The document provides a detailed modeling report for a RURG8060 diode, outlining its electrical characteristics and parameters, such as saturation current and reverse breakdown voltage. It includes simulation results for forward current and capacitance characteristics, along with a comparison of measurement and simulation data highlighting percentage errors. The report concludes with reverse recovery characteristics, detailing measurement and simulation timing for both rise and fall transitions.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER / PROFESSIONAL
PART NUMBER: RURG8060
MANUFACTURER: INTERSIL
REMARK: TC=150C
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

3. Forward Current Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc
DRURG8060
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.1 0.358 0.365 -1.96
0.2 0.404 0.404 0.00
0.5 0.464 0.460 0.86
1 0.506 0.505 0.20
2 0.560 0.557 0.54
5 0.644 0.643 0.16
10 0.736 0.737 -0.14
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
V2
0Vdc
V2 = 600 V1 U1
V1 = 0
TD = 0
TR = 1us
TF = 10ns
PW = 5us
PER = 10us
DRURG8060
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 1660.000 1660.000 0.00
0.1 1441.000 1480.400 -2.73
0.2 1315.000 1304.700 0.78
0.5 1002.000 1016.500 -1.45
1 776.380 794.041 -2.27
2 577.680 596.982 -3.34
5 385.640 395.216 -2.48
10 282.730 284.730 -0.71
20 213.710 204.300 4.40
50 150.200 143.206 4.66
100 115.670 109.981 4.92
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
50
V2 = 10.4V V1
V1 = -9.55V U1
TD = 0
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us
DRURG8060
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj 232.0 ns 232.3 ns 0.129
trb 264.0 ns 263.5 ns 0.189
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. Reverse Recovery Characteristic Reference
Measurement
Trj =232(ns)
Trb=264(ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005