SPICE MODEL of TPC8024-H (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC8024-H
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.5 4.1 4.120 0.487
1 7.5 7.48 -0.266
2 16 16.1 0.625
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Vgs-Id Characteristic
Circuit Simulation result
20A
16A
12A
8A
4A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(V3)
V_V2
Evaluation circuit
U13 V3
0Vdc
V1
TPC8024
V2
0Vdc 10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
2 2.6 2.58 -0.769
4 2.7 2.68 -0.741
6 2.8 2.77 -1.071
8 2.85 2.83 -0.701
10 2.9 2.89 -0.344
12 2.95 2.94 -0.338
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Id-Rds(on) Characteristic
Circuit Simulation result
10A
9A
8A
7A
6A
5A
4A
3A
2A
1A
0A
0V 40mV 80mV 120mV 160mV 200mV
I(V3)
V_VDS
Evaluation circuit
U13 V3
0Vdc
VGS VDS
10Vdc TPC8024 0Vdc
0
Simulation Result
ID=6.5A, VGS=10V Measurement Simulation Error (%)
R DS (on) 9 m 9.03 m 0.333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Gate Charge Characteristic
Circuit Simulation result
20V
18V
VDD=6V
16V
14V
12V
12V
10V 24V
8V
6V
4V
2V
0V
0 8n 16n 24n 32n 40n
V(W1:3)
Time*1mS
Evaluation circuit
U7 V2
0Vdc
Dbreak
W1
+
PER = 1000u D1
PW = 600u
- TPC8024 I2
TF = 10n W 13Adc
TR = 10n IOFF = 1mA
TD = 0 ION = 0uA
I2 = 1m
I1
I1 = 0 V1
24Vdc
0
Simulation Result
VDD=24V,ID=13A Measurement Simulation Error (%)
,VGS=10V
Qgs 4.5 nC 4.48 nC -0.444
Qgd 4.9 nC 4.86 nC -0.816
Qg 23 nC 23.6 nC 2.608
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 1414 1420 0.424
0.3 1300 1290 -0.769
0.6 1157 1155 -0.172
1 1000 1012 1.2
3 698 705 1.002
6 529 531 0.378
10 440 440 0
30 259 264 1.930
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Switching Time Characteristic
Circuit Simulation result
14
10 VDD = 15V Vg = 0/10.0V
5
0
1.95us 2.00us 2.05us 2.10us
V(R1:1) V(L2:1)/1.5
Time
Evaluation circuit
RG L1 U3 L2 R2
30nH 50nH 2.3
4.7
V1 = 0
V2 = 20 V2 R1 TPC8024
TD = 2u V1
4.7 15Vdc
TR = 6n
TF = 7n
PW = 20u
PER = 2000u
0
Simulation Result
ID=6.5 A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
ton 11.00 ns 10.45 ns -5
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Output Characteristic
Circuit Simulation result
20A
10V
4.5V
3.2V
16A
3.1V
12A
3.0V
8A
2.9V
4A
VGS=2.7V
0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
U13
0Vdc
Vstep Vv ariable
TPC8024 10Vdc
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
10mA
0.2V 0.4V 0.6V 0.8V 1.0V
I(R1)
V_V1
Evaluation Circuit
R1 U8
0.01m
V1 TPC8024
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) Measurement Simulation %Error
0.01 0.52 0.522 0.384
0.02 0.542 0.541 -0.184
0.05 0.565 0.565 0
0.1 0.586 0.583 -0.511
0.2 0.603 0.601 -0.331
0.5 0.626 0.625 -0.159
1 0.64 0.643 0.468
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.9us 1.0us 1.1us 1.2us 1.3us
I(R1)
Time
Evaluation Circuit
R1
50
D8024H
V1 = -9.4v V1
V2 = 10.6v
TD = 0
TR = 10ns
TF = 10ns
PW = 1us U10
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error(%)
trj 16.8 ns 16.87 ns 0.416
trb 71.2 ns 71 ns -0.28
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic Reference
Trj=16.8(ns)
Trb=71.2(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1 U2
0.01m
V1
0Vdc TPC8024
Ropen
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005