In this paper, we have studied the frequency modulation to intensity modulation (FM - IM) conversion property of a Fabry - Perot laser diode (FPLD) injection locked to a spectrally pure single mode master FPLD lasing at 1550.3 nm . The master FPLD is directly modulated at 5 KHz and 3 MHz which p roduces an IM - FM light wave at the output of the injected slave FPLD. The injection - locked slave FPLD possesses good amplitude limiting property which reduces the output IM by several tens of dB.
2. Chiranjib Ghosh and Taraprasad Chattopadhyay
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discriminator. The concept of FM-IM conversion in injection-locked semiconductor
laser was reported by several workers [6-7]. Later on, optical FM-IM conversion was
reported in various media such as in interferometer [8], optical fiber [9, 10], fiber
grating [11] etc. Response of slave laser diode injected by a master laser carrying
amplitude and frequency modulation has been studied by Lau and Wu [7] in 2004.
But, they have not thrown much light into the mechanism of direct frequency
modulation of the master laser in the low modulation frequency domain, particularly
below 10 MHz. It has been established that when the modulation frequency is high
(typically > 50 MHz) the frequency modulation is related with the line width
enhancement factor (LEF) as provided by Koch-Bowers’ formula [12]. But, in the low
frequency region, the thermal effect on FM generation dominates over the normal
chirping linked with amplitude-phase coupling of the master laser. This fact of direct
FM generation [13-15] should be focused in detail in calculating the optical FM-IM
conversion taking place in an injection-locked slave laser.
In this paper, we have developed a complete theory which takes the thermal effect
as well as the amplitude-phase coupling effect into consideration in the process of
direct FM generation in the master laser. We have calculated the optical FM-IM
conversion when the modulation frequency is low, typically less than 10 MHz. The
converted IM has been detected in a photodiode and the output IM index estimated.
The theory and experiment on FM-IM conversion show a good fit except for a slight
departure at higher values of input IM index.
2. ANALYSIS
The schematic circuit diagram of the FM-IM conversion experiment is shown in
Figure. 1.
Figure.1. Schematic circuit diagram for FM-IM conversion measurement
3. Efficient FM-IM Conversion in an Injection-Locked Fabry - Perot Laser Diode
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In this section, we calculate the output intensity modulation index of the slave
laser diode injection locked to an FM-IM master light wave. Four kinds of modulation
conversion are involved in the injection locking process. These are:
(i) IM to IM conversion
(ii) IM to FM conversion
(iii) FM to FM conversion, and
(iv) FM to IM conversion.
Among these, IM to FM and FM to FM conversion processes are not of interest in
this paper since the photodiode does not response to optical FM signals. The
photodiode only respond to its input intensity modulation and produces an output
current proportional to the intensity modulation. The process IM to IM conversion
injection locked diode produces negligible effect at the detector output due to
amplitude limiting property of the locked laser diode. The output IM of the locked
slave laser is several order of magnitude down [16, 17] relative to input IM. As a
result, the only modulation conversion process remaining which produces
considerable output of the photodiode is the FM to IM conversion.
In direct modulation of the laser diode, the bias current of the LD is modulated
where the modulation signal is applied to the LD through a bias tee. Direct
modulation of the LD produces both intensity modulation and frequency modulation
of the LD output.
The intensity modulation of the master LD is described as
tmItI mI sin10
(1)
Corresponding power modulation is expressed as
tmPtP mIinin sin10
(2)
where 0I is the average intensity, 0inP is the average optical power, Im is the
intensity modulation index and m is the radian frequency of intensity modulation.
The frequency shift of the master LD due to direct modulation is given by Koch-
Bowers formula [12] as
tP
t
t inln
4
(3)
where is the line width enhancement factor of the FPLD. The phase change of
the output light wave of the master LD is calculated as
dttt 2
(4)
where 00 ln
2
inP
and If mm
2
is the FM index. Here, we have assumed
tmtm mImI sinsin1ln since 1Im .
The light wave injected into the slave laser can be written as
e
tmtj
maininj
mfc
tmPtE
sin
0
0
sin1
(5)
where
tmPP mIinin sin10
(6)
4. Chiranjib Ghosh and Taraprasad Chattopadhyay
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In (5), the actual electric field is the real part of the complex representation which
is normalized so that 0
2
ininj PE . Im is the IM index.
which is related with the amplitude modulation index
2
I
a
m
m assuming 1Im .
c is the radian frequency of the injected lightwave.
The FPLDs are thermoelectric current (TEC) controller. The TEC controller
controls the temperature of the active region within 0.0020
C observed over a long
term of 24 hours. So, far as the short term effect is concerned, the active region
temperature varies in direct proportion to bias current modulation amplitude ( modI ).
