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5 sedra ch 05 mosfet
1. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 19/21/2020
MOS Field-Effect
Transistors (MOSFETs)
Chapter 5
2. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 29/21/2020
MOS Field Effect Transistors
1. Device Structure and Physical Operation
2. Current-Voltage Characteristics
3. MOSFET Circuits at DC
4. Applying the MOSFET in Amplifier Design
5. Small Signal Operations and Models
6. Basic MOSFET Amplifier Configurations
7. Biasing in MOSFET Amplifier Circuits
8. Discrete-Circuit MOS Amplifiers
9. The Body Effect and other Topics
3. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 39/21/2020
MOS Field Effect Transistors
1. Device Structure and Physical Operation
2. Current-Voltage Characteristics
3. MOSFET Circuits at DC
4. Applying the MOSFET in Amplifier Design
5. Small Signal Operations and Models
6. Basic MOSFET Amplifier Configurations
7. Biasing in MOSFET Amplifier Circuits
8. Discrete-Circuit MOS Amplifiers
9. The Body Effect and other Topics
4. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 49/21/2020
DEVICE STRUCTURE AND
PHYSICAL OPERATION
5. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 59/21/2020
Device Structure
NMOS
npn BJT
6. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 69/21/2020
Device Structure
NMOS
npn BJT
7. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 79/21/2020
Operation with Zero Gate Voltage
8. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 89/21/2020
Creating a Channel for Current Flow
GS tv V
𝑣 𝑜𝑣 = 𝑣 𝐺𝑆 − 𝑉𝑡
𝑄 = 𝐶𝑣 𝑂𝑉
𝐶 𝑜𝑥 =
𝜀 𝑜𝑥
𝑡 𝑜𝑥
Oxide
Permittivity
Thickness
𝐶 = 𝐶 𝑜𝑥 𝑊𝐿
Unipolar
9. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 99/21/2020
Applying a Small vDS
𝑖 𝐷 = 𝜇 𝑛
𝑄
𝐿
𝐸
𝑖 𝐷 = 𝜇 𝑛
𝐶 𝑂𝑥 𝑊𝐿𝑣 𝑂𝑉
𝐿
𝑣 𝐷𝑆
𝐿
𝑖 𝐷 = 𝜇 𝑛 𝐶 𝑂𝑥
𝑊
𝐿
𝑣 𝑂𝑉 𝑣 𝐷𝑆
10. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 109/21/2020
Applying a Small vDS 𝑖 𝐷 = 𝜇 𝑛 𝐶 𝑂𝑥
𝑊
𝐿
𝑣 𝑂𝑉 𝑣 𝐷𝑆
𝑘 𝑛
′ = 𝜇 𝑛 𝐶 𝑂𝑥
𝑘 𝑛 = 𝑘 𝑛
′
𝑊
𝐿
𝑖 𝐷 = 𝑘 𝑛 𝑣 𝑂𝑉 𝑣 𝐷𝑆
1DS
DS n OV
D
v
r k v
i
1
DS
n OV
r
k v
11. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 119/21/2020
Applying a Small vDS
vOV
12. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 129/21/2020
Operation as vDS Is Increased
𝑖 𝐷 = 𝑘 𝑛 𝑣 𝑂𝑉 −
1
2
𝑣 𝐷𝑆 𝑣 𝐷𝑆
13. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 139/21/2020
Operation as vDS Is Increased
14. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 169/21/2020
Operation as vDS Is Increased
𝑖 𝐷 = 𝑘 𝑛 𝑣 𝑂𝑉 −
1
2
𝑣 𝐷𝑆 𝑣 𝐷𝑆
15. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 179/21/2020
Triode Region:
Saturation Region:
1
2
D n OV DS DSi k v v v
21
2
D n OVi k v
OV GS Tv v V '
n n
W
k k
L
Derivation of the iD-vDS Relationship
DS OVv v
DS OVv v
n OxC
W
L
16. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 199/21/2020
Operation as vDS Is Increased
17. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 279/21/2020
The p-Channel MOSFET
18. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 289/21/2020
The Complementary MOS or CMOS
19. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 299/21/2020
Operating the MOS Transistor in the Sub-threshold
Region
GSv
Di e
20. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 309/21/2020
MOS Field Effect Transistors
1. Device Structure and Physical Operation
2. Current-Voltage Characteristics
3. MOSFET Circuits at DC
4. Applying the MOSFET in Amplifier Design
5. Small Signal Operations and Models
6. Basic MOSFET Amplifier Configurations
7. Biasing in MOSFET Amplifier Circuits
8. Discrete-Circuit MOS Amplifiers
9. The Body Effect and other Topics
21. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 319/21/2020
CURRENT-VOLTAGE
CHARACTERISTICS
22. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 329/21/2020
Circuit Symbols
23. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 359/21/2020
The iD-vDS Characteristics
24. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 369/21/2020
The iD-vDS Characteristics
25. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 379/21/2020
The iD-vGS Characteristics
26. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 389/21/2020
The iD-vGS Characteristics
21
2
D n OVi k v
Sat
27. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 419/21/2020
The iD-vGS Characteristics
Sat
28. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 429/21/2020
The iD-vGS Characteristics
Channel-length Modulation
29. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 439/21/2020
The iD-vGS Characteristics
30. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 479/21/2020
Finite Output Resistance in Saturation
21 1
2 1
D n OVi k v
L
L
' 21
2
D n OV
W
i k v
L L
21
1 ; 1
2
D n OV
L L
i k v
L L
'
DSL v
'
21
1
2
D n DS OVi k v v
L
'
L
21
1
2
D n OV DSi k v v
0 1D D DSi I v
31. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 489/21/2020
The Effect of vDS on iD
0 1D D DSi I v
1
AV
'
A AV V L
'
:5 50A
V
V
m
0 1 DS
D D
A
v
i I
V
2
0
1
2
D n OVI k v
Slope 0DI 0D
A
I
V
32. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 499/21/2020
Large-signal Equivalent Circuit Model
0Di
33. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 509/21/2020
Large-signal Equivalent Circuit Model
1
ConstantGS
D
O
DS V
di
r
dv
0
A
O
D
V
r
I
2
0
1
2
D n OVI k VA
D
V
I
0 1 DS
D D
A
v
i I
V
34. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 519/21/2020
Circuit Symbols
Characteristics of the p-Channel MOSFET
35. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 529/21/2020
Circuit Symbols
Characteristics of the p-Channel MOSFET
36. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 539/21/2020
Characteristics of the p-Channel MOSFET
tV ve@
SG tv V
DS OVv vTriode Region:
Saturation Region:
OV GS tv v V
DS OVv v
1
2
D p OV DS DSi k v v v
'
p p
W
k k
L
21
1
2
DS
D p OV
A
v
i k v
V
37. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 549/21/2020
Terminal Voltage-Region Relationship
38. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 559/21/2020
MOS Field Effect Transistors
1. Device Structure and Physical Operation
2. Current-Voltage Characteristics
3. MOSFET Circuits at DC
4. Applying the MOSFET in Amplifier Design
5. Small Signal Operations and Models
6. Basic MOSFET Amplifier Configurations
7. Biasing in MOSFET Amplifier Circuits
8. Discrete-Circuit MOS Amplifiers
9. The Body Effect and other Topics
39. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 569/21/2020
MOSFET CIRCUITS AT DC
40. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 579/21/2020
Triode Region:
Saturation Region:
1
2
D n OV DS DSi k v v v
OV GS Tv v V
Derivation of the iD-vDS Relationship
'
n n
W
k k
L
21
1
2
D n OV DSi k v v
41. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 619/21/2020
Example 5.3
0.4
0.5
?
?
3.2k
0.7tV
0
DR 5
2.5 0.5
0.4
5
S SR V : DS tQ V V Sat
21
1
2
D n OV DSi k v v
21
0.4 3.2
2
OVv
0.5 0.5OVv
0.7 0.5 1.2GSv
1.2 2.5 1.3
3.25
0.4 0.4
SR
42. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 639/21/2020
Example 5.4
?i v
Saturation
21
2
D n OVi k v
0
21
2
D n ti k v V
Diode-connected transistor
43. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 679/21/2020
Example 5.5
1k
1tV DSR
1
2
D n OV DS DSi k v v v
0.395Di mA
12.4 k
Triode
?
?
VD = + 0.1 V
DS
D
V
I
?
= 253 Ω
2 Unkowns ← 2 Eqns
44. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 749/21/2020
Example 5.6
21
1
2
D n OV DSI k v v
21
1 5 6 1
2
D DI I
0.5 or 0.89DI mA mA
0.5DI mA
? ?
?
?
