ON MODEL OF MANUFACTURING OF A BAND-PASS FILTER TO INCREASE INTEGRATION RATE OF FIELD-EFFECT HETEROTRANSISTORS

Advanced Nanoscience and Technology: An International Journal (ANTJ), Vol. 9, No.2/3/4, December 2023
DOI: 10.5121/antj.2023.9402 1
ON MODEL OF MANUFACTURING OF A BAND-PASS
FILTER TO INCREASE INTEGRATION RATE OF
FIELD-EFFECT HETEROTRANSISTORS
Evgeny L. Pankratov
Nizhny Novgorod State University, 23 Gagarin avenue,
Nizhny Novgorod, 603950, Russia
ABSTRACT
In this paper we introduce an approach to increase integration rate of field-effect heterotransistors in the
framework of band-pass filter. In the framework of the approach we consider a heterostructure with spe-
cial configuration. Several specific areas of the heterostructure should be doped by diffusion or ion im-
plantation. Annealing of dopant and/or radiation defects should be optimized.
KEYWORDS
heterotransistors; band-pass filter; optimization of manufacturing; analytical approach for prognosis
1. INTRODUCTION
An actual and intensively solving problems of solid state electronics is increasing of integration
rate of elements of integrated circuits (p-n-junctions, their systems et al) [1-8]. Increasing of the
integration rate leads to necessity to decrease their dimensions. To decrease the dimensions are
using several approaches. They are widely using laser and microwave types of annealing of in-
fused dopants. These types of annealing are also widely using for annealing of radiation defects,
generated during ion implantation [9-17]. Using the approaches gives a possibility to increase
integration rate of elements of integrated circuits through inhomogeneity of technological param-
eters due to generating inhomogenous distribution of temperature. In this situation one can obtain
decreasing dimensions of elements of integrated circuits [18] with account Arrhenius law [1,3].
Another approach to manufacture elements of integrated circuits with smaller dimensions is dop-
ing of heterostructure by diffusion or ion implantation [1-3]. However in this case optimization of
dopant and/or radiation defects is required [18].
In this paper we consider a heterostructure. The heterostructure consist of a substrate and several
epitaxial layers. Some sections have been manufactured in the epitaxial layers. Further we con-
sider doping of these sections by diffusion or ion implantation. The doping gives a possibility to
manufacture field-effect heterotransistors framework a band-pass filter so as it is shown on Figs.
1. The manufacturing gives a possibility to increase density of elements of the integrator circuit.
After the considered doping dopant and/or radiation defects should be annealed. Framework the
paper we analyzed dynamics of redistribution of dopant and/or radiation defects during their an-
nealing. We introduce an approach to decrease dimensions of the element. However it is neces-
sary to complicate technological process.

2
Fig. 1. The considered band-pass filter
2. METHOD OF SOLUTION
In this section we determine spatio-temporal distributions of concentrations of infused and im-
planted dopants. To determine these distributions we calculate appropriate solutions of the second
Fick's law [1,3,18]
       





















z
t
z
y
x
C
D
z
y
t
z
y
x
C
D
y
x
t
z
y
x
C
D
x
t
t
z
y
x
C
C
C
C













 ,
,
,
,
,
,
,
,
,
,
,
,
.(1)
Boundary and initial conditions for the equations are
  0
,
,
,
0




x
x
t
z
y
x
C
,
  0
,
,
,



 x
L
x
x
t
z
y
x
C
,
  0
,
,
,
0




y
y
t
z
y
x
C
,
  0
,
,
,



 y
L
x
y
t
z
y
x
C
,
  0
,
,
,
0




z
z
t
z
y
x
C
,
  0
,
,
,



 z
L
x
z
t
z
y
x
C
, C(x,y,z,0)=f (x,y,z). (2)
The function C(x,y,z,t) describes the spatio-temporal distribution of concentration of dopant; T is
the temperature of annealing; DС is the dopant diffusion coefficient. Value of dopant diffusion
coefficient could be changed with changing materials of heterostructure, with changing tempera-
ture of materials (including annealing), with changing concentrations of dopant and radiation de-

3
fects. We approximate dependences of dopant diffusion coefficient on parameters by the follow-
ing relation with account results in Refs. [20-22]
   
 
   
  
















 2
*
2
2
*
1
,
,
,
,
,
,
1
,
,
,
,
,
,
1
,
,
,
V
t
z
y
x
V
V
t
z
y
x
V
T
z
y
x
P
t
z
y
x
C
T
z
y
x
D
D L
C 

