SiC Based DC-DC Converte

1. Cycle 1 - Experiment No.1
Dr.Alagu Dheeraj
Dr.D.Umarani

2.  Power electronics are fundamental components in consumer electronics and clean
energy technologies.
 For several decades, silicon (Si) has been the primary semiconductor choice for
power electronic devices.
 Due to the many decades dedicated to the development and fabrication optimization
of Si devices, as well as the large abundance of material, the manufacturing capability
is high, and the costs are extremely low. However, Si is quickly approaching its limits
in power conversion.
 The key for the next essential step towards an energy-efficient world lies in the use of
new materials, such as wide bandgap semiconductors which allow for greater power
efficiency, smaller size, lighter weight, lower overall cost – or all of these together.

3.  Of the various types of WBG semiconductors, silicon carbide (SiC) have proven to be
the most promising technologies, with several devices already being sold
commercially
 Alternatively, SiC has shown tremendous high temperature capability, as well as
aptitude for high voltage applications. Furthermore, the cost of SiC devices has
decreased within the last decade, and the performance has proven superior to that of
conventional Si devices.
 Some of the potential application areas for these WBG devices include: transportation
electrification and renewable energy.

4.  There are three main physical characteristics of SiC semiconductors which makes it
superior to ordinary Si devices.
 Lower leakage currents. Electron-hole pairs generates much slower in SiC than in
Si. This will reduce the leakage current losses when the switch is off compared to Si at
a given temperature.
 Increased critical breakdown strength. This implies that the device can withstand a
higher voltage in the same package, or the package insulation can be reduced at the
same voltage rating. Devices like MOSFET, JFET and the SBD can thereby be
created at blocking voltages approximately an order of magnitude higher than what is
possible with Si.
 A higher thermal conductivity allows for more efficient transportation of heat from
the device. Additionally, the on-state resistance through the switch is lower, causing
decreased conducting losses.

5. SiC Device Si Device

6. To test the SiC MOSFET based DC-DC Boost Converter in open loop and
closed loop operation for different duty cycles and reference voltages.

13. Input Voltage (V) Duty Cycle (%) Output Voltage (V)
10
10 10.11
20 11.35
30 12.99
40 14.88
50 17.79
60 23.45

14. 0
5
10
15
20
25
0 10 20 30 40 50 60 70
Output
voltage(V)
Duty Cycle (%)
Duty Cycle Vs Output Voltage

15. Input Voltage (V) Reference Voltage (V) Output Voltage (V)
10
10 10
12 12
14 14
16 16
18 18
20 20

16. 0
5
10
15
20
25
0 5 10 15 20 25
Output
Voltage
(V)
Reference Voltage(V)
Ref Voltage Vs Output Voltage

17.  Understand the SiC MOSFETS.
 Understand the basic operation of DC-DC Boost Converters.
 Understand open loop and closed loop operation of SiC MOSFET based DC-DC
converter.