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MICROSYSTEMS LABORATORY
DEPARTMENT OF ELECTRICAL &
COMPUTER ENGINEERING
A CMOS Voltage Adjustable All-Pass Circuit
Robert W. Newcomb
Talk for SWAN 06
December 8, 2006
(Systems Workshop on Adaptive & Networks)
At the Automation and Robotics Research Institute
The University of Texas at Arlington
With Great Thanks to, and Respect for,
Frank Lewis
And especially for taking the initiative to
Organize SWAN 06
2
Main topic of this talk:
The design of a VLSI all-pass CMOS circuit
for variable phase controlled by a voltage .
Possible uses:
An alternate type of phase locked loop
(may have a phase noise advantage)
Phase correction for various purposes.
Outline:
The degree one circuit of Maundy-Aronhime;
Generalization to any degree
Conversion to VLSI transistors; VLSI layout
Spice simulations; MathCad symbolic analysis
At end: Some Microsystems research topics.
3
Reference: B. J. Maundy & P. Aronhime, "A Novel First-Order All-
Pass Filter," International Journal of Electronics, Vol. 89, No. 9,
2002, pp. 739 - 743.
The ideas are based upon the circuit of Maundy & Aronhime.
Their circuit gives
Vout=2*V3-Vin
Using the RC voltage divider V3={(1/sC)/[R+(1/sC)]}Vin
which is
V3={1/[1+sRC]}Vin
gives the degree one all-pass transfer function
Vout/Vin=[1-sRC]/[1+sRC] = T(s)=1/T(-s)
Angle T(jw) = -2*arctan(RCw); |T(jw)|=1
4
The Maundy - Aronhime Circuit
IDM2=IDM1=>VGSM1=VGSM2=>V3-Vx=Vb-0
IDM4=IDM3=>VGS4=VGS3=>Vin-Vy=Vx-0
IDM6=IDM5=>VGS6=VGS5=>V3-Vo=Vy-0
=> Vo=V3-Vy=V3-[Vin-Vx]=V3-[Vin-(V3-Vb)]
=> Vo=2V3-Vin -Vb
Here Vb is a DC offset;
M4&M3 require Vin offset > 2Vthreshold NMOS
5
Generalization to arbitrary rational all-pass
 
port.-1losslessaofimpedancepointdrivingthe
asblesynthesizaisz(s),thereforeand,functionreactanceaisd[D(s)]Ev[D(s)]/O*Rz(s)where
d[D(s)]Ev[D(s)]/OR/sz
z(s)R
z(s)
z(s)/R1
z(s)/R
Od[D(s)]Ev[D(s)]
Ev[D(s)]
in
V
3
V
or
D(s)
s)]/2D([(D(s)
1)
in
V
outV
)T(
1(*)
2
1(
in
V
3
V
(2)into(1)
(2)1))
in
V
3
V
(2(*)T(
in
V
outV
set
(1)monicandHurwitzD(s)with
D(s)
D(-s)
)T(
in
V
out
V
D(s)
N(s)
T(s)














6
Transistorization for VLSI and with variable R
7
Spice run: Phase in degrees
8
Spice run: Magnitude in DB
9
Bias conditions for proper operation 10
Need to account for offsets due to substrates of M2, M4, M6
Not connected to their sources; adds [(-Vbs)^½-^½] to VTO
Small Signal Analysis
By replacing each transistor by its pi equivalent, and
Numbering x=4, y=5, ground=6, the indefinite Y matrix
is obtained. Deleting the 6th row and column yields the
nodal admittance matrix.
Y11s( )
s Cg gor
0
0
s Cg gm6 go5 go6







Y12s( )
gor
s Cgs gm6
0
0
s Cgs
s Cgd gm5







Y21s( )
gor
0
s Cgs gm4
s Cgs
0
s Cgd









Y22s( )
s C3 gor
s Cgs gm2
0
s Cgs
s 2 Cg( ) gm2 go2 go1
s Cgd gm3
0
s Cgd
s 2 Cg( ) gm4 go4 go3








 *
Form the 2-port Y(s)=Y11-Y12*Z22*Y21 where Z22=Y22^-1
From which: T(s)=-Y(s)[2,1]/Y(s)[2,2]
Display by float 4 to 4 digits and then solve, for the poles and
zeros at different resistor control voltages, Vr.
11
Using MathCad symbolic analysis, by eliminating
Internal nodes (3,4,5) the transfer function is obtained
At Vr=1; T1 s( ) .1000e-1
.3408e59s
3
 .4601e71s
2
 .4245e82s .1936e89 .5113e48s
4

