Original Power MOSFET IRFP460PBF IRFP460 460 500V 20A TO-247 New Vishay Siliconix
https://authelectronic.com/original-power-mosfet-irfp460pbf-irfp460-460-500v-20a-to-247-new-vishay-siliconix
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IRAUTHELECTRONIC
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IR
https://authelectronic.com/original-p-channel-mosfet-irf5210pbf-irf5210-5210-100v-38a-to-220-new-ir
Original P-CHANNEL POWER MOSFETS IRFP9240PBF IRFP9240 9240 200V 12A TO-247 NewAUTHELECTRONIC
Original P-CHANNEL POWER MOSFETS IRFP9240PBF IRFP9240 9240 200V 12A TO-247 New
https://authelectronic.com/original-p-channel-power-mosfets-irfp9240pbf-irfp9240-9240-200v-12a-to-247-new
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New FairchildAUTHELECTRONIC
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New Fairchild
https://authelectronic.com/original-n-channel-mosfet-fqpf12n60-12n60-12a-600v-new-fairchild
Original N-Channel Power MOSFET IRF1010EPBF IRF1010 1010 60V 84A TO-220 New I...AUTHELECTRONIC
Original N-Channel Power MOSFET IRF1010EPBF IRF1010 1010 60V 84A TO-220 New International Rectifier
https://authelectronic.com/original-n-channel-power-mosfet-irf1010epbf-irf1010-1010-60v-84a-to-220-new-international-rectifier
Original N Channel Mosfet IRF3710PBF IRF3710 3710 37A 100V NewAUTHELECTRONIC
Original N Channel Mosfet IRF3710PBF IRF3710 3710 37A 100V New
https://authelectronic.com/original-n-channel-mosfet-irf3710pbf-irf3710-3710-37a-100v-new
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IRAUTHELECTRONIC
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IR
https://authelectronic.com/original-p-channel-mosfet-irf5210pbf-irf5210-5210-100v-38a-to-220-new-ir
Original P-CHANNEL POWER MOSFETS IRFP9240PBF IRFP9240 9240 200V 12A TO-247 NewAUTHELECTRONIC
Original P-CHANNEL POWER MOSFETS IRFP9240PBF IRFP9240 9240 200V 12A TO-247 New
https://authelectronic.com/original-p-channel-power-mosfets-irfp9240pbf-irfp9240-9240-200v-12a-to-247-new
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New FairchildAUTHELECTRONIC
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New Fairchild
https://authelectronic.com/original-n-channel-mosfet-fqpf12n60-12n60-12a-600v-new-fairchild
Original N-Channel Power MOSFET IRF1010EPBF IRF1010 1010 60V 84A TO-220 New I...AUTHELECTRONIC
Original N-Channel Power MOSFET IRF1010EPBF IRF1010 1010 60V 84A TO-220 New International Rectifier
https://authelectronic.com/original-n-channel-power-mosfet-irf1010epbf-irf1010-1010-60v-84a-to-220-new-international-rectifier
Original N Channel Mosfet IRF3710PBF IRF3710 3710 37A 100V NewAUTHELECTRONIC
Original N Channel Mosfet IRF3710PBF IRF3710 3710 37A 100V New
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Original Power MOSFET IRFP240 IRFP240PBF 240 200V 20A TO-247 New Vishay Silic...AUTHELECTRONIC
Original Power MOSFET IRFP240 IRFP240PBF 240 200V 20A TO-247 New Vishay Siliconix
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Original N-Channel Mosfet IRFUC20PBF 600V 2A TO-251 New VishayAUTHELECTRONIC
Original N-Channel Mosfet IRFUC20PBF 600V 2A TO-251 New Vishay
https://authelectronic.com/original-n-channel-mosfet-irfuc20pbf-600v-2a-to-251-new-vishay
Datasheet Layout for Semiconductor CompaniesAyça Little
Engineers have their own visual language which they use to communicate information about their products. Visual aids such as charts, graphs, tables, diagrams, mathematical symbols, detailed product blueprints and engineering drawings are all used to describe the product or application on offer.
It may seem like a cliché, but in many companies around the world, marketing and engineering departments often don't come into contact with each other and when they do they don’t always see eye to eye.
It is important for companies to come up with a system and workflow processes that allow for efficient communication and information sharing between these two departments so that products can be properly described and marketed. Effective use of technical documentation can lead to greater customer engagement and therefore more successful product sales and customer experiences.
Here is a “Semiconductor Datasheet Template “. TDSmaker offer you free Datasheet/ Specsheet/ Techsheet. Visit to ( https://www.tdsmaker.com ) to get start with free template.
Overview of the fundamental roles in Hydropower generation and the components involved in wider Electrical Engineering.
