BICMOS

2. 1. Introduction
2. Characteristics of CMOS Technology
3. Characteristics of Bipolar Technology
4. Combine advantages in BiCMOS Technology
5. BiCMOS Fabrication
6. BiCMOS Integrated Circuits

3. 8. Advantages of BiCMOS
9. Disadvantages of BiCMOS
10.Applications of BiCMOS
11.Comparison between CMOS and BiCMOS
12.BiCMOS Products
13.Conclusion

4.  The history of semiconductor devices started in
1930’s when Lienfed and Heil first proposed
the mosfet.
 Bipolar Technology was started in 1980’s.
 CMOS Technology was also started in mid
1980’s.
 Later in 1990 there was a cross over between
bipolar and CMOS Technology.
 In BiCMOS technology, both the MOS and
bipolar device are fabricated on the same chip .

5.  The objective of the BiCMOS is to combine
bipolar and CMOS so as to exploit the
advantages of both the technlogies.
 Today BiCMOS has become one of the
dominant technologies used for high
speed, low power and highly functional VLSI
circuits.
 The process step required for both CMOS and
bipolar are similar so the BiCMOS process has
been enhanced and integrated into the CMOS
process without any additional steps.

6.  The primary approach to realize high performance
BiCMOS devices is the addition of bipolar process
steps to a baseline CMOS process.
 The BiCMOS gates could be used as an effective
way of speeding up the VLSI circuits.
 The applications of BiCMOS are vast.
 Advantages of bipolar and CMOS circuits can be
retained in BiCMOS chips.
 BiCMOS technology enables high performance
integrated circuits IC’s but increases process
complexity.

7.  BiCMOS technology is a combination of
Bipolar and CMOS technology.
 CMOS technology offers less power
dissipation, smaller noise margins, and higher
packing density.
 Bipolar technology, on the other hand, ensures
high switching and I/O speed and good noise
performance
 Now we are in 3rd Generation BiCMOS
Technology.

8.  BiCMOS technology accomplishes both -
improved speed over CMOS and lower power
dissipation than bipolar technology.
 The main drawback of BiCMOS technology is
the higher costs due to the added process
complexity.
 This greater process complexity in BiCMOS
results in a cost increase compared to
conventional CMOS technology.

9. Vin
 Lower static power dissipation
 Higher noise margins
 Higher packing density
 High yield with large integrated complex functions
 High input impedance (low drive current)
 Scaleable threshold voltage
 High delay load sensitivity
 Low output drive current (issue when driving large
capacitive loads)
 Low transconductance, where transconductance, gm
 Bi-directional capability (drain & source are
interchangeable)
 A near ideal switching device
 Low gain

10.  Higher switching speed
 Higher current drive per unit area, higher gain
 Generally better noise performance and better high
frequency characteristics
 Improved I/O speed (particularly significant with the
growing importance of package limitations in high
speed systems).
 high power dissipation
 lower input impedance (high drive current)
 low packing density
 low delay sensitivity to load
 High transconductance gm (gm Vin)
 It is essentially unidirectional.

11.  It follows that BiCMOS technology goes some way
towards combining the virtues of both CMOS and
Bipolar technologies
 Improved speed over purely-CMOS technology
 Lower power dissipation than purely-bipolar
technology(Lower power consumption than bipolar)
 Flexible I/Os for high performance
 Improved current drive over CMOS
 Improved packing density over bipolar
 High input impedance
 Low output impedance
 High Gain and low noise

13. BiCMOS Integrated Circuits

14. ADVANTAGES
 Improved speed over CMOS
 Improved current drive over
CMOS
 Improved packing density over
bipolar
 Lower power consumption than
bipolar
 High input impedance
 Low output impedance
 High Gain and low noise

15. DISADVANTAGES
 Increased manufacturing process
complexity
 higher cost
 Speed degradation due to scaling
 longer fabrication cycle time BiCMOS
process
 Bipolar process
+
Well
+
Gate Oxide & Poly
+
CMOS process

16.  Full custom ICs
 ALU’s, Barrel Shifters
 SRAM, DRAM
 Microproessor, Controller
 Semi custom ICs
 Register, Flipflop ,Standard
cells
 Adders, mixers, ADC, DAC
 Gate arrays
 Flash A/D Coverters

17. 1.Speed Comparison
3.Area Comparison
2.Delay Comparison

19. LITERATURE SURVEY
BOOKS:
VLSI Basic Design by Douglas A. Pucknell and
Kamran Eshraghian
WEBSITES: http://www.vlsihandbook.com
http://www.bicmosdesign.com
http://website.informer.com
http://www.freepatentsonline.com/6927460.html

20. THANKYOU