The MUSES8920 is a high quality audio J-FET input dual operational amplifier. It has low noise of 8nV/√Hz, high slew rate of 25V/μs, and low distortion of 0.00004% at a voltage gain of 1. These characteristics make it suitable for applications such as audio preamplifiers, active filters, and line amplifiers. It can also be used in transimpedance amplifiers due to its low input bias current. The MUSES8920 is available in an 8-pin DIP or SOP package. It operates from a ±3.5V to ±16V power supply and provides high performance audio amplification.

1. MUSES8920
High Quality Audio J-FET Input
Dual Operational Amplifier
■ GENERAL DESCRIPTION ■ PACKAGE OUTLINE
The MUSES8920 is a high quality Audio J-FET input dual operational
amplifier. This is a mass production model of MUSES Series. By
inheriting MUSES Technology we pursued in the "MUSES series", the
MUSES8920 is compatible in high-quality sound and productivity. The
MUSES8920 has improved the chip layout and the material, and is MUSES8920D MUSES8920E
(DIP8) (SOP8)
developing by thoroughly repeating the listening sound.
The characteristics Low noise (8nV/√Hz), high-SR (25V/µs) and low
distortion (0.00004%, Av=1) suitable for audio preamplifiers, active
filters, and line amplifiers. In addition, taking advantage of the low input
bias current that J-FET has, it is suitable for transimpedance amplifier
(I/V converter).
■ FEATURES ■ PIN CONFIGLATION
●Operating Voltage ±3.5V to ±16V
●Low Noise 8nV/√Hz typ.
●THD 0.00004% typ. (Av=1) Top View
PIN FUNCTION
●Slew Rate 25V/µs typ. 1. A OUTPUT
1 8
●Channel Separation 150dB typ. 2. A -INPUT
3. A +INPUT
●High Output Current 100mA typ.(short-circuit current) 2 A 7 4. V-
●Phase Margin 70 deg typ. 5. B +INPUT
3 B 6 6. B -INPUT
●Input Offset Voltage 0.8mV typ. 5mV max. 7. B OUTPUT
●Input Bias Current 5pA typ. 250pA max 4 5 8.V+
●Voltage Gain 135dB typ.
●J-FET technology
●Package Outline DIP8, SOP8 JEDEC 150mil
■ APPLICATIONS
●Current to Voltage (I/V) Converters
●Hi-end Audio
●Active Filters
●Integrators
I/V
Digital DA
Analog
Input Converter
Output
I/V LPF Buff
DAC Output I/V converter + LPF circuit
MUSES and this logo are trademarks of New Japan Radio Co., Ltd.
Ver.2012-04-02 -1-

