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TRIBOLOGICAL STUDY
OF SiC
118CR0123 COU RSE MENTOR
THANSEER JARSHAN A PROF.DEBASISH SARKAR
DEPARTMENT OF CERAMIC ENGINEERING
INTRODUCTION:
 Silicon carbide structural ceramic is widely used in industries because of its
unique combination of properties such as:
◦ High hardness
◦ High modulus
◦ High temperature strength
◦ Good oxidation resistance
◦ Good thermal shock resistance
◦ High thermal conductivity
A coordinated tetrahedron, either SiC4 or CSi4, is the
primary structure of covalently connected silicon carbide.
Although there are many other SiC polytypes, the cubic
polytype (β-SiC) and non-cubic structures (hexagonal or
rombohedral) as α–SiC are the most common.
Densification of SiC powders at lower temperatures is
challenging due to the strong covalent link and extremely
low self-diffusion coefficient (10^-13—10^-14 cm2 / sec).
Only at extremely high pressures (30-100 MPa) and
temperatures above 2100 C is densification conceivable.
Sintering aids are required in order to obtain high density
at lower temperatures and pressures.
Sintering additives such as metal oxides, Al-B-C, and
AlN–metal oxides alter the microstructure of SiC
ceramics and increase fracture toughness during
liquid-phase sintering.
Because of the combination of intergranular crack
mode induced by the glassy grain boundary phase
and energy dissipation mechanisms in the crack
wake, platelet-reinforced microstructures have
increased toughness.
The crystallinity of the grain boundary phase of SiC
ceramics is also affected by the sintering additive
composition.
Liquid phase sintered silicon carbide (LPS-SiC) ceramics are
favoured for a variety of tribological and structural
applications due to their appealing features such as:
 In turbine parts
 Heat exchanger tubes
 Bearings
 Mechanical seals
 Cylinder liners
 Burner parts in fluidized bed combustion system
 Cutting tools
The coefficient of friction (COF) in unlubricated sliding
studies stated to be varied in the wide range of 0.2 - 0.8,
which dropped to 0.02 in lubricating media such as water,
paraffin oil, and so on, based on the circumstances of sliding
and features of SiC and SiC composites.
The wear rates under sliding situations ranged from 10^-7
to 10^-4 mm3 / N.m.
The erosion of SiC ceramics is mostly researched under
solid particle erosion circumstances, with little research done
under cavitation conditions.
 Solid particle erosion of SiC and SiC-based composites is
typically caused by brittle fracture as a result of lateral and
radial cracking, according to reports.
 Based on erosion parameters, microstructural and
mechanical features of SiC ceramics, the erosion rate varies
from 10^-1 to 10^3 mm3 /kg.
Several material removal mechanisms, such as mechanical
fracture, chipping, plastic deformation, ploughing, and
or formation and removal of tribooxide layer, were mostly
responsible for the complex tribological behaviour of SiC
ceramics and their composites in sliding and solid particle
erosion conditions.
APPLICATIONS:
Silicon carbide forms natural crystals, that are much hard,
more abrasive and dissociated or sublimate at higher
temperatures. Due to this reason silicon carbide is used in
the following applications:
Abrasive Industry:
Since silicon carbide has very good hardness, it is the first
choice among the raw materials for manufacturing abrasive
pipe, pumping chamber etc. The abrasiveness of silicon
carbide is more than 5 to 20 times higher than that of cast
iron and rubber.
Automobiles:
Silicon infiltrated carbon-carbon composite is used for high
performance ceramic brake discs as it is able to withstand
extreme temperatures.
The silicon reacts with the graphite in the carbon-carbon
composite to become carbon fiber reinforced silicon carbide
(C/SiC).
These discs are used on some road going sports cars,
supercars as well as other performance cars including the
Porsche Carrera GT, Bugatti Veyron, Bentleys Ferraris
Lamborghini, some specific high performance Audis etc
ELECTRONICS:
Silicon carbide is used as a semi conductor in research and
early mass production providing advantages for fast, high
temperature and/or high voltage devices.
First devices available were Schottky diodes, followed by
junction gate FETs and MOSFETs for high powered switching.
Bipolar transistors are currently developed.
It is also used in making LEDs.
STRUCTURAL MATERIALS:
Like other hard ceramics silicon carbide is used in
composite armour and in ceramic plates in bulletproof vests.
Silicon carbide is used as a support and shelving material in
high temperature kilns such as for firing ceramics glass fusing
or glass casting.
SiC kiln shelves are considerably later and more durable
than traditional alumina shelves.
