistance and power dissipation derating curves.
- Switching characteristics such as turn-on/off delay times and rise/fall times.
- Package drawings and equivalent circuit diagram for the TO-251 and TO-252 packages.
This document provides specifications for an International Rectifier HEXFET Power MOSFET. Key specifications include:
- Maximum junction-to-case thermal resistance of 3.3 °C/W and junction-to-ambient of 50-110 °C/W depending on mounting.
- Continuous drain current rating of -11A at 25°C case temperature and -8A at 100°C case temperature.
- Pulsed drain current rating of -44A and power dissipation of 38W at 25°C case temperature.
Original Mosfet F3205S 3205 IRF3205S IRF3205 55V 110A D2Pak NewAUTHELECTRONIC
This document provides information on IRF3205 power MOSFETs from International Rectifier. It summarizes the key specifications and performance characteristics of the MOSFETs, including an on-resistance of 8.0 mOhms, a continuous drain current of 110A, and an operating junction temperature range of -55°C to +175°C. The document also provides the package details, electrical characteristics, and test conditions/diagrams to evaluate the switching performance and safe operating area of the devices.
Original MOSFET N-CHANNEL IRF530NPBF IRF530N IRF530 17A 100V TO-220 NewAUTHELECTRONIC
This document provides specifications for an IRF530NPbF HEXFET Power MOSFET. Key specifications include:
- Maximum drain-source voltage of 100V
- On-resistance of 90mOhm typical
- Continuous drain current of 17A
- Thermal resistances of 2.15°C/W junction to case and 62°C/W junction to ambient
- 175°C operating junction temperature
- TO-220 package outline drawing and specifications are also provided.
Original N-Channel Power MOSFET IRF1010EPBF IRF1010 1010 60V 84A TO-220 New I...AUTHELECTRONIC
Original N-Channel Power MOSFET IRF1010EPBF IRF1010 1010 60V 84A TO-220 New International Rectifier
https://authelectronic.com/original-n-channel-power-mosfet-irf1010epbf-irf1010-1010-60v-84a-to-220-new-international-rectifier
Original MOSFET N-CHANNEL FQPF13N50C FQPF13N50 13N50 TO-220 13A 500V NewAUTHELECTRONIC
This document provides specifications for the FQB13N50C/FQI13N50C 500V N-Channel MOSFETs from Fairchild Semiconductor. The MOSFETs use Fairchild's planar stripe DMOS technology and are well-suited for applications such as switched mode power supplies and lamp ballasts. Key specifications include a maximum drain-source voltage of 500V, continuous drain current of 13A, on-resistance as low as 0.39 ohms, and fast switching times. The document provides detailed electrical characteristics, thermal properties, package dimensions and test circuits.
Original N-Channel Mosfet IRFZ24N IRFZ24 TO-220 New Infineon TechnologiesAUTHELECTRONIC
This document provides information on the IRFZ24NPbF HEXFET power MOSFET from International Rectifier. It has a low on-resistance of 0.07 ohms and is suitable for applications up to 50 watts. The MOSFET uses a TO-220 package for its low thermal resistance and cost. It has features such as fast switching, avalanche rating, and a wide operating temperature range from -55 to 175 degrees Celsius.
Original N-Channel Mosfet FQP8N60C 8N60C 8N60 600V 7.5A TO-220F NewAUTHELECTRONIC
This document provides information on 600V N-Channel MOSFET products from Fairchild Semiconductor, including:
- The FQP8N60C and FQPF8N60C devices which use Fairchild's proprietary DMOS technology to minimize resistance and maximize switching performance.
- Key features and specifications like 7.5A continuous drain current, 1.2Ohm on-resistance, and 100% avalanche testing.
- Electrical characteristics, maximum ratings, typical performance curves, and test circuits to evaluate parameters such as gate charge, switching waveforms, and diode recovery.
