ICP H2/NF3 remote-plasma simulation
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Usually remote-plasma equipment is used as plasma CVD equipment and dry etching equipment. The feature reduces the incidence ion bombardment and the influence of photons to the substrate, and makes easy control of distribution of the activated species on the substrate compared with parallel plate type plasma equipment in thin-film generation and thin-film processing.
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For continuous education, a collaborative OpenLearning website on ALD is under construction [7]. Many of the images used in this tutorial—and in Refs. 6 and 7—are available in Wikimedia Commons [8] for easy and free reuse. To contribute to collective learning of the early history of ALD, the open-science effort Virtual Project on the History of ALD [4] still welcomes new volunteer participants.
[1] E. Ahvenniemi et al., J. Vac. Sci. Technol. A 35 (2017) 010801 (2017). [2] R.L. Puurunen, ECS Transactions 86 (6) (2018) 3-17; OA: DOI:10.1149/osf.io/exyv3 [3] G.N. Parsons et al., J. Vac. Sci. Technol. A 38 (2020) 037001. [4] http://vph-ald.com [5] J.R. van Ommen, R.L. Puurunen, ALD 2020, https://youtu.be/jqm_wf49WwM [6] J.R. van Ommen, A. Goulas, R.L. Puurunen, Kirk-Othmer Encyclopedia on Chemical Technology, submitted. [7] http://openlearning.aalto.fi, ALD [8] https://commons.wikimedia.org/wiki/Category:Atomic_layer_deposition
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What is q factor ?
The Q-factor is a measure of signal quality that indicates the minimum signal-to-noise ratio required to achieve a given bit error rate for a signal. It is defined as the ratio between the distance from the decision point to the edges of the eye pattern and the root mean square noise on the edges. A higher Q-factor means less noise and better signal quality. For telecommunications systems, a Q-factor of 6 typically corresponds to a bit error rate of 10-9. The Q-factor is proportional to but slightly lower than the optical signal-to-noise ratio, with the difference typically being 1-2 decibels.
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Surface coverage in atomic layer deposition - slides related to invited talk ...
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Slides of invited "ALD 101" tutorial by Puurunen at ALD 2021
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Timer egu 2013 egu zao
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Slow dancing pdn on memory-controller-packages may-10th_2012_hf_last
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WD11903Y8H
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Sandia 2014 Wind Turbine Blade Workshop- Newman
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みなさんこんにちはこれ何文字まで入るの？40文字以下不可とか本当に意味わからないけどこれ限界文字数書いてないからマジでやばい文字数いけるんじゃないの？えこ...
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みなさんこんにちはこれ何文字まで入るの？40文字以下不可とか本当に意味わからないけどこれ限界文字数書いてないからマジでやばい文字数いけるんじゃないの？えこ...
みなさんこんにちはこれ何文字まで入るの？40文字以下不可とか本当に意味わからないけどこれ限界文字数書いてないからマジでやばい文字数いけるんじゃないの？えこ...
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ICP H2/NF3 remote-plasma simulation
- 1. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 1 Plasma Enhanced materials processing and rarefied GAS dynamics Unified Simulation tools P E G A S U S
- 2. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 2 ICP H2/NF3 Remote-plasma simulation Modules： PHM NMEM
- 3. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 3 Purpose Usually remote-plasma equipment is used as plasma CVD equipment and dry etching equipment. The feature reduces the incidence ion bombardment and the influence of photons to the substrate, and makes easy control of distribution of the activated species on the substrate compared with parallel plate type plasma equipment in thin-film generation and thin-film processing.
- 4. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 4 Outline of equipment Model of simulation H2 NF3 Substrate r z RF ε= 3.8r R.F. Gas-ring H2 NF3
- 5. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 5 400 Operating conditions ICP coil Power： 200 [W] Freq. : 13.56 [MHz] Total gas flow rates： 300 [sccm] H2 : NF3 = 2:1 (=200 : 100) Pressure on the outlet : 10 [Pa] Geometry Temperature of walls and substrate : 313 [K] Gas temperature : 313 [K] Unit [mm]100 60 100 60 3 5 180 60 400 140
- 6. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 6 Species ( electron, ions, and neutrals ) Charged spec. ：13 Neutral spec. ：13
- 7. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 7 Gas-phase reactions ( hydrogen )
- 8. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 8 Gas-phase reactions ( nitrogen,fluorine)
- 9. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 9 Surface reactions H 0.97 H2 0.5 H2 1.0 N 0.97 N2 0.5 N2 1.0 F 0.97 F2 0.5 F2 1.0 NxFy 1.0 I+ (正イオン) 0.0 I 1.0 (H,H2,N,N2,F,F2,NF,NF2,NF3) H3 + 0.0 H 1.0 H2 1.0 r r : Reflection coeff. 1-r : Sticking coeff. a、b : Emitted coeff. 1-r (1-r)*a (1-r)*b Incident Spec. Reflection coeff. Emitted spec./coeff.
- 10. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 10 Computational results
- 11. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 11 Time history of electron temp. at each monitoring cell
- 12. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 12 Physical quantities by R.F. coil Electron density and temperature Inductive E-field [V/cm] Adsorbed power [W/cm3] Electron temperature [eV] Electron density [/m3]
- 13. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 13 H3 + F - NF2 + Ion density [/m3] H+ Ion density [/m3]
- 14. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 14 N H Neutral density [/m3] NF2 F Neutral density [/m3]
- 15. Copyright 2002-2013 PEGASUS Software Inc., All rights reserved. 15 Mixture gas Pressure [Pa] Velocity [m/s] NF3 H2 Neutral density [/m3]