This document provides specifications for silicon zener diode chips with device number MD-1006B. The chips are planar type with aluminum alloy top electrodes and gold back electrodes. They measure 6.3 mils by 6.3 mils by 4.3 mils thick and have 3.9 mil by 3.9 mil pads. Electrical characteristics include a reverse leakage current under 100nA at 4V and under 0.5uA at 5V, a zener voltage between 11-13V at 5mA, and a maximum forward voltage of 1.2V at 20mA.

1. SILICON ZENER DIODE CHIPS
DEVICE NO : MD-1006B
1. Application:
This specification applies to P/N silicon zener diode chips,
Device No. MD-1006B
. Structure:
2-1. planar type.
2-2. Electrodes : Top side : Aluminum alloy.
Back side : Gold Layer
3. Dimensions:
3-1. Chip size : 6.3 mils × 6.3 mils ( 0.160 mm × 0.160 mm ).
3-2. Chip thickness : 4.3 ± 1.0 mils ( 0.110 ± 0.025 mm ).
3-3. Pad Area : 3.9 mils × 3.9 mils ( 0.100 mm × 0.100 mm ).
3-4. Pattern drawing : Refer to the attached drawing.
4. Electrical Characteristics (Ta= ℃
25℃) 5. Pattern Drawing
Parameter Symbol Condition Min. Typ. Max. Unit
VR=4V 100 nA
Reverse
Leakage Current
IR
VR=5V 0.5 µA
Zener Voltage Vz Iz=5mA 11 13
V
Forward Voltage VF IF=20mA 1.2
Remark : forward means M2 postive voltage & M1 Ground
MOUCHIAN OPTOELECTRONIC Co.,Ltd.
Tel: 886-3-5647136
Fax:886-3-5647180
Mar.2007