Original N-Channel Mosfet FQP8N60C 8N60C 8N60 600V 7.5A TO-220F NewAUTHELECTRONIC
This document provides information on 600V N-Channel MOSFET products from Fairchild Semiconductor, including:
- The FQP8N60C and FQPF8N60C devices which use Fairchild's proprietary DMOS technology to minimize resistance and maximize switching performance.
- Key features and specifications like 7.5A continuous drain current, 1.2Ohm on-resistance, and 100% avalanche testing.
- Electrical characteristics, maximum ratings, typical performance curves, and test circuits to evaluate parameters such as gate charge, switching waveforms, and diode recovery.
- Application suitability for high efficiency power supplies, active power factor correction, and electronic ballasts due to
Original N-Channel Mosfet FQU13N10LTU 13N10 100V 10A TO-251 New ON Semiconduc...AUTHELECTRONIC
This document provides specifications and performance characteristics for the FQD13N10L/FQU13N10L N-Channel QFET MOSFET from Fairchild Semiconductor. The MOSFET has a maximum drain-source voltage of 100V, can provide continuous drain current up to 10A, and has an on-resistance as low as 180mOhm. Graphs of electrical characteristics like capacitance, gate charge, and safe operating area are included, showing performance over temperature and operating conditions. Testing methods are also described for key parameters. The device is suitable for applications like power supplies, motor control, and switching regulators.
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New FairchildAUTHELECTRONIC
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New Fairchild
https://authelectronic.com/original-n-channel-mosfet-fqpf12n60-12n60-12a-600v-new-fairchild
Original N-Channel Mosfet FQP8N60C 8N60C 8N60 600V 7.5A TO-220F NewAUTHELECTRONIC
This document provides information on 600V N-Channel MOSFET products from Fairchild Semiconductor, including:
- The FQP8N60C and FQPF8N60C devices which use Fairchild's proprietary DMOS technology to minimize resistance and maximize switching performance.
- Key features and specifications like 7.5A continuous drain current, 1.2Ohm on-resistance, and 100% avalanche testing.
- Electrical characteristics, maximum ratings, typical performance curves, and test circuits to evaluate parameters such as gate charge, switching waveforms, and diode recovery.
- Application suitability for high efficiency power supplies, active power factor correction, and electronic ballasts due to
Original N-Channel Mosfet FQU13N10LTU 13N10 100V 10A TO-251 New ON Semiconduc...AUTHELECTRONIC
This document provides specifications and performance characteristics for the FQD13N10L/FQU13N10L N-Channel QFET MOSFET from Fairchild Semiconductor. The MOSFET has a maximum drain-source voltage of 100V, can provide continuous drain current up to 10A, and has an on-resistance as low as 180mOhm. Graphs of electrical characteristics like capacitance, gate charge, and safe operating area are included, showing performance over temperature and operating conditions. Testing methods are also described for key parameters. The device is suitable for applications like power supplies, motor control, and switching regulators.
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New FairchildAUTHELECTRONIC
Original N Channel Mosfet FQPF12N60 12N60 12A 600V New Fairchild
https://authelectronic.com/original-n-channel-mosfet-fqpf12n60-12n60-12a-600v-new-fairchild
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New FairchildAUTHELECTRONIC
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New Fairchild
https://authelectronic.com/original-mosfet-n-8n80c-8n80-fqpf8n80c-fqpf8n80-8a-800v-to-220-new
Original MOSFET N-CHANNEL FQPF13N50C FQPF13N50 13N50 TO-220 13A 500V NewAUTHELECTRONIC
This document provides specifications for the FQB13N50C/FQI13N50C 500V N-Channel MOSFETs from Fairchild Semiconductor. The MOSFETs use Fairchild's planar stripe DMOS technology and are well-suited for applications such as switched mode power supplies and lamp ballasts. Key specifications include a maximum drain-source voltage of 500V, continuous drain current of 13A, on-resistance as low as 0.39 ohms, and fast switching times. The document provides detailed electrical characteristics, thermal properties, package dimensions and test circuits.
