This document compares level 1, 2, and 3 MOSFET models in SPICE simulations. It provides background on device modeling and outlines the key equations that define each model level. Level 1 is the simplest model and does not account for short channel effects. Level 2 includes mobility degradation and threshold voltage variations. Level 3 has similar accuracy to level 2 but faster simulation time and better convergence. Drain current versus drain-source voltage characteristics are plotted to show differences between the models.
High performance novel dual stack gating technique for reduction of ground bo...eSAT Journals
Abstract The development of digital integrated circuits is challenged by higher power consumption. The combination of higher clock speeds, greater functional integration, and smaller process geometries has contributed to significant growth in power density. Today leakage power has become an increasingly important issue in processor hardware and software design. So to reduce the leakages in the circuit many low power strategies are identified and experiments are carried out. But the leakage due to ground connection to the active part of the circuit is very higher than all other leakages. As it is mainly due to the back EMF of the ground connection we are calling it as ground bounce noise. To reduce this noise, different methodologies are designed. In this paper, a number of critical considerations in the sleep transistor design and implementation includes header or footer switch selection, sleep transistor distribution choices and sleep transistor gate length, width and body bias optimization for area, leakage and efficiency. Novel dual stack technique is proposed that reduces not only the leakage power but also dynamic power. The previous techniques are summarized and compared with this new approach and comparison of both the techniques is done with the help of Digital Schematic( DSCH ) and Microwind low power tools. Stacking power gating technique has been analyzed and the conditions for the important design parameters (Minimum ground bounce noise) have been derived. The Monte-Carlo simulation is performed in Microwind to calculate the values of all the needed parameters for comparison. Index Terms: Ground Bounce Noise ,Power gating schemes ,Static power dissipation, Dynamic power dissipation, Power gating parameters, Sleep transistors, Novel dual stack approach, Transistor leakage power
Optimization of Empirical Modelling of Advanced Highly Strained In 0.7 Ga 0.3...IJECEIAES
An optimized empirical modelling for a 0.25µm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is described and tested using the pHEMT measured dataset of I-V characteristics and related multi-bias s-parameters over 20GHz frequency range. The extraction of linear and nonlinear parameters from the small signal and large signal pHEMT equivalent model are performed in ADS. The optimized DC and S-parameter model for the pHEMT device provides a basis for active device selection in the MMIC low noise amplifier circuit designs.
A REVIEW OF LOW POWERAND AREA EFFICIENT FSM BASED LFSR FOR LOGIC BISTjedt_journal
Built in Self Test circuits enable an integrated circuit to test itself. Built in Self Test reduces test and maintenance costs for an integrated circuit by eliminating the need for expensive test equipment. Built in Self Test also allows an integrated circuit to test at its normal operating speed which is very important for detecting timing faults. Despite all of these advantages Built in Self Test has seen limited use in industry because of area and performance overhead and increased design time. This paper presents automated techniques for implementing BIST in a way that minimizes area and performance overhead. This approach allows applying at-speed test patterns and eliminates the need for an external tester. Proper design of the test pattern generator contributes to reduction in the power consumption of the CUT and the overall power consumption of the BIST circuitry. We have proposed FSM based LFSR which generate maximum correlation among the patterns and targeted on c432, c1908 and c3540 benchmark circuits to validate test power, achieved significant improved in power up to 15% compared to conventional test generator and also achieved optimal area overhead,designed using Verilog HDL and implemented using Xilinx 14.3 and Cadence tool.
Optimal Body Biasing Technique for CMOS Tapered Buffer IJEEE
This paper represents Fixed Body Biased CMOS Tapered Buffer which is designed to minimize the average power dissipation across large capacitive load. The implementation of Reverse Body Bias (RBB) in the proposed Buffer chain is to vary Vth value of NMOS in the first stage. And with the increase in Vth /sub-threshold leakage current and power has been reduced. The technology constraints on the threshold voltage does not allow designer to set high threshold voltage for MOS devices. Hence, this was found that in proposed circuit that when optimal Reverse Body Bias value is set within (0.2 VDD to 0.4 VDD) range, the average power dissipation across capacitive load reduces to 82.2 % at very less penalty in delay. Thus CMOS buffer designers can use the proposed method to vary Vth while keeping VDD constant, which could improve the performance parameters of Tapered Buffer. The proposed analysis is verified by simulating the 3-stage tapered buffer schematics using standard 180nm CMOS technology in Cadence environment.
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
High performance novel dual stack gating technique for reduction of ground bo...eSAT Journals
Abstract The development of digital integrated circuits is challenged by higher power consumption. The combination of higher clock speeds, greater functional integration, and smaller process geometries has contributed to significant growth in power density. Today leakage power has become an increasingly important issue in processor hardware and software design. So to reduce the leakages in the circuit many low power strategies are identified and experiments are carried out. But the leakage due to ground connection to the active part of the circuit is very higher than all other leakages. As it is mainly due to the back EMF of the ground connection we are calling it as ground bounce noise. To reduce this noise, different methodologies are designed. In this paper, a number of critical considerations in the sleep transistor design and implementation includes header or footer switch selection, sleep transistor distribution choices and sleep transistor gate length, width and body bias optimization for area, leakage and efficiency. Novel dual stack technique is proposed that reduces not only the leakage power but also dynamic power. The previous techniques are summarized and compared with this new approach and comparison of both the techniques is done with the help of Digital Schematic( DSCH ) and Microwind low power tools. Stacking power gating technique has been analyzed and the conditions for the important design parameters (Minimum ground bounce noise) have been derived. The Monte-Carlo simulation is performed in Microwind to calculate the values of all the needed parameters for comparison. Index Terms: Ground Bounce Noise ,Power gating schemes ,Static power dissipation, Dynamic power dissipation, Power gating parameters, Sleep transistors, Novel dual stack approach, Transistor leakage power
Optimization of Empirical Modelling of Advanced Highly Strained In 0.7 Ga 0.3...IJECEIAES
An optimized empirical modelling for a 0.25µm gate length of highly strained channel of an InP-based pseudomorphic high electron mobility transistor (pHEMT) using InGaAs–InAlAs material systems is presented. An accurate procedure for extraction is described and tested using the pHEMT measured dataset of I-V characteristics and related multi-bias s-parameters over 20GHz frequency range. The extraction of linear and nonlinear parameters from the small signal and large signal pHEMT equivalent model are performed in ADS. The optimized DC and S-parameter model for the pHEMT device provides a basis for active device selection in the MMIC low noise amplifier circuit designs.
A REVIEW OF LOW POWERAND AREA EFFICIENT FSM BASED LFSR FOR LOGIC BISTjedt_journal
Built in Self Test circuits enable an integrated circuit to test itself. Built in Self Test reduces test and maintenance costs for an integrated circuit by eliminating the need for expensive test equipment. Built in Self Test also allows an integrated circuit to test at its normal operating speed which is very important for detecting timing faults. Despite all of these advantages Built in Self Test has seen limited use in industry because of area and performance overhead and increased design time. This paper presents automated techniques for implementing BIST in a way that minimizes area and performance overhead. This approach allows applying at-speed test patterns and eliminates the need for an external tester. Proper design of the test pattern generator contributes to reduction in the power consumption of the CUT and the overall power consumption of the BIST circuitry. We have proposed FSM based LFSR which generate maximum correlation among the patterns and targeted on c432, c1908 and c3540 benchmark circuits to validate test power, achieved significant improved in power up to 15% compared to conventional test generator and also achieved optimal area overhead,designed using Verilog HDL and implemented using Xilinx 14.3 and Cadence tool.