.3336e47s
4
 .1436e59s
3
 .1552e70s
2
 .4136e80s .1892e87

T1poles
280224017903.14247865
110019883211.21689326
40207159123.703935431
4575253.5434072945902











T1zeros
281533881897.68268219
95130927327.539115326
4560434.1831566032044
310006620783.99776471











At Vr=2; T2 s( ) .1000e-1
.3407e59s
3
 .4601e71s
2
 .4245e82s .2394e88 .5113e48s
4

.3336e47s
4
 .1436e59s
3
 .1552e70s
2
 .4136e80s .2343e86

Poles
83119048162807652755.
31070021145535858293.
12849299996210576479.
2267389.3405606996897










 Zeros
84495397124519949174.
25577256343187389599.
2252388.7205777607871
77665064967802876332.











12
Mathcad plots from symbolic transfer function
100 1 10
3
1 10
4
1 10
5
1 10
6
1 10
7
200
180
160
140
120
100
80
60
40
20
0
Phase1 w( )
Phase2 w( )
w
100 1 10
3
1 10
4
1 10
5
1 10
6
1 10
7
0.1
1
10
A1 w( )
A2 w( )
w
13
VLSI Layout for 1.2U AMI fabrication
14
6 main transistors
10ux10u, cap 38ux32u
Vdd
Gnd
In
Out
Vr
Vb
Other research topics of Microsystems Laboratory:
1. Use of ABR (=Acoustic Brain-Stem Response) for
characterizing hearing loss and creation of hearing aids.
Possible use for control of Parkinsons' disease.
2. Use of Beeler-Reuter heart models for VLSI mimic
of heart electrical control for effect of drugs on
arrythmias.
3. Spice models for flexible transistor circuit design.
4. Spice models of DNA electrical characterization
and use of braid group models of DNA type structures.
5. Use of nano sized Y-junctions for room temperature
nano-computers based upon electron swarms.
6. Neural networks using single electron quantum dots.
7. VLSI realization of Prof. Roa’s neural simulink model
incorporating Ca channels.
8. Wireless data collection for on patient sensors
15