Original MOSFET N-CHANNEL FQP70N10 70N10 TO-220 70A 100V NewAUTHELECTRONIC
This document summarizes the specifications and characteristics of the FQP70N10 100V N-Channel MOSFET from Fairchild Semiconductor. It is an enhancement mode power MOSFET produced using Fairchild's proprietary DMOS technology to minimize on-state resistance and provide superior switching performance. Key features include a maximum drain current of 57A, on-resistance of 0.023 ohms, and avalanche tested capability. Electrical characteristics, switching characteristics, thermal characteristics and maximum ratings are provided.
Original N-Channel Mosfet 7N65L-TF1-T UTC7N65L 7.4A 650V TO-263 New UTCAUTHELECTRONIC
The 7N65 power MOSFET from Unisonic Technologies is a high-voltage transistor designed for switching applications. It has a maximum voltage rating of 650V, continuous current rating of 7.4A, and features low on-resistance, fast switching times, and high ruggedness. The document provides detailed specifications, characteristics, test methods and typical performance curves for the device.
Original N-Channel MOSFET FQPF3N90 3N90 900V 3A TO-220 New FairchildAUTHELECTRONIC
This document provides specifications for the FQPF3N90 900V N-Channel MOSFET from Fairchild Semiconductor. It includes maximum ratings, electrical characteristics, thermal characteristics, and typical performance curves. The MOSFET uses Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses. It is well-suited for high efficiency switch mode power supplies.
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...AUTHELECTRONIC
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 New ST
https://authelectronic.com/original-n-channel-mosfet-fqd10n60c-std10nm60n-10nm60-10n60-10a-600v-to-252-new-st
Original Mosfet N FDPF8N50NZ 8N50 8N50NZ 10V 4A TO-220 New FairchildAUTHELECTRONIC
Original Mosfet N FDPF8N50NZ 8N50 8N50NZ 10V 4A TO-220 New Fairchild
https://authelectronic.com/original-mosfet-n-fdpf8n50nz-8n50-8n50nz-10v-4a-to-220-new
This document provides product specifications for the PSMN005-55B and PSMN005-55P N-channel logic level TrenchMOS transistors. It includes key features, general descriptions, limiting values, electrical characteristics, thermal characteristics, and mechanical data. The transistors use Philips' Trench technology to achieve very low on-state resistance in the SOT78 and SOT404 packages for applications such as DC-DC converters and switched mode power supplies.
Original N Channel Mosfet IRF630N IRF630 TO-220 9.3A 200V New IRAUTHELECTRONIC
Original N Channel Mosfet IRF630N IRF630 TO-220 9.3A 200V New IR
https://authelectronic.com/original-n-channel-mosfet-irf630n-irf630-to-220-9-3a-200v-new-ir
Original MOSFET N-CHANNEL IRF530NPBF IRF530N IRF530 17A 100V TO-220 NewAUTHELECTRONIC
This document provides specifications for an IRF530NPbF HEXFET Power MOSFET. Key specifications include:
- Maximum drain-source voltage of 100V
- On-resistance of 90mOhm typical
- Continuous drain current of 17A
- Thermal resistances of 2.15°C/W junction to case and 62°C/W junction to ambient
- 175°C operating junction temperature
- TO-220 package outline drawing and specifications are also provided.
Original N Channel Mosfet IRF3710PBF IRF3710 3710 37A 100V NewAUTHELECTRONIC
Original N Channel Mosfet IRF3710PBF IRF3710 3710 37A 100V New
https://authelectronic.com/original-n-channel-mosfet-irf3710pbf-irf3710-3710-37a-100v-new
Original P-Channel Mosfet MDD3752RH 3752 43A 40V TO-252 New MagnaChip Semicon...AUTHELECTRONIC
This document provides specifications for the MDD3752 P-channel trench MOSFET from MagnaChip Semiconductor. Some key details include:
- Absolute maximum ratings of -40V for drain-source voltage, ±20V for gate-source voltage, and continuous drain current of -43A at 25°C and -27A at 100°C.
- Electrical characteristics including a drain-source breakdown voltage of -40V, gate threshold voltage between -1V to -3V, and on-resistance below 17mΩ at -10V gate voltage.
