This document is a device modeling report for a diode (part number: 1SR156-400) by ROHM, which outlines technical parameters such as saturation current, reverse breakdown voltage, and junction capacitance. It includes simulation results for forward current characteristics, capacitance characteristics, and reverse recovery characteristics, comparing measured values with simulation predictions. The report emphasizes the accuracy of the simulation results, highlighting minimal errors between the measurements and simulations.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER / PROFESSIONAL
PART NUMBER: 1SR156-400
MANUFACTURER: ROHM
REMARK: TC=80C
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

3. Forward Current Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

4. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
V1
0Vdc U1
D1SR156-400_80C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) Measurement Simulation %Error
0.01 0.526 0.525 0.19
0.02 0.582 0.580 0.34
0.05 0.658 0.660 -0.30
0.1 0.726 0.724 0.28
0.2 0.796 0.796 0.00
0.5 0.914 0.913 0.11
1 1.038 1.038 0.00
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

6. Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
V2
0Vdc
V2 = 400V V1
V1 = 0 U1
TD = 0
TR = 1us
TF = 10ns
PW = 5us
PER = 10us D1SR156-400_80C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 16.690 16.690 0.00
0.1 15.428 15.712 -1.84
0.2 14.699 14.828 -0.88
0.5 13.184 13.375 -1.45
1 11.852 11.904 -0.44
2 10.333 10.246 0.84
5 8.314 8.180 1.61
10 6.853 6.739 1.66
20 5.553 5.563 -0.18
50 4.153 4.294 -3.40
100 3.389 3.500 -3.28
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

8. Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
50
V2 = 10.8V V1
V1 = -9.2V U1
TD = 0
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us D1SR156-400_80C
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj 56.0 ns 56.5 ns 0.89
Trb 256.0 ns 254.4 ns 0.62
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

9. Reverse Recovery Characteristic Reference
Measurement
Trj =56(ns)
Trb=256(ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004