?
?
?𝜆 = 0
𝑘 𝑛 = 1 𝑚𝐴/𝑉2
𝑉𝑡 = 1𝑉
45. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 759/21/2020
Example 5.7
1k
0
1tV
?
?
?
Sat
21
1
2
D n OV DSi k v v
21
2
D n OVi k v 0.5 mA
1OVV V
2GSV V
maxDV 8DR k
Sat, Largest RD?
6DR k
3GV V
1
2
G
G
R
R
2
3
M
M
2
3
3 1 4V
46. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 769/21/2020
Exercise D5.14
?
𝑉𝑂𝑉 = 0.6 V
𝑉𝑡𝑝 = −0.4 V
𝑘 𝑝
′ = 0.1mA/V
𝑊
𝐿
=
10𝜇𝑚
0.18𝜇𝑚
47. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 779/21/2020
Example 5.8
48. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 789/21/2020
Example 5.8
1k
0
1tV
?
? ?
0
2.5
2.5
02.52.5
49. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 809/21/2020
MOS Field Effect Transistors
1. Device Structure and Physical Operation
2. Current-Voltage Characteristics
3. MOSFET Circuits at DC
4. Applying the MOSFET in Amplifier Design
5. Small Signal Operations and Models
6. Basic MOSFET Amplifier Configurations
7. Biasing in MOSFET Amplifier Circuits
8. Discrete-Circuit MOS Amplifiers
9. The Body Effect and other Topics
50. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 819/21/2020
APPLYING THE MOSFET IN
AMPLIFIER DESIGN
51. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 839/21/2020
Ov
Di
Obtaining a Voltage Amplifier
DSDD
D D
vV
R R
DD D DV R i DSv
Transconductance Amplifier
52. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 849/21/2020
The Voltage Transfer Characteristics
21
2
D n GS ti k v V
Ov DD D DV R i DSv
21
2
o DD n D GS tv V k R v V
| |DS B GS B tV V V
2 1 1
| n D DD
GS B t
n D
k R V
V V
k R
53. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 859/21/2020
Biasing the MOSFET to Obtain a Linear Amplifier
21
2
o DD n D GS tv V k R v V
GS GS gsv V v t
54. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 869/21/2020
| I IQ
O
V v v
I
dv
A
dv
Operation as a Linear Amplifier
?
55. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 909/21/2020
The Small-Signal Voltage Gain
| I IQ
O
V v v
I
dv
A
dv
21
2
o DD n D GS tv V k R v V D IQ tR k V V D OVR kVVA
56. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 919/21/2020
| I IQ
O
V v v
I
dv
A
dv
21
2
D n OVI k V
D OVR kV
1
2
1
2
OV
OV
V
V
2 D D
V
OV
R I
A
V
2 RD
V
OV
V
A
V
max
2 DD
V
OV
V
A
V
The Small-Signal Voltage Gain
57. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 929/21/2020
Determining VTC by Graphical Analysis
DSDD
D
D D
vV
i
R R
58. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 939/21/2020
Determining VTC by Graphical Analysis
59. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 949/21/2020
Operation as a Linear Amplifier
60. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 959/21/2020
Operation as a Linear Amplifier
61. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 969/21/2020
MOS Field Effect Transistors
1. Device Structure and Physical Operation
2. Current-Voltage Characteristics
3. MOSFET Circuits at DC
4. Applying the MOSFET in Amplifier Design
5. Small Signal Operations and Models
6. Basic MOSFET Amplifier Configurations
7. Biasing in MOSFET Amplifier Circuits
8. Discrete-Circuit MOS Amplifiers
9. The Body Effect and other Topics
62. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 979/21/2020
SMALL SIGNAL
OPERATION AND
MODELING
63. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 999/21/2020
The DC Bias Point
21
2
D n OVi k v
D DD D DV V I R
G D tV V V
Conceptual Common Source Circuit
64. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1009/21/2020
GS GS gsv V v
21
2
D n GS ti k v V
21
2
D n gs GS ti k v V V
2 21 1
2 2
D n OV n OV gs n gsi k V k V v k v
21
2
D n gs OVi k v V
D D di I i
The Signal Current in the Drain Terminal
21
2
d n OV gs n gsi k V v k v
To achieve linearity:
21
2
n gs n OV gsk v k V v=
2gs OVv V=
d n OV gsi k V v
m n OVg k V
d m gsi g v
65. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1019/21/2020
| GS GS
D
m v v
GS
di
g
dv
The Signal Current in the Drain Terminal
66. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1029/21/2020
| GS GS
D
m v V
GS
di
g
dv
21
2
| GS GS
n OV
m v V
GS
d k v
g
dv
| |GS GS GS GS
OV
m n OV v V n OV v V
GS
d v
g k V k V
dv
m n OVg k V
The Signal Current in the Drain Terminal
67. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1039/21/2020
D DD D Dv V i R
D d DD D d DV v V I i R
d d Dv i R
d m gs Dv g v R
d
V m D
gs
v
A g R
v
The Voltage Gain
68. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1049/21/2020
minGSv tV
The Voltage Gain
tV
Cut off
maxGSv
69. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1059/21/2020
Separating the DC Analysis and the Signal Analysis
Under the small-signal approximation:
ac is superimposed on dc.
