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SILICON ON INSULATOR
1. DEPARTMENT OF ELECTRONICS AND
INSTRUMENTATION ENGINEERING
Presentation on
SILICON ON INSULATOR POWER DEVICES
UNDER THE GUIDANCE OF SUBMITTED BY
ER. NAVNEET PATHAK
MANISH KUSHWAHA
ROLL NO-151351033010
2. CONTENT
• INTRODUCTION
• WHAT IS SILICON ON INSULATOR
• HISTORY OF SOI
• MANAFACTURING OF SOI DEVICES
• SILICON ON INSULATOR POWER DEVICES
• WHY SOI
3. INTRODUCTION
SILICON: Silicon is a chemical element
that is present in sand and glass and
which is a best known semiconductor
material in electronic components.
INSULATOR: A material that does not
easily transmit energy such as electric
current or heat.
4. WHAT IS SILICON ON INSULATOR
• Silicon on insulator technology refers to the
use of layered silicon-insulator-silicon
substrate in place of conventional silicon
substrate in semiconductor manufacturing.
5. • In this type of devices silicon junction is above an
insulator typically silicon dioxide
• SOI microchips are perfect for mobile devices
6. Silicon on insulator technology (SOI) is developed
by
The technique uses pure crystal silicon and silicon
oxide to produce integrated circuit which are also
known as IC’S and also microchips
7. HISTORY
• SOI Technology comes in mainstream in 2000
When IBM began to use SOI in its high end RS-
64 “ISTAR” Power PC-AS Microprocessor.
8. • Gaming console manufacturers like XBOX 360
PLAYSTATION 3,WII uses the 90 nm power
architecture based processors to enhance the
user experience.
9. AMD stands for Advance micro device.
AMD started this legendary technology in
2001 in its 130 nm single core processor.
10. MANUFACTURING OF SOI DEVICES
There are three basic techniques of
manufacturing SOI
1. SIMOX
SIMOX was the dominant technology in the
last decade
SIMOX-Separation by implantation of oxygen
uses an oxygen ion beam implantation
process followed by high temperature
annealing to create a buried SIO2 layer.
11.
12. 2. FIPOS: Full isolation by oxidized porous silicon
, an anodic reaction is use to convert a
particular region (predefined by p-type
doping) of the SI layer into porous silicon
13. 3 . WAFER BONDING – The insulating layer is
formed by directly bonding oxidized silicon
with a second substrate. The majority of the
second substrate is subsequently removed,
the remnants forming the topmost Si layer.
14. SILICON ON INSULATOR POWER DEVICES
FULLY DEPLETED SILICON ON INSULATOR POWER
DEVICES : These devices does not change the
fundamental geometry of the transistor the innovation
lies in adding a thin layer of insulator called buried
oxide positioned just below the channel eliminating
the need to add dopents to the channel making it fully
depleted
15. • FD-SOI has a shorter effective channel . The
shorter channel reduces the effective time of
electrons flow.
• These devices have both modes high
performance and lower power.
16. • Due to the presence of the silicon layer in body
biasing it acts like a vertical double gate
transistor
• Vertical double gate transistor gives a concept of
making new processors , as different voltage is
applied to the different terminals which
effectively change the characteristics.
17. It is a planar process reuses 90% of the
process steps resulting the over all
manufacturing time is 15% less as compared
to the bulk transistors and reducing the
manufacturing cost.
18. FD SOI is an invention that will allow the
semiconductor industry continue to deliver
an even better experience to consumers on
next gen digital devices.
19. THE FD-SOI has lower variability because of no dopents
being involved
As a result of this lower power consumption is awarded.
Lower power consumption means less heat is evolve and
the FD-SOI remains cooler
20. WHY SOI
• SOI allowed the continued miniaturization of
microelectronic devices.
• In general, an SOI-based process may be
implemented without special equipment or
significant retooling of an existing factory.
• Inherently radiation hardened ( resistant to
soft errors ), thus reducing the need for
redundancy.
• Reduced antenna issues.
