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Device Modeling Report




COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: C4D20120D
MANUFACTURER: CREE
REMARK: Professional Model




                 Bee Technologies Inc.




   All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                  1
DIODE MODEL PARAMETERS

 Spice model
                                      Model description
  parameter
     IS        Saturation Current
     N         Emission Coefficient
    RS         Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




           All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                          2
Forward Current Characteristics

Circuit Simulation result




Evaluation circuit




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                                    3
Comparison Graph

Circuit Simulation result




Comparison table


                                             VF (V)
               IF (A)                                                       %Error
                                Measurement           Simulation
                        0.1              0.855                 0.862              0.82
                        0.2              0.897                 0.886              -1.23
                        0.5              0.925                 0.927              0.22
                            1            0.970                 0.972              0.21
                            2            1.045                 1.044              -0.10
                            5            1.233                 1.226              -0.57
                        10               1.497                 1.506              0.60
                        20               2.050                 2.047              -0.15




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                                          4
Reverse Current Characteristics

Circuit Simulation result




Evaluation circuit




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                                    5
Comparison Graph

Circuit Simulation result




Comparison table


                                             IR (uA)
              VR (V)                                                        %Error
                             Measurement               Simulation
                    1200           5.000E+00             4.773E+00                -4.53
                    1300           1.239E+01             1.299E+01                4.88
                    1400           3.500E+01             3.537E+01                1.06
                    1500           9.500E+01             9.628E+01                1.35
                    1570           2.000E+02             1.941E+02                -2.96
                    1575           7.000E+02             7.000E+02                0.00




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                                          6
Total Capacitance Characteristics

Circuit Simulation result




Evaluation circuit




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                                    7
Comparison Graph

Circuit Simulation result




Comparison table


                                            CT (pF)
              VR (V)                                                        %Error
                                Measurement          Simulation
                       0.2            730.000               730.848               0.12
                       0.5            663.000               663.358               0.05
                            1         583.000               584.437               0.25
                            2         486.000               487.400               0.29
                            5         355.000               355.188               0.05
                        10            270.000               268.372               -0.60
                        20            199.000               198.668               -0.17
                        50            130.000               131.241               0.95
                       100             95.000                95.308               0.32
                       200             69.000                69.039               0.06
                       500             44.000                44.992               2.25
                    1000               34.000                32.531               -4.32

                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                                          8

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SPICE MODEL of C4D20120D LTspice Model (Professional Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: C4D20120D MANUFACTURER: CREE REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 1
  • 2. DIODE MODEL PARAMETERS Spice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 2
  • 3. Forward Current Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 3
  • 4. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.855 0.862 0.82 0.2 0.897 0.886 -1.23 0.5 0.925 0.927 0.22 1 0.970 0.972 0.21 2 1.045 1.044 -0.10 5 1.233 1.226 -0.57 10 1.497 1.506 0.60 20 2.050 2.047 -0.15 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 4
  • 5. Reverse Current Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 5
  • 6. Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 1200 5.000E+00 4.773E+00 -4.53 1300 1.239E+01 1.299E+01 4.88 1400 3.500E+01 3.537E+01 1.06 1500 9.500E+01 9.628E+01 1.35 1570 2.000E+02 1.941E+02 -2.96 1575 7.000E+02 7.000E+02 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 6
  • 7. Total Capacitance Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 7
  • 8. Comparison Graph Circuit Simulation result Comparison table CT (pF) VR (V) %Error Measurement Simulation 0.2 730.000 730.848 0.12 0.5 663.000 663.358 0.05 1 583.000 584.437 0.25 2 486.000 487.400 0.29 5 355.000 355.188 0.05 10 270.000 268.372 -0.60 20 199.000 198.668 -0.17 50 130.000 131.241 0.95 100 95.000 95.308 0.32 200 69.000 69.039 0.06 500 44.000 44.992 2.25 1000 34.000 32.531 -4.32 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 8