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Dr. Anant Agarwal
Senior Advisor, Wide Band Gap Technology
US Department of Energy
Wide Bandgap Devices
Enabling a Revolution in Power Electronics
• Lockheed-Martin
• Raytheon
• Navitas Systems
• UChicago Argonne, LLC
• Rensselaer Polytechnic Institute (RPI)
• Tezzron Semiconductor
• GeneSiC Semiconductor
New PA Members
7
• AC Power Adaptors and Power Supplies:
Servers, TVs, laptops, cell phones, tablets, printers, appliances…
Product Features:
• Power Input: 100-240V ~ 50-60HZ 1.5A
• Power Output: 19.5V == 4.62A
• Peak Efficiency: 75-80%
• Projected Impacts:
Easy marketing case as people don’t like to carry bulky power supplies – first adopter
Subsequent penetration in cost sensitive markets such as TVs and appliances
Eventually 1-2 % of all electricity can be saved in U.S. through higher efficiency
High Impact- Computer Power Supplies
WBG inside
Peak Efficiency: 95%
100 W
8
The best Device: GaN Lateral HEMT
Status: Commercialized by 3 or more vendors in US.
Strategy: Fund demonstrations and lower the cost by transfer to Foundry
3-4% of electricity used in households
• Server Power Supplies
• TVs
• Set top boxes
• PCs
• Monitors
• Game Consoles
200-600 V – Switch Mode Power Supplies
US Manufacturing Advantage by combining Several Key Technologies
in an Integrated Approach
13.8 kV
3 phase
60 Hz
1-50 MW
60 Hz Motor
1800 RPM
Compressor
Fixed Speed
9 K-18 K RPM
Traditional
20-40% energy is wasted
with throttles and
other mechanical devices
4.16 kV
3 phase
60 Hz
Big
60 Hz
Transformer
Gear
Box
1:G(5-10)
13.8 kV
3 phase
60 Hz
Variable
Speed Drive
SiC Based
1-50 MW
Gx60 Hz Motor
G x smaller
Volume
Compressor
Variable Speed
9 K-18 K RPM
Delivered as
one box
New Approach
• Big 60 Hz Transformer replaced by small high frequency Transformer
• Motor size reduced by 5x – cheaper, less magnets
• 20-40% energy per motor system is saved due to Variable Speed Drive – pay-back < 3 years
• Gear Box eliminated
• Smaller Foot-print (up to 5x)
The U.S. would gain a competitive
advantage over foreign competitors
by designing and manufacturing a
“Made-in-the-USA” integrated MV-
class electric motor system.
11
12
13
14
Application of WBG Devices in Heavy Duty Vehicles
644 Loader for Construction and Agriculture: used to be hydraulic
200 kW Si Based Dual-Inverter (VSD) saves 37% fuel for same Ton of load moved & 25% gallons/hr
• 700 V DC bus, 6 kHz switching
• Higher productivity since Operator does not
have to manage pedal and brakes at the same time
• Easier operation due to VDS power-train
Use of WBG devices will result in additional 15%
fuel savings if measured in gallons/hour
• 1050 V DC Bus, 10 kHz to 15 kHz switching
• Lower Copper weight due to reduced line current
• Smaller motor and generator due to higher voltage
• Lower magnetic losses in the motor and generator due to reduced ripple
• Only one coolant loop as inverter could use engine coolant loop
• Built in DC to DC converter (20 kHz and beyond) – saves regenerative energy
• 2 speed as opposed to 3-speed transmission
• Can be scaled to 0.5 MW inverter for larger vehicles
• SiC can make Fast Chargers Cheaper and more Efficient –
Charge an EV in 10-15 min. or less
• 30-50 kW Charger
• Input Power: 480 V, 3 Phase AC
• Input Current: 79 A Max
• Efficiency Rating: >94.6%
• Weight: 1422 lb
• Total Capital + Operating Cost: $ 75 K
EV Fast Chargers- Essential for EV Adoption
Delta DC Quick Charger
WBG
Inside
Internal Use Only
• High Cost of WBG Chips
‒ Lower systems cost arguments don’t work with
10x higher semiconductor cost
‒ Must reduce cost of WBG Semiconductors –
Achieve parity with Si costs in 5 years
• PE Community slow to change and adapt new
technologies
‒ Lack of experience with WBG semiconductors
‒ False perceptions of poor reliability of WBG
semiconductors
‒ Must train Graduate students to use WBG devices
in Power Electronics
Barriers to Acceptance
Benefits of Using Commercial Si Foundry
