The document discusses wide band gap semiconductors like silicon carbide (SiC) and gallium nitride (GaN). These semiconductors have band gaps that are roughly 3-4 times wider than traditional silicon semiconductors. Wide band gap semiconductors can operate at much higher temperatures, voltages, and frequencies than silicon, making them well-suited for applications in power electronics, electric vehicles, energy storage, and military systems. They allow for more compact, efficient, and durable electronic components.

1. ELECTRONIC
CIRCUITS
WIDE BAND GAP SEMICONDUCTORS
SUBMITTED BY:
ABHIDNYA KADU 204113
ABHISHEK S 204114
AKKAHSHH AGARWAAL 204115
ALABHAYA PRAJJWAL 204117

2. INTRODUCTION
• Invention of semiconductors 50 years ago  modern
computing and electronics era
• Moore’s Law – No. of transistors on a chip doubles
approximately every 2 years
• Limit to pack transistors – heat issues, leakage issues
• In power electronics – challenge to achieve new devices with
greater power density and energy efficiency
• Innovation in silicon is nearing it’s physical limits

3. WIDE BAND GAP SEMICONDUCTORS
• Silicon Carbide (SiC) and Gallium Nitride (GaN) have emerged as
optimal solutions for high power and high temperature applications
• Roughly ten times better conduction and switching properties than
traditional transistors
• Smaller faster and more efficient
• Greater durability and higher reliability
• Electric vehicles, energy storage and generation
• Efficient for AC-DC conversion and vice-versa

4. WHAT IS WIDE BAND
GAP?
• Relatively wide energy gap between valence band and conduction
band
• Electrons – jump from valence to conduction band – thermal/optical
excitation
• Bandgap – switch on and off as desired
• Higher band gap – superior
• characteristics to silicon
• Silicon – 1.1eV
• WBG – 3.3ev - 3.4eV

5. APPLICATIONS
• Military applications – Weapons laying RADAR, submarine VLF
communications
• Space Program
• Electric Vehicles
• LED
• HEMT