- The device features a trench gate structure for low on-resistance and fast switching. It is packaged in a
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New FairchildAUTHELECTRONIC
Original Mosfet N 8N80C 8N80 FQPF8N80C FQPF8N80 8A 800V TO-220 New Fairchild
https://authelectronic.com/original-mosfet-n-8n80c-8n80-fqpf8n80c-fqpf8n80-8a-800v-to-220-new
Original MOSFET N-CHANNEL FQPF13N50C FQPF13N50 13N50 TO-220 13A 500V NewAUTHELECTRONIC
This document provides specifications for the FQB13N50C/FQI13N50C 500V N-Channel MOSFETs from Fairchild Semiconductor. The MOSFETs use Fairchild's planar stripe DMOS technology and are well-suited for applications such as switched mode power supplies and lamp ballasts. Key specifications include a maximum drain-source voltage of 500V, continuous drain current of 13A, on-resistance as low as 0.39 ohms, and fast switching times. The document provides detailed electrical characteristics, thermal properties, package dimensions and test circuits.
Original MOSFET N-CHANNEL FQP70N10 70N10 TO-220 70A 100V NewAUTHELECTRONIC
This document summarizes the specifications and characteristics of the FQP70N10 100V N-Channel MOSFET from Fairchild Semiconductor. It is an enhancement mode power MOSFET produced using Fairchild's proprietary DMOS technology to minimize on-state resistance and provide superior switching performance. Key features include a maximum drain current of 57A, on-resistance of 0.023 ohms, and avalanche tested capability. Electrical characteristics, switching characteristics, thermal characteristics and maximum ratings are provided.
Original N-Channel Mosfet 7N65L-TF1-T UTC7N65L 7.4A 650V TO-263 New UTCAUTHELECTRONIC
The 7N65 power MOSFET from Unisonic Technologies is a high-voltage transistor designed for switching applications. It has a maximum voltage rating of 650V, continuous current rating of 7.4A, and features low on-resistance, fast switching times, and high ruggedness. The document provides detailed specifications, characteristics, test methods and typical performance curves for the device.
Original N-Channel MOSFET FQPF3N90 3N90 900V 3A TO-220 New FairchildAUTHELECTRONIC
This document provides specifications for the FQPF3N90 900V N-Channel MOSFET from Fairchild Semiconductor. It includes maximum ratings, electrical characteristics, thermal characteristics, and typical performance curves. The MOSFET uses Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance while withstanding high energy pulses. It is well-suited for high efficiency switch mode power supplies.
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 N...AUTHELECTRONIC
Original N Channel Mosfet FQD10N60C STD10NM60N 10NM60 10N60 10A 600V TO-252 New ST
https://authelectronic.com/original-n-channel-mosfet-fqd10n60c-std10nm60n-10nm60-10n60-10a-600v-to-252-new-st
Original Mosfet N FDPF8N50NZ 8N50 8N50NZ 10V 4A TO-220 New FairchildAUTHELECTRONIC
Original Mosfet N FDPF8N50NZ 8N50 8N50NZ 10V 4A TO-220 New Fairchild
https://authelectronic.com/original-mosfet-n-fdpf8n50nz-8n50-8n50nz-10v-4a-to-220-new
This document provides product specifications for the PSMN005-55B and PSMN005-55P N-channel logic level TrenchMOS transistors. It includes key features, general descriptions, limiting values, electrical characteristics, thermal characteristics, and mechanical data. The transistors use Philips' Trench technology to achieve very low on-state resistance in the SOT78 and SOT404 packages for applications such as DC-DC converters and switched mode power supplies.
Original N Channel Mosfet IRF630N IRF630 TO-220 9.3A 200V New IRAUTHELECTRONIC
Original N Channel Mosfet IRF630N IRF630 TO-220 9.3A 200V New IR
https://authelectronic.com/original-n-channel-mosfet-irf630n-irf630-to-220-9-3a-200v-new-ir
Original MOSFET N-CHANNEL IRF530NPBF IRF530N IRF530 17A 100V TO-220 NewAUTHELECTRONIC
This document provides specifications for an IRF530NPbF HEXFET Power MOSFET. Key specifications include:
- Maximum drain-source voltage of 100V
- On-resistance of 90mOhm typical
- Continuous drain current of 17A
- Thermal resistances of 2.15°C/W junction to case and 62°C/W junction to ambient
- 175°C operating junction temperature
- TO-220 package outline drawing and specifications are also provided.
