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Ruchika Mittal, Sarita Bajaj, Neha / International Journal of Engineering Research and
Applications (IJERA) ISSN: 2248-9622 www.ijera.com
Vol. 3, Issue 3, May-Jun 2013, pp.1365-1367
1365 | P a g e
Leakage Power Reduction in CMOS
Ruchika Mittal1
, Sarita Bajaj2
, Neha3
1, 2
(Elect. & Comm. Deptt. DVIET, Karnal, Haryana)
3
(Elect. & Comm. Deptt. RPIIT, Bastara, Haryana)
Abstract
The advantage of scaling devices is to
achieve high performance, low power, large
integration and low cost continues to be attractive
to the semiconductor industries. However,
increasing variability in the device characteristics,
soft errors and device degradation in CMOS
technologies pose major challenges in the future
scaling. Variation in process, voltage and
temperature cause uncertainty in the worst case
critical path delays. Delay Margins or Voltage
Margins are added to obtain fully functional
chips, but results in high power consumption
and/or performance loss.
In electronics, a flip-flop or latch is
a circuit that has two stable states and can be used
to store state information. The circuit can be made
to change state by signals applied to one or more
control inputs and will have one or two outputs. It
is the basic storage element in sequential logic.
Flip-flops and latches are a fundamental building
block of digital electronics systems used in
computers, communications, and many other
types of systems. In VLSI systems, the clock
system consumes anywhere between 20-50% of
the total chip power with approximately 90% of
the clocking power used to drive storage elements
such as flip-flops. The significant power
consumption of the clock system is mainly due to
the 100% transition probability of the clock
signal.
Keywords- CMOS, Leakage Power, Static Power,
Threshold Voltage, Dynamic Power.
I. INTRODUCTION
The increasing speed and complexity of
today’s designs implies a significant increase in the
power consumption of very large scale integration
(VLSI). To meet this challenge, researchers have
developed many different design techniques to
reduce power. The complexity of today’s ICs, with
over 100 million transistors, clocked at over 1 GHz,
means manual power optimization would be
hopelessly slow and all too likely to contain errors.
One of the key features that led to the success of
complementary metal-oxide semiconductor, or
CMOS technology was its intrinsic low-power
consumption. Reduction of power consumption
makes a device more reliable. The need for devices
that consume a minimum amount of power was a
major driving force behind the development of
CMOS technologies.
II. CMOS
CMOS stands for Complementary metal–
oxide–semiconductor. It is a technology for
constructing integrated circuits. It is used
in microprocessors, microcontrollers, static RAM,
and other digital logic circuits. CMOS technology is
also used for several analog circuits such as image
sensors (CMOS sensor), data converters, and highly
integrated transceivers for many types of
communication. The CMOS devices are best known
for low power consumption. Another interesting
feature of CMOS is its nice scaling properties, which
has permitted a steady decrease in the feature size
allowing for more and more complex systems on a
single chip, working at higher clock frequencies.
CMOS technology feature size and threshold voltage
have been scaling down for decades for achieving
high density and high performance. Because of this
technology trend, transistor leakage power has
increased exponentially. As the feature size becomes
smaller, shorter channel lengths result in increased
sub-threshold leakage current through a transistor
when it is off. Low threshold voltage also results in
increased sub-threshold leakage current because
transistors cannot be turned off completely. For these
reasons, static power consumption, i.e., leakage
power dissipation, has become a significant portion
of total power consumption for current and future
silicon technologies. There are several VLSI
techniques to reduce leakage power [17]. The sub-
threshold leakage current of a MOS device can be
modeled as follows [10,16]:
Where
This equation can be approximated in the equally
well known form:
Where
Where μeff is the electron/hole mobility, Cox is the
gate capacitance per unit area, W and L are width and
Ruchika Mittal, Sarita Bajaj, Neha / International Journal of Engineering Research and
Applications (IJERA) ISSN: 2248-9622 www.ijera.com
Vol. 3, Issue 3, May-Jun 2013, pp.1365-1367
1366 | P a g e
length of the channel respectively, Vt is the threshold
voltage, n is the sub-threshold swing co-efficient, VT
is the thermal voltage, Vgs is the transistor gate to
source voltage and Vds is the drain to source voltage.