Apply superposition
Solution: dc then ac
70. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1069/21/2020
Small-Signal Equivalent-Circuit Models
71. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1079/21/2020
Small-Signal Models for the MOSFET
72. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1099/21/2020
||d
V m D O
gs
v
A g R r
v
The Voltage Gain
di
di
73. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1109/21/2020
D
m
GS
di
g
dv
OVD
OV GS
dvdi
dv dv
D
OV
di
dv
The Trans-Conductance gm
m n OVg k V
21
2
D n OVI k V
2m n Dg k I
2 D
OV
n
I
V
k
2
2 D
n
OV
I
k
V
2 D
m
OV
I
g
V
74. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1119/21/2020
Example 5.10
?VA
?inR
_max ?iv
1.5tV V
0.25nk
50AV V
75. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1129/21/2020
DC Solution
Neglect Modulation
21
1
2
DS
D n OV
A
V
I k V
V
15D D DV R I 1.06DI mA4.4DV V
21
2D n OVI k V
21
1.5
8
D DI V
Example 5.10 1.5tV V
0.25nk
50AV V
76. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1139/21/2020
AC Solution
Example 5.10 1.5tV V
0.25nk
50AV V
77. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1149/21/2020
AC Solution
m n OVg k V 0.25 4.4 1.5 0.725 /mA V
A
o
D
V
r
I
50
1.06
47 k
Example 5.10
? ?
1.5tV V
0.25nk
50AV V
78. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1159/21/2020
AC Solution
10 1047
10 M
=4.52PR
VA iv ov
vA
o
i
v
v
m gs Pg v R
Example 5.10
?
gsv
m Pg R 0.725 4.52 3.3
m gs P
gs
g v R
v
Superposition
79. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1179/21/2020
AC Solution
10 1047
10 M
=4.52PR
Example 5.10
inR i
i
v
i
i
i o
G
v
v v
R
1
1
G
o
i
R
v
v
1
1
G
v
R
A
i
G
i o
v
R
v v
1
4.3
in GR R 2.33M
80. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1199/21/2020
Largest Allowable Input Signal Vi
For linearity:
Example 5.10
No Triode: D G tv v V
_min _maxD G tv v V
D v i G i tV A v V v Vˆ ˆ
ˆ ˆ3.3 1.5i iv v
ˆ 0.34iv V
G D DV I V
2 OVV
5
OVV
gsv 0.58
4.4 1.5
5
No Cut off: G S tv v V
gs tv V
81. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1209/21/2020
The T Equivalent-Circuit Model
82. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1269/21/2020
Drain-to-Source Resistance ro
The T Equivalent-Circuit Model
83. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1279/21/2020
Example 5.11
𝑅𝑖𝑛 =
1
𝑔 𝑚
𝐴 𝑉 = 𝑔 𝑚 𝑅 𝐷
84. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1319/21/2020
Small-Signal Equivalent Circuit Model
85. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1329/21/2020
Small-Signal Equivalent Circuit Model
86. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1379/21/2020
MOS Field Effect Transistors
1. Device Structure and Physical Operation
2. Current-Voltage Characteristics
3. MOSFET Circuits at DC
4. Applying the MOSFET in Amplifier Design
5. Small Signal Operations and Models
6. Basic MOSFET Amplifier Configurations
7. Biasing in MOSFET Amplifier Circuits
8. Discrete-Circuit MOS Amplifiers
9. The Body Effect and other Topics
87. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1389/21/2020
BASIC MOSFET AMPLIFIER
CONFIGURATIONS
88. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1399/21/2020
The Basic Configurations
89. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1409/21/2020
The Basic Configurations
90. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1419/21/2020
Characterizing Amplifiers
Unilateral
91. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1439/21/2020
inR
vA / / / /m o D Lg r R R
OutR / /o Dr R
