45nm transistor properties

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45nm transistor properties

  1. 1. 45nm TRANSISTOR PROPERTIES NAME : Shankardas Deepti Bharat ROLL NO. : CGB0911002 COURSE : MSc. [Engg] in VLSI System Design MODULE NAME : Integrated Circuit Analysis and Design MODULE CODE : VSD527 MODULE LEADER : Prof. Cyril Prasanna Raj P. 112/14/2011 M.S.Ramaiah school of advanced studies, Bangalore
  2. 2. Outline Introduction Processors developed in 45nm Properties Advantages Disadvantages Future Scope Conclusion References12/14/2011 M.S.Ramaiah school of advanced studies, Bangalore 2
  3. 3. Introduction The relentless drive in the semiconductor industry for smaller, faster, cheaper integrated circuits has brought the industry to the 45nm technology node. Penryn (codename), Intel’s next generation family of processors implemented in a 45nm High-k metal gate silicon process technology and designed to meet a wide range of power envelopes and market segments. In transistor design with the use of high-k and metal gate for the insulating walls and switching gates of its 45nm transistors. The 193nm immersion lithography has the wavelength of 193nm, but the medium for the light conduction is changed from air to water. Then Intel include new micro architecture . 312/14/2011 M.S.Ramaiah school of advanced studies, Bangalore
  4. 4. Processors developed in 45nm Intel Core i7 series processors, i5 750 (Lynnfield and Clarksfield). Pentium Dual-Core Wolfdale-3M are current Intel mainstream dual core sold under the Pentium brand. AMD Deneb (Phenom II) and Shanghai (Opteron) Quad-Core Processors, Regor (Athlon II) dual core processors , Caspian (Turion II) mobile dual core processors. AMD(Phenom II) "Thuban" Six-Core Processor (1055T) Xenon on Xbox 360 S model. Figure 1 45 nm Processors 4 12/14/2011 M.S.Ramaiah school of advanced studies, Bangalore
  5. 5. Properties of 45nm Source and drain regions increase hole mobility by compressing the channel, electron mobility enhancement requires tensile strain, usually applied by means of a SiN cap layer, or stress liner. With different SiN deposition conditions, stress liners can also provide additional compressive strain for hole mobility enhancement.45 nm HK + MG (a) 65 nm transistor (b) Transistor (c) 45 nm HK + MG Figure 2 65nm & 45nm transistor In 45nm technology Hafnium-based high-k + metal gate transistors are the biggest advancement in transistor technology. 512/14/2011 M.S.Ramaiah school of advanced studies, Bangalore
  6. 6. Properties Dielectric Lithography Delay Stress Enchantment Mobility Enhancement Leakage current Reliability Power consumption Speed Enhanced functionality 612/14/2011 M.S.Ramaiah school of advanced studies, Bangalore
  7. 7.  Dielectric property Replace silicon dioxide as a gate dielectric. Desirable properties Resulting reduce in leakage current Lithography Figure 3 Gate leakage vs. VDS plot Immersion effectively decreases wavelength by puttingwater between the projection lens and the silicon waferie For air, n is approximately equal to 1.0 and For water, nis approximately equal to 1.4 because water is denser thanairShorter effective wavelengths enable smaller features tobe patterned Figure 4 Ion Lithography 712/14/2011 M.S.Ramaiah school of advanced studies, Bangalore
  8. 8.  Delay 23% gate delay reduction compared to 65nm at the same Ioff and 10% lower VDD. Stress Enchantment Figure 5 Delay vs. current plot A dual-metal process with PMOS first, the stress of the NMOS gate is decoupled from the PMOS gate through optimization of the PMOS gate stack to buffer the stress The resultant transistors provide record drive current at low leakage and at tight contacted gate pitch achieving both performance and density Figure 6 Leakages in transistors benefits..12/14/2011 8 M.S.Ramaiah school of advanced studies, Bangalore
  9. 9.  Mobility Enhancement Mobility enhancement technologies (strain new channel orientations) are stepping forward to fill this requirement and are being aggressively implemented in fabrication processes. 10x lower gate insulator leakage 30% lower switching power 20% higher drive current 5x lower leakage Figure 7 S-D leakage vs. Drive current 912/14/2011 M.S.Ramaiah school of advanced studies, Bangalore
  10. 10. Advantages More computational ability Greater power efficiency Less power leakage Highest drive currents 20 percent increase in drive current or higher transistor performance, a twofold increase in transistor density, 30 percent reduction in transistor switching power and 10x reduction in gate oxide leakage power. Greater flexibility of design It reduces source-drain leakage by more than five times, thus improving the energy efficiency of the transistor12/14/2011 M.S.Ramaiah school of advanced studies, Bangalore 10
  11. 11. Disadvantages Scaling down the supply voltage Vdd of CMOS digital circuits is a straightforward technique to reduce the energy per operation Eop as its switching component Esw is quadratically reduced. Low subthreshold swing S, low DIBL effect. Low variability of subthreshold reference current (mainly from Vt variability). Gate and junction leakages, Igate and Ijunc, below the level of subthreshold leakage.12/14/2011 11 M.S.Ramaiah school of advanced studies, Bangalore
  12. 12. Future Scope Integrated with silicon infrastructure. Integration with conventional design. Comparable density and cost. To improve high-k devices for better switching characteristics 12/14/2011 M.S.Ramaiah school of advanced studies, Bangalore 12
  13. 13. Conclusion The accuracy of PTM predictions is comprehensively verified: The error of I on is below 10% for both n-channel MOS and p-channel MOS 45nm HK+MG transistors demonstrating that these devices deliver reliability comparable to conventional SiO2 Devices at ~30% higher operating fields with negligible stress-induced leakage current ( SILC) degradation. 12/14/2011 M.S.Ramaiah school of advanced studies, Bangalore 13
  14. 14. References[1] Chao, L. (2008) ‘Intel’s 45nm CMOS Technology’ Intel Technology Journal [online] 12(3). available from <http://www.intel.com/technology/itj/2008/v12i2/index.htm> [23 Oct 2011][2] Intel 45nm high-k metal gate press release (2007) Intel Demonstrates High-k + Metal Gate Transistor Breakthrough on 45nm Microprocessor [online] available from <http://www.intel.com/pressroom/kits/45nm> [21 Oct 2011]12/14/2011 M.S.Ramaiah school of advanced studies, Bangalore 14
  15. 15. THANK U12/14/2011 M.S.Ramaiah school of advanced studies, Bangalore 15

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