Fig. 1 shows the subthreshold leakage trends with
deep-submicron technologies [7, 18].
Fig. 1 Subthreshold leakage power trends
III. POWER DISSIPATION
The increasing use of portable and battery
operated devices has raised the demand for low
power devices. With higher speed and density of
CMOS circuits, power dissipation has become a
growing concern.
A. Dynamic Power Dissipation
Dynamic power dissipation occurs in the
logic gates that are in the process of switching from
one state to another. It is caused by the current flow
from the charging and discharging of parasitic
capacitances.
B. Static Power Dissipation
Static power dissipation is associated with
inactive logic gates (i.e., not currently switching from
one state to another). It is caused by leakage currents
while the gates are idle; that is, no output transitions.
IV. LITERATURE REVIEW
Hiroshi Kawaguchi et al. implemented A
Reduced Clock-Swing Flip-Flop (RCSFF) for 63%
Power Reduction. RCSFF is composed of a reduced
swing clock driver and a special flip-flop which
embodies the leak current cutoff mechanism. It can
reduce the clock system power of a VLSI down to
one-third compared to the conventional flip-flop
through the reduced clock swing down to 1 V.
Chulwoo Kim et al. described A Low-Swing
Clock Double-Edge Triggered Flip-Flop. This is
developed to reduce power consumption significantly
compared to conventional flip-flops. Power
consumption in the clock tree is reduced because
LSDFF uses a double-edge triggered operation as
well as a low-swing clock. The power saving in flip-
flop operation is estimated to be 28.6% to 49.6% with
additional 78% power saving in the clock network.
Dan Ernst et al. implemented about circuit-level
correction of timing errors for low-power operation
using Razor FF. Here Dynamic voltage scaling is
used which is one of the more effective and widely
used methods for power-aware computing. .
Subhasish Mitra et al. described about Built-
In Soft Error Resilience for Robust System Design. It
is design technique for correcting soft errors in
latches, flip-flops and combinational logic.
Yuji Kunitake et al. implemented about A
Simple Flip-Flop Circuit for Typical-Case Designs
for DSM. In this paper, canary logic is proposed that
enables the typical-case design. and is easier to
design than the previously proposed Razor logic by
eliminating delayed clock. Simulations shows that the
canary logic achieves average power reduction of
30%.
David Li et al. illustrated Design of a Novel
High-Performance Reduced Clock-Swing Pre-
Discharge Flip-Flop. These are very attractive in
high-performance deep-pipelined systems since
significant power reduction can be achieved with
minimal performance degradation.
Touqeer Azam et al. concluded the robust
low power design which provides robust low power
circuit operation under different variations at a
reduced performance/ power loss. Sensor based
design methodology was presented that minimizes
pessimistic margin, while providing reliable circuit
operation.
Kavita Mehta et al. enumerates about Low
Power Efficient D Flip Flop Circuit that explains low
power, high speed design of D flip flop. In this
various techniques to minimize sub threshold leakage
power as well as the power consumption of the
CMOS circuits was presented. It shows a design for
D flip flop to increase the overall speed of the system
as compared to other circuits to achieve low power
consumption with minimum transistor count.
Uma Nirmal et al. enumerated A Low
Power High Speed Adders using MTCMOS
Technique. Addition is the most basic arithmetic
operation and adder is the most fundamental
arithmetic component of the processor. Several
adders can be implemented in many ways such as
carry look-ahead (CLA), carry-skip adder (CSA) and
ripple carry adder (RCA) depending on the delay and
power consumption requirements. MTCMOS is an
effective circuit level technique that provides a high
performance and low-power design by utilizing both
low and high-threshold voltage transistors.
Yuji Kunitake et al. worked on the
Possibilities to Miss Predicting Timing Errors in
Canary Flip-flops. An alternative timing-error-
predicting FF named canary FF and its critical issues
has discussed in this paper. Simulations unveil that
Ruchika Mittal, Sarita Bajaj, Neha / International Journal of Engineering Research and
Applications (IJERA) ISSN: 2248-9622 www.ijera.com
Vol. 3, Issue 3, May-Jun 2013, pp.1365-1367
1367 | P a g e
canary FF occasionally misses predicting timing
errors.