As per available literature, the wavelength of InGaAs FPLD operating at 1550.3 nm
increase at the rate of Cnm
T
0
/4.0
which corresponding to a fall in LD operating
frequency of C
c
T
0
2
/
, where sec/103 8
mc is the vacuum velocity of
light. The thermal frequency shift of the FPLD is calculated as
MHzIITH modmod 99002.04.073.123 .
At low temperature below 50 MHz, thermal frequency modulation of the master
LD is the dominant effect giving rise to FM-IM conversion in the slave FPLD.
Output light wave of the injection-locked FPLD is given by in complex
representation
ttj
oout
oc
etEtE
(7)
where
tmEtE mooo sin1 (8)
Actual field is the real part of (7). om is the amplitude modulation index output so
that om2 is the output intensity modulation of the slave LD. The amplitude governing
equation [4] of the injected slave LD can be written as
dt
td
tm
tE
tEQ
ttm
tE
tE
E
tE
CC
dt
tEd
tE
Q
mf
o
inj
mf
o
inj
f
oo
o
00
0
00
2
221
0
sinsin
2
1sincos2
12
(9)
where ml
n
nC
1
1 , 212 CC , Here l is the length of the cavity, m is the
mirror loss and n is the refractive index of the active region. The active region is
made of InGsAs for lasing at1550 nm wavelength range. The injection power is much
less than the free running output power of the slave LD so that the injection locking
takes place in under driven condition. In the steady state of locking, 0
dt
dEo
and
fo EE where fE is the free running output amplitude which is normalized so that
ff PE
2
and oo PE
2
. Here, fP is the free running output power and oP is the
output power of the locked slave LD.
5. Efficient FM-IM Conversion in an Injection-Locked Fabry - Perot Laser Diode
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The output angle modulation is assumed to be of the form
tt mmav sin.0 (10)
where .av is the average phase of the output angle modulation.
For modulation frequency fmm mGHzf ,1 [3,6].
Taking
1
.0 tan,
avc (11)
where 0 is the free-running radian frequency of the LD.
Substuting (8) in (9) and equating the dc terms and coefficients of tmsin and
tmcos from both sides of (9) we get the following equations as
0cos .0 av (12)
since 0221 CC . (13)
312
21
0
0
cos
sin
xxx
xx
m
(14)
where 0
1
2
mQ
x
(15)
2
2
2
2
2
f
o
E
ECx (16)
THmf
o
inj
m
E
EQ
x
0
3
2
(17)
af mm and TH is the thermal frequency shift of the master FPLD for a
given bias current modulation amplitude ( modI ). Squaring and adding the equation
pair in (14), we get
2
2
2
1
2
32
0
xx
x
m
(18)
2
1
2
2
2
1
3
0
xx
x
m
(19)
The output IM index of the slave laser is 00 2mm I and the input IM index is
aI mm 2 assuming the IM index to be small compared with unity. Then, (19) can be
recast as
2
1
2
2
2
1
3
0
2
xx
x
m I
(20)
6. Chiranjib Ghosh and Taraprasad Chattopadhyay
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Taking 7.3n for InGaAs LD at 1550.3 nm, cavity length mml 6.0 and mirror
loss
1
10
cmm
, we get 0578.21 C and 0578.02 C . In experiment,
mWPinj 1
and
mWPf 83.4
. Assuming low-level injection (i.e; fofinj EEPP ,)
. The value of
line width enhancement factor ( ) is taken as 3.3 to LD bias current of 80 mA [18].
We have calculated Im0 as a function of Im from (20). It is poltted in fig. 2. The plot
is linear and the experimental data show a good fit with the theoretical plot at
modulation frequencies of 5 KHz and 3 MHz.
Figure. 2. Variation of output slave laser intensity modulation index resulting from FM-IM
conversion with the input master laser intensity modulation index.
3. CONCLUSION
In this paper, we have developed a self-sufficient theory of optical FM-IM conversion
in an injection-locked slave laser when the master laser is directly modulated. The low
modulation frequency region, particularly below 10 MHz is related with thermal
modulation of master laser frequency which is the dominant effect in this frequency
range. This low frequency response of the slave laser as an FM-IM converter has been
investigated experimentally and compared with the theoretical result. The theory
shows a good fit with experimental data except at high values of master laser IM
index when slight departure is noticed. The departure originates from the fact that we
7. Efficient FM-IM Conversion in an Injection-Locked Fabry - Perot Laser Diode
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have assume small alues of the master laser in e in theor . n effi ient -
on ersion has een noti e lea in to on erte in e le el 10 % at the
output of the slave laser. The injection-locked slave laser together with a photodiode
can act as an FM-IM converter-detector demodulator.