Original N Channel Mosfet IRF3710PBF IRF3710 3710 37A 100V NewAUTHELECTRONIC
Original N Channel Mosfet IRF3710PBF IRF3710 3710 37A 100V New
https://authelectronic.com/original-n-channel-mosfet-irf3710pbf-irf3710-3710-37a-100v-new
Original P-Channel Mosfet MDD3752RH 3752 43A 40V TO-252 New MagnaChip Semicon...AUTHELECTRONIC
This document provides specifications for the MDD3752 P-channel trench MOSFET from MagnaChip Semiconductor. Some key details include:
- Absolute maximum ratings of -40V for drain-source voltage, ±20V for gate-source voltage, and continuous drain current of -43A at 25°C and -27A at 100°C.
- Electrical characteristics including a drain-source breakdown voltage of -40V, gate threshold voltage between -1V to -3V, and on-resistance below 17mΩ at -10V gate voltage.
- The device features a trench gate structure for low on-resistance and fast switching. It is packaged in a
This document provides information on the 15N60 power MOSFET from Unisonic Technologies Co., Ltd. including:
- It is an N-channel power MOSFET using advanced DMOS technology to provide low on-state resistance and superior switching performance.
- Key features include a continuous drain current of 15A, on-state resistance of 0.44Ω, and avalanche energy rating of 637mJ.
- It is suited for applications such as active power factor correction and high efficiency switched mode power supplies.
Original N-Channel Mosfet IRFI4019H-117P 4019 8A 150V TO-220 NewAUTHELECTRONIC
This document provides information on a digital audio MOSFET in a TO-220 Full-Pak 5 pin package designed for class D audio amplifier applications. The MOSFET integrates two power switches in a half-bridge configuration to reduce part count. Key parameters like low RDS(on), Qg, Qsw, and Qrr are optimized to improve efficiency, THD, and reduce EMI. Figures and tables of electrical characteristics like breakdown voltage, on-resistance, gate charge, and switching performance are provided. The document also includes test circuits and considerations for evaluating the MOSFET.
Original N-Channel Mosfet IRFI4019H-117P 4019 8A 150V TO-220 NewAUTHELECTRONIC
Original N-Channel Mosfet IRFI4019H-117P 4019 8A 150V TO-220 New
https://authelectronic.com/original-n-channel-mosfet-irfi4019h-117p-4019-8a-150v-to-220-new
Original N-Channel Mosfet UTC7N65L-TF1-T 7N65 7.4A 650V TO-220F New TechcodAUTHELECTRONIC
This document provides information on the 7N65L power MOSFET from Unisonic Technologies Co., Ltd. It has a maximum drain-source voltage of 650V, on-resistance as low as 1.2 ohms, fast switching times under 150 ns, and low gate charge of 29 nC. The MOSFET is suitable for high-speed switching applications in devices like switching power supplies and adapters due to its strong avalanche capability and improved switching performance.
Original N-Channel Mosfet PFF7N80 800V 7A TO-220F New WING ON GROUPAUTHELECTRONIC
This document describes the PFP7N80/PFF7N80 800V N-channel MOSFETs from Wing On STS. Key specifications include a continuous drain current of 7A, on-resistance of 1.55Ω typical, and gate charge of 35nC typical. The document provides detailed electrical characteristics, thermal characteristics, application information, and test methodology for the devices.