M. Janaki Rani et al. analysed about leakage
power reduction and analysis of CMOS sequential
circuits. A significant portion of the total power
consumption is mainly due to leakage power. It is
important to reduce leakage power in portable
systems. In this paper two techniques such as
transistor stacking and self-adjustable voltage level
circuit for reducing leakage power in sequential
circuits are described. Simulation results show that
the proposed pass transistor based D flip-flop using
self-adjustable voltage level circuit has the least
leakage power dissipation of 9.13nW.
V. PROPOSED WORK
In the proposed work for Leakage power
reduction, Performance Analysis of various kinds of
flip flops e.g. RCSFF, Gated D, Set D, J-K,
MTCMOS type D Flip Flop will be done at different
values of supply voltages, temperatures to find which
will perform better.
VI. CONCLUSION
In low power applications area and power
consumption by the device are the main technological
aspects to prefer a design over the other contending
designs. In this paper various literatures have studied
and based on all the above comparisons among
different techniques will be done to find which one is
better.
REFERENCES
[1] Hiroshi Kawaguchi and Takayasu Sakurai
“A Reduced Clock-Swing Flip-Flop
(RCSFF) for 63% Power Reduction” IEEE
1998.
[2] Young-Su Kwon, In Cheol Park and Chong-
Min Kyung “A New Single Clock Flip Flop
for Half Swing Clocking” Vol. E82-A, No.
11, IEICE 1999.
[3] Chulwoo Kim, Member, IEEE, and Sung-
Mo (Steve) Kang, Fellow, IEEE “A Low-
Swing Clock Double-Edge Triggered Flip-
Flop” VOL. 37, NO. 5, IEEE 2002.
[4] Sung- Hyun Yang, Younggap You and
Kyoung- Rok Cho “ A New Dynamic D Flip
Flop Aiming at Glitch and Charge Sharing
Free” Vol. E86-C, No. 3, IEICE 2003.
[5] Afshin Abdollahi, Farzan Fallah and
Massoud Pedram “Leakage Current
Reduction in CMOS VLSI Circuits by Input
Vector Control” Vol. 12, No. 2, IEEE 2004.
[6] Dan Ernst, Shidhartha Das, Seokwoo Lee,
David Blaauw, Todd Austin, Trevor Mudge,
University of Michigan, Nam Sung Kim”
Razor: circuit-level correction of timing
errors for low-power operation” IEEE 2004.
[7] “International Technology Roadmap for
Semiconductors (ITRS-05)
http://www.itrs.net/Links/2005ITRS/Design
2005.pdf.
[8] Subhashish Mitra, Ming zhang, Norbert
seifert, TM Mak and Kee Sup Kim “Built-in
soft error resilience for robust system
design,” IEEE 2007.
[9] Sato, Toshinori and Kunitake, Yuji “A
Simple Flip-Flop Circuit for Typical-Case
Designs for DFM” page(s): 539 –
544, ISQED 2007.
[10] Borivoje Nikolic “Design in the Power–
Limited Scaling Regime”, IEEE transactions
on Electron Devices, Vol. 55, No. 1, pp.71-
83, IEEE 2008.
[11] David Li, Pierce Chuang, Jaspal Singh Shah,
Manoj Sachdev “Design of a Novel High-
Performance Reduced Clock-Swing Pre-
Discharge Flip-Flop” IEEE 2009.
[12] Touqeer azam and David R.S. Cumming
“Robust low power Design in nano cmos
technologies,” crown 2010.
[13] Kavita Mehta, Neha arora, Prof. B.P. singh
“Low power efficient D Flip Flop circuit,”
ISDMISC 2011.
[14] Uma Nirmal, Geetanjali Sharma, Yogesh
Misra “A Low Power High Speed Adders
using MTCMOS Technique” Vol. 13, IEEE
2011.
[15] Yuji Kunitake, Toshinori Sato, Hiroto
Yasuura and Takanori hayashida
“Possibilities to miss predicting timing
errors in canary flip flops,” Vol 20, No.4,
IEEE 2011.
[16] M. Janaki Rani, S. Malarkann “Leakage
power reduction and analysis of cmos
sequential circuits” Vol. 3 No.1, VLSICS
2012.
[17] Md. Asif Jahangir Chowdhury, Md. Shahriar
Rizwan, and M. S. Islam “An Efficient
VLSI Design Approach to Reduce Static
Power using Variable Body Biasing”
WASET 2012.