• Typically only 10-20% capacity of commercial foundry utilized
– 90% of the processes are the same
• Innovation by researchers, small companies and students through
design and access to fabless model—similar to MOSIS
• Reduce technology risk…encourage investments by VC firms
‒ $10-15 M is required to create a product as opposed to $100 M
Loaded US based
6” Si Foundry
Small and Large Industry
DoD
Universities National
Labs
6” GaN 6” SiC
Goal: Achieve 10 cents/amp for 1200 V switches in x yrs
SiC and GaN devices can be competitive with Silicon
0
10
20
30
40
50
60
1 2 3 4
¢/A for 1200 V, 20 A SiC MOSFET
100 mm dedicated Foundry
Low Volume
100 mm Commercial
(Reduced process cost & higher yield)
150 mm Commercial
(Substrate +Epi costs dominate)
150 mm Commercial
High Volume, Fabless
Current Silicon IGBT
Overcoming Reluctance to Adoption
Goal: Train at least 100 Graduate students in 5 years
Education and Training
• Establish programs at different educational levels in:
‒ WBG technology
‒ Power Electronics applications with WBG
devices
• Grow experienced workforce
• Generate future leaders in power electronics
• Develop text book on design and processing of WBG
power devices
‒ Equivalent to Mead & Conway - 1979
• Reduce chip costs 50% every 2 years with improved
performance
‒ Achieve 10 cents/amp in x years
‒ Manufacturing 8-inch wafers in 5-8 years
• WBG devices replacing 600V-1700 V Si in mainstream
applications within 5 years
• Development of 10-15 kV devices enabling new applications
in MV motor and Grid Power Control
The market for WBG devices will double every 2 years from
$100M to $3B in 10 years
WBG Power Semiconductor Roadmap

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01 2015_Aug_13 DoE_Agarwal -- arl mos workshop 2015.pptx

  • 1. Dr. Anant Agarwal Senior Advisor, Wide Band Gap Technology US Department of Energy Wide Bandgap Devices Enabling a Revolution in Power Electronics
  • 2.
  • 3.
  • 4. • Lockheed-Martin • Raytheon • Navitas Systems • UChicago Argonne, LLC • Rensselaer Polytechnic Institute (RPI) • Tezzron Semiconductor • GeneSiC Semiconductor New PA Members
  • 5.
  • 6.
  • 7. 7 • AC Power Adaptors and Power Supplies: Servers, TVs, laptops, cell phones, tablets, printers, appliances… Product Features: • Power Input: 100-240V ~ 50-60HZ 1.5A • Power Output: 19.5V == 4.62A • Peak Efficiency: 75-80% • Projected Impacts: Easy marketing case as people don’t like to carry bulky power supplies – first adopter Subsequent penetration in cost sensitive markets such as TVs and appliances Eventually 1-2 % of all electricity can be saved in U.S. through higher efficiency High Impact- Computer Power Supplies WBG inside Peak Efficiency: 95% 100 W
  • 8. 8 The best Device: GaN Lateral HEMT Status: Commercialized by 3 or more vendors in US. Strategy: Fund demonstrations and lower the cost by transfer to Foundry 3-4% of electricity used in households • Server Power Supplies • TVs • Set top boxes • PCs • Monitors • Game Consoles 200-600 V – Switch Mode Power Supplies
  • 9. US Manufacturing Advantage by combining Several Key Technologies in an Integrated Approach 13.8 kV 3 phase 60 Hz 1-50 MW 60 Hz Motor 1800 RPM Compressor Fixed Speed 9 K-18 K RPM Traditional 20-40% energy is wasted with throttles and other mechanical devices 4.16 kV 3 phase 60 Hz Big 60 Hz Transformer Gear Box 1:G(5-10) 13.8 kV 3 phase 60 Hz Variable Speed Drive SiC Based 1-50 MW Gx60 Hz Motor G x smaller Volume Compressor Variable Speed 9 K-18 K RPM Delivered as one box New Approach • Big 60 Hz Transformer replaced by small high frequency Transformer • Motor size reduced by 5x – cheaper, less magnets • 20-40% energy per motor system is saved due to Variable Speed Drive – pay-back < 3 years • Gear Box eliminated • Smaller Foot-print (up to 5x)
  • 10. The U.S. would gain a competitive advantage over foreign competitors by designing and manufacturing a “Made-in-the-USA” integrated MV- class electric motor system.
