Phototransistors are semiconductor devices that convert light signals into amplified electric signals. They consist of three regions - emitter, collector, and base - and function similarly to bipolar transistors, using the photoelectric effect to generate and separate electron-hole pairs when light is incident on the base or collector. Phototransistors offer high sensitivity, reliability, and temporal stability, making them well-suited for use as light detectors in control and automation systems.
Phototransistors convert light into electrical signals, possess internal gain, and have high sensitivity and reliability. Key parameters include luminous sensitivity, spectral response, and time constant.
Phototransistors are solid-state devices with high sensitivity compared to photodiodes. They provide analog or digital outputs and can be used with various light sources.
IREDs are light sources in the near-IR spectrum, compatible with phototransistors, featuring low power consumption and long life. They emit wavelengths that match silicon photodetectors.
Thank you speech from G. Poojith, concluding the discussion on phototransistors and IREDs.
PHOTO TRANSISITORS
• Ajunction transistor that may have only collector and
emitter leads or also a base lead, with the base
exposed to light through a tiny lens in the housing;
collector current increases with light intensity, as a
result of amplification of base current by the
transistor structure.
3.
• A transistor,usually bipolar, in which minority carriers are
injected on the basis of an internal photoelectric effect.
Phototransistors are used to convert light signals into amplified
electric signals
• A phototransistor consists of a single-crystal Ge or Si
semiconductor wafer in which three regions are produced by
means of special technological processes. As in a conventional
transistor, the regions are called the emitter, collector, and
base; as a rule, the base has no lead
5.
• The crystalis placed in a housing with a transparent window. A
phototransistor is connected to an external circuit in the same
way as a bipolar transistor with a common-emitter connection
and a zero base current. When light is incident on the base or
collector, charge-carrier pairs (electrons and holes) are
generated in that region; the carrier pairs are separated by the
electric field in the collector junction.
• As a result, the carriers accumulate in the base region, causing
a reduction of the potential barrier in the emitter junction and
an increase, or amplification, of the current across the
phototransistor in comparison with the current that is due only
to the migration of carriers generated directly by the action of
the light
6.
• As withother photoelectric devices, such as photocells and
photodiodes, the main parameters and characteristics of phototransistors are the luminous sensitivity, spectral response, and
time constant. The luminous sensitivity is the ratio of the
photoelectric current to the incident luminous flux. For the
best specimens of phototransistors—for example, diffused
planar devices—the luminous sensitivity may be as high as 10
amperes per lumen
7.
• The spectralresponse, which is the sensitivity to
monochromatic radiation as a function of wavelength, defines
the long-wavelength limit for the use of a particular
phototransistor; this limit, which depends primarily on the
width of the forbidden band of the semiconductor material, is
1.7 micrometers for germanium and 1.1 micrometers for
silicon.
• The time constant characterizes the inertia of a phototransistor
and does not exceed several hundred microseconds. In
addition, a phototransistor is characterized by the photoelectric
gain, which may be as high as 102–103
8.
• The highreliability, sensitivity, and temporal stability
of phototransistors, as well as their small size and
relatively simple design, have led to their extensive
use in control and automation systems, for example,
as light detectors and as components of optoisolators
(see RADIATION DETECTOR, OPTICAL
DETECTOR, and OPTRON). Field-effect
phototransistors, which are similar to field-effect
transistors, were developed in the 1970’s.
9.
Why Use Phototransistors?
•Phototransistors are solid state light detectors that possess internal
gain. This makes them much more sensitive than photodiodes of
comparably sized area. These devices can be used to provide either
an analog or digital output signal. Low cost visible and near-IR
photo detection
• Available with gains from 100 to over 100,000
• Moderately fast response times
• Available in a wide range of packages including epoxy
coated, transfer molded, cast, hermetic packages and in chip form
• Usable with almost any visible or near infrared light source such
as LEDs, neon, fluorescent, incandescent bulbs, laser, flame
sources, sunlight, etc....
10.
Why Use IREDs?
•IRED's are solid state light sources which emit light in the near-IR part of the
spectrum. Because they emit at wavelengths which provide a close match to the
peak spectral response of silicon photo detectors both GaAs and Ga Al As
LEDs are often used with phototransistors and photodarlingtons. Key
characteristics and features of these light sources include:
• Long operating lifetimes
• Low power consumption, compatible with solid state electronics
• Narrow band of emitted wavelengths
• Minimal generation of heat
• Available in a wide range of packages including epoxy coated, transfer
molded, cast and hermetic packages
• Low cost
• Can be specially selected to meet the requirements of your particular
application