2. MUSES8920
■ ABSOLUTE MAXIMUM RATING (Ta=25ºC unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Supply Voltage VDD ±18 V
Differential Input Voltage Range VID ±30(Note1) V
Common Mode Input Voltage Range VICM ±15(Note1) V
DIP8:870
Power Dissipation PD mW
SOP8:900(Note2)
Operating Temperature Range Topr -40~+85 ºC
Storage Temperature Range Tstg -50~+150 ºC
(Note1) For supply Voltages less than ±15 V, the maximum input voltage is equal to the Supply Voltage.
(Note2) Mounted on the EIA/JEDEC standard board (114.3×76.2×1.6mm, two layer, FR-4).
(Note3) NJM8920 is ESD (electrostatic discharge) sensitive device.
Therefore, proper ESD precautions are recommended to avoid permanent damage or loss of functionality.
■ RECOMMENDED OPERATING VOLTAGE (Ta=25ºC)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
+ -
Supply Voltage V /V ±3.5 - ±16 V
■ ELECTRICAL CHARACTERISTICS
+ -
● DC CHARACTERISTICS (V /V =±15V, Ta=25ºC, Vcm=0V unless otherwise specified)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Supply Current Icc RL=∞, No Signal - 8 12 mA
Input Offset Voltage VIO RS=50Ω (Note4) - 0.8 5 mV
Input Bias Current IB (Note4) - 5 250 pA
Input Offset Current IIO (Note4) - 2 220 pA
Voltage Gain1 AV1 RL=10kΩ, Vo=±13V 106 135 - dB
Voltage Gain2 AV2 RL=2kΩ, Vo=±12.8V 105 133 - dB
Voltage Gain3 AV3 RL=600Ω, Vo=12.5V 105 130 - dB
Common Mode Rejection Ratio CMR VICM=±12.5V (Note5) 80 110 - dB
+ -
Supply Voltage Rejection Ratio SVR V /V =±3.5 to ±16V 80 110 - dB
Maximum Output Voltage1 VOM1 RL=10kΩ ±13 ±14 - V
Maximum Output Voltage2 VOM2 RL=2kΩ ±12.8 ±13.8 - V
Maximum Output Voltage3 VOM2 RL=600Ω ±12.5 ±13.5 - V
Common Mode Input Voltage Range VICM CMR≥80dB ±12.5 ±14 - V
(Note4) Written by absolute ratio.
(Note5) CMR is calculated by specified change in offset voltage. (VICM=0V to +12.5V, VICM=0V to -12.5V)
+ -
● AC CHARACTERISTICS (V /V =±15V, Ta=25ºC, Vcm=0V unless otherwise specified)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gain Bandwidth Product GB f=10kHz - 11 - MHz
Unity Gain Frequency fT AV=+100, RS=100Ω, RL=2kΩ, CL=10pF - 10 - MHz
Phase Margin ΦM AV=+100, RS=100Ω, RL=2kΩ, CL=10pF - 70 - Deg
Equivalent Input Noise Voltage1 VNI1 f=1kHz - 8 - nV/√Hz
Equivalent Input Noise Voltage2 VNI2 RIAA, RS=2.2kΩ, 30kHz, LPF - 1.1 3.5 µVrms
Total Harmonic Distortion THD f=1kHz , AV=+10, Vo=5Vrms, RL=2kΩ - 0.0004 - %
Channel Separation CS f=1kHz , AV=-100, RL=2kΩ - 150 - dB
Slew Rate SR AV=1, VIN=2Vp-p, RL=2kΩ, CL=10pF - 25 - V/us
-2- Ver.2012-04-02

3. MUSES8920
■ Application Notes
●Package Power, Power Dissipation and Output Power
IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called
Power Dissipation PD. The dependence of the MUSES8920 PD on ambient temperature is shown in Fig 1. The plots are
depended on following two points. The first is PD on ambient temperature 25ºC, which is the maximum power dissipation.
The second is 0W, which means that the IC cannot radiate any more. Conforming the maximum junction temperature
Tjmax to the storage temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the PD
lower than 25ºC to it on 25ºC. The PD is shown following formula as a function of the ambient temperature between those
points.
Tjmax - Ta
Dissipation Power PD = [W] (Ta=25ºC to Ta=150ºC)
θja
Where, ja is heat thermal resistance which depends on parameters such as package material, frame material and so on.
Therefore, PD is different in each package.
While, the actual measurement of dissipation power on MUSES8920 is obtained using following equation.
(Actual Dissipation Power) = (Supply Voltage VDD) X (Supply Current IDD) – (Output Power Po)
The MUSES8920 should be operated in lower than PD of the actual dissipation power.
To sustain the steady state operation, take account of the Dissipation Power and thermal design.
PD [mW]
SOP8
900
870
DIP8
Ta [deg]
-40 25 85 150
(Topr max.) (Tstg max.)
Fig.1 Power Dissipations vs. Ambient Temperature on the MUSE8920
Ver.2012-04-02 -3-

