This document describes the process of simulating a 1.8 micron n-channel MOSFET using a 2D device simulator. It specifies the device geometry and material properties, generates numerical grids, defines impurity profiles, selects physical models, and solves the device equations at different bias conditions. The simulations are performed to calculate the output characteristics of the MOSFET for different gate voltages in order to analyze the device performance.

1. Page 1 of 3/Users/Ricardillo/Google Drive/Do…/EE 129D/New folder/1_5umNMOS.txt
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Copyright 2016 Richard A Gaona1
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TITLE 1.8 Micron N-Channel MOSFET3
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COMMENT Specify a rectangular mesh5
MESH SMOOTH=16
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COMMENT width is 4 micron decreasing H increases mesh res8
X.MESH WIDTH=4.0 H1=0.06259
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COMMENT oxide thickness11
Y.MESH N=1 L=-0.02512
Y.MESH N=3 L=0.013
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COMMENT substrate thickness and relative mesh res15
Y.MESH DEPTH=1.0 H1=0.12516
Y.MESH DEPTH=1.0 H1=0.25017
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COMMENT Eliminate some unnecessary substrate nodes19
ELIMIN COLUMNS Y.MIN=1.120
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COMMENT Increase source/drain oxide thickness using SPREAD22
SPREAD LEFT WIDTH=0.9 UP=1 LO=3 THICK=.1 ENC=223
SPREAD RIGHT WIDTH=0.9 UP=1 LO=3 THICK=.1 ENC=224
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COMMENT Use SPREAD again to prevent substrate grid distortion26
SPREAD LEFT WIDTH=100 UP=3 LO=4 Y.LO=0.12527
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COMMENT Specify oxide and silicon regions29
REGION SILICON30
REGION OXIDE IY.MAX=331
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COMMENT Electrode definition gate to spec for part 3 change gate length33
ELECTR NAME=Gate X.MIN=1.5 X.MAX=2.5 TOP34
ELECTR NAME=Substrate BOTTOM35
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COMMENT source and drain contact37
ELECTR NAME=Source X.MAX=1.09 IY.MAX=338
ELECTR NAME=Drain X.MIN=2.91 IY.MAX=339
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COMMENT Specify impurity profiles and fixed charge41
COMMENT substrate doping42
PROFILE P-TYPE N.PEAK=3E15 UNIFORM OUT.FILE=ph1nmosDS43
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COMMENT channel doping surface doping [] corresponds to y.max45

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PROFILE P-TYPE N.PEAK=3E16 Y.JUNC=.25 XY.RAT=.75 Y.MAX=046
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COMMENT source rat corresponds to lateral factor, make with wider48
PROFILE IMPURITY=AS N.PEAK=2E20 Y.JUNC=.34 X.MIN=0.0 WIDTH=.549
+ XY.RAT=2.4 Y.MAX=050
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COMMENT drain52
PROFILE IMPURITY=AS N.PEAK=2E20 Y.JUNC=.34 X.MIN=3.5 WIDTH=.553
+ XY.RAT=2.4 Y.MAX=054
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PLOT.2D GRID TITLE="n-Channel Initial Grid" FILL SCALE56
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COMMENT Regrid on doping58
REGRID DOPING LOG IGNORE=OXIDE RATIO=2 SMOOTH=159
+ IN.FILE=ph1nmosDS60
PLOT.2D GRID TITLE="n-Channel Doping Regrid" FILL SCALE61
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COMMENT Specify contact parameters for part 2 a switch the poly type63
CONTACT NAME=Gate N.POLY64
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COMMENT Specify physical models to use66
MODELS CONMOB FLDMOB SRFMOB267
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COMMENT Symbolic factorization, solve, regrid on potential69
SYMB CARRIERS=070
METHOD ICCG DAMPED71
SOLVE72
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REGRID POTEN IGNORE=OXIDE RATIO=.2 MAX=1 SMOOTH=174
+ IN.FILE=ph1nmosDS75
+ OUT.FILE=ph1nmosMS76
PLOT.2D GRID TITLE="n-Channel Potential Regrid" FILL SCALE77
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COMMENT Solve using the refined grid, save solution for later use79
SYMB CARRIERS=080
SOLVE OUT.FILE=ph1nmosS81
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COMMENT Read in simulation mesh83
MESH IN.FILE=ph1nmosMS84
COMMENT Read in saved solution85
LOAD IN.FILE=ph1nmosS86
COMMENT Use Newtonís method for the solution87
SYMB NEWTON CARRIERS=1 ELECTRONS88
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COMMENT Solve for Vds=0.1 & Vds=1.5 for part 1a90

3. Page 3 of 3/Users/Ricardillo/Google Drive/Do…/EE 129D/New folder/1_5umNMOS.txt
Saved: 7/5/16, 3:19:40 PM Printed For: Richard Gaona
+ and then ramp gate91
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SOLVE V(Drain)=0.193
LOG OUT.FILE=ph1nmos94
SOLVE V(Gate)=-.5 ELEC=Gate VSTEP=.2 NSTEP=1095
COMMENT Plot Ids vs. Vgs96
PLOT.1D Y.AXIS=I(Drain) X.AXIS=V(Gate) POINTS COLOR=297
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extract mos.param99
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