Comparison of the Characteristics of Thin-Film Transistors (TFTs)

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This document compares the characteristics of different types of thin-film transistors (TFTs). It discusses TFTs made of materials like copper tin sulfide, copper oxide, amorphous copper-tin-sulfur-gallium oxide, tin oxide, gadolinium and lithium alloyed zinc oxide, and indium zinc tin oxide. These TFTs were fabricated using various solution-processed and deposition methods and showed high performance and stability. The document provides references to journal articles that evaluate the electrical properties and performance of these various organic TFT materials and device structures.

Comparison of the Characteristics of Thin-
Film Transistors (TFTs)
Mariana Amorim Fraga

Comparison of the Characteristics of Thin-Film Transistors (TFTs)
https://www.orkg.org/orkg/comparison/R145556

Visualization 1
https://www.orkg.org/orkg/comparison/R145556

Visualization 2
https://www.orkg.org/orkg/comparison/R145556

References
Mude, Narendra Naik, Ravindra Naik Bukke, and Jin Jang. “Solution-Processed High-Performance p-Channel Copper Tin Sulfide Thin-Film
Transistors.” Journal of Materials Chemistry C 9, no. 29 (2021): 9188–9196. doi:10.1039/d1tc01575c.
Napari, Mari, Tahmida N. Huq, David J. Meeth, Mikko J. Heikkilä, Kham M. Niang, Han Wang, Tomi Iivonen, et al. “Role of ALD Al2O3 Surface
Passivation on the Performance of p-Type Cu2O Thin Film Transistors.” ACS Applied Materials & Interfaces 13, no. 3 (January 14, 2021): 4156–4164.
doi:10.1021/acsami.0c18915.
Mude, Narendra Naik, Ravindra Naik Bukke, and Jin Jang. “High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium
Oxide Thin-Film Transistors by UV/O3 Photocuring.” ACS Applied Materials & Interfaces 13, no. 17 (April 23, 2021): 20277–20287.
doi:10.1021/acsami.0c21979.
Shang, Z. W., J. Ma, W. D. Liu, Y. C. Fan, H. H. Hsu, Z. W. Zheng, and C. H. Cheng. “Performance Investigation of an n-Type Tin-Oxide Thin Film
Transistor by Channel Plasma Processing.” IEEE Journal of the Electron Devices Society 8 (2020): 485–489. doi:10.1109/jeds.2020.2986172.
Saha, Jewel Kumer, Ravindra Naik Bukke, and Jin Jang. “Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray
Pyrolysis.” Advanced Electronic Materials 6, no. 12 (November 5, 2020): 2000594. doi:10.1002/aelm.202000594.
Do, Youngbin, Duk Young Jeong, Suhui Lee, Seongbok Kang, Seonhyang Jang, and Jin Jang. “Remarkable Improvement in Foldability of Poly‐Si
Thin‐Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Poly‐Si Thin‐Film
Transistor Used for Foldable Displays.” Advanced Engineering Materials 22, no. 5 (March 2020): 1901430. doi:10.1002/adem.201901430.
Mude, Narendra Naik, Ravindra Naik Bukke, Jewel Kumer Saha, Christophe Avis, and Jin Jang. “Highly Stable, Solution‐Processed Ga‐Doped IZTO
Thin Film Transistor by Ar/O2 Plasma Treatment". Advanced Electronic Materials 5, no. 12 (September 25, 2019): 1900768.
doi:10.1002/aelm.201900768.

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Comparison of the Characteristics of Thin-Film Transistors (TFTs)

1. Comparison of the Characteristics of Thin- Film Transistors (TFTs) Mariana Amorim Fraga

2. Comparison of the Characteristics of Thin-Film Transistors (TFTs) https://www.orkg.org/orkg/comparison/R145556

3. Visualization 1 https://www.orkg.org/orkg/comparison/R145556

4. Visualization 2 https://www.orkg.org/orkg/comparison/R145556

5. References Mude, Narendra Naik, Ravindra Naik Bukke, and Jin Jang. “Solution-Processed High-Performance p-Channel Copper Tin Sulfide Thin-Film Transistors.” Journal of Materials Chemistry C 9, no. 29 (2021): 9188–9196. doi:10.1039/d1tc01575c. Napari, Mari, Tahmida N. Huq, David J. Meeth, Mikko J. Heikkilä, Kham M. Niang, Han Wang, Tomi Iivonen, et al. “Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors.” ACS Applied Materials & Interfaces 13, no. 3 (January 14, 2021): 4156–4164. doi:10.1021/acsami.0c18915. Mude, Narendra Naik, Ravindra Naik Bukke, and Jin Jang. “High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O3 Photocuring.” ACS Applied Materials & Interfaces 13, no. 17 (April 23, 2021): 20277–20287. doi:10.1021/acsami.0c21979. Shang, Z. W., J. Ma, W. D. Liu, Y. C. Fan, H. H. Hsu, Z. W. Zheng, and C. H. Cheng. “Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing.” IEEE Journal of the Electron Devices Society 8 (2020): 485–489. doi:10.1109/jeds.2020.2986172. Saha, Jewel Kumer, Ravindra Naik Bukke, and Jin Jang. “Extremely Stable, High Performance Gd and Li Alloyed ZnO Thin Film Transistor by Spray Pyrolysis.” Advanced Electronic Materials 6, no. 12 (November 5, 2020): 2000594. doi:10.1002/aelm.202000594. Do, Youngbin, Duk Young Jeong, Suhui Lee, Seongbok Kang, Seonhyang Jang, and Jin Jang. “Remarkable Improvement in Foldability of Poly‐Si Thin‐Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Poly‐Si Thin‐Film Transistor Used for Foldable Displays.” Advanced Engineering Materials 22, no. 5 (March 2020): 1901430. doi:10.1002/adem.201901430. Mude, Narendra Naik, Ravindra Naik Bukke, Jewel Kumer Saha, Christophe Avis, and Jin Jang. “Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O2 Plasma Treatment". Advanced Electronic Materials 5, no. 12 (September 25, 2019): 1900768. doi:10.1002/aelm.201900768.

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Comparison of the Characteristics of Thin-Film Transistors (TFTs)