TYPICAL SILICON CARBIDE USES:
Suction box covers.
Fixed and moving turbine components.
Seals, bearings.
Ball valve parts.
Hot gas flow liners.
Heat exchangers.
Semi conduction process equipment.
Jewellery.
Summary and future scope:
Wear and friction characteristics of SiC ceramics change
with microstructural modification while sliding.
Wear resistance was improved by a hard interlocking
network of elongated grains or grains with a high aspect
ratio.
Clear grain boundaries in SiC ceramics outperformed
amorphous grain boundaries in terms of wear resistance.
When SiC ceramics have a coarse grain structure, the
transition from moderate to severe wear happens more
quickly than when the grain structure is fine.
Doping elements alter the kinetics of tribochemical
reactions, resulting in various friction and wear
characteristics.
Summary and future scope:
The majority of research used ambient temperature
mechanical and microstructural properties of SiC ceramics to
predict high temperature wear behaviour, however the
influence of microstructural and mechanical features at
selected temperatures should be addressed when assessing
actual potential.
Future research into the influence of microstructural or
mechanical properties at low temperatures will look into the
possibility of SiC ceramics and composites for usage in space
or maritime applications.
REFERENCES:
1. G. Roewer, U. Herzog, K. Trommer, E. Muller, and S. Fruhauf, “Silicon Carbide–A Survey of Synthetic Approaches, Properties and Applications,” Struct.
Bond., 101 59-135 (2002).
2. B. V. M. Kumar, Y.-W. Kim, D. S. Lim, and W. S. Seo, “Influence of Small Amount of Sintering Additives on Unlubricated Sliding Wear Properties of SiC
Ceramics,” Ceram. Int., 37 [8] 3599-608 (2011).
3. N. P. Padture, “In Situ-Toughened Silicon Carbide,” J. Am. Ceram. Soc., 77 519-23 (1994).
4. P. T. B. Shaffer, “A Review of the Structure of Silicon Carbide,” Acta Cryst., B, 25 477-88 (1969).
5. H. P. Iwata, U. Lindefelt, S. Oberg, and P.R. Briddon, “Stacking Faults in Silicon Crabides,” Phys. B, 340-342 165-70 (2003).
6. Y. M. Tairov and V. F. Tsvetkov, "Investigation of Growth Processes of Ingots of Silicon Carbide Single Crystals," J. Crys. Growth, 43 [2] 209-12 (1978).
7. A. J. Van Bommel, J. E. Crombeen, and A. V. Tooren, “Leed and Auger Electron Observations of the SiC (0001) Surface,” Surf. Sci., 48 463-72 (1975).
8. A. Taylor and D. S. Laidler, “The Formation and Crystal Structure of Silicon Carbide,” Br. J. Appl. Phys., 1 [7] 174-81 (1950).
9. W. Wesch, “Silicon Carbide: Synthesis and Processing,” Nucl. Instrum. Meth. B, 116 305-21 (1996).
10. V. A. Izhevskyi, L. A. Genova, J. C. Bressiani, and A. H. A. Bressiani, “Silicon Carbide. Structure, Properties and Processing,” Ceramica, 46 4-13 (2000).
11. T. Hase, “Boron Transport and Change of Lattice Parameter during Sintering of β-SiC,” J. Am. Ceram. Soc., 63 [5- 6] 349-50 (1980).
12. K. Negita, “Effective Sintering Aids for Silicon Carbide Ceramics: Reactivities of Silicon Carbide with Various Additives,” J. Am. Ceram. Soc., 69 [12]
C308-10 (1986).
13. D. Sciti, S. Guicciardi, and A. Bellosi, “Effect of Annealing Treatment on Microstructure and Mechanical Properties of Liquid-Phase Sintered Silicon
Carbide,” J. Eur. Ceram. Soc., 21 621-32 (2001).
14. D. I. Cheong, J. Kim, and S. J. Kang, “Effect of Isothermal Annealing on the Microstructure and Mechanical Properties of SiC Ceramics Hot-Pressed
with Y2O3 and Al2O3 Additions,” J. Eur. Ceram. Soc., 22 1321-27 (2002).
15. D. Sciti and A. Bellosi, “Effects of Additives on Densification, Microstructure and Properties of Liquid-Phase Sintered Silicon Carbide” J. Mater. Sci., 35
3849-55 (2000).
REFERENCE:
16. G. Rixecker, I. Wiedmann, A. Rosinus, and F. Aldinger, “High-Temperature Effect in the
Fracture Mechanical Behaviour of Silicon Carbide Liquid-Phase Sintered with AlN-Y2O3
Additives,” J. Eur. Ceram. Soc., 21 1013-19 (2001).