 

. (3)
Here the function DL (x,y,z,T) describes the spatial (in heterostructure) and temperature (due to
Arrhenius law) dependences of diffusion coefficient of dopant. The function P (x,y,z,T) describes
the limit of solubility of dopant. Parameter  [1,3] describes average quantity of charged defects
interacted with atom of dopant [20]. The function V (x,y,z,t) describes the spatio-temporal distri-
bution of concentration of radiation vacancies. Parameter V*
describes the equilibrium distribu-
tion of concentration of vacancies. The considered concentrational dependence of dopant diffu-
sion coefficient has been described in details in [20]. It should be noted, that using diffusion type
of doping did not generation radiation defects. In this situation 1= 2= 0. We determine spatio-
temporal distributions of concentrations of radiation defects by solving the following system of
equations [21,22]
            

























T
z
y
x
k
y
t
z
y
x
I
T
z
y
x
D
y
x
t
z
y
x
I
T
z
y
x
D
x
t
t
z
y
x
I
I
I
I
I ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
           
t
z
y
x
V
t
z
y
x
I
T
z
y
x
k
z
t
z
y
x
I
T
z
y
x
D
z
t
z
y
x
I V
I
I ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, ,
2












 (4)
            

























T
z
y
x
k
y
t
z
y
x
V
T
z
y
x
D
y
x
t
z
y
x
V
T
z
y
x
D
x
t
t
z
y
x
V
V
V
V
V ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
           
t
z
y
x
V
t
z
y
x
I
T
z
y
x
k
z
t
z
y
x
V
T
z
y
x
D
z
t
z
y
x
V V
I
V ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, ,
2












 .
Boundary and initial conditions for these equations are
  0
,
,
,
0




x
x
t
z
y
x

,
  0
,
,
,



 x
L
x
x
t
z
y
x

,
  0
,
,
,
0




y
y
t
z
y
x

,
  0
,
,
,



 y
L
y
y
t
z
y
x

,
  0
,
,
,
0




z
z
t
z
y
x

,
  0
,
,
,



 z
L
z
z
t
z
y
x

,  (x,y,z,0)=f (x,y,z). (5)
Here  =I,V. The function I (x,y,z,t) describes the spatio-temporal distribution of concentration of
radiation interstitials; D(x,y,z,T) are the diffusion coefficients of point radiation defects; terms
V2
(x,y,z,t) and I2
(x,y,z,t) correspond to generation divacancies and diinterstitials; kI,V(x,y,z,T) is the
parameter of recombination of point radiation defects; kI,I(x,y,z,T) and kV,V(x,y,z,T) are the pa-
rameters of generation of simplest complexes of point radiation defects.
Further we determine distributions in space and time of concentrations of divacancies V(x,y,z,t)
and diinterstitials I(x,y,z,t) by solving the following system of equations [21,22]
          





 






 




y
t
z
y
x
T
z
y
x
D
y
x
t
z
y
x
T
z
y
x
D
x
t
t
z
y
x I
I
I
I
I









 ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
           
t
z
y
x
I
T
z
y
x
k
t
z
y
x
I
T
z
y
x
k
z
t
z
y
x
T
z
y
x
D
z
I
I
I
I
I ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, 2
, 






 
 




(6)

4
          





 






 




y
t
z
y
x
T
z
y
x
D
y
x
t
z
y
x
T
z
y
x
D
x
t
t
z
y
x V
V
V
V
V









 ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
           
t
z
y
x
V
T
z
y
x
k
t
z
y
x
V
T
z
y
x
k
z
t
z
y
x
T
z
y
x
D
z
V
V
V
V
V ,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
, 2
, 






 
 