Original P-Channel Mosfet NTD2955T4G 2955G 2955 60V 12A TO-252 New On Semico...AUTHELECTRONIC
Original P-Channel Mosfet NTD2955T4G 2955G 2955 60V 12A TO-252 New On Semiconductor
https://authelectronic.com/original-p-channel-mosfet-ntd2955t4g-2955g-2955-60v-12a-to-252-new-on-semiconductor
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IRAUTHELECTRONIC
Original P-CHANNEL MOSFET IRF5210PBF IRF5210 5210 100V 38A TO-220 New IR
https://authelectronic.com/original-p-channel-mosfet-irf5210pbf-irf5210-5210-100v-38a-to-220-new-ir
This document summarizes the specifications and characteristics of a dual N-channel enhancement mode field effect transistor (CEG8205A). Key specifications include a maximum drain-source voltage of 20V, continuous drain current of 6A, and on-resistance as low as 21mΩ at 4.5V gate-source voltage. The device has a TSSOP-8 surface mount package and is rated for operating temperatures from -55 to 150 degrees C.
Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New ...AUTHELECTRONIC
Original Mosfet IRFB18N50KPBF IRFB18N50K FB18N50K 18N50K 500V 17A TO-220 New International Rectifier
https://authelectronic.com/original-mosfet-irfb18n50kpbf-irfb18n50k-fb18n50k-18n50k-500v-17a-to-220-new-international-rectifier
Similar to Original N-Channel Mosfet FQP2N60C 2N60C 2N60 600V 2A TO-220 New Fairchild (14)
Original Power Supply IC LNK632DG LNK632 632 SOP-7 NewAUTHELECTRONIC
The LNK632DG is an energy efficient constant voltage/constant current switcher for adapters and chargers. It dramatically simplifies CV converter designs by eliminating secondary control circuitry and compensation components. Some key features include auto-restart protection, hysteretic thermal shutdown, tight output regulation that compensates for cable voltage drops and temperature variations, and high efficiency down to light loads. It is well-suited for charger applications like cell phones, PDAs, and MP3 players.
The document summarizes an low-profile relay model called G5RL that is suitable for various applications. It has several models including standard, low noise, high inrush, and high capacity. Key specifications include a height of 15.7mm, 8mm creepage distance, 10kV impulse withstand voltage. It provides information on ordering, ratings for coils and contacts, characteristics, dimensions, and engineering data.
Original Transition-Mode PFC Controller IC LD7591GS 7591 SOP-8 New LeadtrendAUTHELECTRONIC
This document provides information about the LD7591 transition-mode PFC controller, including:
- It is a voltage mode PFC controller that operates in transition mode with protections like OVP, OCP, and brown-in protection.
- It has features like low startup current, over voltage protection, open feedback protection, disable function, and integrated current sensing.
- Typical applications include adapters over 65W, open frame switching power supplies, LCD TV power supplies, and LED power supplies.
Original NPN Darlington Transistor MC1413DR2G 1413DR2G NCV1413BDG 1413BDG 141...AUTHELECTRONIC
The document describes a high voltage, high current Darlington transistor array that is well-suited for driving lamps, relays, or printer hammers. It has 7 NPN Darlington connected transistors with a high breakdown voltage and internal suppression diodes to ensure safety with inductive loads. It can drive incandescent lamps with peak inrush currents up to 500mA per transistor.
Original EEPROM IC BR93L76RFJ 93L76 RL76 SOP-8 New RohmAUTHELECTRONIC
This document provides important safety information regarding the intended use of ROHM products. It states that the products are designed for ordinary electronic equipment but should not be used in applications requiring extremely high reliability where malfunctions could directly endanger human life, such as medical devices. It also notes the products are not designed with antiradiation properties and certain exports may require controls under Japanese law. Contact information is provided for sales representatives.
Original Advanced IGBT/Mosfet Driver TD350E 350E SOP-14 New ST MicroelectronicsAUTHELECTRONIC
This document provides information on an advanced IGBT/MOSFET gate driver called the TD350E, including its key features, applications, description, and specifications. The TD350E is designed for applications such as inverters, motor control, and UPS systems. It provides 1.5A/2.3A gate drive, active Miller clamping, two-level turn-off protection, desaturation detection, and fault status output. Electrical characteristics and timing diagrams are included to specify the device's performance.
