92nd Japanese Chemical Society Spring Meeting-2012, oral presentation on influence of nature of anchoring group in photo sensitization behavior of unsymmetrical squaraine dyes
92nd Japanese Chemical Society Spring Meeting-2012, oral presentation on influence of nature of anchoring group in photo sensitization behavior of unsymmetrical squaraine dyes
CEWAC - applied research in welding, material testing and industrial hydrauli...frehendrickx
CEWAC is a Belgian service centre to the industry performing studies and applied research, founded in 1989.
We are located close to the borders with the Netherlands, Germany, Luxemburg and France.
Our two main divisions are:
a) assembly and material testing
b) hydraulics and hydromechanics
more info on:
www.cewac.be
MNR & Anti MNR In Conductivity Of Highly Crystallized Undoped Microcrystallin...Sanjay Ram
Can anti-MNR be possible in the dark conductivity behavior in undoped single phase microcrystalline silicon? What may be the origin of anti-MNR in such a case?
This presentation has been moved. To view this presentation, please visit http://pubs.acs.org/iapps/liveslides/pages/index.htm?mscNo=jz3008408
Ultrafast Studies of the Photophysics of Cis and Trans States of the Green Fluorescent Protein Chromophore
In-band OSNR Monitoring Technique based on Brillouin Fiber Ring LaserDavid Dahan
We propose an improved technique for in-band OSNR monitoring based on a Brillouin fiber ring laser seeded by the optical channel to be monitored. This technique shows a reduction of the required input power into the monitor along with a large and tunable dynamic OSNR monitoring range. It is demonstrated experimentally and numerically for various bit rates and modulation formats
My Thesis: Influence of Microstructure on the Electronic Transport Behavior o...Sanjay Ram
My Thesis
I investigated the microstructure of a wide variety of nano and microcrystalline Si (μc-Si:H) films
produced under different growth conditions using different characterization probes (spectroscopic
ellipsometry, Raman spectroscopy, atomic force microscopy and X-ray diffraction) at different stages of film growth.
In microstructural studies, I applied a novel modeling method for deconvolution of Raman
spectra of the μc-Si:H films and elucidated schematic growth models for the SiF4 based single phase μc-Si:H material.
I carried out studies on the optoelectronic properties of these microstructurally different
films using dark and photo- conductivity as functions of several discerning parameters. The results of these studies led me to expound a novel way of classifying the wide range of materials into three types based on microstructural attributes and correlative optoelectronic properties. My electrical transport
studies have uncovered some new aspects of the carrier conduction routes and mechanisms in the single phase μc-Si:H material. I have proposed the complete effective distributions of density of states (DOS) applicable to this wide microstructural range of μc-Si:H material based on the results of experimental and numerical simulation studies of the phototransport properties of the material.
Dielectronic recombination and stability of warm gas in AGNAstroAtom
Paper presented by Susmita Chakravorty at the 17th International Conference on Atomic Processes in Plasmas, Queen's University Belfast, 19-22 July 2011.
Reali darbo patirtis – reali darbo perspektyva laimėjusiems!
Tu jaunas, motyvuotas, gabus, besidomintis Lietuvos ekonomika?! Nori save realizuoti ir parodyti visai Lietuvai ką sugebi?! "Iššūkis aktyviems" kaip tik TAU!
CEWAC - applied research in welding, material testing and industrial hydrauli...frehendrickx
CEWAC is a Belgian service centre to the industry performing studies and applied research, founded in 1989.
We are located close to the borders with the Netherlands, Germany, Luxemburg and France.
Our two main divisions are:
a) assembly and material testing
b) hydraulics and hydromechanics
more info on:
www.cewac.be
MNR & Anti MNR In Conductivity Of Highly Crystallized Undoped Microcrystallin...Sanjay Ram
Can anti-MNR be possible in the dark conductivity behavior in undoped single phase microcrystalline silicon? What may be the origin of anti-MNR in such a case?