[18] M. Geetha Priya, K. Baskaran, D.
Krishnaveni “A Novel Leakage Power
Reduction Technique for CMOS VLSI
Circuits” Vol.74 No.1, pp. 96-105, EJSR
2012.
[19] M. Janaki Rani, S. Malarkann “Leakage
power reduction and analysis of cmos
sequential circuits” Vol. 3 No.1, VLSICS
2012.

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Hx3313651367

  • 1. Ruchika Mittal, Sarita Bajaj, Neha / International Journal of Engineering Research and Applications (IJERA) ISSN: 2248-9622 www.ijera.com Vol. 3, Issue 3, May-Jun 2013, pp.1365-1367 1365 | P a g e Leakage Power Reduction in CMOS Ruchika Mittal1 , Sarita Bajaj2 , Neha3 1, 2 (Elect. & Comm. Deptt. DVIET, Karnal, Haryana) 3 (Elect. & Comm. Deptt. RPIIT, Bastara, Haryana) Abstract The advantage of scaling devices is to achieve high performance, low power, large integration and low cost continues to be attractive to the semiconductor industries. However, increasing variability in the device characteristics, soft errors and device degradation in CMOS technologies pose major challenges in the future scaling. Variation in process, voltage and temperature cause uncertainty in the worst case critical path delays. Delay Margins or Voltage Margins are added to obtain fully functional chips, but results in high power consumption and/or performance loss. In electronics, a flip-flop or latch is a circuit that has two stable states and can be used to store state information. The circuit can be made to change state by signals applied to one or more control inputs and will have one or two outputs. It is the basic storage element in sequential logic. Flip-flops and latches are a fundamental building block of digital electronics systems used in computers, communications, and many other types of systems. In VLSI systems, the clock system consumes anywhere between 20-50% of the total chip power with approximately 90% of the clocking power used to drive storage elements such as flip-flops. The significant power consumption of the clock system is mainly due to the 100% transition probability of the clock signal. Keywords- CMOS, Leakage Power, Static Power, Threshold Voltage, Dynamic Power. I. INTRODUCTION The increasing speed and complexity of today’s designs implies a significant increase in the power consumption of very large scale integration (VLSI). To meet this challenge, researchers have developed many different design techniques to reduce power. The complexity of today’s ICs, with over 100 million transistors, clocked at over 1 GHz, means manual power optimization would be hopelessly slow and all too likely to contain errors. One of the key features that led to the success of complementary metal-oxide semiconductor, or CMOS technology was its intrinsic low-power consumption. Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. II. CMOS CMOS stands for Complementary metal– oxide–semiconductor. It is a technology for constructing integrated circuits. It is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. The CMOS devices are best known for low power consumption. Another interesting feature of CMOS is its nice scaling properties, which has permitted a steady decrease in the feature size allowing for more and more complex systems on a single chip, working at higher clock frequencies. CMOS technology feature size and threshold voltage have been scaling down for decades for achieving high density and high performance. Because of this technology trend, transistor leakage power has increased exponentially. As the feature size becomes smaller, shorter channel lengths result in increased sub-threshold leakage current through a transistor when it is off. Low threshold voltage also results in increased sub-threshold leakage current because transistors cannot be turned off completely. For these reasons, static power consumption, i.e., leakage power dissipation, has become a significant portion of total power consumption for current and future silicon technologies. There are several VLSI techniques to reduce leakage power [17]. The sub- threshold leakage current of a MOS device can be modeled as follows [10,16]: Where This equation can be approximated in the equally well known form: Where Where μeff is the electron/hole mobility, Cox is the gate capacitance per unit area, W and L are width and