Optimal Body Biasing Technique for CMOS Tapered Buffer IJEEE
This paper represents Fixed Body Biased CMOS Tapered Buffer which is designed to minimize the average power dissipation across large capacitive load. The implementation of Reverse Body Bias (RBB) in the proposed Buffer chain is to vary Vth value of NMOS in the first stage. And with the increase in Vth /sub-threshold leakage current and power has been reduced. The technology constraints on the threshold voltage does not allow designer to set high threshold voltage for MOS devices. Hence, this was found that in proposed circuit that when optimal Reverse Body Bias value is set within (0.2 VDD to 0.4 VDD) range, the average power dissipation across capacitive load reduces to 82.2 % at very less penalty in delay. Thus CMOS buffer designers can use the proposed method to vary Vth while keeping VDD constant, which could improve the performance parameters of Tapered Buffer. The proposed analysis is verified by simulating the 3-stage tapered buffer schematics using standard 180nm CMOS technology in Cadence environment.
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
Comparative Performance Analysis of Low Power Full Adder Design in Different ...ijcisjournal
This paper gives the comparison of performance of full adder design in terms of area, power and delay in
different logic styles. Full adder design achieves low power using the Transmission Gate logic compared to
all other topologies such as Basic CMOS, Pass Transistor and GDI techniques but it make use of more
number of transistors compared to GDI. GDI occupies less area compared to all other logic design styles.
This paper presents the simulated outcome using Tanner tools and also H-Spice tool which shows power
and speed comparison of different full adder designs. All simulations have been performed in 90nm, 45nm
and 22nm scaling parameters using Predictive Technology Models in H-Spice tool.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Analysis of leakage current calculation for nanoscale MOSFET and FinFETIJTET Journal
Abstract—This paper presents logic level estimators of leakage current for nanoscale digital standard cell circuits. Here the proposed estimation model is based on the characterization of internal node voltages of cells and the characterization of leakage current in a single Field-Effect Transistor (FET). Finally the estimation model allowed direct implementation of supply voltage variation impact on leakage current and output voltage drop (loading effect).The technique is feasible for implementation in Hardware Description Language (HDL) and HDL cell models supporting leakage estimation at simulation time.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Co-Simulation Interfacing Capabilities in Device-Level Power Electronic Circu...IJPEDS-IAES
Power electronic circuit simulation today has become increasingly more demanding in both
the speed and accuracy. Whilst almost every simulator has its own advantages and disadvantages,
co-simulations are becoming more prevalent. This paper provides an overview of
the co-simulation capabilities of device-level circuit simulators. More specifically, a listing
of device-level simulators with their salient features are compared and contrasted. The
co-simulation interfaces between several simulation tools are discussed. A case study is
presented to demonstrate the co-simulation between a device-level simulator (PSIM) interfacing
a system-level simulator (Simulink), and a finite element simulation tool (FLUX).
Results demonstrate the necessity and convenience as well as the drawbacks of such a comprehensive
simulation.
Distortion Analysis of Differential AmplifierIOSR Journals
Abstract: The linearity of the CMOS is of major concern in the design of many analog circuits. In this paper the nonlinearity behavior of CMOS analog integrated circuits is investigated.The basic building block of analog integrated circuits such as differential amplifier with current mirror load have been chosen for harmonic distortion analysis.A mechanism to analyze the distortion of CMOS circuits in deep submicron technology that can be easily used to detect the distortion is built.The MOSFET model used for simulation is TSMC BSIM3 SPICE model from 0.13-μm CMOS process technology. HSPICE circuit simulator tool is used for distortion analysis of CMOS circuits. The MOS model used in this paper includes short-channel effects and gate-source capacitance, gate-drain capacitance, output resistance of MOS transistor. Analytical results are compared with simulation results and the influences of circuit parameters on circuit linearity are discussed.
Keywords: Analog Integrated Circuits, CMOSanalog integrated circuits, harmonic distortion, HSPICE, Short-channel effects, small signal analysis, transient analysis.
DESIGN OF IMPROVED RESISTOR LESS 45NM SWITCHED INVERTER SCHEME (SIS) ANALOG T...VLSICS Design
This work presents three different approaches which eliminates the resistor ladder completely and hence
reduce the power demand drastically of a Analog to Digital Converter. The first approach is Switched
Inverter Scheme (SIS) ADC; The test result obtained for it on 45nm technology indicates an offset error of
0.014 LSB. The full scale error is of -0.112LSB. The gain error is of 0.07 LSB, actual full scale range of
0.49V, worst case DNL & INL each of -0.3V. The power dissipation for the SIS ADC is 207.987 μwatts;
Power delay product (PDP) is 415.9 fWs, and the area is 1.89μm2. The second and third approaches are
clocked SIS ADC and Sleep transistor SIS ADC. Both of them show significant improvement in power
dissipation as 57.5% & 71% respectively. Whereas PDP is 229.7 fWs and area is 0.05 μm2 for Clocked SIS
ADC and 107.3 fWs & 1.94 μm2 for Sleep transistor SIS ADC.
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATIONVLSICS Design
In this paper we report effect of optical illumination on Silicon MOSFET. The MOSFET has been studied in respect of current voltage, transconductance admittance and scattering parameters. Gain analysis of the Silicon MOSFET is done in dark and under optical illumination. The device is fabricated using ATHENA™ process simulator and the device simulation is performed using ATLAS™ from SILVACO international. The simulation results indicate potential of MOSFET as optically sensitive structure which can be used for increase in data transmission/reception rates, reduction of interconnect delays, elimination of clock skew, or as a photodetector for optoelectronic applications at low and radio frequency.
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATIONVLSICS Design
In this paper we report effect of optical illumination on Silicon MOSFET. The MOSFET has been studied in
respect of current voltage, transconductance admittance and scattering parameters. Gain analysis of the
Silicon MOSFET is done in dark and under optical illumination. The device is fabricated using ATHENA™
process simulator and the device simulation is performed using ATLAS™ from SILVACO international.
The simulation results indicate potential of MOSFET as optically sensitive structure which can be used
for increase in data transmission/reception rates, reduction of interconnect delays, elimination of clock
skew, or as a photodetector for optoelectronic applications at low and radio frequency.
Design and Realization of 2.4GHz Branch-line CouplerQuang Binh Pham
In the scope of this paper, a branch-line coupler working at 2.4GHz is designed and realized. The experiment results are consequently compared to the simulation results.
Design of ultra low power 8 channel analog multiplexer using dynamic threshol...VLSICS Design
The design of an ultra low voltage, low power high
speed 8 channel Analog multiplexer in 180nm CMOS
technology is presented. A modified transmission ga
te using a dynamic threshold voltage MOSFET
(DTMOS
)
is employed in the design. The design is optimized
with respect to critical requirements like short
switching time, low power dissipation, good lineari
ty and high dynamic range with an operating voltage
of
0.4V. The ON and OFF resistances achieved are 32 oh
ms and 10Mohms respectively with a switching
speed of 10MHz. The power dissipation obtained is a
round 2.65uW for a dynamic range of 1uV to 0.4V.
SAF ANALYSES OF ANALOG AND MIXED SIGNAL VLSI CIRCUIT: DIGITAL TO ANALOG CONVE...VLSICS Design
Digital to analog converter is widely used mixed-signal circuit. Testing of analog and mixed signals faces
lots of challenges due to the wide range of circuits and unavailability of one appropriate fault model. SAF
(stuck_at_Fault), Stuck_open and stuck_short fault model at transistor level is used in this paper. Furtherthese fault models are used to analyze the effects on the
characteristics parameter of 3-bit R-2R DAC.
Design of 6 bit flash analog to digital converter using variable switching vo...VLSICS Design
This paper presents the design of 6-bit flash analog to digital Converter (ADC) using the new variable
switching voltage (VSV) comparator. In general, Flash ADCs attain the highest conversion speed at the
cost of high power consumption. By using the new VSV comparator, the designed 6-bit Flash ADC exhibits
significant improvement in terms of power and speed of previously reported Flash ADCs. The simulation
result shows that the converter consumes peak power 2.1 mW from a 1.2 V supply and achieves the speed of
1 GHz in a 65nm standard CMOS process. The measurement of maximum differential and integral
nonlinearities (DNL and INL) of the Flash ADC are 0.3 LSB and 0.6 LSB respectively.