This presentation has been moved. To view this presentation, please visit http://pubs.acs.org/iapps/liveslides/pages/index.htm?mscNo=jz3008408
Ultrafast Studies of the Photophysics of Cis and Trans States of the Green Fluorescent Protein Chromophore
In-band OSNR Monitoring Technique based on Brillouin Fiber Ring LaserDavid Dahan
We propose an improved technique for in-band OSNR monitoring based on a Brillouin fiber ring laser seeded by the optical channel to be monitored. This technique shows a reduction of the required input power into the monitor along with a large and tunable dynamic OSNR monitoring range. It is demonstrated experimentally and numerically for various bit rates and modulation formats
My Thesis: Influence of Microstructure on the Electronic Transport Behavior o...Sanjay Ram
My Thesis
I investigated the microstructure of a wide variety of nano and microcrystalline Si (μc-Si:H) films
produced under different growth conditions using different characterization probes (spectroscopic
ellipsometry, Raman spectroscopy, atomic force microscopy and X-ray diffraction) at different stages of film growth.
In microstructural studies, I applied a novel modeling method for deconvolution of Raman
spectra of the μc-Si:H films and elucidated schematic growth models for the SiF4 based single phase μc-Si:H material.
I carried out studies on the optoelectronic properties of these microstructurally different
films using dark and photo- conductivity as functions of several discerning parameters. The results of these studies led me to expound a novel way of classifying the wide range of materials into three types based on microstructural attributes and correlative optoelectronic properties. My electrical transport
studies have uncovered some new aspects of the carrier conduction routes and mechanisms in the single phase μc-Si:H material. I have proposed the complete effective distributions of density of states (DOS) applicable to this wide microstructural range of μc-Si:H material based on the results of experimental and numerical simulation studies of the phototransport properties of the material.
Dielectronic recombination and stability of warm gas in AGNAstroAtom
Paper presented by Susmita Chakravorty at the 17th International Conference on Atomic Processes in Plasmas, Queen's University Belfast, 19-22 July 2011.
Reali darbo patirtis – reali darbo perspektyva laimėjusiems!
Tu jaunas, motyvuotas, gabus, besidomintis Lietuvos ekonomika?! Nori save realizuoti ir parodyti visai Lietuvai ką sugebi?! "Iššūkis aktyviems" kaip tik TAU!
Anomalous Behavior Of SSPC In Highly Crystallized Undoped Microcrystalline Si...Sanjay Ram
Microcrystalline silicon is a heterogenous material. We show that different effective DOS distribution can be possible for micro-structurally different μc--Si:H thin films
Light sources based on optical-scale acceleratorsGil Travish
Presented at the 2010 Future Light Sources Workshop, SLAC, Palo Alto, CA. Gives an overview of optical-scale particle accelerator structures as would be used in x-ray light sources.
This presentation was given in Cardiff at the European Society of Rheology Conference in 2009. The presentation is about research in "extreme" areas of rheology and includes work on measuring the viscoelasticity of low viscosity fluids and the limiting extensional viscosity of high viscosity fluids.
Different types of Nanolithography technique.
Types: Electron beam lithography, Photolithography, electron-beam writing, ion- lithography, X-ray lithography, and related images, concepts and graphical views.
I hope this presentation helpful for you.
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Preeti Choudhary
LiNbO3 is widely used as electro-optic modulators and Q-switches for Nd:YAG, Nd:YLF and Ti:Sapphire lasers as well as modulators for fiber optics. The following table lists the specifications of a typical LiNbO3 crystal used as Q-switch with transverse E-O modulation. The light propagates in z-axis and electric field applies to x-axis. The electro-optic coefficients of LiNbO3 are: r33 = 32 pm/V, r31 = 10 pm/V, r22 = 6.8 pm/V at low frequency and r33 = 31 pm/V, r31= 8.6 pm/V, r22 = 3.4 pm/V at high electric frequency. The half–wave voltage: Vπ=λd/(2no3r22L), r c=(ne/no)3r33-r13.
Introduction to nanoscience and nanotechnologyaimanmukhtar1
Introduction of nanoscience/nanotechnology ,properties/potential applications of nanomaterials and electrodeposition of metal single component and alloy nanowires in AAO template
Tantawi - Measurements of RF properties of Novel Superconducting Materialsthinfilmsworkshop
http://www.surfacetreatments.it/thinfilms
Measurements of RF properties of Novel Superconducting Materials (Sami Tantawi - 20')
Speaker: Sami Tantawi - SLAC National Accelerator Laboratory | Duration: 20 min.
