This document provides specifications for silicon zener diode chips with device number MD-2008. It has the following key points: 1. It is a planar, NPN silicon zener double diode chip with aluminum alloy top electrodes and gold back electrodes. 2. The chip dimensions are 7.9 mils by 7.9 mils by 4.3 mils thick with a pad area of 5.4 mils by 5.4 mils. 3. The electrical characteristics include a leakage current between 100nA and a zener voltage range of 5.5-9V or 5.5-8V when tested at 5mA depending on polarity.

1. SILICON ZENER DIODE CHIPS
DEVICE NO : MD-2008
1. Application:
This specification applies to N/P/N silicon zener double diode chips,
Device No. MD-2008
. Structure:
2-1. planar type.
2-2. Electrodes : Top side : Aluminum alloy.
Back side : Gold Layer
3. Dimensions:
3-1. Chip size : 7.9 mils × 7.9 mils ( 0.200 mm × 0.200 mm ).
3-2. Chip thickness : 4.3 ± 1.0 mils ( 0.110 ± 0.025 mm ).
3-3. Pad Area : 5.4 mils × 5.4 mils ( 0.136 mm × 0.136 mm ).
3-4. Pattern drawing : Refer to the attached drawing.
℃
4. Electrical Characteristics (Ta= 25℃) 5. Pattern Drawing
Unit
Parameter Symbol Condition Min. Typ. Max.
Idf V=4V 100
Leakage Current nA
Idr V=4V 100
Vzf 5.5 9.0
Izf=5mA
V
Zener Voltage
Vzr 5.5 8.0
Izr=5mA
Remark : forward means M2 postive voltage & M1 Ground
6. Annotation:
6-1. Parallel with LED
6-2. Single pad
6-3. Double direction Zener diode protection
MOUCHIAN OPTOELECTRONIC Co.,Ltd.
Tel: 886-3-5647136
Fax:886-3-5647180
Jan.2008