  • 2. Ruchika Mittal, Sarita Bajaj, Neha / International Journal of Engineering Research and Applications (IJERA) ISSN: 2248-9622 www.ijera.com Vol. 3, Issue 3, May-Jun 2013, pp.1365-1367 1366 | P a g e length of the channel respectively, Vt is the threshold voltage, n is the sub-threshold swing co-efficient, VT is the thermal voltage, Vgs is the transistor gate to source voltage and Vds is the drain to source voltage. Fig. 1 shows the subthreshold leakage trends with deep-submicron technologies [7, 18]. Fig. 1 Subthreshold leakage power trends III. POWER DISSIPATION The increasing use of portable and battery operated devices has raised the demand for low power devices. With higher speed and density of CMOS circuits, power dissipation has become a growing concern. A. Dynamic Power Dissipation Dynamic power dissipation occurs in the logic gates that are in the process of switching from one state to another. It is caused by the current flow from the charging and discharging of parasitic capacitances. B. Static Power Dissipation Static power dissipation is associated with inactive logic gates (i.e., not currently switching from one state to another). It is caused by leakage currents while the gates are idle; that is, no output transitions. IV. LITERATURE REVIEW Hiroshi Kawaguchi et al. implemented A Reduced Clock-Swing Flip-Flop (RCSFF) for 63% Power Reduction. RCSFF is composed of a reduced swing clock driver and a special flip-flop which embodies the leak current cutoff mechanism. It can reduce the clock system power of a VLSI down to one-third compared to the conventional flip-flop through the reduced clock swing down to 1 V. Chulwoo Kim et al. described A Low-Swing Clock Double-Edge Triggered Flip-Flop. This is developed to reduce power consumption significantly compared to conventional flip-flops. Power consumption in the clock tree is reduced because LSDFF uses a double-edge triggered operation as well as a low-swing clock. The power saving in flip- flop operation is estimated to be 28.6% to 49.6% with additional 78% power saving in the clock network. Dan Ernst et al. implemented about circuit-level correction of timing errors for low-power operation using Razor FF. Here Dynamic voltage scaling is used which is one of the more effective and widely used methods for power-aware computing. . Subhasish Mitra et al. described about Built- In Soft Error Resilience for Robust System Design. It is design technique for correcting soft errors in latches, flip-flops and combinational logic. Yuji Kunitake et al. implemented about A Simple Flip-Flop Circuit for Typical-Case Designs for DSM. In this paper, canary logic is proposed that enables the typical-case design. and is easier to design than the previously proposed Razor logic by eliminating delayed clock. Simulations shows that the canary logic achieves average power reduction of 30%. David Li et al. illustrated Design of a Novel High-Performance Reduced Clock-Swing Pre- Discharge Flip-Flop. These are very attractive in high-performance deep-pipelined systems since significant power reduction can be achieved with minimal performance degradation. Touqeer Azam et al. concluded the robust low power design which provides robust low power circuit operation under different variations at a reduced performance/ power loss. Sensor based design methodology was presented that minimizes pessimistic margin, while providing reliable circuit operation. Kavita Mehta et al. enumerates about Low Power Efficient D Flip Flop Circuit that explains low power, high speed design of D flip flop. In this various techniques to minimize sub threshold leakage power as well as the power consumption of the CMOS circuits was presented. It shows a design for D flip flop to increase the overall speed of the system as compared to other circuits to achieve low power consumption with minimum transistor count. Uma Nirmal et al. enumerated A Low Power High Speed Adders using MTCMOS Technique. Addition is the most basic arithmetic operation and adder is the most fundamental arithmetic component of the processor. Several adders can be implemented in many ways such as carry look-ahead (CLA), carry-skip adder (CSA) and ripple carry adder (RCA) depending on the delay and power consumption requirements. MTCMOS is an effective circuit level technique that provides a high performance and low-power design by utilizing both low and high-threshold voltage transistors. Yuji Kunitake et al. worked on the Possibilities to Miss Predicting Timing Errors in Canary Flip-flops. An alternative timing-error- predicting FF named canary FF and its critical issues has discussed in this paper. Simulations unveil that
