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Photo transistor
A.Vivetha MSc, Mphil, Bed.,
Assistant Professor of Physics
BonSecours College for Women
Phototransistor
Definition:
• A Phototransistor is a device that has the ability to
detect the level of the incident radiation and
accordingly change the flow of electric current
between emitter and collector terminal.
• It is a 3-layer semiconductor device that consists of
a light sensitive base region.
• It operates on the principle of Photoelectric
effect.
constructional structure of an NPN Phototransistor:
• The light is allowed to incident at the base collector
junction. Initially, phototransistors were fabricated
from silicon or germanium as their basic material that
resultantly provides homojunction structure.
• However, in recent times, these are constructed using
materials likes gallium or arsenide. Thereby, providing
a heterojunction structure. This is so because these
structures exhibit large conversion efficiency.
• They are more capable of changing light energy into
electrical energy as compared to homojunction
transistors.
• Phototransistors are mainly enclosed in a metallic
case that consists of the lens at the top in order to
gather the incident radiation.
Working of Phototransistor
• The operation of a phototransistor
depends on the intensity of radiation
falling at its base region.
• Its working is almost similar to a
normal transistor, however; the
variation lies in the input current that
drives the circuit. And in the case of a
phototransistor, the incident light
generates driving current.
In the circuit arrangement, we can clearly
see that the base region is kept
unconnected with the external supply
voltage and is used as the region for
radiation incidence.
Only the collector region is connected to
the positive side of the supply provided
along with emitter which is connected to
the negative side. However, the output is
taken at the emitter terminal of the
transistor.
• When no any light is allowed to incident at the base region of the
transistor, the due to temperature variation, movement of minority
carriers across the junction generates a very small current through
the transistor which is reverse saturation current basically termed as
dark current.
• Here, the base current IB is majorly 0.
• Here, in this case, the output current will be less as compared to
supply provided.
• But, when a certain amount of light energy is allowed to fall at the
base of the transistor, then electron and hole pair gets generated. The
applied electric field causes the electrons to move into the emitter
region, thereby generating large electric current.
•
Characteristics Curve of Phototransistor
• As the intensity of the light falling at the base
region is increased, the current through the
device also increases. Here, the generated
photocurrent majorly depends on the
illumination provided to the base.
• Here x-axis represents the voltage applied at the
collector-emitter terminal of the transistor and y-
axis represents the collector current that flows
through the device in milli amperes.
• As all the curves in the above figure are clearly
indicating that current increases with the
intensity of the radiation that falls at the base
region.
Applications of Phototransistor
• In light controlling and detection: As phototransistors are a
very sensitive light detector. Thus these are widely used in
light detection and controlling applications.
• In an indication of level and relays: The device finds its uses
in indicating the level of some systems because of their light
sensing ability.
• In counting systems: Phototransistors can be effectively
utilized in counting systems. As it has tremendous ability to
combinedly operate as photodiode and transistors.
• In punch card readers: Phototransistors widely finds its
applications in punch card reading.