17. R. R. Lee and W. C. Wei, “Fabrication, Microstructure, and Properties of SiC–AlN Ceramic
Alloys,” Ceram. Eng Sci. Proc., 11 [7-8] 1094-121 (1990).
18. S. G. Lee, Y.-W. Kim, and M. Mitomo, “Relationship between Microstructure and Fracture
Toughness of Toughened Silicon Carbide Ceramics,” J. Am. Ceram. Soc., 84 1347-53 (2001).
19. H. J. Choi, J. G. Lee, and Y.-W. Kim, “Oxidation Behavior of Liquid-Phase Sintered Silicon
Carbide with Aluminum Nitride and Rare-Earth Oxides (Re2O3, where Re =Y, Er, Yb),” J. Am.
Ceram. Soc., 85 [9] 2281-86 (2002).
20. Y. Zhou, K. Hirao, Y. Yamauchi, and S. Kanzaki, “Tailoring the Mechanical Properties of
Silicon Carbide Ceramics by Modification of the Intergranular Phase Chemistry and
Microstructure,” J. Eur. Ceram. Soc., 22 2689-96 (2002).
21. D. Chen, X. F. Zhang, and R. O. Ritchie, “Effects of GrainBoundary Structure on the
Strength, Toughness, and Cyclic-Fatigue Properties of a Monolithic Silicon Carbide,” J. Am.
Ceram. Soc., 83 2079-81 (2000).
22. R. Yuan, J. J. Kruzic, X. F. Zhang, L. C. De Jonghe, and R. O. Ritchie, “Ambient to High
Temperature Fracture Toughness and Cyclic Fatigue Behavior in Al Containing Silicon Carbide
Ceramics,” Acta Mater., 51 6477-91 (2003).
23. P. F. Becher, “Microstructural Design of Toughened Ceramics,” J. Am. Ceram. Soc., 74 255-
269 (1991).
24. H. J. Choi, Y. -W. Kim, M. Mitomo, T. Nishimura, J. H. Lee, and D. Y. Kim, “Intergranular
Glassy Phase Free SiC Ceramics Retains Strength at 1500o C,” Scripta Mater., 50 1203-7 (2004)

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118CR0123_THANSEER JARSHAN A.pptx

  • 1. TRIBOLOGICAL STUDY OF SiC 118CR0123 COU RSE MENTOR THANSEER JARSHAN A PROF.DEBASISH SARKAR DEPARTMENT OF CERAMIC ENGINEERING
  • 2. INTRODUCTION:  Silicon carbide structural ceramic is widely used in industries because of its unique combination of properties such as: ◦ High hardness ◦ High modulus ◦ High temperature strength ◦ Good oxidation resistance ◦ Good thermal shock resistance ◦ High thermal conductivity
  • 3. A coordinated tetrahedron, either SiC4 or CSi4, is the primary structure of covalently connected silicon carbide. Although there are many other SiC polytypes, the cubic polytype (β-SiC) and non-cubic structures (hexagonal or rombohedral) as α–SiC are the most common. Densification of SiC powders at lower temperatures is challenging due to the strong covalent link and extremely low self-diffusion coefficient (10^-13—10^-14 cm2 / sec). Only at extremely high pressures (30-100 MPa) and temperatures above 2100 C is densification conceivable. Sintering aids are required in order to obtain high density at lower temperatures and pressures.
  • 4. Sintering additives such as metal oxides, Al-B-C, and AlN–metal oxides alter the microstructure of SiC ceramics and increase fracture toughness during liquid-phase sintering. Because of the combination of intergranular crack mode induced by the glassy grain boundary phase and energy dissipation mechanisms in the crack wake, platelet-reinforced microstructures have increased toughness. The crystallinity of the grain boundary phase of SiC ceramics is also affected by the sintering additive composition.
  • 5. Liquid phase sintered silicon carbide (LPS-SiC) ceramics are favoured for a variety of tribological and structural applications due to their appealing features such as:  In turbine parts  Heat exchanger tubes  Bearings  Mechanical seals  Cylinder liners  Burner parts in fluidized bed combustion system  Cutting tools
  • 6. The coefficient of friction (COF) in unlubricated sliding studies stated to be varied in the wide range of 0.2 - 0.8, which dropped to 0.02 in lubricating media such as water, paraffin oil, and so on, based on the circumstances of sliding and features of SiC and SiC composites. The wear rates under sliding situations ranged from 10^-7 to 10^-4 mm3 / N.m. The erosion of SiC ceramics is mostly researched under solid particle erosion circumstances, with little research done under cavitation conditions.