Extremely Low Power FIR Filter for a Smart Dust Sensor ModuleCSCJournals
Digital filters are common components in many applications today, also in for sensor systems, such as large-scale distributed smart dust sensors. For these applications the power consumption is very critical, it has to be extremely low. With the transistor technology scaling becoming more and more sensitive to e.g. gate leakage, it has become a necessity to find ways to minimize the flow of leakage in current CMOS logic. This paper studies sub-threshold source coupled logic (STSCL) in a 45-nm process. The STSCL can be used instead of traditional CMOS to meet the low power and energy consumption requirements. The STSCL style is in this paper used to design a digital filter, applicable for the audio interface of a smart dust sensor where the sample frequency will be 44.1 kHz. A finite-length impulse response (FIR) filter is used with transposed direct form structure and for the coefficient multiplication five-bit canonic signed digit [7] based serial/parallel multipliers were used. The power consumption is calculated along with the delay in order to present the power delay product (PDP) such that the performance of the sub-threshold logic can be compared with corresponding CMOS implementation. The simulated results shows a significant reduction in energy consumption (in terms of PDP) with the system running at a supply voltage as low as 0.2 V using STSCL.
An approach to Measure Transition Density of Binary Sequences for X-filling b...IJECEIAES
Switching activity and Transition density computation is an essential stage for dynamic power estimation and testing time reduction. The study of switching activity, transition densities and weighted switching activities of pseudo random binary sequences generated by Linear Feedback shift registers and Feed Forward shift registers plays a crucial role in design approaches of Built-In Self Test, cryptosystems, secure scan designs and other applications. This paper proposed an approach to find transition densities, which plays an important role in choosing of test pattern generator We have analyze conventional and proposed designs using our approache, This work also describes the testing time of benchmark circuits. The outcome of this paper is presented in the form of algorithm, theorems with proofs and analyses table which strongly support the same. The proposed algorithm reduces switching activity and testing time up to 51.56% and 84.61% respectively.
Comparative Performance Analysis of Low Power Full Adder Design in Different ...ijcisjournal
This paper gives the comparison of performance of full adder design in terms of area, power and delay in
different logic styles. Full adder design achieves low power using the Transmission Gate logic compared to
all other topologies such as Basic CMOS, Pass Transistor and GDI techniques but it make use of more
number of transistors compared to GDI. GDI occupies less area compared to all other logic design styles.
This paper presents the simulated outcome using Tanner tools and also H-Spice tool which shows power
and speed comparison of different full adder designs. All simulations have been performed in 90nm, 45nm
and 22nm scaling parameters using Predictive Technology Models in H-Spice tool.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Analysis of leakage current calculation for nanoscale MOSFET and FinFETIJTET Journal
Abstract—This paper presents logic level estimators of leakage current for nanoscale digital standard cell circuits. Here the proposed estimation model is based on the characterization of internal node voltages of cells and the characterization of leakage current in a single Field-Effect Transistor (FET). Finally the estimation model allowed direct implementation of supply voltage variation impact on leakage current and output voltage drop (loading effect).The technique is feasible for implementation in Hardware Description Language (HDL) and HDL cell models supporting leakage estimation at simulation time.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Co-Simulation Interfacing Capabilities in Device-Level Power Electronic Circu...IJPEDS-IAES
Power electronic circuit simulation today has become increasingly more demanding in both
the speed and accuracy. Whilst almost every simulator has its own advantages and disadvantages,
co-simulations are becoming more prevalent. This paper provides an overview of
the co-simulation capabilities of device-level circuit simulators. More specifically, a listing
of device-level simulators with their salient features are compared and contrasted. The
co-simulation interfaces between several simulation tools are discussed. A case study is
presented to demonstrate the co-simulation between a device-level simulator (PSIM) interfacing
a system-level simulator (Simulink), and a finite element simulation tool (FLUX).
Results demonstrate the necessity and convenience as well as the drawbacks of such a comprehensive
simulation.
Distortion Analysis of Differential AmplifierIOSR Journals
Abstract: The linearity of the CMOS is of major concern in the design of many analog circuits. In this paper the nonlinearity behavior of CMOS analog integrated circuits is investigated.The basic building block of analog integrated circuits such as differential amplifier with current mirror load have been chosen for harmonic distortion analysis.A mechanism to analyze the distortion of CMOS circuits in deep submicron technology that can be easily used to detect the distortion is built.The MOSFET model used for simulation is TSMC BSIM3 SPICE model from 0.13-μm CMOS process technology. HSPICE circuit simulator tool is used for distortion analysis of CMOS circuits. The MOS model used in this paper includes short-channel effects and gate-source capacitance, gate-drain capacitance, output resistance of MOS transistor. Analytical results are compared with simulation results and the influences of circuit parameters on circuit linearity are discussed.
Keywords: Analog Integrated Circuits, CMOSanalog integrated circuits, harmonic distortion, HSPICE, Short-channel effects, small signal analysis, transient analysis.
DESIGN OF IMPROVED RESISTOR LESS 45NM SWITCHED INVERTER SCHEME (SIS) ANALOG T...VLSICS Design
This work presents three different approaches which eliminates the resistor ladder completely and hence
reduce the power demand drastically of a Analog to Digital Converter. The first approach is Switched
Inverter Scheme (SIS) ADC; The test result obtained for it on 45nm technology indicates an offset error of
0.014 LSB. The full scale error is of -0.112LSB. The gain error is of 0.07 LSB, actual full scale range of
0.49V, worst case DNL & INL each of -0.3V. The power dissipation for the SIS ADC is 207.987 μwatts;
Power delay product (PDP) is 415.9 fWs, and the area is 1.89μm2. The second and third approaches are
clocked SIS ADC and Sleep transistor SIS ADC. Both of them show significant improvement in power
dissipation as 57.5% & 71% respectively. Whereas PDP is 229.7 fWs and area is 0.05 μm2 for Clocked SIS
ADC and 107.3 fWs & 1.94 μm2 for Sleep transistor SIS ADC.
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATIONVLSICS Design
In this paper we report effect of optical illumination on Silicon MOSFET. The MOSFET has been studied in respect of current voltage, transconductance admittance and scattering parameters. Gain analysis of the Silicon MOSFET is done in dark and under optical illumination. The device is fabricated using ATHENA™ process simulator and the device simulation is performed using ATLAS™ from SILVACO international. The simulation results indicate potential of MOSFET as optically sensitive structure which can be used for increase in data transmission/reception rates, reduction of interconnect delays, elimination of clock skew, or as a photodetector for optoelectronic applications at low and radio frequency.
EVALUATION OF OPTICALLY ILLUMINATED MOSFET CHARACTERISTICS BY TCAD SIMULATIONVLSICS Design
In this paper we report effect of optical illumination on Silicon MOSFET. The MOSFET has been studied in
respect of current voltage, transconductance admittance and scattering parameters. Gain analysis of the
Silicon MOSFET is done in dark and under optical illumination. The device is fabricated using ATHENA™
process simulator and the device simulation is performed using ATLAS™ from SILVACO international.
The simulation results indicate potential of MOSFET as optically sensitive structure which can be used
for increase in data transmission/reception rates, reduction of interconnect delays, elimination of clock
skew, or as a photodetector for optoelectronic applications at low and radio frequency.
Design and Realization of 2.4GHz Branch-line CouplerQuang Binh Pham
In the scope of this paper, a branch-line coupler working at 2.4GHz is designed and realized. The experiment results are consequently compared to the simulation results.
Design of ultra low power 8 channel analog multiplexer using dynamic threshol...VLSICS Design
The design of an ultra low voltage, low power high
speed 8 channel Analog multiplexer in 180nm CMOS
technology is presented. A modified transmission ga
te using a dynamic threshold voltage MOSFET
(DTMOS
)
is employed in the design. The design is optimized
with respect to critical requirements like short
switching time, low power dissipation, good lineari
ty and high dynamic range with an operating voltage
of
0.4V. The ON and OFF resistances achieved are 32 oh
ms and 10Mohms respectively with a switching
speed of 10MHz. The power dissipation obtained is a
round 2.65uW for a dynamic range of 1uV to 0.4V.