  • 3. Ruchika Mittal, Sarita Bajaj, Neha / International Journal of Engineering Research and Applications (IJERA) ISSN: 2248-9622 www.ijera.com Vol. 3, Issue 3, May-Jun 2013, pp.1365-1367 1367 | P a g e canary FF occasionally misses predicting timing errors. M. Janaki Rani et al. analysed about leakage power reduction and analysis of CMOS sequential circuits. A significant portion of the total power consumption is mainly due to leakage power. It is important to reduce leakage power in portable systems. In this paper two techniques such as transistor stacking and self-adjustable voltage level circuit for reducing leakage power in sequential circuits are described. Simulation results show that the proposed pass transistor based D flip-flop using self-adjustable voltage level circuit has the least leakage power dissipation of 9.13nW. V. PROPOSED WORK In the proposed work for Leakage power reduction, Performance Analysis of various kinds of flip flops e.g. RCSFF, Gated D, Set D, J-K, MTCMOS type D Flip Flop will be done at different values of supply voltages, temperatures to find which will perform better. VI. CONCLUSION In low power applications area and power consumption by the device are the main technological aspects to prefer a design over the other contending designs. In this paper various literatures have studied and based on all the above comparisons among different techniques will be done to find which one is better. REFERENCES [1] Hiroshi Kawaguchi and Takayasu Sakurai “A Reduced Clock-Swing Flip-Flop (RCSFF) for 63% Power Reduction” IEEE 1998. [2] Young-Su Kwon, In Cheol Park and Chong- Min Kyung “A New Single Clock Flip Flop for Half Swing Clocking” Vol. E82-A, No. 11, IEICE 1999. [3] Chulwoo Kim, Member, IEEE, and Sung- Mo (Steve) Kang, Fellow, IEEE “A Low- Swing Clock Double-Edge Triggered Flip- Flop” VOL. 37, NO. 5, IEEE 2002. [4] Sung- Hyun Yang, Younggap You and Kyoung- Rok Cho “ A New Dynamic D Flip Flop Aiming at Glitch and Charge Sharing Free” Vol. E86-C, No. 3, IEICE 2003. [5] Afshin Abdollahi, Farzan Fallah and Massoud Pedram “Leakage Current Reduction in CMOS VLSI Circuits by Input Vector Control” Vol. 12, No. 2, IEEE 2004. [6] Dan Ernst, Shidhartha Das, Seokwoo Lee, David Blaauw, Todd Austin, Trevor Mudge, University of Michigan, Nam Sung Kim” Razor: circuit-level correction of timing errors for low-power operation” IEEE 2004. [7] “International Technology Roadmap for Semiconductors (ITRS-05) http://www.itrs.net/Links/2005ITRS/Design 2005.pdf. [8] Subhashish Mitra, Ming zhang, Norbert seifert, TM Mak and Kee Sup Kim “Built-in soft error resilience for robust system design,” IEEE 2007. [9] Sato, Toshinori and Kunitake, Yuji “A Simple Flip-Flop Circuit for Typical-Case Designs for DFM” page(s): 539 – 544, ISQED 2007. [10] Borivoje Nikolic “Design in the Power– Limited Scaling Regime”, IEEE transactions on Electron Devices, Vol. 55, No. 1, pp.71- 83, IEEE 2008. [11] David Li, Pierce Chuang, Jaspal Singh Shah, Manoj Sachdev “Design of a Novel High- Performance Reduced Clock-Swing Pre- Discharge Flip-Flop” IEEE 2009. [12] Touqeer azam and David R.S. Cumming “Robust low power Design in nano cmos technologies,” crown 2010. [13] Kavita Mehta, Neha arora, Prof. B.P. singh “Low power efficient D Flip Flop circuit,” ISDMISC 2011. [14] Uma Nirmal, Geetanjali Sharma, Yogesh Misra “A Low Power High Speed Adders using MTCMOS Technique” Vol. 13, IEEE 2011. [15] Yuji Kunitake, Toshinori Sato, Hiroto Yasuura and Takanori hayashida “Possibilities to miss predicting timing errors in canary flip flops,” Vol 20, No.4, IEEE 2011. [16] M. Janaki Rani, S. Malarkann “Leakage power reduction and analysis of cmos sequential circuits” Vol. 3 No.1, VLSICS 2012. [17] Md. Asif Jahangir Chowdhury, Md. Shahriar Rizwan, and M. S. Islam “An Efficient VLSI Design Approach to Reduce Static Power using Variable Body Biasing” WASET 2012. [18] M. Geetha Priya, K. Baskaran, D. Krishnaveni “A Novel Leakage Power Reduction Technique for CMOS VLSI Circuits” Vol.74 No.1, pp. 96-105, EJSR 2012. [19] M. Janaki Rani, S. Malarkann “Leakage power reduction and analysis of cmos sequential circuits” Vol. 3 No.1, VLSICS 2012.