.
Boundary and initial conditions for these equations are
 
0
,
,
,
0





x
x
t
z
y
x

,
 
0
,
,
,




 x
L
x
x
t
z
y
x

,
 
0
,
,
,
0





y
y
t
z
y
x

,
 
0
,
,
,




 y
L
y
y
t
z
y
x

,
 
0
,
,
,
0





z
z
t
z
y
x

,
 
0
,
,
,




 z
L
z
z
t
z
y
x

, I (x,y,z,0)=fI (x,y,z), V (x,y,z,0)=fV (x,y,z). (7)
Here D(x,y,z,T) are the diffusion coefficients of the above complexes of radiation defects;
kI(x,y,z,T) and kV(x,y,z,T) are the parameters of decay of these complexes.
We calculate distributions of concentrations of point radiation defects in space and time by re-
cently elaborated approach [18]. The approach based on transformation of approximations of dif-
fusion coefficients in the following form: D(x,y,z,T)=D0[1+ g(x,y,z,T)], where D0 are the
average values of diffusion coefficients, 0<1, |g(x, y,z,T)|1, =I,V. We also used analogous
transformation of approximations of parameters of recombination of point defects and parameters
of generation of their complexes: kI,V(x,y,z,T)=k0I,V[1+I,V gI,V(x,y,z,T)], kI,I(x,y,z, T)=k0I,I [1+I,I
gI,I(x,y,z,T)] and kV,V(x,y,z,T)=k0V,V [1+V,V gV,V(x,y,z,T)], where k01,2 are the their average values,
0I,V <1, 0I,I <1, 0V,V<1, | gI,V(x,y,z,T)|1, | gI,I(x,y,z,T)|1, |gV,V(x,y,z,T)|1. Let us introduce
the following dimensionless variables:     *
,
,
,
,
,
,
~
I
t
z
y
x
I
t
z
y
x
I  ,  
t
z
y
x
V ,
,
,
~
  *
,
,
, V
t
z
y
x
V
 , V
I
V
I D
D
k
L 0
0
,
0
2

 , V
I D
D
k
L 0
0
,
0
2


 
 , 2
0
0 L
t
D
D V
I

 ,  = x/Lx,  = y
/Ly,  = z/Lz. The introduction leads to transformation of Eqs.(4) and conditions (5) to the follow-
ing form
   
     
 
 


















T
g
I
T
g
D
D
D
I
I
I
I
I
V
I
I
,
,
,
1
,
,
,
~
,
,
,
1
,
,
,
~
0
0
0




















   
     


















 


















,
,
,
~
,
,
,
~
,
,
,
1
,
,
,
~
0
0
0
0
0
0
I
I
T
g
D
D
D
D
D
D
I
I
I
V
I
I
V
I
I
 
     
   
















 ,
,
,
~
,
,
,
1
,
,
,
~
,
,
,
1 2
,
,
,
, I
T
g
V
T
g I
I
I
I
I
V
I
V
I 



 (8)
   
     
 
 


















T
g
V
T
g
D
D
D
V
V
V
V
V
V
I
V
,
,
,
1
,
,
,
~
,
,
,
1
,
,
,
~
0
0
0




















   
     


















 


















,
,
,
~
,
,
,
~
,
,
,
1
,
,
,
~
0
0
0
0
0
0
I
V
T
g
D
D
D
D
D
D
V
V
V
V
I
V
V
I
V
 
     
   
















 ,
,
,
~
,
,
,
1
,
,
,
~
,
,
,
1 2
,
,
,
, V
T
g
V
T
g V
V
V
V
V
V
I
V
I 




  0
,
,
,
~
0











,
  0
,
,
,
~
1











,
  0
,
,
,
~
0











,
  0
,
,
,
~
1











,

5
  0
,
,
,
~
0











,
  0
,
,
,
~
1











,  
 
*
,
,
,
,
,
,
~









 
f
 . (9)
We determine solutions of Eqs.(8) with conditions (9) framework recently introduced approach
[18], i.e. as the power series
   
  







0 0 0
,
,
,
~
,
,
,
~
i j k
ijk
k
j
i











 
 . (10)
Substitution of the series (10) into Eqs.(8) and conditions (9) gives us possibility to obtain equa-
tions for initial-order approximations of concentration of point defects  



 ,
,
,
I
~
000
and
 



 ,
,
,
V
~
000
and corrections for them  



 ,
,
,
I
~
ijk
and  



 ,
,
,
V
~
ijk
, i 1, j 1, k 1.
Solutions of the above equations could be obtained by standard Fourier approach [24,25].
Now we calculate distributions of concentrations of simplest complexes of point radiation defects
in space and time. To determine the distributions we transform approximations of diffusion coef-
ficients in the following form: D(x,y,z,T)=D0[1+ g(x,y,z,T)], where D0 are the average
values of diffusion coefficients. In this situation the Eqs.(6) could be written as
   
       






 





 t
z
y
x
I
T
z
y
x
k
x
t
z
y
x
T
z
y
x
g
x
D
t
t
z
y
x
I
I
I
I
I
I
I
,
,
,
,
,
,
,
,
,
,
,
,
1
,
,
, 2
,
0