This paper presents the design and construction of hydroelectric dams from the hydrologist’s survey of the valley before construction, all aspects and involved disciplines, fluid dynamics, structural engineering, generation and mains frequency regulation to the very transmission of power through the network in the United Kingdom.
Author: Robbie Edward Sayers
Collaborators and co editors: Charlie Sims and Connor Healey.
(C) 2024 Robbie E. Sayers
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Hierarchical Digital Twin of a Naval Power SystemKerry Sado
A hierarchical digital twin of a Naval DC power system has been developed and experimentally verified. Similar to other state-of-the-art digital twins, this technology creates a digital replica of the physical system executed in real-time or faster, which can modify hardware controls. However, its advantage stems from distributing computational efforts by utilizing a hierarchical structure composed of lower-level digital twin blocks and a higher-level system digital twin. Each digital twin block is associated with a physical subsystem of the hardware and communicates with a singular system digital twin, which creates a system-level response. By extracting information from each level of the hierarchy, power system controls of the hardware were reconfigured autonomously. This hierarchical digital twin development offers several advantages over other digital twins, particularly in the field of naval power systems. The hierarchical structure allows for greater computational efficiency and scalability while the ability to autonomously reconfigure hardware controls offers increased flexibility and responsiveness. The hierarchical decomposition and models utilized were well aligned with the physical twin, as indicated by the maximum deviations between the developed digital twin hierarchy and the hardware.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
CFD Simulation of By-pass Flow in a HRSG module by R&R Consult.pptxR&R Consult
CFD analysis is incredibly effective at solving mysteries and improving the performance of complex systems!
Here's a great example: At a large natural gas-fired power plant, where they use waste heat to generate steam and energy, they were puzzled that their boiler wasn't producing as much steam as expected.
R&R and Tetra Engineering Group Inc. were asked to solve the issue with reduced steam production.
An inspection had shown that a significant amount of hot flue gas was bypassing the boiler tubes, where the heat was supposed to be transferred.
R&R Consult conducted a CFD analysis, which revealed that 6.3% of the flue gas was bypassing the boiler tubes without transferring heat. The analysis also showed that the flue gas was instead being directed along the sides of the boiler and between the modules that were supposed to capture the heat. This was the cause of the reduced performance.
Based on our results, Tetra Engineering installed covering plates to reduce the bypass flow. This improved the boiler's performance and increased electricity production.
It is always satisfying when we can help solve complex challenges like this. Do your systems also need a check-up or optimization? Give us a call!
Work done in cooperation with James Malloy and David Moelling from Tetra Engineering.
More examples of our work https://www.r-r-consult.dk/en/cases-en/
Explore the innovative world of trenchless pipe repair with our comprehensive guide, "The Benefits and Techniques of Trenchless Pipe Repair." This document delves into the modern methods of repairing underground pipes without the need for extensive excavation, highlighting the numerous advantages and the latest techniques used in the industry.
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Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
Original Power MOSFET IRFP460PBF IRFP460 460 500V 20A TO-247 New Vishay Siliconix
1. Document Number: 91237 www.vishay.com
S-81360-Rev. A, 28-Jul-08 1
Power MOSFET
IRFP460, SiHFP460
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to
meet the requirements of most safety specifications.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).
c. ISD ≤ 20 A, dI/dt ≤ 160 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V) 500
RDS(on) (Ω) VGS = 10 V 0.27
Qg (Max.) (nC) 210
Qgs (nC) 29
Qgd (nC) 110
Configuration Single
N-Channel MOSFET
G
D
S
TO-247
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-247
Lead (Pb)-free
IRFP460PbF
SiHFP460-E3
SnPb
IRFP460
SiHFP460
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500
V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at 10 V
TC = 25 °C
ID
20
ATC = 100 °C 13
Pulsed Drain Currenta IDM 80
Linear Derating Factor 2.2 W/°C
Single Pulse Avalanche Energyb EAS 960 mJ
Repetitive Avalanche Currenta IAR 20 A
Repetitive Avalanche Energya EAR 28 mJ
