This document discusses a silicon accelerator technology that uses stacked 3D integrated circuits (3D ICs) and through silicon vias (TSVs) to enable a solid-state linear particle accelerator. Each 3D IC stage contains accelerating electrodes, drift tubes, an electrostatic lens, and digital controls. Multiple stages can be stacked to achieve higher particle energies. Applications include a nanobeam ion implanter for semiconductor manufacturing using millions of focused ion beams for digital lithography, replacing photolithography. This new approach could lower costs, increase yields, and enable higher performance integrated circuits.
Silicon photonics is an evolving technology in which data is transferred among computer chips by optical rays. Optical rays can carry far more data in less time than electrical conductors.
This presentation gives emphasis on the basics of silicon photonics
Silicon Photonics: A Solution for Ultra High Speed Data TransferIDES Editor
Silicon photonics is the integration of integrated
optics and photonics IC technologies in silicon. Silicon
photonics has recently attracted a great deal of attention since
it offers an opportunity for low cost solutions for various
applications ranging from telecommunications to chip-chip
inter connects. Two keys to this advancement are the increased
speed of communications (now at the speed of light) and the
increased amount of data that can be transmitted at once (i.e.,
bandwidth). Silicon photonics is the study and application of
photonic systems which use silicon as an optical medium.
The silicon is usually patterned with sub-micrometer
precision, into microphotonic components. These operate in
the infrared, most commonly at the 1.55 micrometer
wavelength used by most fiber optic telecommunication
systems. The silicon typically lies on top of a layer of silica in
what (by analogy with a similar construction in
microelectronics) is known as silicon on insulator (SOI). Today
the problems associated with multi-core processors with copper
interconnect are Latency, Bandwidth, Power dissipation,
Electromagnetic interference and Signal integrity. Micro
processor designers use the integration of number of
transistors that could be squeezed onto each chip to boost
computational horsepower. That in turn caused the amount
of waste heat that had to be dissipated from each square
millimeter of silicon to go up. One problem we are facing in
this effort is that micro processors with large numbers of cores
are not yet being manufactured. Fiber optics has a reputation
as an expensive solution because of high cost of hardware and
Fabrication is done using exotic materials which are costly.
The methods used in assembly and package of these
components are also expensive. A recent break through in
silicon photonics is in the development of a laser modulator
that encodes optical data at 40 billion bits per second. Finally
reached the goal of data transmission at 40 Gbps speed,
matching the fastest devices deployed today with least cost of
processing and showing the ultimate solutions to the problems
associated with copper interconnects in multi-core processors
and expensive fiber optics.
Silicon Photonics and Photonic NoCs: A Surveydrv11291
This document summarizes a survey on silicon photonics and photonic Networks-on-Chip (NoCs). It discusses why photonic interconnects could replace metallic interconnects due to issues like RC delays and data transfer rates. It describes early work on the idea of silicon photonics and how photonic NoCs would affect router structures and architectures. The document summarizes several proposed photonic NoC architectures, routers, and simulation tools. It discusses tradeoffs between latency, throughput, and power for different architectures. While photonic NoCs show potential for improved performance, the document concludes that design and fabrication tools still need development before they can be considered practically viable for multi-core systems-on-chips.
Nanotechnology enables routing information at the speed of light through photonic communication networks. Photonic band gaps and nano lasers are used to generate and amplify coherent light beams for optical switching and routing. Mirrors on the nano scale can be used as versatile routers by changing their orientation electrostatically to steer light and tightly regulate the angle. Applications include on-chip data communication, medical diagnostics, fusion energy, and laser defense. In conclusion, using nanotechnology tools like photonic band gaps, nano lasers and mirrors, information can be sent at the speed of light through photonic communication.
The document discusses photonic computing and silicon photonics. It describes three categories of photonic computing: photonic transistors, optical/quantum computing, and silicon photonics. Silicon photonics aims to integrate all optical transmission and reception functions directly onto silicon chips using standard CMOS fabrication techniques. This allows for the manufacturing of high-speed, low-cost photonic devices. The document examines the key components of silicon photonic devices, including lasers, modulators, and photodetectors. It explains how integrating these components enables data transmission speeds of 50 Gbps. Silicon photonics has applications in high-speed networking and computing. Major companies involved in developing these technologies include Intel, NEC, Samsung, and HP.
The group presented their thesis on improving the efficiency of amorphous silicon thin-film solar cells. They explored the optical and electrical properties of materials used in the cells and designed an optical structure. Simulations were run while varying layer thicknesses. The highest efficiency of 11.3% was achieved with identical materials for the i-layer and n-layer and using SnO2:F as the front contact. Future work could look at light trapping, multi-junction cells, and nanostructures to further improve efficiency above 12%.
