SPICE MODEL of D3SB80 (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net.Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ STANDARD MODEL
PART NUMBER: D3SB80
MANUFACTURER: Shindengen
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
D1
DD3SB80
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristics
Circuit Simulation result
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 D1
D3SB80
0V
0
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5. Comparison Graph
Circuit Simulation result
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Measurement
Simulation
Forword Current, IF (A)
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.1 0.750 0.748 -0.27
0.2 0.770 0.773 0.39
0.5 0.810 0.808 -0.25
1 0.840 0.839 -0.12
2 0.875 0.877 0.23
4 0.930 0.923 -0.75
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6. Junction Capacitance Characteristic
Circuit Simulation result
100p
90p
80p
70p
60p
50p
40p
30p
20p
10p
100mV 1.0V 10V 100V
I(V2)/(800V/1u)
V(R)
Evaluation circuit
V2
R
0V
V1 = 0 V1 D1
V2 = 800 D3SB80
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10ms
0
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7. Comparison Graph
Circuit Simulation result
100
Measurement
90 Simulation
80
Capacitance, C (pF)
70
60
50
40
30
20
10
0.1 1 10 100
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.1 89.748 89.900 0.17
0.2 85.335 85.317 -0.02
0.5 75.662 75.900 0.31
1 66.916 67.088 0.26
2 57.441 57.600 0.28
5 45.863 45.600 -0.57
10 38.075 37.800 -0.72
20 31.252 31.135 -0.37
50 23.868 24.063 0.82
100 19.424 19.800 1.94
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8. Reverse Recovery Characteristics
Circuit Simulation result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
12us 16us 20us 24us 28us 32us 36us 40us 44us 48us 52us
I(R1)
Time
Evaluation circuit
R1
50
V1 = -9.23V
V2 = 10.7V
TD = 0us V1 D1
TR = 10ns D3SB80
TF = 10ns
PW = 20us
PER = 60us
0
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj us 6.56 6.51 -0.76
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9. Reverse Recovery Characteristics Reference
Trj = 6.56 (us)
Trb = 4.96 (us)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Example
Relation between trj and trb
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