- Application suitability for high efficiency power supplies, active power factor correction, and electronic ballasts due to
Original N Channel Mosfet IRF3710PBF IRF3710 3710 37A 100V NewAUTHELECTRONIC
Original N Channel Mosfet IRF3710PBF IRF3710 3710 37A 100V New
https://authelectronic.com/original-n-channel-mosfet-irf3710pbf-irf3710-3710-37a-100v-new
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK ST...AUTHELECTRONIC
Original N-channel 650 V 0.230 Ohm 12 A MDmesh V Power MOSFET in DPAK DPAK STF16N65M5 16N65M5 16N65 710V 12A TO-220FP New STMicroelectronics
https://authelectronic.com/original-n-channel-650-v-0-230-ohm-12-a-mdmesh-v-power-mosfet-in-dpak-dpak-stf16n65m5-16n65m5-16n65-710v-12a-to-220fp-new-stmicroelectronics
Original N-Channel Mosfet 2SK3484 3484 16A 100V TO-252 New Renesas ElectronicsAUTHELECTRONIC
This document provides specifications for the 2SK3484 N-channel MOS field effect transistor (MOSFET) including:
- Electrical characteristics such as on-state resistance, gate cut-off voltage, and input/output capacitances.
- Thermal characteristics such as thermal resistance and power dissipation derating curves.
- Switching characteristics such as turn-on/off delay times and rise/fall times.
- Package drawings and equivalent circuit diagram for the TO-251 and TO-252 packages.
Original Mosfet IRF4905PBF IRF4905 IRF4905 4905 55V 74A TO-220 New Internatio...AUTHELECTRONIC
Original Mosfet IRF4905PBF IRF4905 IRF4905 4905 55V 74A TO-220 New International Rectifier
https://authelectronic.com/original-mosfet-irf4905pbf-irf4905-irf4905-4905-55v-74a-to-220-new-international-rectifier
Original Mosfet N FDPF8N50NZ 8N50 8N50NZ 10V 4A TO-220 New FairchildAUTHELECTRONIC
Original Mosfet N FDPF8N50NZ 8N50 8N50NZ 10V 4A TO-220 New Fairchild
https://authelectronic.com/original-mosfet-n-fdpf8n50nz-8n50-8n50nz-10v-4a-to-220-new
Original N-Channel Mosfet 7N65L-TF1-T UTC7N65L 7.4A 650V TO-263 New UTCAUTHELECTRONIC
The 7N65 power MOSFET from Unisonic Technologies is a high-voltage transistor designed for switching applications. It has a maximum voltage rating of 650V, continuous current rating of 7.4A, and features low on-resistance, fast switching times, and high ruggedness. The document provides detailed specifications, characteristics, test methods and typical performance curves for the device.
Original N-CHANNEL MOSFET SPP20N60C3 20N60C3 20N60 20A 600V TO-220 New Infine...AUTHELECTRONIC
This document provides specifications for CoolMOSTM power transistors. Key specifications include:
- An RDS(on) of 0.19 Ohms, continuous drain current of 20.7A, and 650V maximum VDS at a junction temperature of 125C.
- World's lowest RDS(on) for a TO-220 packaged transistor. Features include high voltage, current and switching speed capabilities.
- Electrical characteristics are provided such as threshold voltage, on-resistance, transconductance, capacitances and switching times. Safe operating curves, thermal performance and application information are also included.
