The document discusses the concepts of equilibrium distribution of electrons and holes in semiconductors, including the derivation of the no and po equations. It covers key topics such as intrinsic carrier concentration, dopant atoms, and statistics of donors and acceptors. Additionally, it explores the positioning of the Fermi energy level in compensated semiconductors.

1. ETE444- Lecture 8
The Semiconductor
in Equilibrium
Chapter 4

3. Equilibrium Distribution of Electrons and Holes

5. The no and po Equations
effective density of states, function in the valence band.

6. Example 4.1 (page 107)
EXAMPLE 4.2
E4.1, E4.2

7. The Intrinsic Carrier Concentration

9. EXAMPLE 4.3

11. DOPANT ATOMS AND ENERGY LEVELS

16. Equilibrium Distribution of Electrons and Holes

17. EXAMPLE 4.5

18. The no po Product

19. STATISTICS OF DONORS AND ACCEPTORS

21. compensated Semiconductors

22. Equilibrium Electron and Hole Concentrations

23. POSITION OF FERMI ENERGY LEVEL