 
     
    





 







 

 





z
t
z
y
x
T
z
y
x
g
z
D
y
t
z
y
x
T
z
y
x
g
y
D I
I
I
I
I
I
I
I









 ,
,
,
,
,
,
1
,
,
,
,
,
,
1 0
0
   
t
z
y
x
I
T
z
y
x
kI ,
,
,
,
,
,

   
       






 





 t
z
y
x
I
T
z
y
x
k
x
t
z
y
x
T
z
y
x
g
x
D
t
t
z
y
x
I
I
V
V
V
V
V
,
,
,
,
,
,
,
,
,
,
,
,
1
,
,
, 2
,
0







 
     
   






 







 

 





z
t
z
y
x
T
z
y
x
g
z
D
y
t
z
y
x
T
z
y
x
g
y
D V
V
V
V
V
V
V
V









 ,
,
,
,
,
,
1
,
,
,
,
,
,
1 0
0
   
t
z
y
x
I
T
z
y
x
kI ,
,
,
,
,
,
 .
Farther we determine solutions of above equations as the following power series
   
 





0
,
,
,
,
,
,
i
i
i
t
z
y
x
t
z
y
x 

  . (11)
Now we used the series (11) into Eqs.(6) and appropriate boundary and initial conditions. The
using gives the possibility to obtain equations for initial-order approximations of concentrations
of complexes of defects 0(x,y,z,t), corrections for them i(x,y,z,t) (for them i 1) and boundary
and initial conditions for them. Solutions of the equations were calculated by standard approaches
[24,25].
Now we calculate distribution of concentration of dopant in space and time by using the ap-
proach, which was used for analysis of radiation defects. To use the approach we consider fol-
lowing transformation of approximation of dopant diffusion coefficient: DL(x,y,z,T)=D0L[1+
LgL(x,y,z,T)], where D0L is the average value of dopant diffusion coefficient, 0L< 1,
|gL(x,y,z,T)|1. Farther we consider solution of Eq.(1) as the following series:

6
   
 





0 1
,
,
,
,
,
,
i j
ij
j
i
L t
z
y
x
C
t
z
y
x
C 
 .
Using the relation into Eq.(1) and conditions (2) leads to obtaining equations for the functions
Cij(x,y,z,t) (i 1, j 1), boundary and initial conditions for them. Solutions of the equations have
been calculated by standard approaches (see, for example, [24,25]).
We analyzed distributions of concentrations of dopant and radiation defects in space and time
analytically by using the second-order approximations on all parameters, which have been used
in appropriate series. Usually the second-order approximations are enough good approximations
to make qualitative analysis and to obtain quantitative results. All analytical results have been
checked by numerical simulation.
3. DISCUSSION
In this section we analyzed spatio-temporal distributions of concentrations of dopants. Figs. 2
shows typical spatial distributions of concentrations of dopants in neighborhood of interfaces of
heterostructures. We calculate these distributions of concentrations of dopants under the follow-
ing condition: value of dopant diffusion coefficient in doped area is larger, than value of dopant
diffusion coefficient in nearest areas. In this situation one can find increasing of compactness of
field-effect transistors with increasing of homogeneity of distribution of concentration of dopant
at one time. Changing relation between values of dopant diffusion coefficients leads to opposite
result (see Figs. 3).
Fig. 2a. Dependences of concentration of dopant, infused in heterostructure from Figs. 1, on coordinate in
direction, which is perpendicular to interface between epitaxial layer substrate. Difference between values
of dopant diffusion coefficient in layers of heterostructure increases with increasing of number of curves.
Value of dopant diffusion coefficient in the epitaxial layer is larger, than value of dopant diffusion coeffi-
cient in the substrate