Dr. Jim Hwang presents an overview of his program, GHz-THz Electronics, at the AFOSR 2013 Spring Review. At this review, Program Officers from AFOSR Technical Divisions will present briefings that highlight basic research programs beneficial to the Air Force.
A Proposed Silicon Optical Electronic Integrated Circuit with Monolithic Int...IOSR Journals
This proposed circuit integrates an LED, OPFET, and receiver circuit on a single silicon chip. The circuit aims to improve responsivity and quantum efficiency. It uses an optically controlled MESFET (OPFET) instead of a photodiode for light detection. The OPFET uses an indium tin oxide transparent gate for increased optical absorption. A two-layer silicon waveguide guides light on the chip. The receiver circuit extracts the photocurrent generated by the OPFET under illumination. The integrated circuit achieves high responsivity of 620 nm wavelength light and quantum efficiency of 88%, representing an improvement over previous optoelectronic devices.
Silicon photonics is an evolving technology in which data is transferred among computer chips by optical rays. Optical rays can carry far more data in less time than electrical conductors.
This presentation gives emphasis on the basics of silicon photonics
Silicon Photonics: A Solution for Ultra High Speed Data TransferIDES Editor
Silicon photonics is the integration of integrated
optics and photonics IC technologies in silicon. Silicon
photonics has recently attracted a great deal of attention since
it offers an opportunity for low cost solutions for various
applications ranging from telecommunications to chip-chip
inter connects. Two keys to this advancement are the increased
speed of communications (now at the speed of light) and the
increased amount of data that can be transmitted at once (i.e.,
bandwidth). Silicon photonics is the study and application of
photonic systems which use silicon as an optical medium.
The silicon is usually patterned with sub-micrometer
precision, into microphotonic components. These operate in
the infrared, most commonly at the 1.55 micrometer
wavelength used by most fiber optic telecommunication
systems. The silicon typically lies on top of a layer of silica in
what (by analogy with a similar construction in
microelectronics) is known as silicon on insulator (SOI). Today
the problems associated with multi-core processors with copper
interconnect are Latency, Bandwidth, Power dissipation,
Electromagnetic interference and Signal integrity. Micro
processor designers use the integration of number of
transistors that could be squeezed onto each chip to boost
computational horsepower. That in turn caused the amount
of waste heat that had to be dissipated from each square
millimeter of silicon to go up. One problem we are facing in
this effort is that micro processors with large numbers of cores
are not yet being manufactured. Fiber optics has a reputation
as an expensive solution because of high cost of hardware and
Fabrication is done using exotic materials which are costly.
The methods used in assembly and package of these
components are also expensive. A recent break through in
silicon photonics is in the development of a laser modulator
that encodes optical data at 40 billion bits per second. Finally
reached the goal of data transmission at 40 Gbps speed,
matching the fastest devices deployed today with least cost of
processing and showing the ultimate solutions to the problems
associated with copper interconnects in multi-core processors
and expensive fiber optics.
Silicon Photonics and Photonic NoCs: A Surveydrv11291
This document summarizes a survey on silicon photonics and photonic Networks-on-Chip (NoCs). It discusses why photonic interconnects could replace metallic interconnects due to issues like RC delays and data transfer rates. It describes early work on the idea of silicon photonics and how photonic NoCs would affect router structures and architectures. The document summarizes several proposed photonic NoC architectures, routers, and simulation tools. It discusses tradeoffs between latency, throughput, and power for different architectures. While photonic NoCs show potential for improved performance, the document concludes that design and fabrication tools still need development before they can be considered practically viable for multi-core systems-on-chips.
Nanotechnology enables routing information at the speed of light through photonic communication networks. Photonic band gaps and nano lasers are used to generate and amplify coherent light beams for optical switching and routing. Mirrors on the nano scale can be used as versatile routers by changing their orientation electrostatically to steer light and tightly regulate the angle. Applications include on-chip data communication, medical diagnostics, fusion energy, and laser defense. In conclusion, using nanotechnology tools like photonic band gaps, nano lasers and mirrors, information can be sent at the speed of light through photonic communication.
The document discusses photonic computing and silicon photonics. It describes three categories of photonic computing: photonic transistors, optical/quantum computing, and silicon photonics. Silicon photonics aims to integrate all optical transmission and reception functions directly onto silicon chips using standard CMOS fabrication techniques. This allows for the manufacturing of high-speed, low-cost photonic devices. The document examines the key components of silicon photonic devices, including lasers, modulators, and photodetectors. It explains how integrating these components enables data transmission speeds of 50 Gbps. Silicon photonics has applications in high-speed networking and computing. Major companies involved in developing these technologies include Intel, NEC, Samsung, and HP.