  • 11. 11
  • 12. 12
  • 13. 13
  • 14. 14 Application of WBG Devices in Heavy Duty Vehicles 644 Loader for Construction and Agriculture: used to be hydraulic 200 kW Si Based Dual-Inverter (VSD) saves 37% fuel for same Ton of load moved & 25% gallons/hr • 700 V DC bus, 6 kHz switching • Higher productivity since Operator does not have to manage pedal and brakes at the same time • Easier operation due to VDS power-train Use of WBG devices will result in additional 15% fuel savings if measured in gallons/hour • 1050 V DC Bus, 10 kHz to 15 kHz switching • Lower Copper weight due to reduced line current • Smaller motor and generator due to higher voltage • Lower magnetic losses in the motor and generator due to reduced ripple • Only one coolant loop as inverter could use engine coolant loop • Built in DC to DC converter (20 kHz and beyond) – saves regenerative energy • 2 speed as opposed to 3-speed transmission • Can be scaled to 0.5 MW inverter for larger vehicles
  • 15. • SiC can make Fast Chargers Cheaper and more Efficient – Charge an EV in 10-15 min. or less • 30-50 kW Charger • Input Power: 480 V, 3 Phase AC • Input Current: 79 A Max • Efficiency Rating: >94.6% • Weight: 1422 lb • Total Capital + Operating Cost: $ 75 K EV Fast Chargers- Essential for EV Adoption Delta DC Quick Charger WBG Inside Internal Use Only
  • 16. • High Cost of WBG Chips ‒ Lower systems cost arguments don’t work with 10x higher semiconductor cost ‒ Must reduce cost of WBG Semiconductors – Achieve parity with Si costs in 5 years • PE Community slow to change and adapt new technologies ‒ Lack of experience with WBG semiconductors ‒ False perceptions of poor reliability of WBG semiconductors ‒ Must train Graduate students to use WBG devices in Power Electronics Barriers to Acceptance
  • 17. Benefits of Using Commercial Si Foundry • Typically only 10-20% capacity of commercial foundry utilized – 90% of the processes are the same • Innovation by researchers, small companies and students through design and access to fabless model—similar to MOSIS • Reduce technology risk…encourage investments by VC firms ‒ $10-15 M is required to create a product as opposed to $100 M Loaded US based 6” Si Foundry Small and Large Industry DoD Universities National Labs 6” GaN 6” SiC Goal: Achieve 10 cents/amp for 1200 V switches in x yrs
  • 18. SiC and GaN devices can be competitive with Silicon 0 10 20 30 40 50 60 1 2 3 4 ¢/A for 1200 V, 20 A SiC MOSFET 100 mm dedicated Foundry Low Volume 100 mm Commercial (Reduced process cost & higher yield) 150 mm Commercial (Substrate +Epi costs dominate) 150 mm Commercial High Volume, Fabless Current Silicon IGBT
  • 19. Overcoming Reluctance to Adoption Goal: Train at least 100 Graduate students in 5 years Education and Training • Establish programs at different educational levels in: ‒ WBG technology ‒ Power Electronics applications with WBG devices • Grow experienced workforce • Generate future leaders in power electronics • Develop text book on design and processing of WBG power devices ‒ Equivalent to Mead & Conway - 1979
  • 20. • Reduce chip costs 50% every 2 years with improved performance ‒ Achieve 10 cents/amp in x years ‒ Manufacturing 8-inch wafers in 5-8 years • WBG devices replacing 600V-1700 V Si in mainstream applications within 5 years • Development of 10-15 kV devices enabling new applications in MV motor and Grid Power Control The market for WBG devices will double every 2 years from $100M to $3B in 10 years WBG Power Semiconductor Roadmap

Editor's Notes

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