7
x
0.0
0.5
1.0
1.5
2.0
C(x,

)
2
3
4
1
0 L/4 L/2 3L/4 L
Epitaxial layer Substrate
Fig. 2b. Dependences of concentration of dopant, implanted in heterostructure from Figs. 1, on coordinate
in direction, which is perpendicular to interface between epitaxial layer substrate. Difference between val-
ues of dopant diffusion coefficient in layers of heterostructure increases with increasing of number of
curves. Value of dopant diffusion coefficient in the epitaxial layer is larger, than value of dopant diffusion
coefficient in the substrate. Curve 1 corresponds to homogenous sample and annealing time  = 0.0048
(Lx
2
+Ly
2
+Lz
2
)/D0. Curve 2 corresponds to homogenous sample and annealing time  = 0.0057
(Lx
2
+Ly
2
+Lz
2
)/D0. Curves 3 and 4 correspond to heterostructure from Figs. 1; annealing times  = 0.0048
(Lx
2
+Ly
2
+Lz
2
)/D0 and  = 0.0057 (Lx
2
+Ly
2
+Lz
2
)/D0, respectively
Fig.3a. Distributions of concentration of dopant, infused in average section of epitaxial layer of hetero-
structure from Figs. 1 in direction parallel to interface between epitaxial layer and substrate of heterostruc-
ture. Difference between values of dopant diffusion coefficients increases with increasing of number of
curves. Value of dopant diffusion coefficient in this section is smaller, than value of dopant diffusion coef-
ficient in nearest sections

8
x
0.00000
0.00001
0.00010
0.00100
0.01000
0.10000
1.00000
C(x,

)
fC(x)
L/4
0 L/2 3L/4 L
x0
1
2
Substrate
Epitaxial
layer 1
Epitaxial
layer 2
Fig.3b. Calculated distributions of implanted dopant in epitaxial layers of heterostructure. Solid lines are
spatial distributions of implanted dopant in system of two epitaxial layers. Dushed lines are spatial distribu-
tions of implanted dopant in one epitaxial layer. Annealing time increases with increasing of number of
curves
C(x,

)
0 Lx
2
1
3
4
Fig.4a. Distributions of concentration of infused dopant in depth of heterostructure from Fig. 1 for different
values of annealing time (curves 2-4) and idealized step-wise approximation (curve 1). Increasing of num-
ber of curve corresponds to increasing of annealing time
It should be noted, that in the framework of the considered approach one shall optimize annealing
of dopant and/or radiation defects. To do the optimization we used recently introduced criterion
[26-34]. The optimization based on approximation real distribution by step-wise function 
(x,y,z) (see Figs. 4). Farther the required values of optimal annealing time have been calculated
by minimization the following mean- squared error
   
 
   


x y z
L L L
z
y
x
x
d
y
d
z
d
z
y
x
z
y
x
C
L
L
L
U
0 0 0
,
,
,
,
,
1
 . (12)
We show optimal values of annealing time as functions of parameters on Figs. 5. It is known, that
standard step of manufactured ion-doped structures is annealing of radiation defects. In the ideal

9
case after finishing the annealing dopant achieves interface between layers of heterostructure. If
the dopant has no enough time to achieve the interface, it is practicably to anneal the dopant addi-
tionally. The Fig. 5b shows the described dependences of optimal values of additional annealing
time for the same parameters as for Fig. 5a. Necessity to anneal radiation defects leads to smaller
values of optimal annealing of implanted dopant in comparison with optimal annealing time of
infused dopant.
x
C(x,

)
1
2
3
4
0 L
Fig.4b. Distributions of concentration of implanted dopant in depth of heterostructure from Fig. 1 for dif-
ferent values of annealing time (curves 2-4) and idealized step-wise approximation (curve 1). Increasing of
number of curve corresponds to increasing of annealing time
0.0 0.1 0.2 0.3 0.4 0.5
a/L, , , 
0.0
0.1
0.2
0.3
0.4
0.5

D
0
L
-2
3
2
4
1
Fig. 5a. Dimensionless optimal annealing time of infused dopant as a function of several parameters. Curve
1 describes the dependence of the annealing time on the relation a/L and  =  = 0 for equal to each other
values of dopant diffusion coefficient in all parts of heterostructure. Curve 2 describes the dependence of
the annealing time on value of parameter  for a/L=1/2 and  =  = 0. Curve 3 describes the dependence of
the annealing time on value of parameter  for a/L=1/2 and  =  = 0. Curve 4 describes the dependence of
the annealing time on value of parameter  for a/L=1/2 and  =  = 0