vG vA
The Common-Source (CS) Amplifier
↑↑
↑×
↑
CD for ↓ 𝑅 𝑂𝑢𝑡
Voltage Amplifier
92. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1449/21/2020
The Common-Source (CS) Amplifier
Performing the Analysis Directly on the Circuit Diagram
93. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1459/21/2020
inR
0vA
1
D
S
m
R
R
g
OutR DR
↓
𝑟0 is negligible for Discrete Ciruits
The Common-Source Amplifier with a Source Resistance
gsv
1
1
m
i
S
m
g
v
R
g
1
1
i
m S
v
g R
Controls 𝑣𝑔𝑠
1
m D
m S
g R
g R
−
𝑅 𝐷𝑟𝑎𝑖𝑛_𝑇𝑜𝑡𝑎𝑙
𝑅 𝑆𝑜𝑢𝑟𝑐𝑒_𝑇𝑜𝑡𝑎𝑙
94. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1469/21/2020
1
mginR
0vA
1
D
m
R
g
OutR DR
𝑟0 is negligible for Discrete Ciruits
The Common-Gate Amplifier
m Dg R
↓
vG
1
1
m
m D
Sig
m
g
g R
R
g
1
m D
m Sig
g R
g R
Similar to CS
Similar to CS
↓↓ Limited Applications
Amplify ↑ 𝑓 signal through ↓ 𝑅 coaxial cables
95. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1479/21/2020
The Common-Drain Amplifier or Source-Follower
96. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1489/21/2020
The Common-Drain Amplifier or Source-Follower
inR
OutR
1
|| O
m
r
g
vA
||
1
||
L O
L O
m
R r
R r
g
vG
1
mg
97. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1509/21/2020
MOS Field Effect Transistors
1. Device Structure and Physical Operation
2. Current-Voltage Characteristics
3. MOSFET Circuits at DC
4. Applying the MOSFET in Amplifier Design
5. Small Signal Operations and Models
6. Basic MOSFET Amplifier Configurations
7. Biasing in MOSFET Amplifier Circuits
8. Discrete-Circuit MOS Amplifiers
9. The Body Effect and other Topics
98. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1519/21/2020
BIASING IN MOS
AMPLIFIER CIRCUITS
99. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1529/21/2020
Biasing in MOS Amplifier Circuits
• Fixing VG and Connecting a Resistance in the
Source
• Fixing VGS
• Using a Constant Current Source
• Using a Drain to Gate Feedback Resistor
100. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1539/21/2020
Large Variation in MOS Parameters
Fixing VGS
1. Manufacturing
2. Temperature
101. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1549/21/2020
Fixing VGS
102. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1559/21/2020
Fixing VG and Connecting a Resistance in the Source
Degeneration Resistance
Basic Arrangement
103. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1569/21/2020
Fixing VG and Connecting a Resistance in the Source
Reduced Variability
104. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1579/21/2020
Single Supply Practical Implementation
Rule of Thumb
105. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1589/21/2020
AC Coupling
106. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1599/21/2020
Two Supply Practical Implementation
Rule of Thumb
107. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1609/21/2020
?
?
Example 5.12
2
1 /k mA V
1tV V
?
Rule of Thumb
10
5
?
?
10
?10
21
2
D OVI kV
?7
8M
7M
0 1.5tV V
21
2
D GS tI k V V
0.455 0.5DI
0.045DI mA
0.045
% 100%
0.5
DI
% 9%DI
GS G S DV V R I
7 10GS DV I
21
7 10
2
D t DI k V I
0.455DI
% ?DI
108. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1619/21/2020
Using a Drain-to-Gate Feedback Resistor
DD GS D DV V I R
GS DD D DV V I R
-ve Feedback
↑ 𝐼 𝐷 →↓ 𝑉𝐺𝑆 →↓ 𝐼 𝐷
109. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1629/21/2020
Using a Constant-Current Source
?
21
2
D GS tI k V V
110. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1639/21/2020
?
