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- 1. IN-LINE MONITORING OF NITRIDED GATE DIELECTRIC FILMS James Chapman Sr. Engineer, Fab Parametrics Micron Technology, Inc. Boise, ID Kwame N. Eason Key Accounts Technologist KLA-Tencor Inc. San Jose, CA
- 15. Leakage and Q tot Correlation Results N content Leakage
- 17. In-line Measured After Nitridation V tunnel V tunnel identifies the excursion Forced Excursion Double Nitridation:
- 21. Back-Up Slides
- 22. Quantox Technology Overview Corona Charge Bias, Q SILICON OXIDE High Voltage Corona Ions 1. Repeat Non-Contact Voltmeter, V surf Electronics V surf 2. Surface Photovoltage, SPV - - + + SPV LIGHT Transient Detection 3.
- 23. Q-V Sweep Parameter Extraction Inversion Accumulation C ox : Q-V slope V tunnel
- 24. Q-SPV Sweep Parameter Extraction Q total = -Q (SPV = 0)
Editor's Notes
- This is a representation of the locations in the silicon dioxide where the nitrogen will reside. This picture is not a true representation of the lattice structure, but merely a diagram of where nitrogen is located in the oxide. Hydrogen will also take places in the oxide near the interface and act as fixed charge or will also occupy locations in the interface. The size of nitrogen is much larger then oxygen and will stack at the interface like boulders next to marbles. There are spatial effects, the position of the nitrogen influences the electrical parameters, if N2 in the bulk then no charge just changes the dielectric constant at the interface changes. Hydrogen passivates the bonds. Luckily for us when N2 goes into the film it messes up the interface - we exploit that leads to COS or electrical characterization.
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