Original P Channel Mosfet IRF9Z34 IRF9Z34N IRF9Z34NPBF 9Z34 60V 18A TO 220 NewAUTHELECTRONIC
Original P Channel Mosfet IRF9Z34 IRF9Z34N IRF9Z34NPBF 9Z34 60V 18A TO 220 New
https://authelectronic.com/original-p-channel-mosfet-irf9z34-irf9z34n-irf9z34npbf-9z34-60v-18a-to-220-new
Original MOSFET N-CHANNEL STF5NK52ZD 5NK52ZD 5NK52 5A 520V NewAUTHELECTRONIC
Original MOSFET N-CHANNEL STF5NK52ZD 5NK52ZD 5NK52 5A 520V New
https://authelectronic.com/original-mosfet-n-channel-stf5nk52zd-5nk52zd-5nk52-5a-520v-new
Original Power MOSFET IRFP460PBF IRFP460 460 500V 20A TO-247 New Vishay Silic...AUTHELECTRONIC
Original Power MOSFET IRFP460PBF IRFP460 460 500V 20A TO-247 New Vishay Siliconix
https://authelectronic.com/original-power-mosfet-irfp460pbf-irfp460-460-500v-20a-to-247-new-vishay-siliconix
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New FairchildAUTHELECTRONIC
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New Fairchild
https://authelectronic.com/original-mosfet-n-8n80c-8n80-fqpf8n80c-fqpf8n80-8a-800v-to-220-new
Original N-channel 600 V 0.160 Ω 19 A PowerFLAT™ 8x8 HV ultra low gate charge...AUTHELECTRONIC
This document provides information on the STL26NM60N N-channel 600 V, 0.160 Ω, 19 A PowerFLATTM 8x8 HV ultra low gate charge MDmeshTM II Power MOSFET, including:
- Key features such as being 100% avalanche tested and having low input capacitance and gate charge
- Applications in switching applications
- Description of the proprietary vertical and horizontal process technologies used to achieve extremely low on-resistance
- Electrical ratings, characteristics and switching performance curves
- Package mechanical data for the PowerFLATTM 8x8 HV package
Original Power Supply IC LNK632DG LNK632 632 SOP-7 NewAUTHELECTRONIC
The LNK632DG is an energy efficient constant voltage/constant current switcher for adapters and chargers. It dramatically simplifies CV converter designs by eliminating secondary control circuitry and compensation components. Some key features include auto-restart protection, hysteretic thermal shutdown, tight output regulation that compensates for cable voltage drops and temperature variations, and high efficiency down to light loads. It is well-suited for charger applications like cell phones, PDAs, and MP3 players.
The document summarizes an low-profile relay model called G5RL that is suitable for various applications. It has several models including standard, low noise, high inrush, and high capacity. Key specifications include a height of 15.7mm, 8mm creepage distance, 10kV impulse withstand voltage. It provides information on ordering, ratings for coils and contacts, characteristics, dimensions, and engineering data.
Original Transition-Mode PFC Controller IC LD7591GS 7591 SOP-8 New LeadtrendAUTHELECTRONIC
This document provides information about the LD7591 transition-mode PFC controller, including:
- It is a voltage mode PFC controller that operates in transition mode with protections like OVP, OCP, and brown-in protection.
- It has features like low startup current, over voltage protection, open feedback protection, disable function, and integrated current sensing.
- Typical applications include adapters over 65W, open frame switching power supplies, LCD TV power supplies, and LED power supplies.
Original NPN Darlington Transistor MC1413DR2G 1413DR2G NCV1413BDG 1413BDG 141...AUTHELECTRONIC
The document describes a high voltage, high current Darlington transistor array that is well-suited for driving lamps, relays, or printer hammers. It has 7 NPN Darlington connected transistors with a high breakdown voltage and internal suppression diodes to ensure safety with inductive loads. It can drive incandescent lamps with peak inrush currents up to 500mA per transistor.
Original EEPROM IC BR93L76RFJ 93L76 RL76 SOP-8 New RohmAUTHELECTRONIC
This document provides important safety information regarding the intended use of ROHM products. It states that the products are designed for ordinary electronic equipment but should not be used in applications requiring extremely high reliability where malfunctions could directly endanger human life, such as medical devices. It also notes the products are not designed with antiradiation properties and certain exports may require controls under Japanese law. Contact information is provided for sales representatives.
