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Rm.naatchammai vlsi paper ppt
1. NANO-SCALE DOUBLE-GATE
MOSFETS IN LOW POWER
TUNABLE CURRENT MODE
Presented by
RM.Naatchammai,V.P.M.M.Engineering College
C.Rajalakshmi ,V.P.M.M.Engineering College
2. ROUTE MAP
Source Tunable current mirrors
Tunable current amplifiers
Current-mode integrator
Destination
A Vision of the Future
3. 3
SOI โ The technology of the future.
Highlights
โข Reduced junction capacitance.
โข Absence of latchup.
โข Ease in scaling (buried oxide need not
be scaled).
โข Compatible with conventional Silicon
processing.
โข Sometimes requires fewer steps to
fabricate.
โข Reduced leakage.
โข Improvement in the soft error rate.
Welcome to the world of Silicon On Insulator
Drawbacks
โข Drain Current Overshoot.
โข Kink effect
โข Thickness control (fully
depleted operation).
โข Surface states.
4. Why New Transistor Structures?
โข Off-state leakage (IOFF) must be suppressed as Lgis scaled down
โ allows for reductions in VT and hence VDD
โข Leakage occurs in the region away from the channel surface
๏ Letโs get rid of it!
DrainSource
Gate
Lg
Thin-Body
MOSFET:
Buried Oxide
Source Drain
Gate
Substrate
โSilicon-on-
Insulatorโ (SOI)
Wafer
5. Thin-Body MOSFETs
โข IOFF is suppressed by using an adequately thin body region.
โ Body doping can be eliminated
๏ higher drive current due to higher carrier mobility
Ultra-Thin Body (UTB)
Buried Oxide
Substrate
Source Drain
Gate
TSi
Lg
TSi < (1/4) ร Lg
Double-Gate (DG)
Gate
Source Drain
Gate
TSi
TSi < (2/3) ร Lg
7. Effect of TSi on OFF-state Leakage
IOFF = 19 ยตA/ยตmIOFF = 2.1 nA/ยตm
Leakage Current
Density [A/cm2
]
@ VDS = 0.7 V
106
10-1
3x102
0.0
4.0
8.0
12.0
16.0
20.0
G
G
S D
G
G
S D
Si Thickness [nm]
Lg = 25 nm; tox,eq = 12ร
TSi = 10 nm TSi = 20 nm
9. Double-Gate FinFET
โข Self-aligned gates straddle narrow silicon fin
โข Current flows parallel to wafer surface
Source
Drain
Gate 2Gate 2
Fin Width Wfin = TSi
Fin Height Hfin = W
Gate Length = Lg
Current
Flow
Gate 1Gate 1
GG
GG
S
D
10. Concept of Current Mirror
โข The motivation behind a current mirror is to
sense the current from a โgolden current sourceโ
and duplicate this โgolden currentโ to other
locations.
11. Bulk FinFET (Samsung Electronics)
โข FinFETs can be made
on bulk-Si wafers
๏ผlower cost
๏ผimproved thermal
conduction
โข 90 nm Lg FinFETs
demonstrated
โข Wfin = 80 nm
โข Hfin = 100 nm
DIBL = 25 mV
12. Current Gain (h21) & Unilateral Power Gain (UMax)
๏ผIdentical behavior for the FinFET and TriGate
transistors.
๏ผTriGate performance again superior to the
FinFET.
๏ผOverall device performance better than that of a
planar MOSFET !!
Legend
โข ๏ Current Gain
๏ ๏ Unilateral Power
Gain
Gate Bias = 0.8 Volts
FinFETFinFET
TriGaTriGa
tete
FinFETFinFET TriGateTriGate
FinFETFinFET
TriGateTriGate
13. CMOS Current Mirror
โข The idea of combining NMOS and PMOS to
produce CMOS current mirror is shown above.
16. 16
IBMs FinFET / Double-Gate SOI (Nanoscale Device Research
Group)
17. Device Structural Variations (Channel Doping)
โข Near identical behavior in both graphs.
โข Channel doping normally maintained at a low value to
minimize effects of scattering.
โข Mobility degradation observed at high values of channel
doping.
โข Moderate levels of channel doping could be used.
FinFET
TriGate
โฆ-Gate
Quad-Gate
Fin Height/Width = 50 nm
Gate Length = 50 nm
Workfunction = 4.6 eV
Oxide Thickness = 2 nm
Device
Dimensions
18. A Vision of the Future
Information technology will be
โข pervasive
โข embedded
โข human-centered
Philips Transportation
Health
care Disaster response
Energy
Environment
Sensatex
โข solving societal
scale problems
Infrastructural
core
The โCloudโ
The โSwarmโ
Mobile Devices
Market Growth
Better Energy Efficiency
& Functionality,
Lower Cost
Diversification of Devices & Materials
Heterogeneous
Integration
Investment
19. Conclusions and Future Work
Conclusions:
โข Successfully modeled devices in 3-dimensions.
โข Understood device design space and scaling constraints.
โข Undertook a study to understand fabrication tolerances to which
every device could be exposed.
โข Both sub-threshold and RF performance explored.
Future Work:
โข Model p-channel devices, scaling rules could differ.
โข Understand device design in totality given a variation in two or more
than two parameters.
โข Investigate their Microwave characteristics.
โข Comparison with n-channel performance for CMOS and BiCMOS
incorporation.
โข Understand effects of temperature on device performance.