4. MUSES8920
TYPICAL CARACTERISTICS
THD+N vs. Output Voltage (Frequency) THD+N vs. Output Voltage (Frequency)
V+/V-=±15V, AV=+10, RL=2k, Ta=25ºC V+/V-=±3.5V, AV=+10, RL=2k, Ta=25ºC
10 10
1 1
f=20Hz
THD+N [%]
THD+N [%]
0.1 0.1 f=1kHz
f=20kHz
0.01 0.01
f=1kHz
f=20kHz
f=20kHz
0.001 0.001
0.0001 0.0001
0.01 0.1 1 10 100 0.01 0.1 1 10 100
Output Voltage [Vrms] Output Voltage [Vrms]
Voltage Noise vs. Frequency Channel Separation vs. Frequency
+ - + -
∞
V /V =±15V, AV=+100, RS=100Ω, RL=∞, Ta=25ºC V /V =±15V, AV=-100, RL=2kΩ, Ta=25ºC
100 -120
-125
Equivalent Input Noise Voltage
80
Channel Separation [dB]
-130
60 -135
[nV/√ Hz]
-140
40 -145
-150
20
-155
0 -160
1 10 100 1k 10k 100k 10 100 1k 10k 100k
Frequency [Hz] Frequency [Hz]
Gain vs. Frequency (Temperature) Phase Margin vs. Temperature (Supply Voltage)
+ - + -
V /V =±15V, AV=+100, RL=2kΩ, CL=10pF V /V =±15V, AV=+100, RS=100Ω, RL=2kΩ, CL=10pF, VIN=-30dBm
60 90
Gain
Ta=+85ºC
40
Ta=+25ºC
Phase Margin [deg]
V+/V-=±15V
Voltage Gain [dB]
Phase Ta=-40ºC
20 0 80
Phase [deg]
0 -45
-20 Ta=+85ºC -90 70
Ta=+25ºC Ta=-40ºC
V+/V-=±3.5V
-40 -135
-60 -180 60
10k 100k 1M 10M 100M -50 -25 0 25 50 75 100 125 150
Frequency [Hz] Ambient Temperature [ºC]
-4- Ver.2012-04-02

5. MUSES8920
■ TYPICAL CARACTERISTICS
Pulse Response Slew Rate vs. Temperature
+ - + -
V /V =±15V, Gv=0dB, CL=10pF, RL=2kΩ, Ta=25ºC V /V =±15V, VIN=2VP-P, f=100kHz, Gv=0dB, CL=10pF, RL=2kΩ
80
Input
70
60
Fall
Slew Rate [V/µs]
Voltage [1V/div]
50
40
30
20
Rise
10
Output
0
Time [1µs/div]
-50 -25 0 25 50 75 100 125 150
Ambient Temperature [ºC]
Supply Current vs. Supply Voltage (Temperature) Supply Current vs. Temperature (Supply Voltage)
AV=0dB AV=0dB
12 12
+ -
V /V =±15V
Ta=+25ºC
10 10
Supply Current [mA]
Supply Current [mA]
8 8
Ta=+85ºC Ta=-40ºC V+/V-=±3.5V
6 6
4 4
2 2
0 0
±0 ±4 ±8 ±12 ±16 -50 -25 0 25 50 75 100 125 150
+ -
Supply Voltage V /V [V] Ambient Temperature [ºC]
Input Offset Voltage vs. Supply Voltage (Temperature) Input Offset Voltage vs. Temperature (Supply Voltage)
VICM=0V, VIN=0V VICM=0V, VIN=0V
2.0 2.0
1.5 1.5
Input Offset Voltage [mV]
Input Offset Voltage [mV]
1.0 1.0 V+/V-=±15V
Ta=-40ºC
0.5 0.5
0.0 0.0
Ta＝+25ºC
＝
Ta=+85ºC
+ -
V /V =±3.5V
-0.5 -0.5
-1.0 -1.0
0 ±4 ±8 ±12 ±16 -50 -25 0 25 50 75 100 125 150
+ -
Supply Voltage V /V [V] Ambient Temperature [ºC]
Ver.2012-04-02 -5-

