Test

1. 1Rectifier Device Data
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
• Extremely Low vF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 1000 per bag.
• Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to the
part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: 1N5817, 1N5818, 1N5819
MAXIMUM RATINGS
Rating Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20 30 40 V
Non–Repetitive Peak Reverse Voltage VRSM 24 36 48 V
RMS Reverse Voltage VR(RMS) 14 21 28 V
Average Rectified Forward Current (2)
(VR(equiv) ≤ 0.2 VR(dc), TL = 90°C,
RθJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C)
IO 1.0 A
Ambient Temperature (Rated VR(dc), PF(AV) = 0, RθJA = 80°C/W) TA 85 80 75 °C
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, half–wave, single phase 60 Hz,
TL = 70°C)
IFSM 25 (for one cycle) A
Operating and Storage Junction Temperature Range (Reverse Voltage applied) TJ, Tstg –65 to +125 °C
Peak Operating Junction Temperature (Forward Current applied) TJ(pk) 150 °C
THERMAL CHARACTERISTICS (2)
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RθJA 80 °C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic Symbol 1N5817 1N5818 1N5819 Unit
Maximum Instantaneous Forward Voltage (1) (iF = 0.1 A)
(iF = 1.0 A)
(iF = 3.0 A)
vF 0.32
0.45
0.75
0.33
0.55
0.875
0.34
0.6
0.9
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1) (TL = 25°C)
(TL = 100°C)
IR 1.0
10
1.0
10
1.0
10
mA
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
Preferred devices are Motorola recommended choices for future use and best overall value.
© Motorola, Inc. 1996
Order this document
by 1N5817/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
1N5817
1N5818
1N5819
SCHOTTKY BARRIER
RECTIFIERS
1 AMPERE
20, 30 and 40 VOLTS
CASE 59–04
1N5817 and 1N5819 are
Motorola Preferred Devices
Rev 3

2. 125
115
105
95
85
75
2015107.05.04.03.02.0
TR,REFERENCETEMPERATURE(
°
C)
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 1. Maximum Reference Temperature
1N5817
40 30 23
60
80
RθJA (°C/W) = 110
125
115
105
95
85
75
2015107.05.0 304.03.0
40 30 23
RθJA (°C/W) = 110
80
60
Figure 2. Maximum Reference Temperature
1N5818
125
115
105
95
85
75
2015107.05.0 304.0 40
RθJA (°C/W) = 110
60
80
Figure 3. Maximum Reference Temperature
1N5819
Circuit
Load
Half Wave
Resistive Capacitive*
Full Wave, Bridge
Resistive Capacitive
Full Wave, Center Tapped*†
Resistive Capacitive
Sine Wave
Square Wave
0.5
0.75
1.3
1.5
0.5
0.75
0.65
0.75
1.0
1.5
1.3
1.5
40
30
23
TR,REFERENCETEMPERATURE(C)
°
VR, DC REVERSE VOLTAGE (VOLTS)
VR, DC REVERSE VOLTAGE (VOLTS)
*Note that VR(PK) ≈ 2.0 Vin(PK). †Use line to center tap voltage for Vin.
Table 1. Values for Factor F
TR,REFERENCETEMPERATURE(
°
C)
1N5817 1N5818 1N5819
2 Rectifier Device Data
NOTE 1 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this rectifier at reverse voltages
above 0.1 VRWM. Proper derating may be accomplished by use of
equation (1).
TA(max) =
where TA(max) =
TJ(max) =
PF(AV) =
PR(AV) =
RθJA =
TJ(max) – RθJAPF(AV) – RθJAPR(AV)
Maximum allowable ambient temperature
Maximum allowable junction temperature
(1)
Average forward power dissipation
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)
Average reverse power dissipation
Junction–to–ambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by taking re-
verse power dissipation and thermal runaway into consideration. The
figures solve for a reference temperature as determined by equation
(2).
TR = TJ(max) – RθJAPR(AV) (2)
Substituting equation (2) into equation (1) yields:
TA(max) = TR – RθJAPF(AV) (3)
Inspection of equations (2) and (3) reveals that TR is the ambient
temperature at which thermal runaway occurs or where TJ = 125°C,
when forward power is zero. The transition from one boundary condi-
tion to the other is evident on the curves of Figures 1, 2, and 3 as a
differencein the rate of change of the slope in the vicinity of 115°C. The
dataof Figures 1, 2, and 3 is based upon dc conditions. For use in com-
mon rectifier circuits, Table 1 indicates suggested factors for an equiv-
alent dc voltage to use for conservative design, that is:
(4)VR(equiv) = Vin(PK) x F
The factor F is derived by considering the properties of the various rec-
tifier circuits and the reverse characteristics of Schottky diodes.
EXAMPLE:FindTA(max)for1N5818operatedina12–voltdcsupply
usingabridgecircuitwithcapacitivefiltersuchthatIDC=0.4A(IF(AV)=
0.5 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RθJA = 80°C/W.
Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
Step 1. Find ∴ VR(equiv) = (1.41)(10)(0.65) = 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 109°C
Step 1. Find @ VR = 9.2 V and RθJA = 80°C/W.
Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W
@
I(FM)
I(AV)
= 10 and IF(AV) = 0.5 A.
Step 4. Find TA(max) from equation (3).
Step 4. Find TA(max) = 109 – (80) (0.5) = 69°C.
**Values given are for the 1N5818. Power is slightly lower for the
1N5817 because of its lower forward voltage, and higher for the
1N5819.