SAF ANALYSES OF ANALOG AND MIXED SIGNAL VLSI CIRCUIT: DIGITAL TO ANALOG CONVE...VLSICS Design
Digital to analog converter is widely used mixed-signal circuit. Testing of analog and mixed signals faces
lots of challenges due to the wide range of circuits and unavailability of one appropriate fault model. SAF
(stuck_at_Fault), Stuck_open and stuck_short fault model at transistor level is used in this paper. Furtherthese fault models are used to analyze the effects on the
characteristics parameter of 3-bit R-2R DAC.
Design of 6 bit flash analog to digital converter using variable switching vo...VLSICS Design
This paper presents the design of 6-bit flash analog to digital Converter (ADC) using the new variable
switching voltage (VSV) comparator. In general, Flash ADCs attain the highest conversion speed at the
cost of high power consumption. By using the new VSV comparator, the designed 6-bit Flash ADC exhibits
significant improvement in terms of power and speed of previously reported Flash ADCs. The simulation
result shows that the converter consumes peak power 2.1 mW from a 1.2 V supply and achieves the speed of
1 GHz in a 65nm standard CMOS process. The measurement of maximum differential and integral
nonlinearities (DNL and INL) of the Flash ADC are 0.3 LSB and 0.6 LSB respectively.
Extremely Low Power FIR Filter for a Smart Dust Sensor ModuleCSCJournals
Digital filters are common components in many applications today, also in for sensor systems, such as large-scale distributed smart dust sensors. For these applications the power consumption is very critical, it has to be extremely low. With the transistor technology scaling becoming more and more sensitive to e.g. gate leakage, it has become a necessity to find ways to minimize the flow of leakage in current CMOS logic. This paper studies sub-threshold source coupled logic (STSCL) in a 45-nm process. The STSCL can be used instead of traditional CMOS to meet the low power and energy consumption requirements. The STSCL style is in this paper used to design a digital filter, applicable for the audio interface of a smart dust sensor where the sample frequency will be 44.1 kHz. A finite-length impulse response (FIR) filter is used with transposed direct form structure and for the coefficient multiplication five-bit canonic signed digit [7] based serial/parallel multipliers were used. The power consumption is calculated along with the delay in order to present the power delay product (PDP) such that the performance of the sub-threshold logic can be compared with corresponding CMOS implementation. The simulated results shows a significant reduction in energy consumption (in terms of PDP) with the system running at a supply voltage as low as 0.2 V using STSCL.
An approach to Measure Transition Density of Binary Sequences for X-filling b...IJECEIAES
Switching activity and Transition density computation is an essential stage for dynamic power estimation and testing time reduction. The study of switching activity, transition densities and weighted switching activities of pseudo random binary sequences generated by Linear Feedback shift registers and Feed Forward shift registers plays a crucial role in design approaches of Built-In Self Test, cryptosystems, secure scan designs and other applications. This paper proposed an approach to find transition densities, which plays an important role in choosing of test pattern generator We have analyze conventional and proposed designs using our approache, This work also describes the testing time of benchmark circuits. The outcome of this paper is presented in the form of algorithm, theorems with proofs and analyses table which strongly support the same. The proposed algorithm reduces switching activity and testing time up to 51.56% and 84.61% respectively.
NO1 Uk best vashikaran specialist in delhi vashikaran baba near me online vas...Amil Baba Dawood bangali
Contact with Dawood Bhai Just call on +92322-6382012 and we'll help you. We'll solve all your problems within 12 to 24 hours and with 101% guarantee and with astrology systematic. If you want to take any personal or professional advice then also you can call us on +92322-6382012 , ONLINE LOVE PROBLEM & Other all types of Daily Life Problem's.Then CALL or WHATSAPP us on +92322-6382012 and Get all these problems solutions here by Amil Baba DAWOOD BANGALI
#vashikaranspecialist #astrologer #palmistry #amliyaat #taweez #manpasandshadi #horoscope #spiritual #lovelife #lovespell #marriagespell#aamilbabainpakistan #amilbabainkarachi #powerfullblackmagicspell #kalajadumantarspecialist #realamilbaba #AmilbabainPakistan #astrologerincanada #astrologerindubai #lovespellsmaster #kalajaduspecialist #lovespellsthatwork #aamilbabainlahore#blackmagicformarriage #aamilbaba #kalajadu #kalailam #taweez #wazifaexpert #jadumantar #vashikaranspecialist #astrologer #palmistry #amliyaat #taweez #manpasandshadi #horoscope #spiritual #lovelife #lovespell #marriagespell#aamilbabainpakistan #amilbabainkarachi #powerfullblackmagicspell #kalajadumantarspecialist #realamilbaba #AmilbabainPakistan #astrologerincanada #astrologerindubai #lovespellsmaster #kalajaduspecialist #lovespellsthatwork #aamilbabainlahore #blackmagicforlove #blackmagicformarriage #aamilbaba #kalajadu #kalailam #taweez #wazifaexpert #jadumantar #vashikaranspecialist #astrologer #palmistry #amliyaat #taweez #manpasandshadi #horoscope #spiritual #lovelife #lovespell #marriagespell#aamilbabainpakistan #amilbabainkarachi #powerfullblackmagicspell #kalajadumantarspecialist #realamilbaba #AmilbabainPakistan #astrologerincanada #astrologerindubai #lovespellsmaster #kalajaduspecialist #lovespellsthatwork #aamilbabainlahore #Amilbabainuk #amilbabainspain #amilbabaindubai #Amilbabainnorway #amilbabainkrachi #amilbabainlahore #amilbabaingujranwalan #amilbabainislamabad
Vaccine management system project report documentation..pdfKamal Acharya
The Division of Vaccine and Immunization is facing increasing difficulty monitoring vaccines and other commodities distribution once they have been distributed from the national stores. With the introduction of new vaccines, more challenges have been anticipated with this additions posing serious threat to the already over strained vaccine supply chain system in Kenya.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Forklift Classes Overview by Intella PartsIntella Parts
Discover the different forklift classes and their specific applications. Learn how to choose the right forklift for your needs to ensure safety, efficiency, and compliance in your operations.
For more technical information, visit our website https://intellaparts.com
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Cosmetic shop management system project report.pdfKamal Acharya
Buying new cosmetic products is difficult. It can even be scary for those who have sensitive skin and are prone to skin trouble. The information needed to alleviate this problem is on the back of each product, but it's thought to interpret those ingredient lists unless you have a background in chemistry.
Instead of buying and hoping for the best, we can use data science to help us predict which products may be good fits for us. It includes various function programs to do the above mentioned tasks.
Data file handling has been effectively used in the program.
The automated cosmetic shop management system should deal with the automation of general workflow and administration process of the shop. The main processes of the system focus on customer's request where the system is able to search the most appropriate products and deliver it to the customers. It should help the employees to quickly identify the list of cosmetic product that have reached the minimum quantity and also keep a track of expired date for each cosmetic product. It should help the employees to find the rack number in which the product is placed.It is also Faster and more efficient way.
Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
In this month's edition, along with this month's industry news to celebrate the 13 years since the group was created we have articles including
A case study of the used of Advanced Process Control at the Wastewater Treatment works at Lleida in Spain
A look back on an article on smart wastewater networks in order to see how the industry has measured up in the interim around the adoption of Digital Transformation in the Water Industry.
CFD Simulation of By-pass Flow in a HRSG module by R&R Consult.pptxR&R Consult
CFD analysis is incredibly effective at solving mysteries and improving the performance of complex systems!
Here's a great example: At a large natural gas-fired power plant, where they use waste heat to generate steam and energy, they were puzzled that their boiler wasn't producing as much steam as expected.
R&R and Tetra Engineering Group Inc. were asked to solve the issue with reduced steam production.
An inspection had shown that a significant amount of hot flue gas was bypassing the boiler tubes, where the heat was supposed to be transferred.
R&R Consult conducted a CFD analysis, which revealed that 6.3% of the flue gas was bypassing the boiler tubes without transferring heat. The analysis also showed that the flue gas was instead being directed along the sides of the boiler and between the modules that were supposed to capture the heat. This was the cause of the reduced performance.