Original Advanced IGBT/Mosfet Driver TD350E 350E SOP-14 New ST MicroelectronicsAUTHELECTRONIC
This document provides information on an advanced IGBT/MOSFET gate driver called the TD350E, including its key features, applications, description, and specifications. The TD350E is designed for applications such as inverters, motor control, and UPS systems. It provides 1.5A/2.3A gate drive, active Miller clamping, two-level turn-off protection, desaturation detection, and fault status output. Electrical characteristics and timing diagrams are included to specify the device's performance.
Original N-Channel Mosfet 2SK3562 3562 TO-220 New ToshibaAUTHELECTRONIC
This document provides specifications and performance characteristics for the Toshiba 2SK3562 N-channel MOSFET transistor. Key details include:
- It is an enhancement mode transistor intended for switching regulator applications with low on-resistance of 0.9 ohms and forward transfer admittance of 5.0S.
- Maximum ratings include a drain-source voltage of 600V, drain current of 6A continuous or 24A pulse, and drain power dissipation of 40W.
- Electrical characteristics at 25C include a gate threshold voltage of 2.0-4.0V, on-resistance of 0.9-1.25 ohms, and input/output capacit
Original N-Channel Mosfet FDPF33N25 33N25 TO-220 New FairChildAUTHELECTRONIC
This document provides information on the FDPF33N25250VN-Channel MOSFET from Fairchild Semiconductor. It is a 250V N-Channel MOSFET with low on-resistance of 0.094Ω and fast switching capabilities. It uses Fairchild's proprietary planar stripe DMOS technology to minimize resistance and maximize performance for applications such as high efficiency power supplies. Key specifications and performance characteristics are provided.
Original N-Channel Mosfet IRFB4020PBF 4020 TO-220-3 New International RectifierAUTHELECTRONIC
This document provides specifications for a digital audio MOSFET designed for use in class D audio amplifier applications. The MOSFET has been optimized to achieve low on-resistance, gate charge, and reverse recovery charge for improved efficiency, total harmonic distortion, and electromagnetic interference. Additional features include a 175°C operating temperature and repetitive avalanche capability making it robust and reliable for audio amplifiers. Tables and graphs provide electrical characteristics and performance metrics.
Original Logic IC SN74LVC14A SN54LVC14A 74LVC14A 54LVC14A SOP-14 New Texas In...AUTHELECTRONIC
The document provides information on the SN54LVC14A and SN74LVC14A hex Schmitt-trigger inverter integrated circuits. It describes their operating voltage ranges from 1.65V to 3.6V, maximum propagation delay of 6.4ns at 3.3V, ESD protection exceeding 2000V human-body and 200V machine models, and thermal characteristics with package impedance ranging from 47°C/W to 127°C/W. Ordering information and packaging details are provided for various operating temperature ranges from -55°C to 125°C. Electrical characteristics like input thresholds, output voltages, input and output currents, and input capacitance are specified over operating conditions.
Original High Voltage Isolation IC ACS710T KLA-12CB 710T SOP-16 NewAUTHELECTRONIC
The Allegro ACS710 current sensor provides economical and precise current sensing for industrial, commercial, and communications systems. It uses a precision linear Hall sensor integrated circuit with a copper conduction path near the surface to linearly track the magnetic field generated by the applied current. The sensor offers high immunity to electrical noise and low offset drift, and provides an analog output voltage and integrated overcurrent detection. It is available in a small surface-mount package.
Original Voltage Regulator & Controller IC TPS54231DR 54231DR 54231 SOP-8 Ne...AUTHELECTRONIC
The document provides specifications and design information for the TPS54231 step-down DC-DC converter from Texas Instruments. The TPS54231 is a 2-A, 28-V input converter with an integrated high-side MOSFET. It features adjustable output voltage down to 0.8V, pulse skipping for high efficiency at light loads, fixed 570kHz switching frequency, and various protection mechanisms. Application areas include consumer, industrial, and automotive equipment requiring distributed power supplies. The device is available in an 8-pin SOIC package.