2
1
1
2
D n GS tI k V V Q
12 D
GS t
n
I
V V
k
1Q DD SS GS
D
V V V
I
R
1
DD SS GS
D
V V V
R
I
Current Mirror
2'
2
2
1
2
Q D n GS t
W
I I k V V
L
2
Ref
1
W
I L
WI
L
111. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1659/21/2020
ICs use constant-current source biasing only!
112. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1669/21/2020
DISCRETE-CIRCUIT MOS
AMPLIFIERS
113. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1679/21/2020
Discrete-Circuit MOS Amplifiers
Amplifier Examples
MOS: Primarily used in IC’s
114. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1689/21/2020
The Common-Source Amplifier
Coupling
Isolates DC
biasing
from RL
and RSig
By Pass
Capacitor
Input
Coupling
Equivalent Circuit
115. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1699/21/2020
The Common-Source Amplifier Equivalent Circuit
116. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1709/21/2020
The Common-Source Amplifier Equivalent Circuit
117. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1719/21/2020
The Common-Source Amplifier Input Resistance
GRinR
118. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1729/21/2020
Out GR R
The Common-Source Amplifier Output Resistance
?
/ /o Dr R
119. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1739/21/2020
vA
The Common-Source Amplifier Voltage Gain
o
i
v
v
/ / / /m gs o D L
gs
g v r R R
v
/ / / /m o D Lg r R R
120. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1749/21/2020
/ /m o Cg r R
The Common-Source Amplifier Proper Voltage Gain
voA
121. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1759/21/2020
vG
The Common-Source Amplifier Overall Voltage Gain
o
sig
v
v
i o
sig i
v v
v v
G
v
G sig
R
A
R R
/ / / /G
m o C L
G sig
R
g r R R
R R
/ / / /G
v m o C L
G sig
R
G g r R R
R R
122. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1769/21/2020
The Common-Source Amplifier Current Gain
iA o
i
i
i
o
L
i
i
v
R
v
R
o i
i L
v R
v R
/ / / / G
m o C L
L
R
g r R R
R
123. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1779/21/2020
The Common-Source Amplifier Short Circuit
Current Gain
isA os
i
i
i
m gs
gs
i
g v
v
R
m Gg R
124. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1789/21/2020
The Common-Source Amplifier Alternative Analysis
1
mg
Or
125. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1799/21/2020
The Common-Source Amplifier with a Source
Resistance
Neglect for Simplicity
?
126. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1809/21/2020
The Common-Source Amplifier with a Source
Resistance
?
? RD
Source Degeneration
Resistance
127. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1819/21/2020
The Common-Source Amplifier with a Source
Resistance
128. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1829/21/2020
The Common-Source Amplifier with a Source
Resistance
VA
||
1
D L
S
m
R R
R
g
R
||
1
m D L
m S
g R R
g R
VOA
1
m D
m S
g R
g R
129. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1839/21/2020
The Common-Source Amplifier with a Source
Resistance
vG o
sig
v
v
i o
sig i
v v
v v
G
v
G sig
R
A
R R
/ /
1
m D LG
v
G sig m S
g R RR
G
R R g R
130. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1849/21/2020
The Common-Source Amplifier with a Source
Resistance
voG
1
G m D
G sig m S
R g R
R R g R
131. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1859/21/2020
The Common-Source Amplifier with a Source
Resistance
iA o
i
i
i
o
L
i
i
v
R
v
R
i
v
L
R
A
R
||
1
m D L G
i
m S L
g R R R
A
g R R
1
m D G
i
m S D L
g R R
A
g R R R
132. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1869/21/2020
The Common-Source Amplifier with a Source
Resistance
isA
1
m D G
m S D
g R R
g R R
1
m G
is
m S
g R
A
g R
1
m D G
i
m S D L
g R R
A
g R R R
133. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1879/21/2020
The Common-Source Amplifier with a Source
Resistance
134. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1889/21/2020
The Common-Gate Amplifier
135. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1899/21/2020
The Common-Gate Amplifier
Neglect gmb and rO for Simplicity
DR
o
v
i
v
A
v
?