Maximum Power Dissipation TC = 25 °C PD 280 W
Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
2. www.vishay.com Document Number: 91237
2 S-81360-Rev. A, 28-Jul-08
IRFP460, SiHFP460
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 40
°C/WCase-to-Sink, Flat, Greased Surface RthCS 0.24 -
Maximum Junction-to-Case (Drain) RthJC - 0.45
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 500 V, VGS = 0 V - - 25
µA
VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 12 Ab - - 0.27 Ω
Forward Transconductance gfs VDS = 50 V, ID = 12 Ab 13 - - S
Dynamic
Input Capacitance Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
- 4200 -
pFOutput Capacitance Coss - 870 -
Reverse Transfer Capacitance Crss - 350 -
Total Gate Charge Qg
VGS = 10 V
ID = 20 A, VDS = 400 V
see fig. 6 and 13b
- - 210
nCGate-Source Charge Qgs - - 29
Gate-Drain Charge Qgd - - 110
Turn-On Delay Time td(on)
VDD = 250 V, ID = 20 A ,
RG = 4.3 Ω, RD = 13 Ω, see fig. 10b
- 18 -
ns
Rise Time tr - 59 -
Turn-Off Delay Time td(off) - 110 -
Fall Time tf - 58 -
Internal Drain Inductance LD
Between lead,
6 mm (0.25") from
package and center of
die contact
- 5.0 -
nH
Internal Source Inductance LS - 13 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
- - 20
A
Pulsed Diode Forward Currenta ISM - - 80
Body Diode Voltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 Vb - - 1.8 V
Body Diode Reverse Recovery Time trr
TJ = 25 °C, IF = 20A, dI/dt = 100 A/µsb
- 570 860 ns
Body Diode Reverse Recovery Charge Qrr - 5.7 8.6 µC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
3. Document Number: 91237 www.vishay.com
S-81360-Rev. A, 28-Jul-08 3
IRFP460, SiHFP460
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
VDS, Drain-to-Source Voltage (V)
ID,DrainCurrent(A)
20 µs Pulse Width
TC = 25 °C
4.5 V
101
100
100 101
Bottom
Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
91237_01
4.5 V
Bottom
Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
TC = 150 °C
101
100
100 101
ID,DrainCurrent(A)
91237_02 VDS, Drain-to-Source Voltage (V)
91237_03
25 °C
150 °C
20 µs Pulse Width
VDS = 50 V
101
100
ID,DrainCurrent(A)
VGS, Gate-to-Source Voltage (V)
5 6 7 8 9 104
91237_04
ID = 20 A
VGS = 10 V
3.5
0.0
0.5
1.0
1.5
2.0
2.5
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
RDS(on),Drain-to-SourceOnResistance
(Normalized)
3.0
4. www.vishay.com Document Number: 91237
4 S-81360-Rev. A, 28-Jul-08
IRFP460, SiHFP460
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
91237_05
10 000
8000
6000
4000
0
2000
100 101
Capacitance(pF)
VDS, Drain-to-Source Voltage (V)
Ciss
Crss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
91237_06
ID = 20 A
VDS = 250 V
For test circuit
see figure 13
VDS = 100 V
VDS = 400 V
QG, Total Gate Charge (nC)
VGS,Gate-to-SourceVoltage(V)
20
16
12
8
0
4
0 40 20016012080
91237_07
102
VSD, Source-to-Drain Voltage (V)
ISD,ReverseDrainCurrent(A)
0.6 1.21.00.8 1.61.4
25 °C
150 °C
VGS = 0 V
101
1.8 2.0
91237_08
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by RDS(on)
TC = 25 °C
TJ = 150 °C
Single Pulse
ID,DrainCurrent(A)
103
2
5
2
5
2
5
VDS, Drain-to-Source Voltage (V)
1 10 102 103
2 5 2 5 2 5
1
10
102
5. Document Number: 91237 www.vishay.com
S-81360-Rev. A, 28-Jul-08 5
IRFP460, SiHFP460
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11a - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
ID,DrainCurrent(A)
TC, Case Temperature (°C)
0
8
12
16
20
25 1501251007550
4
91237_09
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10 V
+
-
VDS
VDD
VDS
90 %
10 %
VGS
td(on) tr td(off) tf
91237_11
0 - 0.5
0.2
0.1
0.05
0.01
Single Pulse
(Thermal Response)
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
0.02
ThermalResponse(ZthJC)
1
0.1
10-3
t1, Rectangular Pulse Duration (S)
10-5 10-4 10-3 10-2 0.1 1 10
10-2
RG
IAS
0.01 Ωtp
D.U.T
L
VDS
+
-
VDD
A
10 V
Vary tp to obtain
required IAS
IAS
VDS
VDD
VDS
tp
6. www.vishay.com Document Number: 91237
6 S-81360-Rev. A, 28-Jul-08
IRFP460, SiHFP460
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
91237_12c
Bottom
Top
ID
8.9 A
13 A
20 A
VDD = 50 V
2400
0
400
800
1200
1600
2000
25 1501251007550
Starting TJ, Junction Temperature (°C)
EAS,SinglePulseEnergy(mJ)
QGS QGD
QG
VG
Charge
10 V
D.U.T.
3 mA
VGS
VDS
IG ID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
7. Document Number: 91237 www.vishay.com
S-81360-Rev. A, 28-Jul-08 7
IRFP460, SiHFP460
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91237.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple ≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 V*
VDD
ISD
Driver gate drive
D.U.T. ISD waveform
D.U.T. VDS waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+-
-
-
* VGS = 5 V for logic level devices
Peak Diode Recovery dV/dt Test Circuit
VDD
• dV/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
RG
8. Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.