Based on our results, Tetra Engineering installed covering plates to reduce the bypass flow. This improved the boiler's performance and increased electricity production.
It is always satisfying when we can help solve complex challenges like this. Do your systems also need a check-up or optimization? Give us a call!
Work done in cooperation with James Malloy and David Moelling from Tetra Engineering.
More examples of our work https://www.r-r-consult.dk/en/cases-en/
Automobile Management System Project Report.pdfKamal Acharya
The proposed project is developed to manage the automobile in the automobile dealer company. The main module in this project is login, automobile management, customer management, sales, complaints and reports. The first module is the login. The automobile showroom owner should login to the project for usage. The username and password are verified and if it is correct, next form opens. If the username and password are not correct, it shows the error message.
When a customer search for a automobile, if the automobile is available, they will be taken to a page that shows the details of the automobile including automobile name, automobile ID, quantity, price etc. “Automobile Management System” is useful for maintaining automobiles, customers effectively and hence helps for establishing good relation between customer and automobile organization. It contains various customized modules for effectively maintaining automobiles and stock information accurately and safely.
When the automobile is sold to the customer, stock will be reduced automatically. When a new purchase is made, stock will be increased automatically. While selecting automobiles for sale, the proposed software will automatically check for total number of available stock of that particular item, if the total stock of that particular item is less than 5, software will notify the user to purchase the particular item.
Also when the user tries to sale items which are not in stock, the system will prompt the user that the stock is not enough. Customers of this system can search for a automobile; can purchase a automobile easily by selecting fast. On the other hand the stock of automobiles can be maintained perfectly by the automobile shop manager overcoming the drawbacks of existing system.
COLLEGE BUS MANAGEMENT SYSTEM PROJECT REPORT.pdfKamal Acharya
The College Bus Management system is completely developed by Visual Basic .NET Version. The application is connect with most secured database language MS SQL Server. The application is develop by using best combination of front-end and back-end languages. The application is totally design like flat user interface. This flat user interface is more attractive user interface in 2017. The application is gives more important to the system functionality. The application is to manage the student’s details, driver’s details, bus details, bus route details, bus fees details and more. The application has only one unit for admin. The admin can manage the entire application. The admin can login into the application by using username and password of the admin. The application is develop for big and small colleges. It is more user friendly for non-computer person. Even they can easily learn how to manage the application within hours. The application is more secure by the admin. The system will give an effective output for the VB.Net and SQL Server given as input to the system. The compiled java program given as input to the system, after scanning the program will generate different reports. The application generates the report for users. The admin can view and download the report of the data. The application deliver the excel format reports. Because, excel formatted reports is very easy to understand the income and expense of the college bus. This application is mainly develop for windows operating system users. In 2017, 73% of people enterprises are using windows operating system. So the application will easily install for all the windows operating system users. The application-developed size is very low. The application consumes very low space in disk. Therefore, the user can allocate very minimum local disk space for this application.
1. See discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/304348330
Comparison of Level 1, 2 and 3 MOSFET's
Technical Report · December 2014
DOI: 10.13140/RG.2.1.1616.3442
CITATIONS
0
READS
7,362
1 author:
Twesha Patel
University of Texas at Arlington
6 PUBLICATIONS 0 CITATIONS
SEE PROFILE
All content following this page was uploaded by Twesha Patel on 23 June 2016.
The user has requested enhancement of the downloaded file.
2. Comparison of Level 1, 2 and 3 MOSFET’s
Twesha Patel
Course: Advanced Electronics, Instructor: Prof. Alan Davis, Semester: Fall 2014,
Department of Electrical Engineering, The University of Texas, Arlington
(Dated: December 3, 2014)
Abstract- The scaling of MOS technology to nanometer sizes leads to the
development of physical and predictive models for circuit simulation that cover AC,
RF, DC, temperature, geometry, bias and noise characteristics (1). This paper
addresses the comparison between level 1,2 and 3 MOSFETs. The results are
examined using SPICE (Simulation Program with Integrated Circuit Emphasis).
Drain current versus drain-source voltage characteristics are plotted to display the
differences between them.
I. INTRODUCTION
The downscaling of transistor dimensions over the past years is an evolutionary process
to provide superior performance, reduced size and cost. To assist this miniaturization of
devices, new simulators and device models have been invented.
Everywhere from designing of an IC, manufacturing to fabrication technology
development, modeling of device plays a major role in the advancement of Metal oxide
semiconductor technology. Considering the real time effects is essential while simulating
these device models. The SPICE model uses variety of parasitic circuit elements and
some process related parameters. The circuit designer can control these parameters and
syntax for MOSFET is given by
. MODEL <model name> NMOS [model parameters]
. MODEL <model name> PMOS [model parameters]
II. DEVICE MODELLING
To describe the performance of a device in mathematical terms, device modeling can be
used. Theoretical or empirical considerations, or both can be used to derive a model. A
few parameters along with the characterization can be used to build a desired model.
Quality of approximation and its complexity are often traded while establishing a model
making procedure. When making these tradeoffs, an engineer considers factors such as
intended use of the model and the required accuracy.
3. To create an understanding of the behavior of FET, rather than elemental models for a
circuit simulation analytical models were built. With the new innovations and
development of SPICE, these models were used as elemental models of the FETs.
III. SPICE MODELS
SPICE is a program used for simulation of electrical circuits. PSPICE (Orcad, Cadence
Design Systems), HSPICE (Synopsis), SPECTRE (Cadence Design Systems), Eldo are
some of the major commercial circuit simulators available in the market.
SmartSPICE (SiIvaco), Smash (Dolphin Integration), Saber (Analogy), APLAC (APLAC
Solutions), TSPICE (Tanner Research) etc. are few more softwares available for
simulation of complex circuits.
SPICE simulator and SPICE device models are the two distinct parts of SPICE. The
simulator uses mathematical models to replicate the behavior of an actual electronic
device or circuit. Simulation software allows for modeling of circuit operation and is an
invaluable analysis tool.
Device models used by SPICE (Simulation Program for Integrated Circuit Engineering)
simulators can be divided into three classes:
1. First Generation Models (Level 1, Level 2, Level 3 models)
2. Second Generation Models (BISM, BSIM2, HSPICE Level 28)
3. Third Generation Models (Level 7, Level 48, BSIM3, etc.)
Local stress, transistors operating in the sub-threshold region, short channel effects, noise
calculations, gate leakage (tunneling), temperature variations and the equations used are
better for circuit simulation in the newer generation models.
A. First Generation
Rather than focusing on the mathematical representation, these models express the
original purpose of a physically based analytical MOSFET model, with all geometry
dependent included in the model equations.
The First model generation is comprised of
1. LEVEL 1 model- When detailed analog models are not needed, these are often used to
simulate large digital circuits. They provide a high level of accuracy for timing
calculations and low simulation time. For more precision LEVEL 6 IDS model or one of
the BSIM models (LEVEL 13, 28, 39, 47, 49, 53, 54, 57, 59, and 60) can be used for a
4. detailed description.
2. LEVEL 2 model-The bulk charge effects on current are considered in this model.
3. LEVEL 3 model-The accuracy of this model is similar to that of LEVEL 2 but it offers
lesser simulation time and has a greater tendency to converge.
Fig. 1. Schematic of Level 1,2 and 3 MOSFET’s (4)
1. LEVEL 1 (Schichman-Hodges Model)
The model is applicable to devices with gate length greater than 10𝜇𝑚. This model is a
first order approximation of practical output of long channel MOS device. This model
takes into consideration channel length modulation by using a parameter L and body bias
effect is taken care by the transconductance. Whenever the channel length reduces below
4 mm, these parameters become dependent on externally applied voltages and other
parameters. The drain current (Ids) values will be lesser than the practically obtained
values if the channel length falls below this value and the model fails to include the
parameters related to short and narrow channel effects (3).
Gradual channel approximation and the square law for the saturated drain current are the
simplifications employed in this model (1).
