5. Background
• Thin film deposition
• Metal Organic Chemical Vapor Deposition
Application
- Solar cell
- Power chip
Process condition
- High temperature
- High vacuum
Deposition
Chemical Vapor Deposition
MOCVD
PECVD
Physical Vapor Deposition
Evaporation
Sputtering
Vapor
Deposition
Liquid Phase
Epitaxy
Wafer
Curvature
Growth
Rate
Film
Uniformity
Wafer
Temperature
Source: itri
6. Literatures review (Growth rate & Temperature)
• Thin film growth rate measurement
Quartz crystal microbalance
a
Reflectance interferometry
b
• Temperature measurement
Two-color and Multi-wavelength pyrometry
c
a: C. S. Lu and O. Lewis, “Investigation of film ‐ thickness determination by oscillating quartz
resonators with large mass load”, 1972.
b: J.A. Dobrowolski, “Optical Properties of Thin Films and Coating” Chap.42 of Handbook of Optics,
McGraw-Hill, Inc, 1995.
c: B. Müller, U. Renz, “Development of a fast fiber-optic two-color pyrometer for the temperature
measurement of surfaces with varying emissivities”, Review of Scientific Instruments, 2001.
Source: ADVANTEST
Source: c
12. Measurement of Growth rate
• Index of refraction and growth rate
nfsolven
nTn
w
G
24
nGw
4
sL RRR 0
T
w
2
2
2
2
0
2
0
)(
)(
)(
)(
s
s
L
nn
nn
nn
nn
R
021214214122f(n)
222234
LsssLssssLsLL RnnnnRnnnnnRnnRnR
)cos(21
)cos(2
00
002
ss
ss
RRRR
RRRR
rR
nGtnd
22
Substrate
Light Ii
Reflected
Light Io
2
22
2
2
0
2
0
2
0
02
00
)(
)(
)(
)(
s
s
s
s
ss
nn
nn
NN
NN
rR
nn
nn
NN
NN
rR
13. Blackbody Radiation Theorem
0 1000 2000 3000 4000 5000 6000 7000
0
5
10
15
20
25
30
600℃
700℃
800℃
900℃
1000℃
1100℃
1200℃
(nm)
E
b
(Wm-2
sr-1
nm-1
)
• Planck’s law
1
1
,
2
5
1
T
cb
e
c
TE
• Kirchhoff’s law
• Real-body radiation
TETE breal ,,
1
1
1c
2c
: Planck’s first constant
: Planck’s second constant
: Absorption
: Reflectance
: Transmittance
: Emissivity
14. Measurement of temperature
• Opaque & Specular substrate
1
T
=
1
Tcal
-
l
c2
ln
s
scal
R 1
• Temperature equation
• Thermal signal
s = C0 eEb = C0 e
c1
l5
exp -
c2
lT
æ
è
ç
ö
ø
÷
r
A
r
s
Filter
Detector
0C : System constant
cal: Calibration parameter
19. ZnO thin film deposition
Index of refraction Thin film thickness (mm)
Reference Measured Reference Measured
1.998 1.96 0.2727 0.272*
Relative difference: 2% Relative difference: 0.3%
Table. 1 Measurement results of the ZnO thin film
Measured thickness = Growth rate × depositing time
= 0.1515 Å /s × 5 hr
• The ZnO thin film deposit on the silicon wafer
• Monitor the growth rate, refractive index, thickness of ZnO
ZnO deposit on the wafer by radio-frequency
sputter
Reflectance Curve of ZnO film
20. Wafer temperature measurement
CP 400 nm 940 nm
(a). (b). (b)-(a) (c). (c)-(a)
455.4 450.5 -4.9 456.5 1.1
542.1 540.4 -2.3 541.3 -0.8
615.5 615.1 -0.4 615.7 0.2
701.7 702.0 0.3 701.8 0.1
781.6 780.8 -0.8 781.2 -0.4
858.5 858.6 0.1 858.6 0.1
943.0 943.2 0.2 943.1 0.1
Table. 2 The Measurement results and compare with
commercial pyrometer, (a) measured by commercial pyrometer,
CP, (b) by 400 nm NBF, and (c) by 940 nm NBF. (unit: °C).
Measurement system set on the heating chamber
600 650 700 750 800 850 900 950 1000
-3
-2
-1
0
1
2
3
Time(s)
Temperature(℃)
System resolution:0.67 ℃ at 580 ℃
• Heating single silicon wafer by the heating
vacuum chamber
• Monitor the wafer surface temperature and
analysis the system resolution
26. Conclusion
• An in-situ monitoring system for MOCVD process
• Performance(compared with commercial pyrometer)
Thin film parameters measurement
» Relative difference of refractive index < 2%
» Relative difference of thickness < 0.3%
Temperature measurement
» Relative difference is less than 1%
» Measurement limit:above 450 ℃
Wafer curvature measurement
» Relative difference is about 1%