Original Microcontroller IC R5F104BDA R5F 104BDA 104 NewAUTHELECTRONIC
This document provides an overview and specifications for the Renesas RL78/G14 microcontroller, including:
- Ultra-low power consumption down to 66 μA/MHz and 0.60 μA for RTC + LVD. Operates from 1.6V to 5.5V.
- 16 to 512 KB flash memory, 44 DMIPS performance at 32MHz.
- Various low power modes like HALT, STOP, and SNOOZE.
- On-chip peripherals include timers, ADC, DAC, comparators, serial interfaces, and I/O ports.
- Packaged in LQFP, LSSOP, QFN packages with pin counts from 30
Original Power Factor Correction IC UCC28061DR 28061 SOP-16 New Texas Instrum...AUTHELECTRONIC
The UCC28061 is a transition-mode PFC controller that features natural interleaving to improve efficiency and reduce component size. It provides complete system-level protections including input brownout, output overvoltage, and thermal shutdown. The device utilizes a natural interleaving technique where both channels operate as masters synchronized to the same frequency, delivering strong matching and fast response.
Original Gate Driver IC TD62083APG 62083APG 62083 DIP-18 New ToshibaAUTHELECTRONIC
This document provides specifications for the TD62083APG/AFG and TD62084APG/AFG integrated circuits from Toshiba. They are 8-channel Darlington sink drivers comprised of NPN Darlington pairs, with each channel capable of 500mA of output current. Key features include integral clamp diodes, compatible inputs for various logic types, DIP-18 and SOP-18 packaging options. Electrical characteristics, test circuits, precautions and package dimensions are provided.
Original Zener Diode 1N5366B 5366B 5366 5W 39V NewAUTHELECTRONIC
This document provides information on ON Semiconductor's 1N53 Series 5 Watt Zener diodes. It includes specifications for over 40 Zener diode models with voltages ranging from 3.3V to 200V. The diodes feature tight voltage limits, low leakage current, and are packaged in axial lead plastic packages for protection in various environments. Maximum ratings and electrical characteristics like Zener voltage, impedance, and surge current are specified for each model in tables.
Original Audio Amplifier IC TDA7850 7850 SIP-25 New ST MicroelectronicsAUTHELECTRONIC
The document describes the TDA7850, a MOSFET audio power amplifier chip designed for high power car audio systems. It has a maximum output power of 4 x 50W into 4 ohms or 4 x 80W into 2 ohms. The chip features protections against overheating, short circuits, and other faults. It uses a fully complementary MOSFET output stage for rail-to-rail voltage swing and minimized distortion. Electrical specifications and application information are provided.
Embedded machine learning-based road conditions and driving behavior monitoringIJECEIAES
Car accident rates have increased in recent years, resulting in losses in human lives, properties, and other financial costs. An embedded machine learning-based system is developed to address this critical issue. The system can monitor road conditions, detect driving patterns, and identify aggressive driving behaviors. The system is based on neural networks trained on a comprehensive dataset of driving events, driving styles, and road conditions. The system effectively detects potential risks and helps mitigate the frequency and impact of accidents. The primary goal is to ensure the safety of drivers and vehicles. Collecting data involved gathering information on three key road events: normal street and normal drive, speed bumps, circular yellow speed bumps, and three aggressive driving actions: sudden start, sudden stop, and sudden entry. The gathered data is processed and analyzed using a machine learning system designed for limited power and memory devices. The developed system resulted in 91.9% accuracy, 93.6% precision, and 92% recall. The achieved inference time on an Arduino Nano 33 BLE Sense with a 32-bit CPU running at 64 MHz is 34 ms and requires 2.6 kB peak RAM and 139.9 kB program flash memory, making it suitable for resource-constrained embedded systems.