MODEL EQUATIONS:
(a.) Drain current, Ids Equations:
174
Examples M1 14 2 13 0 PNOM L=25u W=12u
M13 15 3 0 0 PSTRONG
M16 17 3 0 0 PSTRONG M=2
M28 0 2 100 100 NWEAK L=33u W=12u
+ AD=288p AS=288p PD=60u PS=60u NRD=14 NRS=24 NRG=10
Model form .MODEL <model name> NMOS [model parameters]
.MODEL <model name> PMOS [model parameters]
Description The MOSFET is modeled as an intrinsic MOSFET using ohmic resistances in se
drain, source, gate, and bulk (substrate). There is also a shunt resistance (RDS) i
with the drain-source channel.
Arguments and options
L and W
are the channel length and width, which are decreased to get the effective ch
length and width. They can be specified in the device, .MODEL (model de
.OPTIONS (analysis options) statements. The value in the device statemen
the value in the model statement, which supersedes the value in the .OPTION
Defaults for L and W can be set in the .OPTIONS statement. If L or W defa
set, their default value is 100 u.
[L=<value>] [W=<value>] cannot be used in conjunction with Mon
analysis.
Drain
RD
Cgb
Cgd Cbd
RB
Bulk
Idrain
Cbs
Cgs
RG
Gate
Source
RS
5. The LEVEL 1 model does not include the carrier saturation effect, carrier mobility
degradation or the weak inversion model. The drain current equations for different
regions of operation are given below:
Cutoff Region (Vgs ≤Vth )
Ids = 0.0
Linear Region (𝑉!" > 𝑉
!" − 𝑉!!)
𝐼!"= KP.
!"##
!"##
. 1 + 𝜆. 𝑉!" . 𝑉
!" − 𝑉!! −
!"#
!
. 𝑉!"
(1)
Saturation Region (𝑉!" ≥ 𝑉
!" − 𝑉!!)
𝐼!" =
!"
!
.
!!""
!!""
. 1 + 𝜆. 𝑉!" . (𝑉
!" − 𝑉!!)!
(2)
(b.) Effective Channel Length and Width:
The Level 1 model calculates the effective channel length and width from the drawn
length and width:
Leff = Lscaled Ŋ LMLT + XLscaled – 2 . (LDscaled + DELscaled) (3)
Weff = M Ŋ (Wscaled WMLT + XWscaled – 2 . WDscaled) (4)
(LMLT-Length shrink factor
WMLT-Diffusion layer and width shrink factor
𝐿𝐷!"#$%&- Lateral diffusion into channel from source and drain diffusion
𝑊𝐷!"#$%& − Lateral diffusion into channel from bulk along width
XL, XW- Accounts for masking and etching effects
DEL- Channel length reduction factor.)
(c.) Saturation Voltage, 𝑉!"#:
6. The channel pinch-off at the drain side develops the saturation voltage for LEVEL 1
MOSFET model which is given by:
Vsat = Vgs – Vth
The carrier velocity saturation effects are not included in the LEVEL 1 model.
(d.) Threshold Voltage, Vth :
𝑉!" < 0 Vth = Vbi + ΥŊ ( 𝜙 +
!
!
!!"
!
) (5)
𝑉!" ≥ 0 Vth = Vbi+ Υ Ŋ ( 𝜙 + Vsb)1/2 (6)
The built-in voltage (Vbi) in the preceding equations are given by:
Vbi = Vfb + 𝜙 (7)
𝑉!" = 𝑉𝑇𝑂 − Υ. 𝜙
(VTO- Zero bias threshold voltage for a large device)
TABLE I
BASIC MODEL PARAMETERS (1)
Name Units Default Description
LEVEL 1.0 LEVEL 1 is the
Schichman-Hodges
model.
COX F/m2
3.453e-4 Oxide capacitance
per unit gate area.
LAMBDA, 𝜆 V-1
0.0 Channel-length
modulation.
7. KP (BETA-𝛽) A/V2
Intrinsic
transconductance
parameter.
TABLE II
THRESHOLD VOLTAGE PARAMETERS (1)
GAMMA, 𝛾 𝑉 0.5276 Body effect factor.
NSUB cm-3
1e15 Bulk surface doping.
PHI, 𝜙 V 0.576 Surface inversion
potential.
VTO, Vt V Zero-bias threshold
voltage.
TABLE III
EFFECTIVE WIDTH AND LENGTH PARAMETERS (1)
DEL m 0.0 Channel length
reduction on each
side.
LD m Default-0.0 Lateral diffusion into
channel from source
and drain diffusion.
LMLT 1.0 Length shrink factor.
WD M 0.0 Lateral diffusion into
channel from bulk
along width.
WMLT 1.0 Diffusion layer and
width shrink factor.
XL m 0.0 Accounts for
masking and etching
effect.
8. XW m 0.0 Accounts for
masking and etching
effect.
2. LEVEL 2 (Grove-Frohman Model)
LEVEL 2 is an advanced version of LEVEL 1 and implements Meyer’s model. LEVEL 1
doesn’t account for the short channel effects and is based on the assumption that
threshold voltage is constant and varies only with the substrate voltage.
This simplified semi-empirical model gives a detailed description of the mobility
degradation by the vertical field, the threshold region and the depletion region. It is used
for very long- channel devices with gate length of approximately 10𝜇𝑚. (1)
MODEL EQUATIONS:
(a.) Drain current, Ids Equations:
Drain current for LEVEL 2 models is lower than that of LEVEL 1 models and is given
by:
Cutoff Region (𝑉
!" ≤ 𝑉!!)
Ids=0.0
On Region (𝑉
!" > 𝑉!!)
𝐼!" = 𝛽. 𝑉
!" − 𝑉!" −
!.!!"
!
. 𝑉!" −
!
!
. 𝛾. 𝜙 + 𝑉!" + 𝑉!"
!.!
− 𝜙 + 𝑉!"
!.!
(8)
𝜂 = 1 + 𝐷𝐸𝐿𝑇𝐴.
!.!!"
!.!"#.!!""
; (9)
DELTA- Controls the curvature of piecewise linear corners.
9. 𝛽 = 𝐾𝑃.
!!""
!!""
(10)
(b.) Effective Channel Length and Width:
The drawn length and width are used to calculate the effective channel length and width
for LEVEL 2 and can be written as:
Leff = Lscaled Ŋ LMLT + XLscaled – 2. (LDscaled + DELscaled) (11)
Weff = M Ŋ (Wscaled Ŋ WMLT + XWscaled – 2 . WDscaled) (12)
LREFeff = LREFscaled Ŋ LMLT + XLscaled – 2. (LDscaled + DELscaled) (13)
WREFeff = M Ŋ (WREFscaled Ŋ WMLT + XWscaled – 2. WDscaled) (14)
(LREF, WREF- Channel length and width reference respectively)U
(c.) Saturation Voltage, Vdsat:
Due to channel pinch off at the drain side, the program calculates the saturation voltage.
If the corrections for small-size effects are included, then:
𝑉!"# =
!!"!!!"
!
+ 0.5.
!!
!!
. 1 − 1 + 4.
!!
!!
.
!!"!!!"
!
+ 𝜙 + 𝑉!"
!/!
(15)
Vdsat = Vsat
Considering the velocity saturation effect,
𝑉!"#$ = 𝑉!"# + 𝑉
! − (𝑉!"# − 𝑉
!)!/!
(16)
The following equation calculates the Vc value used in the preceding equation:
Vc = 𝐸!"#$ Ŋ Leff
10. 𝐸!"#$ = Drain-source critical field.
(d.) Threshold Voltage, Vth:
The effective threshold voltage including the device size effects and the terminal
voltages is given by:
𝑉!! = 𝑉!" + 𝛾. (𝜙 + 𝑉!")!/!
(17)
The following equation calculates the Vbi value used in the preceding equation:
𝑉!" = 𝑉𝑇𝑂 − 𝛾 𝜙+(𝜂 − 1)(𝜙 + 𝑉!")!/!
(18)
LEVEL 2 uses VTO, 𝛾 and 𝜙 to calculate the threshold voltage.