Original N-Channel Mosfet 2SK3562 3562 TO-220 New ToshibaAUTHELECTRONIC
This document provides specifications and performance characteristics for the Toshiba 2SK3562 N-channel MOSFET transistor. Key details include:
- It is an enhancement mode transistor intended for switching regulator applications with low on-resistance of 0.9 ohms and forward transfer admittance of 5.0S.
- Maximum ratings include a drain-source voltage of 600V, drain current of 6A continuous or 24A pulse, and drain power dissipation of 40W.
- Electrical characteristics at 25C include a gate threshold voltage of 2.0-4.0V, on-resistance of 0.9-1.25 ohms, and input/output capacit
Original N-Channel Mosfet FDPF33N25 33N25 TO-220 New FairChildAUTHELECTRONIC
This document provides information on the FDPF33N25250VN-Channel MOSFET from Fairchild Semiconductor. It is a 250V N-Channel MOSFET with low on-resistance of 0.094Ω and fast switching capabilities. It uses Fairchild's proprietary planar stripe DMOS technology to minimize resistance and maximize performance for applications such as high efficiency power supplies. Key specifications and performance characteristics are provided.
Original N-Channel Mosfet IRFB4020PBF 4020 TO-220-3 New International RectifierAUTHELECTRONIC
This document provides specifications for a digital audio MOSFET designed for use in class D audio amplifier applications. The MOSFET has been optimized to achieve low on-resistance, gate charge, and reverse recovery charge for improved efficiency, total harmonic distortion, and electromagnetic interference. Additional features include a 175°C operating temperature and repetitive avalanche capability making it robust and reliable for audio amplifiers. Tables and graphs provide electrical characteristics and performance metrics.
Original Logic IC SN74LVC14A SN54LVC14A 74LVC14A 54LVC14A SOP-14 New Texas In...AUTHELECTRONIC
The document provides information on the SN54LVC14A and SN74LVC14A hex Schmitt-trigger inverter integrated circuits. It describes their operating voltage ranges from 1.65V to 3.6V, maximum propagation delay of 6.4ns at 3.3V, ESD protection exceeding 2000V human-body and 200V machine models, and thermal characteristics with package impedance ranging from 47°C/W to 127°C/W. Ordering information and packaging details are provided for various operating temperature ranges from -55°C to 125°C. Electrical characteristics like input thresholds, output voltages, input and output currents, and input capacitance are specified over operating conditions.
Original High Voltage Isolation IC ACS710T KLA-12CB 710T SOP-16 NewAUTHELECTRONIC
The Allegro ACS710 current sensor provides economical and precise current sensing for industrial, commercial, and communications systems. It uses a precision linear Hall sensor integrated circuit with a copper conduction path near the surface to linearly track the magnetic field generated by the applied current. The sensor offers high immunity to electrical noise and low offset drift, and provides an analog output voltage and integrated overcurrent detection. It is available in a small surface-mount package.
Original Voltage Regulator & Controller IC TPS54231DR 54231DR 54231 SOP-8 Ne...AUTHELECTRONIC
The document provides specifications and design information for the TPS54231 step-down DC-DC converter from Texas Instruments. The TPS54231 is a 2-A, 28-V input converter with an integrated high-side MOSFET. It features adjustable output voltage down to 0.8V, pulse skipping for high efficiency at light loads, fixed 570kHz switching frequency, and various protection mechanisms. Application areas include consumer, industrial, and automotive equipment requiring distributed power supplies. The device is available in an 8-pin SOIC package.
Original Microcontroller IC R5F104BDA R5F 104BDA 104 NewAUTHELECTRONIC
This document provides an overview and specifications for the Renesas RL78/G14 microcontroller, including:
- Ultra-low power consumption down to 66 μA/MHz and 0.60 μA for RTC + LVD. Operates from 1.6V to 5.5V.
- 16 to 512 KB flash memory, 44 DMIPS performance at 32MHz.
- Various low power modes like HALT, STOP, and SNOOZE.
- On-chip peripherals include timers, ADC, DAC, comparators, serial interfaces, and I/O ports.
