The document presents a device modeling report for the RHRG7560 diode, detailing its parameters for simulation including saturation current, junction capacitance, and reverse breakdown voltage. It includes simulation results comparing forward current characteristics and capacitance characteristics against measurements, with % error calculations. Additionally, it addresses reverse recovery characteristics with specific measurements and conditions provided.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER / STANDARD
PART NUMBER: RHRG7560
MANUFACTURER: INTERSIL
REMARK: TC=110C
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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3. Forward Current Characteristic Reference
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4. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
D1
V1
0Vdc
rhrg7560_110C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.1 0.368 0.388 5.4347
0.2 0.418 0.4258 1.8660
0.5 0.482 0.4867 0.9751
1 0.542 0.5412 -0.1476
2 0.612 0.6063 -0.9313
5 0.736 0.7266 -1.2771
10 0.87 0.8754 0.6206
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
V2
0Vdc
V2 = 600V V1
V1 = 0 D1
TD = 0
TR = 1us
TF = 10ns DRURG7560_110C
PW = 5us
PER = 10us
0
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7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 827.110 827.110 0.00
0.2 627.100 633.835 -1.07
0.5 517.330 519.817 -0.48
1 435.220 438.373 -0.72
2 364.100 364.814 -0.20
5 281.200 284.275 -1.09
10 232.302 234.130 -0.79
20 193.311 193.000 0.16
50 151.302 150.000 0.86
100 126.350 122.350 3.17
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
50
V2 = 10.5V V1 D1
V1 = -9.55V
TD = 0 rhrg7560_110C
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr
202 ns 203 ns 0.495
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. Reverse Recovery Characteristic Reference
Measurement
Trj =74 (ns)
Trb=128 (ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005