SPICE MODEL of D5LC20U (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net.Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ STANDARD MODEL
PART NUMBER: D5LC20U
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
D1
D5LC20U
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristics
Circuit Simulation result
10A
1.0A
100mA
10mA
0.5V 0.6V 0.7V 0.8V 0.9V 1.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 D1
D5LC20U
0
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5. Comparison Graph
Circuit Simulation result
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Measurement
Simulation
Forword Current, IF (A)
1
0.1
0.01
0.5 0.6 0.7 0.8 0.9 1
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.01 0.533 0.532 -0.19
0.02 0.558 0.558 0.00
0.05 0.596 0.595 -0.17
0.1 0.629 0.628 -0.16
0.2 0.667 0.666 -0.15
0.5 0.729 0.729 0.00
1 0.784 0.784 0.00
2 0.850 0.849 -0.12
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6. Junction Capacitance Characteristic
Circuit Simulation result
200p
180p
160p
140p
120p
100p
80p
60p
40p
20p
0
0V 20V 40V 60V 80V 100V
I(V2)/(200V/1us)
V(R)
Evaluation circuit
V2
R
V1 = 0 0
V2 = 200
TD = 0 V1 D1
TR = 1us D5LC20
TF = 50ns
PW = 5us
PER = 10us
0
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7. Comparison Graph
Circuit Simulation result
200
Measurement
180
Simulation
160
Capacitance, C (pF)
140
120
100
80
60
40
20
0
0 20 40 60 80 100
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.1 161.080 160.800 -0.17
0.2 152.000 152.000 0.00
0.5 132.450 133.033 0.44
1 113.360 113.404 0.04
2 91.239 92.000 0.83
5 67.456 66.000 -2.16
10 50.000 50.000 0.00
20 37.106 37.246 0.38
50 24.760 25.120 1.45
100 18.178 18.600 2.32
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8. Reverse Recovery Characteristics
Circuit Simulation result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
19.94us 19.98us 20.02us 20.06us 20.10us 20.14us
I(D1)
Time
Evaluation circuit
R1
50
V1 = -9.4V V1
V2 = 10.7V D1
TD = 0 D5LC20U
TR = 10n
TF = 10n
PW = 20u
PER = 50u
0
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 8.80 8.81 0.11
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9. Reverse Recovery Characteristics Reference
Measurement
Trj = 8.8(ns)
Trb = 16.4(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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