  • 7.  Solid particle erosion of SiC and SiC-based composites is typically caused by brittle fracture as a result of lateral and radial cracking, according to reports.  Based on erosion parameters, microstructural and mechanical features of SiC ceramics, the erosion rate varies from 10^-1 to 10^3 mm3 /kg. Several material removal mechanisms, such as mechanical fracture, chipping, plastic deformation, ploughing, and or formation and removal of tribooxide layer, were mostly responsible for the complex tribological behaviour of SiC ceramics and their composites in sliding and solid particle erosion conditions.
  • 8. APPLICATIONS: Silicon carbide forms natural crystals, that are much hard, more abrasive and dissociated or sublimate at higher temperatures. Due to this reason silicon carbide is used in the following applications: Abrasive Industry: Since silicon carbide has very good hardness, it is the first choice among the raw materials for manufacturing abrasive pipe, pumping chamber etc. The abrasiveness of silicon carbide is more than 5 to 20 times higher than that of cast iron and rubber.
  • 9. Automobiles: Silicon infiltrated carbon-carbon composite is used for high performance ceramic brake discs as it is able to withstand extreme temperatures. The silicon reacts with the graphite in the carbon-carbon composite to become carbon fiber reinforced silicon carbide (C/SiC). These discs are used on some road going sports cars, supercars as well as other performance cars including the Porsche Carrera GT, Bugatti Veyron, Bentleys Ferraris Lamborghini, some specific high performance Audis etc
  • 10. ELECTRONICS: Silicon carbide is used as a semi conductor in research and early mass production providing advantages for fast, high temperature and/or high voltage devices. First devices available were Schottky diodes, followed by junction gate FETs and MOSFETs for high powered switching. Bipolar transistors are currently developed. It is also used in making LEDs.
  • 11. STRUCTURAL MATERIALS: Like other hard ceramics silicon carbide is used in composite armour and in ceramic plates in bulletproof vests. Silicon carbide is used as a support and shelving material in high temperature kilns such as for firing ceramics glass fusing or glass casting. SiC kiln shelves are considerably later and more durable than traditional alumina shelves.
  • 12. TYPICAL SILICON CARBIDE USES: Suction box covers. Fixed and moving turbine components. Seals, bearings. Ball valve parts. Hot gas flow liners. Heat exchangers. Semi conduction process equipment. Jewellery.
  • 13. Summary and future scope: Wear and friction characteristics of SiC ceramics change with microstructural modification while sliding. Wear resistance was improved by a hard interlocking network of elongated grains or grains with a high aspect ratio. Clear grain boundaries in SiC ceramics outperformed amorphous grain boundaries in terms of wear resistance. When SiC ceramics have a coarse grain structure, the transition from moderate to severe wear happens more quickly than when the grain structure is fine. Doping elements alter the kinetics of tribochemical reactions, resulting in various friction and wear characteristics.
  • 14. Summary and future scope: The majority of research used ambient temperature mechanical and microstructural properties of SiC ceramics to predict high temperature wear behaviour, however the influence of microstructural and mechanical features at selected temperatures should be addressed when assessing actual potential. Future research into the influence of microstructural or mechanical properties at low temperatures will look into the possibility of SiC ceramics and composites for usage in space or maritime applications.