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Swan all pass

  • 1. MICROSYSTEMS LABORATORY DEPARTMENT OF ELECTRICAL & COMPUTER ENGINEERING A CMOS Voltage Adjustable All-Pass Circuit Robert W. Newcomb Talk for SWAN 06 December 8, 2006 (Systems Workshop on Adaptive & Networks) At the Automation and Robotics Research Institute The University of Texas at Arlington
  • 2. With Great Thanks to, and Respect for, Frank Lewis And especially for taking the initiative to Organize SWAN 06 2
  • 3. Main topic of this talk: The design of a VLSI all-pass CMOS circuit for variable phase controlled by a voltage . Possible uses: An alternate type of phase locked loop (may have a phase noise advantage) Phase correction for various purposes. Outline: The degree one circuit of Maundy-Aronhime; Generalization to any degree Conversion to VLSI transistors; VLSI layout Spice simulations; MathCad symbolic analysis At end: Some Microsystems research topics. 3
  • 4. Reference: B. J. Maundy & P. Aronhime, "A Novel First-Order All- Pass Filter," International Journal of Electronics, Vol. 89, No. 9, 2002, pp. 739 - 743. The ideas are based upon the circuit of Maundy & Aronhime. Their circuit gives Vout=2*V3-Vin Using the RC voltage divider V3={(1/sC)/[R+(1/sC)]}Vin which is V3={1/[1+sRC]}Vin gives the degree one all-pass transfer function Vout/Vin=[1-sRC]/[1+sRC] = T(s)=1/T(-s) Angle T(jw) = -2*arctan(RCw); |T(jw)|=1 4
  • 5. The Maundy - Aronhime Circuit IDM2=IDM1=>VGSM1=VGSM2=>V3-Vx=Vb-0 IDM4=IDM3=>VGS4=VGS3=>Vin-Vy=Vx-0 IDM6=IDM5=>VGS6=VGS5=>V3-Vo=Vy-0 => Vo=V3-Vy=V3-[Vin-Vx]=V3-[Vin-(V3-Vb)] => Vo=2V3-Vin -Vb Here Vb is a DC offset; M4&M3 require Vin offset > 2Vthreshold NMOS 5
  • 6. Generalization to arbitrary rational all-pass   port.-1losslessaofimpedancepointdrivingthe asblesynthesizaisz(s),thereforeand,functionreactanceaisd[D(s)]Ev[D(s)]/O*Rz(s)where d[D(s)]Ev[D(s)]/OR/sz z(s)R z(s) z(s)/R1 z(s)/R Od[D(s)]Ev[D(s)] Ev[D(s)] in V 3 V or D(s) s)]/2D([(D(s) 1) in V outV )T( 1(*) 2 1( in V 3 V (2)into(1) (2)1)) in V 3 V (2(*)T( in V outV set (1)monicandHurwitzD(s)with D(s) D(-s) )T( in V out V D(s) N(s) T(s)               6
  • 7. Transistorization for VLSI and with variable R 7
  • 8. Spice run: Phase in degrees 8
  • 10. Bias conditions for proper operation 10 Need to account for offsets due to substrates of M2, M4, M6 Not connected to their sources; adds [(-Vbs)^½-^½] to VTO
  • 11. Small Signal Analysis By replacing each transistor by its pi equivalent, and Numbering x=4, y=5, ground=6, the indefinite Y matrix is obtained. Deleting the 6th row and column yields the nodal admittance matrix. Y11s( ) s Cg gor 0 0 s Cg gm6 go5 go6        Y12s( ) gor s Cgs gm6 0 0 s Cgs s Cgd gm5        Y21s( ) gor 0 s Cgs gm4 s Cgs 0 s Cgd          Y22s( ) s C3 gor s Cgs gm2 0 s Cgs s 2 Cg( ) gm2 go2 go1 s Cgd gm3 0 s Cgd s 2 Cg( ) gm4 go4 go3          * Form the 2-port Y(s)=Y11-Y12*Z22*Y21 where Z22=Y22^-1 From which: T(s)=-Y(s)[2,1]/Y(s)[2,2] Display by float 4 to 4 digits and then solve, for the poles and zeros at different resistor control voltages, Vr. 11
  • 12. Using MathCad symbolic analysis, by eliminating Internal nodes (3,4,5) the transfer function is obtained At Vr=1; T1 s( ) .1000e-1 .3408e59s 3  .4601e71s 2  .4245e82s .1936e89 .5113e48s 4  .3336e47s 4  .1436e59s 3  .1552e70s 2  .4136e80s .1892e87  T1poles 280224017903.14247865 110019883211.21689326 40207159123.703935431 4575253.5434072945902            T1zeros 281533881897.68268219 95130927327.539115326 4560434.1831566032044 310006620783.99776471            At Vr=2; T2 s( ) .1000e-1 .3407e59s 3  .4601e71s 2  .4245e82s .2394e88 .5113e48s 4  .3336e47s 4  .1436e59s 3  .1552e70s 2  .4136e80s .2343e86  Poles 83119048162807652755. 31070021145535858293. 12849299996210576479. 2267389.3405606996897            Zeros 84495397124519949174. 25577256343187389599. 2252388.7205777607871 77665064967802876332.            12
  • 13. Mathcad plots from symbolic transfer function 100 1 10 3 1 10 4 1 10 5 1 10 6 1 10 7 200 180 160 140 120 100 80 60 40 20 0 Phase1 w( ) Phase2 w( ) w 100 1 10 3 1 10 4 1 10 5 1 10 6 1 10 7 0.1 1 10 A1 w( ) A2 w( ) w 13
  • 14. VLSI Layout for 1.2U AMI fabrication 14 6 main transistors 10ux10u, cap 38ux32u Vdd Gnd In Out Vr Vb
  • 15. Other research topics of Microsystems Laboratory: 1. Use of ABR (=Acoustic Brain-Stem Response) for characterizing hearing loss and creation of hearing aids. Possible use for control of Parkinsons' disease. 2. Use of Beeler-Reuter heart models for VLSI mimic of heart electrical control for effect of drugs on arrythmias. 3. Spice models for flexible transistor circuit design. 4. Spice models of DNA electrical characterization and use of braid group models of DNA type structures. 5. Use of nano sized Y-junctions for room temperature nano-computers based upon electron swarms. 6. Neural networks using single electron quantum dots. 7. VLSI realization of Prof. Roa’s neural simulink model incorporating Ca channels. 8. Wireless data collection for on patient sensors 15