3. 1N5817 1N5818 1N5819
3Rectifier Device Data
7/8
20
40
50
90
80
70
60
30
10
3/45/81/23/81/4 1.01/81
RθJL,THERMALRESISTANCE,JUNCTION–TO–LEAD(°C/W)
BOTH LEADS TO HEATSINK,
EQUAL LENGTH
MAXIMUM
TYPICAL
L, LEAD LENGTH (INCHES)
Figure 4. Steady–State Thermal Resistance
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
4.02.01.00.80.60.40.2
PF(AV),AVERAGEPOWERDISSIPATION(WATTS)
IF(AV), AVERAGE FORWARD CURRENT (AMP)
dc
SQUARE WAVE
TJ ≈ 125°C
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
10k2.0k1.0k5002001005020105.02.01.00.50.20.1 5.0k
r(t),TRANSIENTTHERMALRESISTANCE(NORMALIZED)
ZθJL(t) = ZθJL • r(t)
Ppk Ppk
tp
t1
TIME
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
∆TJL = Ppk • RθJL [D + (1 – D) • r(t1 + tp) + r(tp) – r(t1)]
where
∆TJL = the increase in junction temperature above the lead temperature
r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.:
r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp.
t, TIME (ms)
NOTE 2 — MOUNTING DATA
Data shown for thermal resistance junction–to–ambient (RθJA) for
the mountings shown is to be used as typical guideline values for pre-
liminary engineering, or in case the tie point temperature cannot be
measured.
TYPICAL VALUES FOR RθJA IN STILL AIR
Mounting
Method 1/8 1/4 1/2 3/4
Lead Length, L (in)
RθJA
1
2
3
52
67
65
80
72
87
85
100
°C/W
°C/W
°C/W50
Mounting Method 1
P.C. Board with
1–1/2″ x 1–1/2″
copper surface.
Mounting Method 3
P.C. Board with
1–1/2″ x 1–1/2″
copper surface.
L L
L = 3/8″
BOARD GROUND
PLANE
VECTOR PIN MOUNTING
L L
Mounting Method 2
5
10
20
Sine Wave
I(FM)
I(AV)
= π (Resistive Load)
Capacitive
Loads {
Figure 5. Forward Power Dissipation
1N5817–19
Figure 6. Thermal Response

4. 1N5817 1N5818 1N5819
4 Rectifier Device Data
100705.0
125
115
105
95
85
75
207.0 103.02.0 301.0 40
15
5.0
3.0
2.0
0.3
0.2
0.1
403612
30
20
1.0
0.5
0.05
0.03
2416 208.04.0 280 32
10
20
7.0
5.0
2.0
0.2
0.3
0.5
0.7
1.0
3.0
0.9 1.0 1.1
0.1
0.07
0.05
0.03
0.02
0.60.50.40.30.2 0.70.1 0.8
NOTE 3 — THERMAL CIRCUIT MODEL
(For heat conduction through the leads)
TA(A) TA(K)
RθS(A) RθL(A) RθJ(A) RθJ(K) RθL(K) RθS(K)
PD
TL(A) TC(A) TJ TC(K) TL(K)
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
iF,INSTANTANEOUSFORWARDCURRENT(AMP)
Figure 7. Typical Forward Voltage
IFSM,PEAKSURGECURRENT(AMP)
NUMBER OF CYCLES
Figure 8. Maximum Non–Repetitive Surge Current
IR,REVERSECURRENT(mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Typical Reverse Current
TC = 100°C
25°C
1 Cycle
TL = 70°C
f = 60 Hz
Surge Applied at
Rated Load Conditions
1N5817
1N5818
1N5819
TJ = 125°C
100°C
25°C
Use of the above model permits junction to lead thermal resistance
for any mounting configuration to be found. For a given total lead
length, lowest values occur when one side of the rectifier is brought
as close as possible to the heatsink. Terms in the model signify:
TA = Ambient Temperature TC = Case Temperature
TL = Lead Temperature TJ = Junction Temperature
RθS = Thermal Resistance, Heatsink to Ambient
RθL = Thermal Resistance, Lead to Heatsink
RθJ = Thermal Resistance, Junction to Case
PD = Power Dissipation
(Subscripts A and K refer to anode and cathode sides, respectively.)
Values for thermal resistance components are:
RθL = 100°C/W/in typically and 120°C/W/in maximum
RθJ = 36°C/W typically and 46°C/W maximum.
75°C

5. 1N5817 1N5818 1N5819
5Rectifier Device Data
NOTE 4 — HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of majority carri-
er conduction, it is not subject to junction diode forward and reverse re-
covery transients due to minority carrier injection and stored charge.
Satisfactory circuit analysis work may be performed by using a model
consistingof an ideal diode in parallel with a variable capacitance. (See
Figure 10.)
Rectification efficiency measurements show that operation will be
satisfactory up to several megahertz. For example, relative waveform
rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the
ratio of dc power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine wave inputs.
However, in contrast to ordinary junction diodes, the loss in waveform
efficiency is not indicative of power loss: it is simply a result of reverse
current flow through the diode capacitance, which lowers the dc output
voltage.
10 200.8
70
200
100
50
30
20
10
6.04.02.01.00.6 8.00.4 40
C,CAPACITANCE(pF)
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance
TJ = 25°C
f = 1.0 MHz
1N5819
1N5818
1N5817

6. 1N5817 1N5818 1N5819
6 Rectifier Device Data
PACKAGE DIMENSIONS
ISSUE M
CASE 59–04
K
A
D
K
B
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 5.97 6.60 0.235 0.260
B 2.79 3.05 0.110 0.120
D 0.76 0.86 0.030 0.034
K 27.94 ––– 1.100 –––
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO–41 OUTLINE SHALL APPLY.
2. POLARITY DENOTED BY CATHODE BAND.
3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
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