Literature Review Basics and Understanding Reference Management.pptxDr Ramhari Poudyal
Three-day training on academic research focuses on analytical tools at United Technical College, supported by the University Grant Commission, Nepal. 24-26 May 2024
KuberTENes Birthday Bash Guadalajara - K8sGPT first impressionsVictor Morales
K8sGPT is a tool that analyzes and diagnoses Kubernetes clusters. This presentation was used to share the requirements and dependencies to deploy K8sGPT in a local environment.
Advanced control scheme of doubly fed induction generator for wind turbine us...IJECEIAES
This paper describes a speed control device for generating electrical energy on an electricity network based on the doubly fed induction generator (DFIG) used for wind power conversion systems. At first, a double-fed induction generator model was constructed. A control law is formulated to govern the flow of energy between the stator of a DFIG and the energy network using three types of controllers: proportional integral (PI), sliding mode controller (SMC) and second order sliding mode controller (SOSMC). Their different results in terms of power reference tracking, reaction to unexpected speed fluctuations, sensitivity to perturbations, and resilience against machine parameter alterations are compared. MATLAB/Simulink was used to conduct the simulations for the preceding study. Multiple simulations have shown very satisfying results, and the investigations demonstrate the efficacy and power-enhancing capabilities of the suggested control system.
DEEP LEARNING FOR SMART GRID INTRUSION DETECTION: A HYBRID CNN-LSTM-BASED MODELgerogepatton
As digital technology becomes more deeply embedded in power systems, protecting the communication
networks of Smart Grids (SG) has emerged as a critical concern. Distributed Network Protocol 3 (DNP3)
represents a multi-tiered application layer protocol extensively utilized in Supervisory Control and Data
Acquisition (SCADA)-based smart grids to facilitate real-time data gathering and control functionalities.
Robust Intrusion Detection Systems (IDS) are necessary for early threat detection and mitigation because
of the interconnection of these networks, which makes them vulnerable to a variety of cyberattacks. To
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Comparative analysis between traditional aquaponics and reconstructed aquapon...bijceesjournal
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Harnessing WebAssembly for Real-time Stateless Streaming PipelinesChristina Lin
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Original N-CHANNEL MOSFET P3NK90ZF STD3NK90Z STP3NK90Z STP3NK90ZFP 900V - 4.1ohm - 3A TO-220 New STMicroelectronics
1. DPAK
1
2
3
TAB
TO-220
1
2
3
TO-220FP
1
32
TAB
D(2, TAB)
G(1)
S(3) AM01475V1
Features
Order code VDS RDS(on) max. ID Package
STD3NK90ZT4
900 V 4.8 Ω 3 A
DPAK
STP3NK90Z TO-220
STP3NK90ZFP TO-220FP
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
Applications
• Switching applications
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.
Product status link
STD3NK90ZT4
STP3NK90Z
STP3NK90ZFP
N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH™ Power MOSFETs
in DPAK, TO-220 and TO-220FP packages
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Datasheet
DS2980 - Rev 3 - August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
2. 1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
DPAK, TO-220 TO-220FP
VDS Drain-source voltage 900 V
VGS Gate-source voltage ± 30 V
ID Drain current (continuous) at TC = 25 °C 3 3 (1) A
ID Drain current (continuous) at TC = 100 °C 1.89 1.89 (1) A
IDM
(2)
Drain current (pulsed) 12 12 (1) A
PTOT Total dissipation at TC = 25 °C 90 25 W
ESD
Gate-source human body model
(R = 1,5 kΩ, C = 100 pF)
4 kV
dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C)
2.5 kV
Tj Operating junction temperature range
-55 to 150 °C
Tstg Storage temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 3 A, di/dt ≤ 200 A/μs, VDS(peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 2. Thermal data
Symbol Parameter
Value
Unit
DPAK TO-220 TO-220FP
Rthj-case Thermal resistance junction-case 1.38 5
°C/WRthj-amb Thermal resistance junction-ambient 62.5
Rthj-pcb
(1)
Thermal resistance junction-pcb 50
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
IAR
(1)
Avalanche current, repetitive or not-repetitive 3 A
EAS
(2)
