The document provides a comprehensive device modeling report for the RURG8060 diode, including detailed specifications such as saturation current, series resistance, and junction potential. It presents simulation results for forward current characteristics, capacitance characteristics, and reverse recovery characteristics, alongside comparisons between measured and simulated data. All content is copyrighted by Bee Technologies Inc. and includes various assessment metrics on performance accuracy.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER / STANDARD
PART NUMBER: RURG8060
MANUFACTURER: INTERSIL
REMAERK: TC=25C
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

3. Forward Current Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
V1
0Vdc D1
RURG8060_25C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.05 0.410 0.415 -1.22
0.1 0.462 0.459 0.65
0.2 0.508 0.508 0.00
0.5 0.574 0.575 -0.17
1 0.630 0.628 0.32
2 0.686 0.684 0.29
5 0.774 0.772 0.26
10 0.858 0.859 -0.12
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
V2
0Vdc
V2 = 600 V1 D1
V1 = 0
TD = 0
TR = 1us
TF = 10ns
PW = 5us
PER = 10us
RURG8060_25C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) Measurement Simulation %Error
0 1123.800 1123.800 0.00
0.1 1035.600 1041.900 -0.61
0.2 966.330 964.835 0.15
0.5 809.260 812.782 -0.44
1 670.910 672.107 -0.18
2 526.730 530.743 -0.76
5 366.340 371.220 -1.33
10 273.730 277.134 -1.24
20 209.550 205.375 1.99
50 158.600 152.509 3.84
100 131.380 127.220 3.17
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
50
V2 = 10.5V V1
V1 = -9.45V D1
TD = 0
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us
RURG8060_25C
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr 164.0 ns 164.1 ns 0.06
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. Reverse Recovery Characteristic Reference
Measurement
Trj =44(ns)
Trb=120(ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005