(e.) Channel Length Modulation:
The LEVEL 2 MOS model modifies the Ids current to include the channel length
modulation effect:
𝐼!" =
!!"
!!!!!"
(19)
For λ=LAMBDA<0; VMAX >0
λ =
!!
!"##.!!"".!!"
.
!"#$.!!
!. !"##.!!""
!
+ 𝑉!" − 𝑉!"#$ −
!"#$.!!
!. !"##.!!""
(20)
NEFF-Total channel charge (fixed and mobile) coefficient
VMAX-Maximum drift velocity of carriers
For λ=LAMBDA<0; VMAX =0
11. λ =
!!
!!"".!!"
.
!!"!!!"#$
!
+ 1 +
!!"!!!"#$
!
!
(21)
𝑋! =
2. 𝐸!"
𝑞. 𝑁𝑆𝑈𝐵
NSUB-Bulk surface doping
(f.) Mobility Reduction, 𝜇!"":
The mobility of carriers in the channel decreases as the carriers' speeds approach their
scattering limited velocity.
If MOB=0, 𝜇!"" < 𝑈0 (default):
𝜇!"" = 𝑈0.
!"#$%.!!"
!"#.(!!"!!!!!!"#$.!!")
!"#$
(22)
𝑉
!" < 𝑉!!, 𝜇!"" = 𝑈0:
𝜇!"" = 𝑈0.
!"#$%.!!"
!"#.(!!"!!!!)
!"#$
(23)
TABLE IV
BASIC MODEL PARAMETERS (1)
Name Units Default Description
LEVEL 2.0 LEVEL 2 is the
Grove-Frohman
model.
COX F/m2
3.453e-4 Oxide capacitance
per unit gate area.
12. ECRIT V/cm 0.0 Critical electric field
for carrier velocity
saturation.
LAMDA, 𝜆 V-1
0.0 Channel length
modulation.
NEFF 1.0 Total channel charge
(fixed and mobile)
coefficient.
VMAX m/s 0.0 Maximum drift
velocity of carriers
KP (BETA-𝛽) A/V2
2.0e-5 Intrinsic
transconductance
parameter.
TABLE V
THRESHOLD VOLTAGE PARAMETERS (1)
GAMMA, 𝛾 𝑉 0.5276 Body effect factor.
NSUB cm-3
1e15 Bulk surface doping.
PHI, 𝜙 V 0.576 Surface inversion
potential.
VTO, Vt V Zero-bias threshold
voltage.
DELTA 0.0 Narrow width factor
for adjusting
threshold
TABLE VI
EFFECTIVE WIDTH AND LENGTH PARAMETERS (1)
DEL m 0.0 Channel length
reduction on each
side.
LD m Default-0.0 Lateral diffusion into
channel from source
and drain diffusion.
13. LMLT 1.0 Length shrink factor.
LREF m 0.0 Channel length
reference.
WD m 0.0 Lateral diffusion into
channel from bulk
along width.
WMLT 1.0 Diffusion layer and
width shrink factor.
WREF m 0.0 Channel width
reference
XL, XW m 0.0 Accounts for
masking and etching
effect.
TABLE VII
MOBILITY PARAMETERS (1)
MOB 0.0 MOB=0 or MOB=7.
NOTE: MOB=7
invokes the channel
length modulation
and mobility
equations of
MOSFET LEVEL 3.
THETA V-1
0.0
Mobility modulation
when MOB=7
UCRIT V/cm 1.0e4 Critical field for
mobility degradation
UEXP 0.0 Critical field
exponent which
characterizes surface
mobility degradation
14. UO cm2
/V-s 600 (N)
250 (P)
Low-field bulk
mobility.
3. LEVEL 3 (Empirical Model)
LEVEL 3 is developed to overcome the observed shortcomings of Level 2. It is more
efficient mathematically and more accurate as compared to LEVEL 2. LEVEL 3 model is
an improvement over LEVEL 2 model with simple equations and many empirical
constants. As the name suggests this model is derived from empirical relations between
practical data obtained from experiments and the theoretical models already existent.
With a structure similar to LEVEL 2, this is a semi-empirical model that places more
emphasis on parameter extraction. Drain-induced barrier lowering (DIBL) and mobility
degradation by the lateral field like physical effects are also included. These models are
applicable to long-channel devices with gate length of approximately 2 𝜇𝑚 (1).
MODEL EQUATIONS:
(a.) Drain current, Ids Equations:
Drain current equations for LEVEL 3 are given by:
Cutoff Region (Vgs <Vth)
Ids = 0
On Region (Vgs >Vth)
𝐼!" = 𝛽. 𝑉
!" − 𝑉!! −
!!!"
!
. 𝑉!" . 𝑉!" (24)
𝛽 = 𝐾𝑃.
!!""
!!""
; 𝐾. 𝑃 = 𝑢!"". 𝐶𝑂𝑋 (25)
𝑓𝑏 = 𝑓! +
!.!!
!. !! !!"
(26)
𝑓! specifies the narrow width effect and is given by:
𝑓! =
!"#$%
!!""
. 0.25.
!!.!!"
!"#
(27)
15. 𝑓! specifies the short channel effects and is given by:
𝑓! = 1 −
!"!"#$%&
!!""
⇒
!"!"#$%&!!!
!"!"#$%&
. 1 −
!!
!!!"#$%&!!!
!
−
!"!"#$%&
!"!"#$%&
(28)
𝑊
! = 𝑋!. 𝜙 + 𝑉!"
(b.) Saturation Voltage, Vdsat:
Due to the channel pinch-off at the drain side, LEVEL 3 calculates the saturation voltage
considering the VMAX parameter which specifies the reduction of the saturation voltage
due to the carrier velocity saturation effect.
𝑉!"# =
!!"!!!!
!!!"
(29)
𝑉!"#$ = 𝑉!"# + 𝑉
! − 𝑉!"#
!
+ 𝑉
!
! !.!
(30)
(c.) Threshold Voltage, Vth:
The following equation calculates the effective threshold voltage, including the device
size and terminal voltage effects:
𝑉!! = 𝑉!" −
!.!"!!!!
!!".!"##!
⇒ 𝐸𝑇𝐴 ⇒ 𝑉!" + Υ. ϕ + 𝑉!" . 𝑓!. +𝑓!. (𝜙 + 𝑉!") (31)
The following equation calculates the vbi value used in the preceding equation:
𝑉!" = 𝑉!" + ϕ = 𝑉𝑇𝑂 − 𝐺𝐴𝑀𝑀𝐴. ϕ (32)
(e.) Effective Channel Length and Width:
16. The following equations are used to determine the effective channel length and width for
the LEVEL 3 model:
Leff = Lscaled Ŋ LMLT + XLscaled – 2. (LDscaled + DELscaled) (34)
W
eff
= M Ŋ (W
scaled
Ŋ WMLT + XW
scaled
– 2 .WD
scaled
) (35)
LREFF = LREFscaled Ŋ LMLT + XLscaled – 2.(LDscaled + DELscaled) (36)
WREFeff = M Ŋ (WREFscaled Ŋ WMLT + XWscaled – 2 . WDscaled) (37)
(f.)Effective Mobility, 𝜇!"":
The model defines the carrier mobility reduction due to the normal field as the effective
surface mobility (𝜇!).
For Vgs >Vth,
𝜇! =
!!
!!!"#!$(!!"!!!!)
(38)
VMAX>0
𝜇!"" =
!!
!!
!!"
!!
(39)
else ,
𝜇!"" = 𝜇!
(g.) Channel Length Modulation:
For 𝑉!" > 𝑉!"#$
VMAX=0
Δ𝐿 = 𝑋! 𝐾𝐴𝑃𝑃𝐴(𝑉!" − 𝑉!"#$) (40)
17. VMAX>0
Δ𝐿 = −
!!.!!
!
!
+
!!.!!
!
!
!
+ 𝐾𝐴𝑃𝑃𝐴. 𝑋!
!