Abstract
We have developed an X-band SRF testing system using a high-Q copper cavity with an interchangeable flat bottom for the testing of different materials. By measuring the Q of the cavity, the system is capable to characterize the quenching magnetic field of the superconducting samples at different power level and temperature, as well as the surface resistivity. This paper will present the most recent development of the system and testing results.
MOLECULES (and specially SAMs) have a great POTENTIAL for spintronics. In this presentation I will show you some of the possibilities offered by molecules in the construction of spintronic devices.
1. Atomic scale analysis of oxides using Laser
Assisted Atom Probe Tomography
B.Mazumder,A.Vella & B.Deconihout
GPM, Université de Rouen, France
CNRS Laboratory
V. Thakare & S.B.Ogale
Physical and Materials Chemistry Division
National Chemical Laboratory, India
1
2. Outline
• Motivation
• Sample preparation
• Results on Oxides
A) SiO2
B) MgO
C) High K material – HfO2
• Conclusions and Perspectives
2
3. Microelectronics Application
Continuous improvement of each Tunnel magneto resistance
part of the MOS transistors
Silicide
Spacer
Gate MgO
Gate
Silicide oxide Silicide
Channel
Drain Source
Si
substrate
Dopant distribution in source/drain : dopant activation, clustering
Gate dielectric stack : dopant segregation, new materials (kigh-k)
Silicides: gate contact (lower resistivity)
Gate: polysilicon (dopant distribution) or metal
Tunnel barrier : MgO
3
4. 3D Atom Probe
Position Sensitive
Detector (X,Y,TOF)
• APT = FIM + TOF
• Tip subjected to field F~V/R
• Tip pulsed field evaporated atom by atom
Y
• Ions projected on a PSD
L
• TOF mass spectrometry
X
• 3D reconstruction of the atomic distribution
• Volume ~100x100x100 nm3
• Spatial Resolution - 0.2nm in depth
V 0.5nm laterally
Radius
4
R<100 nm
5. Material analysis by Atom Probe Tomography
Addition of ultrafast laser pulsing and improved Field of View
(FOV) opened a new era for APT
100x100 nm2 FOV
20x20 nm2 FOV
5
6. Sample Preparation
Two steps for sample preparation
(a) Lift out method or Attaching Si post
(b) Annular milling
1.Deposition of protection cap:
Pt Ion deposition (~1µm)
2.Cut a lamella by FIB
3.“Welding” it to the
micromanipulator
4.Bringing it in contact with a
support pillar
5. Welding it and cutting a
portion of tip
6
7. Attachment of Silicon post on Metal Tip
RIE etching process (IEMN, LAAS)
▪ Silicon posts (multilayers applications)
▪ fragments, powders,… 7
8. Annular Milling
The sample is aligned along the beam direction,
the inner diameter of the circular mask and the milling current
are reduced after each milling stage.
ions
electrons 1 µm
h
d
Si
Rough Mill Sharpening Final
0.5-1nA,30 keV 20-100pA, 30keV few pA, minimal Ga
h>2xd acceleration
8
9. Laser Assisted Tomography Atom Probe
R<100nm
Specimen
R
Needle Ion
tip
Shape P < 10 -10 Pa
T < 20-80K
PSD
Femtosec laser,100kHz V 0 < 20 kV
500fs
fs laser
pulse Green UV
3 Colour box Stop
IR signal
Start
signal
Time of flight
9
10. Analysis of an insulating layer SiO 2 (12nm)
P B 0
Courtesy M.Gillebert & F.Vurpillot
10
11. Thin layer (4nm) of MgO
Fe, Mg, O, FeO, Au
SEM image
Laser Wavelength: 343nm
Temperature: 80K Collaboration with
T. Al- Kassab
Gottingen University
Laser energy: 35- 40 nJ
Germany
Flux : Constant
11
15. Conclusions
• Oxides can be analyzed by laser assisted Atom Probe.
• However it depends on the thickness of the layer, oxides
property and strictly on sample preparation.
SiO2 MgO HfO2
Perspectives
• Analysis will be with the surface parallel to the tip axis to
avoid the tip rupture.
Tip axis Parallel to Oxide Layer
• More improvement in sample the surface
(cross section
preparation and analysis. mode)
Capping layer 15