Single pulse avalanche energy 180 mJ
1. Pulse width limited by Tjmax.
2. Starting Tj = 25°C, ID = IAR, VDD = 50 V.
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Electrical ratings
DS2980 - Rev 3 page 2/24
3. 2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0 V 900 V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 900 V 1 µA
VGS = 0 V, VDS = 900 V, TC = 125 °C (1)
50 μA
IGSS
Gate body leakage
current
VDS = 0 V, VGS = ±20 V ±10 μA
VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 1.5 A 3.6 4.8 Ω
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 25 V, f = 1 MHz, VGS = 0 V -
590
- pF
Coss Output capacitance 63
Crss
Reverse transfer
capacitance
13
Coss eq.
(1) Equivalent output
capacitance
VDS = 0 to 720 V, VGS = 0 V - 35 - pF
Qg Total gate charge
VDD = 720 V, ID = 3 A, VGS = 0 to 10 V
(see Figure 16. Test circuit for gate charge
behavior)
-
22.7
- nCQgs Gate-source charge 4.2
Qgd Gate-drain charge 12
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 450 V, ID = 1.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15. Test circuit for resistive load
switching times and Figure 20. Switching
time waveform)
-
18
- ns
tr Rise time 7
td(off) Turn-off delay time 45
tf Fall time 18
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Electrical characteristics
DS2980 - Rev 3 page 3/24
4. Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current
-
3
A
ISDM
(1) Source-drain current
(pulsed)
12
VSD
(2)
Forward on voltage ISD = 3 A, VGS = 0 V - 1.6 V
trr Reverse recovery time ISD = 3 A, di/dt = 100 A/µs
VDD = 40 V, TJ = 150 °C
(see Figure 17. Test circuit for inductive
load switching and diode recovery times)
-
510 ns
Qrr Reverse recovery charge 2.2 μC
IRRM Reverse recovery current 8.7 A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)GSO
Gate-source breakdown
voltage
IGS = ±1 mA, ID = 0 A 30 - - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for
additional external componentry.
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Electrical characteristics
DS2980 - Rev 3 page 4/24
5. 2.1 Electrical characteristics curves
Figure 1. Safe operating area for DPAK, TO-220 Figure 2. Thermal impedance for DPAK, TO-220
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
δ=0.5
K
tp(s)10-4
10-3
10
-1
10
-2
δ=0.2
10-2
10
-3
10
0
10-1
Single pulse
0.05
0.02
0.01
0.1
GC20940_ZTH
Figure 5. Output characterisics Figure 6. Transfer characteristics
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Electrical characteristics curves
DS2980 - Rev 3 page 5/24
6. Figure 7. Static drain-source on resistance Figure 8. Gate charge vs gate-source voltage
Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Electrical characteristics curves
DS2980 - Rev 3 page 6/24
7. Figure 13. Maximum avalanche energy vs temperature Figure 14. Normalized V(BR)DSS vs temperature
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Electrical characteristics curves
DS2980 - Rev 3 page 7/24
8. 3 Test circuits
Figure 15. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200
μF VDD
3.3
μF+
pulse width
VGS
Figure 16. Test circuit for gate charge behavior
AM01469v1
47 kΩ
1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST
100 Ω
100 nF
D.U.T.
+pulse width
VGS
2200
μF
VG
VDD
Figure 17. Test circuit for inductive load switching and
diode recovery times
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
A A
B
B
RG
G
D
S
100 µH
µF
3.3 1000
µF VDD
D.U.T.