6. MUSES8920
■ TYPICAL CARACTERISTICS
Input Offset Voltage Input Offset Voltage
vs. Common Mode Input Voltage vs. Common Mode Input Voltage
(Temperature) (Temperature)
V+/V-=±15V V+/V-=±3.5V
2.0 2.0
1.5 1.5
Input Offset Voltage [mV]
Input Offset Voltage [mV]
1.0 Ta=-40ºC 1.0
Ta=-40ºC
0.5 0.5
0.0 0.0
Ta＝+25ºC
＝ Ta=+85ºC
Ta＝+25ºC
＝
Ta=+85ºC
-0.5 -0.5
-1.0 -1.0
-15 -10 -5 0 5 10 15 -4 -3 -2 -1 0 1 2 3 4
Common Mode Input Voltage [V] Common Mode Input Voltage [V]
Input Bias Current vs. Common Mode Input Voltage
Input Bias Current vs. Temperature (Supply Voltage) (Temperature)
+ - + -
VICM=0V, V /V =±15V V /V =±15V, Ta=25ºC
1000n 10
100n 9
Input Bias Current [A]
Input Bias Current [pA]
8
10n
7
1n
6
100p
5
10p 4
1p 3
-50 -25 0 25 50 75 100 125 150 -15 -10 -5 0 5 10 15
Ambient Temperature [ºC] Common Mode Input Voltage [V]
CMR vs. Temperature SVR vs. Temperature
+ - + -
V /V =±15V →
VICM=0V, V /V =±3.5V→±16V
140 140
Supply Voltage Rejection Ratio [dB]
Common Mode Rejection Ratio [dB]
130 130
→
VICM=0V→+12.5V
120 120
110 110
100 100
→
VICM=-12.5V→0V
90 90
80 80
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Ambient Temperature [ºC] Ambient Temperature [ºC]
-6- Ver.2012-04-02

7. MUSES8920
■ TYPICAL CARACTERISTICS
Output Voltage vs. Output Current (Temperature) Output Voltage vs. Output Current (Temperature)
+ - + -
V /V =±15V V /V =±3.5V
15 4
Isource
Isource 3 Ta=+125ºC
10 Ta=-40ºC
Ta=+85ºC
2
Output Voltage [V]
Output Voltage [V]
Ta=+25ºC
5 Ta=+25ºC
1
Ta=-40ºC
0 0
Ta=+85ºC -1
-5
Ta=+25ºC Ta=-40ºC
-2
-10
Isink -3 Isink
-15 -4
1 10 100 1k 1 10 100 1k
Output Current [mA] Output Current [mA]
Maximum Output Voltage vs. Load Resistance Maximum Output Voltage vs. Load Resistance
(Temperature) (Temperature)
+ - + -
V /V =±15V, Gv=open, RL to 0V V /V =±3.5V, Gv=open, RL to 0V
15 4
3
10
Maximum Output Voltage [V]
Maximum Output Voltage [V]
Ta=-40ºC
Ta=+25ºC 2
5
Ta=+85ºC 1
0 0
Ta=+85ºC
Ta=+25ºC
-1 Ta=-40ºC
-5
-2
-10
-3
-15 -4
10 100 1k 10k 100k 10 100 1k 10k 100k
Load Resistance [Ω] Load Resistance [Ω]
Ver.2012-04-02 -7-

8. MUSES8920
■ APPLICATION CIRCUIT
Gain Stage
Analog I/V
Att
Input Digital DA
AD Digital Analog
Input Converter
Converter Output Output
Buff I/V LPF Buff
(Fig.1: ADC Input) (Fig.2:DAC Output)
L-ch.
L-ch.
Analog
Analog
Intput C2
Output HPF
C1 R2 R3
DAC
R-ch.
R1
R-ch. C3
Analog
Analog
Intput
Output
R5
R4
Vcc 1/2Vcc
(Fig.4:DAC LPF Circuit )
1/2Vcc
(Fig.3: Half Vcc Buffer on Single Supply Application)
<CAUTION>
The specifications on this data book are only given for information,
without any guarantee as regards either mistakes or omissions. The
application circuits in this data book are described only to show
representative usages of the product and not intended for the
guarantee or permission of any right including the industrial rights.
-8- Ver.2012-04-02