Baofeng UV-3R

1. M1FM3
30V 3A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
SHINDENGEN
Single
Schottky Rectifiers (SBD)
œAbsolute Maximum Ratings (Tc=25Ž)
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55`150 Ž
Operating Junction Temperature Tj 150 Ž
Maximum Reverse Voltage VRM 30 V
Average Rectified Forward Current IO 50Hz sine wave, R-load Ta=25Ž On glass-epoxy substrate 2.1 A
50Hz sine wave, R-load Tc=100Ž 3.0
Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25Ž 30 A
œElectrical Characteristics Tc=25Ž
Item Symbol Conditions Ratings Unit
Forward Voltage VF1 IF=0.5A, Pulse measurement Max.0.40 V
VF2 IF=1.5A, Pulse measurement Max.0.46
Reverse Current IR VR=VRM, Pulse measurement Max.0.05 mA
Junction Capacitance Cj f=1MHz, VR=10V Typ.80 pF
Æjc junction to case Max.18
Thermal Resistance Æjl junction to lead Max.20 Ž/W
Æja junction to ambient On glass-epoxy substrate Max.80

2. 0 0.2 0.4 0.6 0.8 1 1.2
0.1
1
10
Tc=150°C [MAX]
Tc=150°C [TYP]
Tc= 25°C [MAX]
Tc= 25°C [TYP]
5
2
0.5
0.2
M1FM3 Forward Voltage
Forward
Current
I
F
[A]
Forward Voltage VF [V]
Pulse measurement per diode

3. 0
0.5
1
1.5
2
2.5
3
3.5
0 1 2 3 4 5
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
Forward Power Dissipation
M1FM3
Tj = 150°C
0
tp
IO
T
D=tp/T
Average Rectified Forward Current IO [A]
Forward
Power
Dissipation
P
F
[W]

4. 0
10
20
30
40
50
1 10 100
2 5 20 50
M1FM3 Peak Surge Forward Capability
I
FSM
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
Peak
Surge
Forward
Current
I
FSM
[A]
Number of Cycles [cycle]

5. 0 5 10 15 20 25 30 35 40
0.001
0.01
0.1
1
10
100
Tc=50°C [TYP]
Tc=75°C [TYP]
Tc=100°C [TYP]
Tc=125°C [TYP]
Tc=150°C [TYP]
M1FM3 Reverse Current
Reverse
Current
I
R
[mA]
Pulse measurement per diode
Reverse Voltage VR [V]

6. 0
0.5
1
1.5
2
2.5
0 5 10 15 20 25 30 35
DC
D=0.05
0.1
0.2
0.3
0.5
SIN
0.8
Reverse Power Dissipation
M1FM3
0
tp
VR
T
D=tp/T
Tj = 150°C
Reverse
Power
Dissipation
P
R
[W]
Reverse Voltage VR [V]

7. 10
100
1000
0.1 1 10
f=1MHz
Tc=25°C
TYP
500
200
50
20
0.2 0.5 2 5 20 30
Junction
Capacitance
Cj
[pF]
Reverse Voltage VR [V]
Junction Capacitance
M1FM3

8. 0 20 40 60 80 100 120 140 160
0
1
2
3
4
5
6
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
VR = 15V
0
tp
IO
T
D=tp/T
0
VR
M1FM3
Case Temperature Tc [°C]
Average
Rectified
Forward
Current
I
O
[A]
Derating Curve

9. 0 20 40 60 80 100 120 140 160
0
0.5
1
1.5
2
2.5
3
3.5
4
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
VR = 15V
0
tp
IO
T
D=tp/T
0
VR
M1FM3
Glass-epoxy substrate
Conductor layer 35um
Average
Rectified
Forward
Current
I
O
[A]
Derating Curve
Ambient Temperature Ta [°C]

10. 0 20 40 60 80 100 120 140 160
0
1
2
3
4
5
6
DC
D=0.8
0.5
SIN
0.3
0.2
0.1
0.05
M1FM3
VR = 15V
0
tp
IO
T
D=tp/T
0
VR
Lead Temperature Tl [°C]
Average
Rectified
Forward
Current
I
O
[A]
Derating Curve

11. 0.1
1
10
100
10-4 10-3 10-2 10-1 100 101 102 103
Æjc,Æjl,Æja
Transient
Thermal
Impedance
[°C/W]
Æja
Æjl
Æjc
Transient Thermal Impedance
M1FM3
t [s]
Time

12. 0
20
40
60
80
100
120
140
160
1 10 100 1000
θja -
θja
[°C/W]
[mm2]
Conductor pattern area
M1FM3
Glass-epoxy substrate
Conductor layer 35um
Conductor pattern area

13. This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.