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Temperature Programmed Desorption of
Ar Gas from TiO2: A Surface Science
Perspective
Oliver Heywood
Primary Investigator: Richard M. Osgood
Senior Scientist: Denis V. Potapenko
Why study TiO2?
• Solar cells
• Gas sensors
• Anti-corrosion
coatings
• Biocompatibility of
bone implants
• White pigments
Surface effects critical to many of these applications
Scanning Tunneling Microscopy
M A
(110) Face of Rutile TiO2
110
101
011
100
One Monolayer = 350 pm
40 nm
‘Terrace’ Structure
Atomic Rows
Tip Sharpness Changes
The Same Surface Zoomed In
Metal Impurity
Even More Zoom!
Ti
O
Metal Impurity
Cleaning a Sample for the STM
1. Sputtering – bombardment
with inert gas ions
2. Annealing – healing the
crystal by heating
Ar+
900 k
Ar Blisters Formed During Annealing
0.3 nm
~ 15 nm
~ 5nm
How can we investigate these features further?
TiO2
Heating Plate
Thermocouple
0 100 200 300 400
0
200
400
600
800
Time (Seconds)
Temperature(K)
Mass Spectrometer
Important Surface Technique:
Temperature Programed Desorption
Desorbed Ar
Vacuum Chamber
Will it work on a sub-surface species?
We call it: Buried Atom TPD!
The sharpness of these features is surprising
Modeling using Interstitial Diffusion
C – concentration of Ar
T – temperature
D – diffusion constant
500 600 700 800 900
0
0.02
0.04
0.06
0.08
TPD simulation
Temperature, K
RelativestrengthofArsurfaceflux
Surface
0 2 4 6 8 10
0
0.2
0.4
0.6
0.8
1
Depth x, nm
ArConcentration,0to1scale
Concentration Profiles
T=500
T=800
T=850
T=900
T=950
A New Model with Interstitial Attractive Force
0 0.2 0.4 0.6 0.8 1
0
0.2
0.4
0.6
0.8
1
Concentration
PotentialEnergy
crystal lattice unchanged
local distortion begins
distortion complete
Simulations with the New Model
(dE/dC = -9)
0 2 4 6 8 10
0
0.2
0.4
0.6
0.8
1
Depth x, nm
ArConcentration,0to1scale
Concentration Profiles
T=500
T=800
T=850
T=900
T=950
500 600 700 800 900
0
0.02
0.04
0.06
0.08
0.1
TPD simulation
Temperature, K
RelativestrengthofArsurfaceflux
Increase the Strength of the ‘Attractive Force’
(dE/dC = -18)
300 400 500 600 700 800 900 1000
0
2
4
6
8
x 10
-3 TPD simulation
Temperature, K
RelativestrengthofArsurfaceflux
0 2 4 6 8 10
0
0.2
0.4
0.6
0.8
1
Depth x, nm
ArConcentration,0to1scale
Concentration Profiles
T=500
T=550
T=600
T=650
T=700
T=750
T=800
T=850
T=900
T=950
Partial Success!
Acknowledgements
Many thanks go to...
Principle Investigator Professor Richard Osgood
Senior Scientist Denis Potapenko
Graduate Student Zhisheng Li
Program Coordinator Dario Vasquez
Questions
TPD Simulation
300 400 500 600 700 800 900 1000
-0.01
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
Temperature, K
RelativestrengthofArsurfaceflux
dE/dC = -0
dE/dC = -3
dE/dC = -6
dE/dC = -9
dE/dC = -12
dE/dC = -15
dE/dC = -18

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final_presentation_Oliver

  • 1. Temperature Programmed Desorption of Ar Gas from TiO2: A Surface Science Perspective Oliver Heywood Primary Investigator: Richard M. Osgood Senior Scientist: Denis V. Potapenko
  • 2. Why study TiO2? • Solar cells • Gas sensors • Anti-corrosion coatings • Biocompatibility of bone implants • White pigments Surface effects critical to many of these applications
  • 4. (110) Face of Rutile TiO2 110 101 011 100 One Monolayer = 350 pm 40 nm
  • 5. ‘Terrace’ Structure Atomic Rows Tip Sharpness Changes The Same Surface Zoomed In Metal Impurity
  • 7. Cleaning a Sample for the STM 1. Sputtering – bombardment with inert gas ions 2. Annealing – healing the crystal by heating Ar+ 900 k
  • 8. Ar Blisters Formed During Annealing 0.3 nm ~ 15 nm ~ 5nm How can we investigate these features further?
  • 9. TiO2 Heating Plate Thermocouple 0 100 200 300 400 0 200 400 600 800 Time (Seconds) Temperature(K) Mass Spectrometer Important Surface Technique: Temperature Programed Desorption Desorbed Ar Vacuum Chamber Will it work on a sub-surface species?
  • 10. We call it: Buried Atom TPD! The sharpness of these features is surprising
  • 11. Modeling using Interstitial Diffusion C – concentration of Ar T – temperature D – diffusion constant 500 600 700 800 900 0 0.02 0.04 0.06 0.08 TPD simulation Temperature, K RelativestrengthofArsurfaceflux Surface 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 Depth x, nm ArConcentration,0to1scale Concentration Profiles T=500 T=800 T=850 T=900 T=950
  • 12. A New Model with Interstitial Attractive Force 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 Concentration PotentialEnergy crystal lattice unchanged local distortion begins distortion complete
  • 13. Simulations with the New Model (dE/dC = -9) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 Depth x, nm ArConcentration,0to1scale Concentration Profiles T=500 T=800 T=850 T=900 T=950 500 600 700 800 900 0 0.02 0.04 0.06 0.08 0.1 TPD simulation Temperature, K RelativestrengthofArsurfaceflux
  • 14. Increase the Strength of the ‘Attractive Force’ (dE/dC = -18) 300 400 500 600 700 800 900 1000 0 2 4 6 8 x 10 -3 TPD simulation Temperature, K RelativestrengthofArsurfaceflux 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 Depth x, nm ArConcentration,0to1scale Concentration Profiles T=500 T=550 T=600 T=650 T=700 T=750 T=800 T=850 T=900 T=950 Partial Success!
  • 15. Acknowledgements Many thanks go to... Principle Investigator Professor Richard Osgood Senior Scientist Denis Potapenko Graduate Student Zhisheng Li Program Coordinator Dario Vasquez
  • 17. TPD Simulation 300 400 500 600 700 800 900 1000 -0.01 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 Temperature, K RelativestrengthofArsurfaceflux dE/dC = -0 dE/dC = -3 dE/dC = -6 dE/dC = -9 dE/dC = -12 dE/dC = -15 dE/dC = -18