1
i i
m
v i
g
?
||o i D Lv i R R
||m D Lg R R
voA m Dg R
136. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1909/21/2020
vG
The Common-Gate Amplifier
||o i D Lv i R R
o
sig
v
v
i o
sig i
v v
v v
1
||
1
m
v m D L
sig
m
g
G g R R
R
g
||
1
m D L
v
m sig
g R R
G
g R
voG
1
m D
m sig
g R
g R
o
v
i
v
A
v
||m D Lg R R
137. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1919/21/2020
The Common-Gate Amplifier
iA
isA
D
D L
R
R R
1
138. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1929/21/2020
Current Followersig ii i
The Common-Gate Amplifier
139. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1939/21/2020
The Common-Gate Amplifier Alternative Analysis
140. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1949/21/2020
The Common-Drain or Source-Follower Amplifier
141. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1959/21/2020
The Common-Drain or Source-Follower Amplifier
142. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1969/21/2020
inR
The Common-Drain or Source-Follower Amplifier
GR
143. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1979/21/2020
outR
The Common-Drain or Source-Follower Amplifier
144. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1989/21/2020
The Common-Drain or Source-Follower Amplifier
outR
145. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 1999/21/2020
The Common-Drain or Source-Follower Amplifier
outR
1
/ /o
m
r
g
146. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2009/21/2020
vA o
i
v
v
||
1
||
o L
o L
m
r R
r R
g
?o Lr R
1
L
v
L
m
R
A
R
g
The Common-Drain or Source-Follower Amplifier
Vi
147. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2019/21/2020
voA
||
1
||
o L
v
o L
m
r R
A
r R
g
The Common-Drain or Source-Follower Amplifier
1
o
o
m
r
r
g
148. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2029/21/2020
voG
vG
The Common-Drain or Source-Follower Amplifier
||
1
||
G o L
G sig
o L
m
R r R
R R r R
g
1
G o
G sig
o
m
R r
R R r
g
149. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2049/21/2020
1
1
||
i
L
m o L
v
R
g r R
ii io
iA
The Common-Drain or Source-Follower Amplifier
o
i
i
i
1
1
||
G
L
m o L
R
R
g r R
1
1
||
i
L
m o L
i
G
v
R
g r R
v
R
||
1
||
o Li
L
o L
m
r Rv
R r R
g
o
L
v
R
oi
150. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2059/21/2020
0| L
o
is R
i
i
A
i
ii io
The Common-Drain or Source-Follower Amplifier
151. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2069/21/2020
ii io
m Gg R
The Common-Drain or Source-Follower Amplifier
0| L
o
is R
i
i
A
i
152. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2079/21/2020
Table 5.4
Summary and Comparisons
153. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2089/21/2020
Table 5.4 (Continued)
Summary and Comparisons
154. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2119/21/2020
The Role of the Substrate-The Body Effect
VB
VDR
155. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2129/21/2020
The Role of the Substrate-The Body Effect
VDRVB
VB VB
Depletion RegionChannel
WDep Channel Hight ID
156. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2139/21/2020
The Role of the Substrate-The Body Effect
2nd Gate VB
VDR WDep
Channel Hight ID
157. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2149/21/2020
Small-Signal Equivalent Circuit Model
With Body Effect
158. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2159/21/2020
Temperature Effects
0DdI
dT
159. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2169/21/2020
Breakdown and Input Protection
160. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2179/21/2020
Breakdown:
20 150DBV
Avalanche
Avalanche
161. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2189/21/2020
Breakdown: Punch Through
20DBV V
Modern MOS has short L
162. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2199/21/2020
Breakdown
30GSV VStatic Charge
163. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2229/21/2020
Velocity Saturation
↑↑ electric fields → channel carrier drift velocity
reaches an upper limit (≈ 107 cm/s for electrons and
holes in silicon).
Modem very-short-channel devices can occur for vDS
<1 V.
𝑖 𝐷 = 𝛼𝑣 𝐺𝑆
𝑔 𝑚 = 𝐶𝑜𝑛𝑠𝑡𝑎𝑛𝑡
164. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2239/21/2020
The Depletion-Type MOSFET
165. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2249/21/2020
The Depletion-Type MOSFET
166. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2259/21/2020
The Depletion-Type MOSFET
167. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2269/21/2020
The Depletion-Type MOSFET
168. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2279/21/2020
The Depletion-Type MOSFET
169. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2289/21/2020
The Depletion-Type MOSFET
170. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2299/21/2020
The Depletion-Type MOSFET
171. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2309/21/2020
The Depletion-Type MOSFET
172. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2319/21/2020
The Depletion-Type MOSFET
173. Copyright Muhammad A M Islam.SBE202A Device Structure and Physical Operation 2329/21/2020
End of Chapter