- Packaged in LQFP, LSSOP, QFN packages with pin counts from 30
Original Power Factor Correction IC UCC28061DR 28061 SOP-16 New Texas Instrum...AUTHELECTRONIC
The UCC28061 is a transition-mode PFC controller that features natural interleaving to improve efficiency and reduce component size. It provides complete system-level protections including input brownout, output overvoltage, and thermal shutdown. The device utilizes a natural interleaving technique where both channels operate as masters synchronized to the same frequency, delivering strong matching and fast response.
Original Gate Driver IC TD62083APG 62083APG 62083 DIP-18 New ToshibaAUTHELECTRONIC
This document provides specifications for the TD62083APG/AFG and TD62084APG/AFG integrated circuits from Toshiba. They are 8-channel Darlington sink drivers comprised of NPN Darlington pairs, with each channel capable of 500mA of output current. Key features include integral clamp diodes, compatible inputs for various logic types, DIP-18 and SOP-18 packaging options. Electrical characteristics, test circuits, precautions and package dimensions are provided.
Original Zener Diode 1N5366B 5366B 5366 5W 39V NewAUTHELECTRONIC
This document provides information on ON Semiconductor's 1N53 Series 5 Watt Zener diodes. It includes specifications for over 40 Zener diode models with voltages ranging from 3.3V to 200V. The diodes feature tight voltage limits, low leakage current, and are packaged in axial lead plastic packages for protection in various environments. Maximum ratings and electrical characteristics like Zener voltage, impedance, and surge current are specified for each model in tables.
Original Audio Amplifier IC TDA7850 7850 SIP-25 New ST MicroelectronicsAUTHELECTRONIC
The document describes the TDA7850, a MOSFET audio power amplifier chip designed for high power car audio systems. It has a maximum output power of 4 x 50W into 4 ohms or 4 x 80W into 2 ohms. The chip features protections against overheating, short circuits, and other faults. It uses a fully complementary MOSFET output stage for rail-to-rail voltage swing and minimized distortion. Electrical specifications and application information are provided.
DEEP LEARNING FOR SMART GRID INTRUSION DETECTION: A HYBRID CNN-LSTM-BASED MODELgerogepatton
As digital technology becomes more deeply embedded in power systems, protecting the communication
networks of Smart Grids (SG) has emerged as a critical concern. Distributed Network Protocol 3 (DNP3)
represents a multi-tiered application layer protocol extensively utilized in Supervisory Control and Data
Acquisition (SCADA)-based smart grids to facilitate real-time data gathering and control functionalities.
Robust Intrusion Detection Systems (IDS) are necessary for early threat detection and mitigation because
of the interconnection of these networks, which makes them vulnerable to a variety of cyberattacks. To
solve this issue, this paper develops a hybrid Deep Learning (DL) model specifically designed for intrusion
detection in smart grids. The proposed approach is a combination of the Convolutional Neural Network
(CNN) and the Long-Short-Term Memory algorithms (LSTM). We employed a recent intrusion detection
dataset (DNP3), which focuses on unauthorized commands and Denial of Service (DoS) cyberattacks, to
train and test our model. The results of our experiments show that our CNN-LSTM method is much better
at finding smart grid intrusions than other deep learning algorithms used for classification. In addition,
our proposed approach improves accuracy, precision, recall, and F1 score, achieving a high detection
accuracy rate of 99.50%.
Batteries -Introduction – Types of Batteries – discharging and charging of battery - characteristics of battery –battery rating- various tests on battery- – Primary battery: silver button cell- Secondary battery :Ni-Cd battery-modern battery: lithium ion battery-maintenance of batteries-choices of batteries for electric vehicle applications.
Fuel Cells: Introduction- importance and classification of fuel cells - description, principle, components, applications of fuel cells: H2-O2 fuel cell, alkaline fuel cell, molten carbonate fuel cell and direct methanol fuel cells.
ACEP Magazine edition 4th launched on 05.06.2024Rahul
This document provides information about the third edition of the magazine "Sthapatya" published by the Association of Civil Engineers (Practicing) Aurangabad. It includes messages from current and past presidents of ACEP, memories and photos from past ACEP events, information on life time achievement awards given by ACEP, and a technical article on concrete maintenance, repairs and strengthening. The document highlights activities of ACEP and provides a technical educational article for members.