+
_
+
fast
diode
Figure 18. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD+
pulse width
Vi
3.3
µF
2200
µF
Figure 19. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
Figure 20. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Test circuits
DS2980 - Rev 3 page 8/24
9. 4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Package information
DS2980 - Rev 3 page 9/24
10. 4.1 DPAK (TO-252) type A2 package information
Figure 21. DPAK (TO-252) type A2 package outline
0068772_type-A2_rev25
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
DPAK (TO-252) type A2 package information
DS2980 - Rev 3 page 10/24
11. Table 9. DPAK (TO-252) type A2 mechanical data
Dim.
mm
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 4.95 5.10 5.25
E 6.40 6.60
E1 5.10 5.20 5.30
e 2.159 2.286 2.413
e1 4.445 4.572 4.699
H 9.35 10.10
L 1.00 1.50
L1 2.60 2.80 3.00
L2 0.65 0.80 0.95
L4 0.60 1.00
R 0.20
V2 0° 8°
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
DPAK (TO-252) type A2 package information
DS2980 - Rev 3 page 11/24
12. 4.2 DPAK (TO-252) type C2 package information
Figure 22. DPAK (TO-252) type C2 package outline
0068772_C2_25
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
DPAK (TO-252) type C2 package information
DS2980 - Rev 3 page 12/24
13. Table 10. DPAK (TO-252) type C2 mechanical data
Dim.
mm
Min. Typ. Max.
A 2.20 2.30 2.38
A1 0.90 1.01 1.10
A2 0.00 0.10
b 0.72 0.85
b4 5.13 5.33 5.46
c 0.47 0.60
c2 0.47 0.60
D 6.00 6.10 6.20
D1 5.10 5.60
E 6.50 6.60 6.70
E1 5.20 5.50
e 2.186 2.286 2.386
H 9.80 10.10 10.40
L 1.40 1.50 1.70
L1 2.90 REF
L2 0.90 1.25
L3 0.51 BSC
L4 0.60 0.80 1.00
L6 1.80 BSC
θ1 5° 7° 9°
θ2 5° 7° 9°
V2 0° 8°
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
DPAK (TO-252) type C2 package information
DS2980 - Rev 3 page 13/24
14. Figure 23. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_25
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
DPAK (TO-252) type C2 package information
DS2980 - Rev 3 page 14/24
15. 4.3 DPAK (TO-252) packing information
Figure 24. DPAK (TO-252) tape outline
P1A0 D1
P0
F
W
E
D
B0
K0
T
User direction offeed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction offeed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
DPAK (TO-252) packing information
DS2980 - Rev 3 page 15/24
16. Figure 25. DPAK (TO-252) reel outline
A
D
B
Full radius
Tape slot
in core for
tape start
2.5mm min.width
G measured
at hub
C
N
40mm min.
access hole
at slot location
T
AM06038v1
Table 11. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
DPAK (TO-252) packing information
DS2980 - Rev 3 page 16/24
17. 4.4 TO-220 type A package information
Figure 26. TO-220 type A package outline
0015988_typeA_Rev_21
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
TO-220 type A package information
DS2980 - Rev 3 page 17/24
18. Table 12. TO-220 type A package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
TO-220 type A package information
DS2980 - Rev 3 page 18/24
20. Table 13. TO-220FP package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
TO-220FP package information
DS2980 - Rev 3 page 20/24
21. 5 Ordering information
Table 14. Order codes
Order code Marking Package Packing
STD3NK90ZT4 D3NK90Z DPAK Tape and reel
STP3NK90Z P3NK90Z TO-220
Tube
STP3NK90ZFP P3NK90ZFP TO-220FP
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Ordering information
DS2980 - Rev 3 page 21/24
22. Revision history
Table 15. Document revision history
Date Version Changes
24-Oct-2006 1 First release.
29-Jan-2013 2
– The part number STD3NK90Z-1 has been moved to a separate datasheet
– Minor text changes
– Updated: Section 4: Package mechanical data
20-Aug-2018 3
Removed maturity status indication from cover page. The document status is
production data.
Updated title in cover page, Section 1 Electrical ratings, Section 2 Electrical
characteristics and Section 4 Package information.
Minor text changes.
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
DS2980 - Rev 3 page 22/24