REFERENCES
[1] M. Bhattacharya and T. Chattopa h a , “ metho of eneration of opti al
si nal throu h inje tion lo kin ”, Journal of light wave Technology, vol. 6, pp.
656-660, 1998.
[2] T. Chattopadhyay and M. Bhattacharya, “Sub millimeter wave generation
through optical four wave mixing using injection-lo ke semi on u tor laser”,
Journal of light wave Technology, vol. 20, pp. 502-506, Mar 2000.
[3] T. Chattopadhyay and P. Bhattacharya, “ mplifi ation of an le-modulated
opti al si nal throu h s n hronize quantum as a e laser”, Pro ee in s of
photonics Global conference (PGCۥ10), pp. 1-4, Singapore, 2010.
[4] T. Chattopa h a an P. Bhatta har a, “Dete tion of opti al P si nals a
synchronized quantum cascade laser”, Proceedings of photonics Global
conference (PGCۥ10), pp. 1-4, Singapore, 2010.
[5] S-C. Chan and R. Diaz and J- . Lin, “No el photoni appli ations of nonlinear
semi on u tor laser nami s”, Opt. quantum Ele troni s, ol. 40, pp.83-95,
2008.
[6] T. Chattopa h a an . Bhatta har a, “ -AM conversion in injection-locked
semi on u tor lasers”, Opti s ommuni ation, ol. 163, issue- 4-6, pp. 193-197,
May 1999.
[7] E.K. Lau an .C. Wu, “ mplitu e an frequen mo ulation of the master
laser in injection-locked laser s stem”, Pro ee in s of the EEE Topi al meetin
on of Microwave photonics (MWPۥ 40), pp.142-145, 4-6 Oct. 2004.
[8] G. Ya re, “ mpro e ire t mo ulation hara teristi s of a semi on u tor laser
/ on ersion throu h an interferometer”, Journal of light wave
Technology, vol. 14, pp. 2135-2140, Mar 1996.
[9] P. Brosson, C. Ri erio an J. Ripper, “ requen emo ulation of a
semiconductor laser by FM- on ersion in an opti al fi er”, EEE Journal of
Quantum Electronics, vol. 17, issue- 5, pp. 689-693, May 1981.
[10] E.J.Bo ho e an E. . e ar alho an J.E.R. ilho, “ requen emo ulation of
a semiconductor laser by FM- on ersion in an opti al fi er”, Opti s Letters,
vol. 6, issue- 2, pp. 58-60, 1981.
[11] M. ams, E. Peral, D. Pro enz, B. arshal an . Yari , “ n rease in
semiconductor laser modulation response by FM to AM conversion in
transmission throu h fi er ratin ”, Conferen e on Lasers an Ele tro-optics
(CLEOۥ 97), vol. 11, pp. 447-448, 1997.
[12] T.L. Ko h an J.E. Bowers, “Nature of wa elen th hirpin in directly
mo ulate semi on u tor lasers”, Ele troni s Letters, ol. 20, nos. 25/26, pp.
1038-1040, Mar 2000.
[13] G. Ja o sen, H. Olesen, . Berke hal an B. Troms ar , “Current/frequen
modulation characteristics for directly optical frequency modulated injection
lasers at 830 nm an 1.3 µm”, Ele troni s letters, ol. 18, pp. 874-876, 1982.
[14] D. Welfor an S.B. le an er, “ a nitu e an phase hara teristi s of
frequency modulation in direct modulate Ga l s semi on u tor io e lasers”,
J. Lightwave Technology, vol. LT-3, pp. 1092-1099, 1985.
8. Chiranjib Ghosh and Taraprasad Chattopadhyay
http://www.iaeme.com/IJECET/index.asp 40 editor@iaeme.com
[15] S. Ka a ashi, Y. Yamamoto, . to an K. Kimura, “Dire t frequen
mo ulation in lGa s semi on u tor lasers ”, EEE Journal of Quantum
Electronics, vol. 18, issue- 4, pp. 582-595, 1982.
[16] . ra kos, . Bo ris, D. S ri is an R. Rhelan, “ mplitu e noise limitin
amplifier for phase encoded signals using injection locking in semiconductor
laser”, Journal of li htwa e Te hnolo , ol. 30, issue- 5, pp. 764-771, 2012.
[17] T.Chattopa h a an P. Bhatta har a, “Hi her or er nonlinearit an
synchronization of Quantum cascade lasers”, Optoelectronics Letters, vol. 7, no.
3, pp. 186-190, June 2011.
[18] T. Chattopa h a an P. Bhatta har a an C. Ghosh, “Linewi th enhan ement
fa tor measurement of a laser io e throu h narrow an opti al eneration”,
Journal of optical communications, (in press), DOI No.10.1515/joc-2015-0022,
Nov–2015.