Advanced control scheme of doubly fed induction generator for wind turbine us...IJECEIAES
This paper describes a speed control device for generating electrical energy on an electricity network based on the doubly fed induction generator (DFIG) used for wind power conversion systems. At first, a double-fed induction generator model was constructed. A control law is formulated to govern the flow of energy between the stator of a DFIG and the energy network using three types of controllers: proportional integral (PI), sliding mode controller (SMC) and second order sliding mode controller (SOSMC). Their different results in terms of power reference tracking, reaction to unexpected speed fluctuations, sensitivity to perturbations, and resilience against machine parameter alterations are compared. MATLAB/Simulink was used to conduct the simulations for the preceding study. Multiple simulations have shown very satisfying results, and the investigations demonstrate the efficacy and power-enhancing capabilities of the suggested control system.
KuberTENes Birthday Bash Guadalajara - K8sGPT first impressionsVictor Morales
K8sGPT is a tool that analyzes and diagnoses Kubernetes clusters. This presentation was used to share the requirements and dependencies to deploy K8sGPT in a local environment.
CHINA’S GEO-ECONOMIC OUTREACH IN CENTRAL ASIAN COUNTRIES AND FUTURE PROSPECTjpsjournal1
The rivalry between prominent international actors for dominance over Central Asia's hydrocarbon
reserves and the ancient silk trade route, along with China's diplomatic endeavours in the area, has been
referred to as the "New Great Game." This research centres on the power struggle, considering
geopolitical, geostrategic, and geoeconomic variables. Topics including trade, political hegemony, oil
politics, and conventional and nontraditional security are all explored and explained by the researcher.
Using Mackinder's Heartland, Spykman Rimland, and Hegemonic Stability theories, examines China's role
in Central Asia. This study adheres to the empirical epistemological method and has taken care of
objectivity. This study analyze primary and secondary research documents critically to elaborate role of
china’s geo economic outreach in central Asian countries and its future prospect. China is thriving in trade,
pipeline politics, and winning states, according to this study, thanks to important instruments like the
Shanghai Cooperation Organisation and the Belt and Road Economic Initiative. According to this study,
China is seeing significant success in commerce, pipeline politics, and gaining influence on other
governments. This success may be attributed to the effective utilisation of key tools such as the Shanghai
Cooperation Organisation and the Belt and Road Economic Initiative.
Optimizing Gradle Builds - Gradle DPE Tour Berlin 2024Sinan KOZAK
Sinan from the Delivery Hero mobile infrastructure engineering team shares a deep dive into performance acceleration with Gradle build cache optimizations. Sinan shares their journey into solving complex build-cache problems that affect Gradle builds. By understanding the challenges and solutions found in our journey, we aim to demonstrate the possibilities for faster builds. The case study reveals how overlapping outputs and cache misconfigurations led to significant increases in build times, especially as the project scaled up with numerous modules using Paparazzi tests. The journey from diagnosing to defeating cache issues offers invaluable lessons on maintaining cache integrity without sacrificing functionality.
Electric vehicle and photovoltaic advanced roles in enhancing the financial p...IJECEIAES
Climate change's impact on the planet forced the United Nations and governments to promote green energies and electric transportation. The deployments of photovoltaic (PV) and electric vehicle (EV) systems gained stronger momentum due to their numerous advantages over fossil fuel types. The advantages go beyond sustainability to reach financial support and stability. The work in this paper introduces the hybrid system between PV and EV to support industrial and commercial plants. This paper covers the theoretical framework of the proposed hybrid system including the required equation to complete the cost analysis when PV and EV are present. In addition, the proposed design diagram which sets the priorities and requirements of the system is presented. The proposed approach allows setup to advance their power stability, especially during power outages. The presented information supports researchers and plant owners to complete the necessary analysis while promoting the deployment of clean energy. The result of a case study that represents a dairy milk farmer supports the theoretical works and highlights its advanced benefits to existing plants. The short return on investment of the proposed approach supports the paper's novelty approach for the sustainable electrical system. In addition, the proposed system allows for an isolated power setup without the need for a transmission line which enhances the safety of the electrical network