10
0.0 0.1 0.2 0.3 0.4 0.5
a/L, , , 
0.00
0.04
0.08
0.12

D
0
L
-2
3
2
4
1
Fig.5b. Dimensionless optimal annealing time of implanted dopant as a function of several parameters.
Curve 1 describes the dependence of the annealing time on the relation a/L and  =  = 0 for equal to each
other values of dopant diffusion coefficient in all parts of heterostructure. Curve 2 describes the depend-
ence of the annealing time on value of parameter  for a/L=1/2 and  =  = 0. Curve 3 describes the de-
pendence of the annealing time on value of parameter  for a/L=1/2 and  =  = 0. Curve 4 describes the
dependence of the annealing time on value of parameter  for a/L=1/2 and  =  = 0
4. CONCLUSIONS
In this paper we introduce an approach to increase integration rate of field-effect heterotransistors
framework band-pass filter. The approach gives us possibility to decrease area of the elements
with smaller increasing of the element’s thickness.
Papers in this format must not exceed twenty (20) pages in length. Papers should be submitted to
the secretary AIRCC. Papers for initial consideration may be submitted in either .doc or .pdf for-
mat. Final, camera-ready versions should take into account referees’ suggested amendments.
REFERENCES
[1] Lachin V.I., Savelov N.S. "Electronics", Rostov-na-Donu: Phoenix, 2001.
[2] Alexenko A.G., Shagurin I.I., "Microcircuitry", Moscow: Radio and communication, 1990.
[3] Avaev N.A., Naumov Yu.E., Frolkin V.T., "Basis of microelectronics", Moscow: Radio and commu-
nication, 1991.
[4] Ippolito C.M., Italia A., Guerra R., Palmisano G., "A reused chopper/AM mixing amplifier for bio-
signals acquisition", Analog Integrated Circuits and Signal Processing, vol. 80, pp. 459-471, 2014.
[5] Fathi D., Forouzandeh B., Masoumi N., "Design and simulation of perovskite solar cells based on
graphene and TiO2/graphene nanocomposite as electron transport layer", Nano, vol. 4, 4, pp. 233-
238, 2009.
[6] Chachuli S.A., Fasyar P.N.A., Soin N., Kar N.M., Yusop N., "Pareto ANOVA analysis for CMOS
0.18 µm two-stage Op-amp", Materials Science in Semiconductor Processing, vol. 24, pp. 9-14, 2014.
[7] Ageev A.O., Belyaev A.E., Boltovets N.S., Ivanov V.N., Konakova R.V., Kudrik Ya.Ya., Litvin
P.M., Milenin V.V., Sachenko A.V., "Influence of displacement of the electron-hole equilibrium on
the process of transition metals diffusion in GaAs", Semiconductors, vol. 43, no. 7, 7, pp. 897-903,
2009.
[8] Li Z., Waldron J., Detchprohm T., Wetzel C., Karlicek R.F., Chow Jr.T.P., "Monolithic integration of
light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transis-
tors for light-emitting power integrated circuits in GaN on sapphire substrate", Apply Physics Letters,
vol. 102, 19, pp. 192107-192109, 2013.