(𝑉!" − 𝑉!"#$) (41)
𝐸! =
!!(!!!!!"#$)
!!"".!!"#$
= Lateral electric field at the pinch off point
TABLE VIII
BASIC MODEL PARAMETERS (1)
Name Units Default Description
LEVEL 3 LEVEL 3 is the
empirical model.
COX F/m2
3.453e-4 Oxide capacitance
per unit gate area.
ECRIT V/cm 0.0 Critical electric field
for carrier velocity
saturation.
LAMDA, 𝜆 V-1
0.0 Channel length
modulation.
NEFF 1.0 Total channel charge
(fixed and mobile)
coefficient.
VMAX m/s 0.0 Maximum drift
velocity of carriers
KP (BETA-𝛽) A/V2
2.0e-5 Intrinsic
transconductance
parameter.
TABLE IX
THRESHOLD VOLTAGE PARAMETERS (1)
GAMMA, 𝛾 𝑉 0.5276 Body effect factor.
18. NSUB cm-3
1e15 Bulk surface doping.
PHI, 𝜙 V 0.576 Surface inversion
potential.
VTO, Vt V Zero-bias threshold
voltage.
DELTA 0.0 Narrow width factor
for adjusting
threshold.
ETA 0.0 Static feedback factor
for adjusting
threshold
TABLE X
EFFECTIVE WIDTH AND LENGTH PARAMETERS (1)
DEL m 0.0 Channel length
reduction on each
side.
LD m Default-0.0 Lateral diffusion into
channel from source
and drain diffusion.
LMLT 1.0 Length shrink factor.
LREF m 0.0 Channel length
reference.
WD m 0.0 Lateral diffusion into
channel from bulk
along width.
WMLT 1.0 Diffusion layer and
width shrink factor.
WREF m 0.0 Channel width
reference
XL, XW m 0.0 Accounts for
masking and etching
effect.
24. surface component of VT0); NA (NMOS); ND (PMOS); U0 (Surface mobility µ0); RD
(Drain resistance); TOX (Oxide thickness tox); RS (Source resistance); RSH (Drain and
Source sheet resistance (Ω/□)) are the parameters used.
Fig. 5. Variation of Id with model parameter VTO for LEVEL 1 model (Copyright 1988 by
McGraw- Hill, Inc).
B. LEVEL 2
Level 2 is an analytical model that takes into account small geometry effects. New
parameters added are NFS (Fast surface state density which models sub threshold); NEFF
(Total channel charge coefficient); VMAX (Maximum drift velocity for carriers used for
modeling velocity saturation); DELTA (Channel width effect on VT); XJ (Junction depth
of source and drain). UCRIT (Critical electric field for mobility degradation), UTRA
(Transverse field coefficient for mobility degradation) and UEXP (Exponent coefficient
for mobility degradation) and produce a multiplicative surface mobility degradation
factor to multiply times KP and appears in Level 2 only.
Fig. 6. Variation of Id with gate voltage in LEVEL 2 model (Copyright 1988 by McGraw- Hill,
Inc).
4
4 -
- 11
11
4
4 -
- 12
12
4
4 -
- 19
19
DC SPICE Models: Level 2 (2/2)
–Equations
VT – Equation as derived previously
ID – Equations as derived previously with linear mode equation
times (1+λVDS) for continuity across linear-saturation boundary.
Both use Leff in place of L where:
Leff = L – 2 LD
–Key Parameters: What do they represent? See Kang and
Leblebici – Table 4.1
NMOS, PMOS (obvious) – MOSFET channel type
KP – process transconductance k‘
VTO (note O, not 0!) – zero substrate-bias threshold voltage VT0
GAMMA – substrate-bias or body-effect coefficient γ
PHI – twice the Fermi potential 2φF
LAMBDA – channel length modulation λ
4
4 -
- 20
20
25. C. LEVEL 3
Level 3 as the name describes is more empirical and less analytical than Level 2, which
permits simpler computation and improved convergence while sacrificing little accuracy.
Level 2 parameters such as NEFF, UTRA, UCRI and UEXP have been deleted. New
parameters important to this model are KAPPA (Saturation field factor); ETA (static
feedback on VT which models effect of VDS on VT); THETA (Mobility modulation
which models the effect of VGS on surface mobility).
Fig. 7. Id-Vds characteristics of NMOS for LEVEL 2 (A) and LEVEL 3 (B) model.
VI. CONCLUSION
From the above results we can conclude that Level 1 model is too approximated with the
number of fitting parameters too small. Also Level 1 can be used for preliminary circuit
simulations and appropriate for long channel and uniform-doping devices. The benefit
from Level 2 is small. Level 3 has higher accuracy and requires less time for calculations.
Level 3 is good for MOSFET down to about 2 microns.
The most challenging task to device models is the high accuracy fitting of device data
from different technologies. Along with quality, the ease of parameter extraction, number
of parameters, redundancy of parameters, correlation of parameters, etc. should also be
considered (2).
Device models are constantly developed, elaborated and refined to achieve best
description and prediction of the downscaling devices and to met the new challenges of
power dissipation, leakage management, short channel effects, etc. Deep understanding
of the underlying physical phenomena is required as well as competent use of
mathematical techniques to settle efficient and accurate modeling methodologies that
15
4
4 -
- 29
29
• BSIM2 (HSPICE Level 39): Good for small geometry MOSFETs
with L down to 0.2 micron and tox down to 36 Angstroms.
• HSPICE Level 28: BSIM with its problems solved; good choice
for HSPICE users.
• BSIM3 Version 3 (HSPICE Level 49): Most accurate, but
complex.
4
4 -
- 30
30
4.8 Comparison of the SPICE MOSFET Models
26. encompass constantly downscaling technologies. Now a huge emphasis is placed on
obtaining physics-based, simple and highly accurate analytical device models.
REFERENCES
[1] HSPICE® Reference Manual: MOSFET Models Version D-2010.12, December 2010
[2] SPICE Modeling of MOSFETs in Deep Submicron, GEORGE ANGELOV, MARLN
HRISTOV, Technical University of Sofia, Faculty f Electronic Engineering and Technology, ECAD
Laboratory.
[3] H. Shichman and D. A. Hodges, “Modeling and simulation of insulated-gate field-
effect transistor switching circuits,” IEEE Journal of Solid-State Circuits, SC-3, 285,
September 1968.
[4] ORCAD SPICE A/D Reference Manual, Version 9.0, October 1998.
View publication stats
View publication stats
![Comparison of Level 1, 2 and 3 MOSFET’s
Twesha Patel
Course: Advanced Electronics, Instructor: Prof. Alan Davis, Semester: Fall 2014,
Department of Electrical Engineering, The University of Texas, Arlington
(Dated: December 3, 2014)
Abstract- The scaling of MOS technology to nanometer sizes leads to the
development of physical and predictive models for circuit simulation that cover AC,
RF, DC, temperature, geometry, bias and noise characteristics (1). This paper
addresses the comparison between level 1,2 and 3 MOSFETs. The results are
examined using SPICE (Simulation Program with Integrated Circuit Emphasis).
Drain current versus drain-source voltage characteristics are plotted to display the
differences between them.
I. INTRODUCTION
The downscaling of transistor dimensions over the past years is an evolutionary process
to provide superior performance, reduced size and cost. To assist this miniaturization of
devices, new simulators and device models have been invented.
Everywhere from designing of an IC, manufacturing to fabrication technology
development, modeling of device plays a major role in the advancement of Metal oxide
semiconductor technology. Considering the real time effects is essential while simulating
these device models. The SPICE model uses variety of parasitic circuit elements and
some process related parameters. The circuit designer can control these parameters and
syntax for MOSFET is given by
. MODEL <model name> NMOS [model parameters]
. MODEL <model name> PMOS [model parameters]
II. DEVICE MODELLING
To describe the performance of a device in mathematical terms, device modeling can be
used. Theoretical or empirical considerations, or both can be used to derive a model. A
few parameters along with the characterization can be used to build a desired model.
Quality of approximation and its complexity are often traded while establishing a model
making procedure. When making these tradeoffs, an engineer considers factors such as
intended use of the model and the required accuracy.](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)