Power Design - Head to Head: Integrated Silicon vs. GE Point of Load (POL)
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The document compares two power design options: integrated silicon and GE point-of-load (POL). It lists factors such as ease of design, motherboard real estate, reliability, scalability, performance, cost, EMI/ripple/noise, and features in a head-to-head comparison. For most factors, integrated silicon is rated higher than GE POL due to advantages like tighter footprints utilizing available height, better thermal performance and electrical conversion efficiency, and leveraging the best components available for the design.
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