  • 15. REFERENCES: 1. G. Roewer, U. Herzog, K. Trommer, E. Muller, and S. Fruhauf, “Silicon Carbide–A Survey of Synthetic Approaches, Properties and Applications,” Struct. Bond., 101 59-135 (2002). 2. B. V. M. Kumar, Y.-W. Kim, D. S. Lim, and W. S. Seo, “Influence of Small Amount of Sintering Additives on Unlubricated Sliding Wear Properties of SiC Ceramics,” Ceram. Int., 37 [8] 3599-608 (2011). 3. N. P. Padture, “In Situ-Toughened Silicon Carbide,” J. Am. Ceram. Soc., 77 519-23 (1994). 4. P. T. B. Shaffer, “A Review of the Structure of Silicon Carbide,” Acta Cryst., B, 25 477-88 (1969). 5. H. P. Iwata, U. Lindefelt, S. Oberg, and P.R. Briddon, “Stacking Faults in Silicon Crabides,” Phys. B, 340-342 165-70 (2003). 6. Y. M. Tairov and V. F. Tsvetkov, "Investigation of Growth Processes of Ingots of Silicon Carbide Single Crystals," J. Crys. Growth, 43 [2] 209-12 (1978). 7. A. J. Van Bommel, J. E. Crombeen, and A. V. Tooren, “Leed and Auger Electron Observations of the SiC (0001) Surface,” Surf. Sci., 48 463-72 (1975). 8. A. Taylor and D. S. Laidler, “The Formation and Crystal Structure of Silicon Carbide,” Br. J. Appl. Phys., 1 [7] 174-81 (1950). 9. W. Wesch, “Silicon Carbide: Synthesis and Processing,” Nucl. Instrum. Meth. B, 116 305-21 (1996). 10. V. A. Izhevskyi, L. A. Genova, J. C. Bressiani, and A. H. A. Bressiani, “Silicon Carbide. Structure, Properties and Processing,” Ceramica, 46 4-13 (2000). 11. T. Hase, “Boron Transport and Change of Lattice Parameter during Sintering of β-SiC,” J. Am. Ceram. Soc., 63 [5- 6] 349-50 (1980). 12. K. Negita, “Effective Sintering Aids for Silicon Carbide Ceramics: Reactivities of Silicon Carbide with Various Additives,” J. Am. Ceram. Soc., 69 [12] C308-10 (1986). 13. D. Sciti, S. Guicciardi, and A. Bellosi, “Effect of Annealing Treatment on Microstructure and Mechanical Properties of Liquid-Phase Sintered Silicon Carbide,” J. Eur. Ceram. Soc., 21 621-32 (2001). 14. D. I. Cheong, J. Kim, and S. J. Kang, “Effect of Isothermal Annealing on the Microstructure and Mechanical Properties of SiC Ceramics Hot-Pressed with Y2O3 and Al2O3 Additions,” J. Eur. Ceram. Soc., 22 1321-27 (2002). 15. D. Sciti and A. Bellosi, “Effects of Additives on Densification, Microstructure and Properties of Liquid-Phase Sintered Silicon Carbide” J. Mater. Sci., 35 3849-55 (2000).
  • 16. REFERENCE: 16. G. Rixecker, I. Wiedmann, A. Rosinus, and F. Aldinger, “High-Temperature Effect in the Fracture Mechanical Behaviour of Silicon Carbide Liquid-Phase Sintered with AlN-Y2O3 Additives,” J. Eur. Ceram. Soc., 21 1013-19 (2001). 17. R. R. Lee and W. C. Wei, “Fabrication, Microstructure, and Properties of SiC–AlN Ceramic Alloys,” Ceram. Eng Sci. Proc., 11 [7-8] 1094-121 (1990). 18. S. G. Lee, Y.-W. Kim, and M. Mitomo, “Relationship between Microstructure and Fracture Toughness of Toughened Silicon Carbide Ceramics,” J. Am. Ceram. Soc., 84 1347-53 (2001). 19. H. J. Choi, J. G. Lee, and Y.-W. Kim, “Oxidation Behavior of Liquid-Phase Sintered Silicon Carbide with Aluminum Nitride and Rare-Earth Oxides (Re2O3, where Re =Y, Er, Yb),” J. Am. Ceram. Soc., 85 [9] 2281-86 (2002). 20. Y. Zhou, K. Hirao, Y. Yamauchi, and S. Kanzaki, “Tailoring the Mechanical Properties of Silicon Carbide Ceramics by Modification of the Intergranular Phase Chemistry and Microstructure,” J. Eur. Ceram. Soc., 22 2689-96 (2002). 21. D. Chen, X. F. Zhang, and R. O. Ritchie, “Effects of GrainBoundary Structure on the Strength, Toughness, and Cyclic-Fatigue Properties of a Monolithic Silicon Carbide,” J. Am. Ceram. Soc., 83 2079-81 (2000). 22. R. Yuan, J. J. Kruzic, X. F. Zhang, L. C. De Jonghe, and R. O. Ritchie, “Ambient to High Temperature Fracture Toughness and Cyclic Fatigue Behavior in Al Containing Silicon Carbide Ceramics,” Acta Mater., 51 6477-91 (2003). 23. P. F. Becher, “Microstructural Design of Toughened Ceramics,” J. Am. Ceram. Soc., 74 255- 269 (1991). 24. H. J. Choi, Y. -W. Kim, M. Mitomo, T. Nishimura, J. H. Lee, and D. Y. Kim, “Intergranular Glassy Phase Free SiC Ceramics Retains Strength at 1500o C,” Scripta Mater., 50 1203-7 (2004)