The document presents a bidirectional intelligent semiconductor transformer (BIST). The BIST consists of high voltage and low voltage parts connected by a high frequency transformer. It uses IGBTs and MOSFETs to boost the input voltage, which is then rectified and regulated before being inverted and output. The BIST provides bidirectional power flow, small size, voltage sag correction, and power quality improvements for smart grids. It allows input-output isolation with greater transmission efficiency compared to conventional transformers.

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Presented by:
PRANAV S
E7B
Roll No: 7834

2. BIDIRECTIONAL INTELLIGENT SEMICONDUCTOR TRANSFORMER
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INTRODUCTION
FEATURES
MODE OF OPERATION
CIRCUITS AND WAVE FORMS
CONCLUSION
REFERENCES

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OBJECTIVE
To provide better power quality.
To improve efficiency of transmission system
To eliminate voltage sag and swell
To provide powerfactor correction

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INTRODUCTION
•Smart grid is one which meets the greater demand of
power quality distribution automation in the current
power utilization scenario
•Conventional transformers do not satisfy the
requirements of modern smart grid innovation
•This inturn necessitates the use of an advanced power
transforming technology
•This is made possible through power electronic devices
creating an advanced technology known as BIST
(Bidirectional Intelligent semiconductor Transformer)

5. BIDIRECTIONAL INTELLIGENT SEMICONDUCTOR TRANSFORMER 5
 Input-to-output isolation with a high-
frequency transformer
 Bidirectional power flow
Small size and light weight
 Capability of compensating voltage sag/or
swell
 Realization of three-phase structure based on
single-phase module.
FEATURES OF BIST

6. High voltage part
High-voltage high-frequency ac/dc converter
Low voltage part
Bidirectional low-voltage dc/dc converter
Hybrid-switching dc/ac inverter
BIDIRECTIONAL INTELLIGENT SEMICONDUCTOR TRANSFORMER
6Fig 1

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HIGH-VOLTAGE PART
• The frequency of HV AC supply is increased to higher
level by proper gating of IGBT
• This can be further step down using a small
and light weight transformer
• This voltage is then rectified into pulsating dc
• All the above processes can be done in four modes
(A,B,C,D) of which two are in forward direction and
two are in reverse direction

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BIDIRECTIONAL HIGH-FREQUENCY AC/DC
CONVERTER(HIGH-VOLTAGE PART )
Fig 2

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TRANSFORMER
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MODE A OPERATION
Fig 3
Fig 4

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MODE B OPERATION
At first instant M2 turns on.
At next instant M4 turns on.
Fig 5

11. BIDIRECTIONAL INTELLIGENT SEMICONDUCTOR
TRANSFORMER
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CURRENT PATH FOR EACH OPERATION MODE IN THE AC/DC
RECTIFIER
MODEA
MODEB
MODEC
MODED
Fig 5

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LOW-VOLTAGE PART
 Consist of two parts
1.Dc-Dc converter
converts 320VDC into fixed 700VDC
2.Dc-Ac inverter
converts 700VDC into 320VAC
 The output voltage remains constant .
 Eliminate counter emf effect by using diodes

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OUTPUT
LOW VOLTAGE PART (CIRCUIT)
Fig 9
M1
M2
M3
M4

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VOLTAGE AND CURRENT CONTROL
Fig 10

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To reduce high frequency switching loss MOSFET is
connected Parallel to IGBT
MOSFET and IGBT provides hybrid switching
Diode provides protection for MOSFET
GATING METHOD

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GATING METHOD CIRCUIT
Fig 11

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VOLTAGE AND CURRENT WAVEFORMS
DURING NORMAL OPERATION

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SEMICONDUCTOR TRANSFORMER 18
 current increases.
 Dc link voltage constant.
 Output voltage remains constant
DURING SAG

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VOLTAGE AND CURRENT WAVEFORMS DURING
SAG

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HARDWARE STRUCTURE OF BIST

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FEATURES OF BIST

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MERITS
 Bi directional powerflow
 less space and light weight
 Reduces the cost ,increases the transmission efficiency
compared to existing system
 Better power quality
 Environmental Concerns

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CONCLUSION
The working based on power electronic devices like
IGBT,MOSFET.
It posses input to output isolation causing a great solution
to powerfactor problems.
Can be implemented on 3phase system by simultaneously
using 3 units..
Have wide range of applications were light weight is
required
Reduces voltage sag and swell

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REFERENCES
4.S. Falcones, R. Ayyanar, and X. Mao, “A DC–DC multiport-converter- based solid-state
transformer integrating distributed generation and storage,” IEEE Trans. Power
Electron., vol. 28, no. 5, pp. 2191–2203, May 2013.
1. Byung-Moon Han,Nam-Sup Choi,Jun-Young Lee,”New Bidirectional Intelligent
Transformer for Smart Grid Applications,”IEEE Trans. Power Electron., vol.
29, no. 8, pp. 4058-4066, Aug. 2014.
2 “Feasibility assessment for intelligent universal transformer,” EPRI, Palo Alto,
CA, USA, EPRI Rep. TR-1001698, Dec. 2008.
3 ” Single-Phase Single-Stage Bidirectional Isolated ZVS AC-DC Converter with
PFC” 15th International Power Electronics and Motion Control
Conference,EPE- PEMC 2012 ECCE Europe, Novi Sad, Serbia

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