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Photo transistor guide

  • 1. Photo transistor A.Vivetha MSc, Mphil, Bed., Assistant Professor of Physics BonSecours College for Women
  • 2. Phototransistor Definition: • A Phototransistor is a device that has the ability to detect the level of the incident radiation and accordingly change the flow of electric current between emitter and collector terminal. • It is a 3-layer semiconductor device that consists of a light sensitive base region. • It operates on the principle of Photoelectric effect.
  • 3. constructional structure of an NPN Phototransistor: • The light is allowed to incident at the base collector junction. Initially, phototransistors were fabricated from silicon or germanium as their basic material that resultantly provides homojunction structure. • However, in recent times, these are constructed using materials likes gallium or arsenide. Thereby, providing a heterojunction structure. This is so because these structures exhibit large conversion efficiency. • They are more capable of changing light energy into electrical energy as compared to homojunction transistors. • Phototransistors are mainly enclosed in a metallic case that consists of the lens at the top in order to gather the incident radiation.
  • 4. Working of Phototransistor • The operation of a phototransistor depends on the intensity of radiation falling at its base region. • Its working is almost similar to a normal transistor, however; the variation lies in the input current that drives the circuit. And in the case of a phototransistor, the incident light generates driving current.
  • 5. In the circuit arrangement, we can clearly see that the base region is kept unconnected with the external supply voltage and is used as the region for radiation incidence. Only the collector region is connected to the positive side of the supply provided along with emitter which is connected to the negative side. However, the output is taken at the emitter terminal of the transistor.
  • 6. • When no any light is allowed to incident at the base region of the transistor, the due to temperature variation, movement of minority carriers across the junction generates a very small current through the transistor which is reverse saturation current basically termed as dark current. • Here, the base current IB is majorly 0. • Here, in this case, the output current will be less as compared to supply provided. • But, when a certain amount of light energy is allowed to fall at the base of the transistor, then electron and hole pair gets generated. The applied electric field causes the electrons to move into the emitter region, thereby generating large electric current. •
  • 7. Characteristics Curve of Phototransistor • As the intensity of the light falling at the base region is increased, the current through the device also increases. Here, the generated photocurrent majorly depends on the illumination provided to the base. • Here x-axis represents the voltage applied at the collector-emitter terminal of the transistor and y- axis represents the collector current that flows through the device in milli amperes. • As all the curves in the above figure are clearly indicating that current increases with the intensity of the radiation that falls at the base region.
  • 8. Applications of Phototransistor • In light controlling and detection: As phototransistors are a very sensitive light detector. Thus these are widely used in light detection and controlling applications. • In an indication of level and relays: The device finds its uses in indicating the level of some systems because of their light sensing ability. • In counting systems: Phototransistors can be effectively utilized in counting systems. As it has tremendous ability to combinedly operate as photodiode and transistors. • In punch card readers: Phototransistors widely finds its applications in punch card reading.

Editor's Notes

  1. Definition:  A Phototransistor is a device that has the ability to detect the level of the incident radiation and accordingly change the flow of electric current between emitter and collector terminal. It is a 3-layer semiconductor device that consists of a light sensitive base region. It is basically a transistor whose action depends on the application of light. Hence named phototransistor. It operates on the principle of Photoelectric effect.
  2. Here, as we can see that the light is majorly allowed to incident at the base collector junction. Initially, phototransistors were fabricated from silicon or germanium as their basic material that resultantly provides homojunction structure. However, in recent times, these are constructed using materials likes gallium or arsenide. Thereby, providing a heterojunction structure. This is so because these structures exhibit large conversion efficiency. This implies they are more capable of changing light energy into electrical energy as compared to homojunction transistors. Phototransistors are mainly enclosed in a metallic case that consists of the lens at the top in order to gather the incident radiation.
  3. The operation of a phototransistor depends on the intensity of radiation falling at its base region. Its working is almost similar to a normal transistor, however; the variation lies in the input current that drives the circuit. And in the case of a phototransistor, the incident light generates driving current. The figure below represents the biasing arrangement of a phototransistor:
  4. In the circuit arrangement, we can clearly see that the base region is kept unconnected with the external supply voltage and is used as the region for radiation incidence. Only the collector region is connected to the positive side of the supply provided along with emitter which is connected to the negative side. However, the output is taken at the emitter terminal of the transistor.
  5. When no any light is allowed to incident at the base region of the transistor, the due to temperature variation, movement of minority carriers across the junction generates a very small current through the transistor which is reverse saturation current basically termed as dark current. Here, the base current IB is majorly 0. Here, in this case, the output current will be less as compared to supply provided. But, when a certain amount of light energy is allowed to fall at the base of the transistor, then electron and hole pair gets generated. The applied electric field causes the electrons to move into the emitter region, thereby generating large electric current.
  6. Here x-axis represents the voltage applied at the collector-emitter terminal of the transistor and y-axis represents the collector current that flows through the device in mill amperes. As all the curves in the above figure are clearly indicating that current increases with the intensity of the radiation that falls at the base region.
  7. Applications of Phototransistor The applications of phototransistors are as follows: In light controlling and detection: As phototransistors are a very sensitive light detector. Thus these are widely used in light detection and controlling applications. In an indication of level and relays: The device finds its uses in indicating the level of some systems because of their light sensing ability. In counting systems: Phototransistors can be effectively utilized in counting systems. As it has tremendous ability to combinely operate as photodiode and transistors. Thus, failure of supply will not cause much adverse effects on the system. In punch card readers: Phototransistors widely finds its applications in punch card reading.