11
[9] Tsai J.-H., Chiu S.-Y., Lour W.-Sh., Guo D,-F.,. "InGaP/GaAs/InGaAs δ-doped p-channel field-
effect transistor with p+/n+/p camel-like gate structure", Semiconductors, vol. 43, 7, pp. 971-974,
2009.
[10] Alexandrov O.V., Zakhar'in A.O., Sobolev N.A., Shek E.I., Makoviychuk M.M., Parshin E.O., "For-
mation of donor centers upon annealing of dysprosium- and holmium-implanted silicon", Semicon-
ductors, vol. 32, 9, pp. 1029-1032, 1998.
[11] Kumar M.J., Singh T.V., "Quantum confinement effects in strained silicon MOSFETs", International
journal of nanoscience, vol. 7, 2-3, pp. 81-84, 2008.
[12] Sinsermsuksakul P., Hartman K., Kim S.B., Heo J., Sun L., Park H.H., Chakraborty R., Buonassisi
T., Gordon R.G., "Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc
oxysulfide buffer layer", Applied Physics Letters, vol. 102, 5, pp. 053901-053905, 2013.
[13] Reynolds J.G., Reynolds C.L., Mohanta Jr.A., Muth J.F., Rowe J.E., Everitt H.O., "Aspnes D.E.,
Shallow acceptor complexes in p-type ZnO", Applied Physics Letters, vol. 102, 15, pp. 152114-
152118, 2013.
[14] Ong K.K., Pey K.L., Lee P.S., Wee A.T.S., Wang X.C., Chong Y.F., "Fabrication of p-ZnO:Na/n-
ZnO:Na homojunction by surface pulsed laser irradiation", Applied Physics Letters, vol. 89, 17, pp.
172111-172114, 2006.
[15] Liu L., Zhang Y., Mu J., Hua T., "A hybrid time-to-digital converter based on sliding scale technique
suitable for random time-of-flight measurement", Analog Integrated Circuits and Signal Processing,
vol. 99, 2, pp. 417-481, 2019.
[16] Shishiyanu S.T., Shishiyanu T.S., Railyan S.K., "Shallow p-n junctions formed in silicon using
pulsed photon annealing", Semiconductors, vol. 36, 5, pp. 611-617, 2002.
[17] Bykov Yu.V., Yeremeev A.G., Zharova N.A., Plotnikov I.V., Rybakov K.I., Drozdov M.N., Drozdov
Yu.N., Skupov V.D., "Diffusion processes in semiconductor structures during microwave annealing",
Radiophysics and Quantum Electronics, vol. 43, 3, pp. 836-843, 2003.
[18] Pankratov E.L., Bulaeva E.A., "Doping of materials during manufacture p-n-junctions and bipolar
transistors. Analytical approaches to model technological approaches and ways of optimization of
distributions of dopants", Reviews in Theoretical Science. Vol. 1 (1). P. 58-82 (2013).
[19] Erofeev Yu.N., "Pulse devices", Moscow: Higher School, 1989.
[20] Kozlivsky V.V., "Modification of semiconductors by proton beams", Sant-Peterburg: Nauka, 2003.
[21] Gotra Z.Yu., "Technology of microelectronic devices", Moscow: Radio and communication, 1991.
[22] Vinetskiy V.L., Kholodar' G.A., "Radiative physics of semiconductors", Kiev: Naukova Dumka,
1979.
[23] Fahey P.M., Griffin P.B., Plummer J.D., "Point defects and dopant diffusion in silicon", Rev. Mod.
Phys. Vol. 61 (2). P. 289-388 (1989).
[24] Tikhonov A.N., Samarskii A.A., "The mathematical physics equations", Moscow: Nauka, 1972.
[25] Carslaw H.S., Jaeger J.C., "Conduction of heat in solids", London: Oxford University Press, 1964.
[26] Pankratov E.L., Dopant diffusion dynamics and optimal diffusion time as influenced by diffusion-
coefficient nonuniformity, Russian Microelectronics, vol. 36, 1, pp. 33-39, 2007.
[27] Pankratov E.L., Redistribution of dopant during annealing of radiative defects in a multilayer struc-
ture by laser scans for production an implanted-junction rectifiers, International Journal of Nanosci-
ence, vol. 7, 4-5, pp. 187-197, 2008.382
[28] Pankratov E.L., On approach to optimize manufacturing of bipolar heterotransistors framework cir-
cuit of an operational amplifier to increase their integration rate, Journal of Computational and Theo-
retical Nanoscience, vol. 14, 10, pp. 4885-4899, 2017.
[29] Pankratov E.L., On optimization of manufacturing of two-phase logic circuit based on heterostruc-
tures to increase density of their elements. Influence of miss-match induced stress Advanced science,
engineering and medicine, vol. 9, 9, pp. 787-801 (2017).
[30] Pankratov E.L., Bulaeva E.A., An approach to increase the integration rate of planar drift heterobipo-
lar transistors, Materials science in semiconductor processing, vol. 34, pp. 260-268, 2015.
[31] Pankratov E.L., Bulaeva E.A., An analytical approach for analysis and optimization of formation of
field-effect heterotransistors, Multidiscipline modeling in materials and structures, vol. 12, 4, pp. 578-
604, 2016.
[32] Pankratov E.L., On influence of mismatch-induced stress and porosity of materials on manufacturing
hetrostructure-based devices, Journal of coupled systems and multiscale dynamics, vol. 6, 1, pp. 36-
52 (2018).

12
[33] Pankratov E.L., On modelling of manufacturing of a high-voltage current driver framework a hetero-
structures under influence of mismatch-induced stress and porosity of materials, Journal of computa-
tional and theoretical nanoscience, vol. 15, 6/7, pp. 1898-1914 (2018).

ON MODEL OF MANUFACTURING OF A BAND-PASS FILTER TO INCREASE INTEGRATION RATE OF FIELD-EFFECT HETEROTRANSISTORS

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ON MODEL OF MANUFACTURING OF A BAND-PASS FILTER TO INCREASE INTEGRATION RATE OF FIELD-EFFECT HETEROTRANSISTORS