The group presented their thesis on improving the efficiency of amorphous silicon thin-film solar cells. They explored the optical and electrical properties of materials used in the cells and designed an optical structure. Simulations were run while varying layer thicknesses. The highest efficiency of 11.3% was achieved with identical materials for the i-layer and n-layer and using SnO2:F as the front contact. Future work could look at light trapping, multi-junction cells, and nanostructures to further improve efficiency above 12%.
Dr. Jim Hwang presents an overview of his program, GHz-THz Electronics, at the AFOSR 2013 Spring Review. At this review, Program Officers from AFOSR Technical Divisions will present briefings that highlight basic research programs beneficial to the Air Force.
A Proposed Silicon Optical Electronic Integrated Circuit with Monolithic Int...IOSR Journals
This proposed circuit integrates an LED, OPFET, and receiver circuit on a single silicon chip. The circuit aims to improve responsivity and quantum efficiency. It uses an optically controlled MESFET (OPFET) instead of a photodiode for light detection. The OPFET uses an indium tin oxide transparent gate for increased optical absorption. A two-layer silicon waveguide guides light on the chip. The receiver circuit extracts the photocurrent generated by the OPFET under illumination. The integrated circuit achieves high responsivity of 620 nm wavelength light and quantum efficiency of 88%, representing an improvement over previous optoelectronic devices.
This document describes Mandar Deshpande's PhD projects at UIC, including the design and development of an optically powered microactuator for use in a retinal implant. The microactuator was designed to integrate a micro-solar cell and piezoelectric thin film on a silicon chip in order to be powered by very low light levels at frequencies around 50 Hz. Fabrication involved developing processes to combine the silicon solar cell and piezoelectric actuator layers while addressing conflicts from high temperature steps. Testing demonstrated the working microactuator under illumination. Other projects included measuring piezoelectric thin film properties, fabricating a compliant MEMS manipulator, and designing a comb-drive based Coriolis flow sensor.
You will hear about an exciting new micromirror array designed and being prototyped at LLNL. It promises faster, more accurate motion and larger range than what is currently on the market. The new design will enable advanced applications in areas such as 3D image projection and high-speed focusable LIDAR, among others.
This document is a 31 page presentation by Dr. Lynn Fuller on Gallium Arsenide devices, technologies, and integrated circuits. It provides an overview and comparison of silicon and gallium arsenide, describes growth and processing techniques for GaAs such as molecular beam epitaxy, and details GaAs device technologies including MESFETs and basic processing steps for GaAs integrated circuits.
This document discusses gallium arsenide (GaAs), including its history, properties, manufacturing processes, applications, and cost. GaAs is a compound of gallium and arsenic atoms arranged in a cubic lattice. It has excellent electronic properties such as high electron mobility and saturated velocity. Its direct bandgap allows efficient light emission, making it useful for solar cells and optoelectronics. GaAs is manufactured through processes like Czochralski growth and epitaxy to produce wafers for devices. Though expensive, GaAs has applications in areas like wireless communication, satellites, and solar energy due to its high performance capabilities.
This document discusses radiation hardened chips. It defines radiation and describes the problems it can cause in electronics, such as ionization that leads to electric noise and signal spikes. This is a serious issue for devices used in space, around nuclear reactors, and during nuclear explosions. Radiation comes from sources like the Van Allen belts, cosmic rays, and residual radiation in packaging materials. The effects on electronics include total ionizing dose effects and single event upsets. To address this, chips are radiation hardened through design and manufacturing process techniques. There is a need for these hardened chips due to the hostile radiation environment in space.
The document summarizes the conception, construction, and testing of LIBO, a prototype linear accelerator module for a compact proton therapy facility. Key points:
- LIBO is a side-coupled linear accelerator structure operating at 3 GHz designed to boost the energy of a proton beam from 62 MeV to 200 MeV for cancer therapy applications.
- The design and construction of a prototype LIBO module is described, including the half-cell design, material selection, thermal stabilization, bridge couplers, and integration of permanent magnet quadrupoles.
- The prototype module was machined at CERN using numerical control and its components were brazed together under vacuum. RF measurements validated the electric field flatness was within 3
This document discusses radiation hardening techniques for digital circuits. It begins by explaining the need for radiation hardening in circuits used in space, military, and nuclear applications. It then covers various radiation sources and their effects on digital circuits like single event upsets. The document discusses two main approaches to radiation hardening - hardening by process which uses wide bandgap substrates, and hardening by design which includes techniques like triple modular redundancy, diode-based SEU clamping, and error correcting codes. It concludes that radiation hardening is essential for space applications but adds area and power overhead.
Radiation hardened chips are designed to resist damage from ionizing radiation like that encountered in space, around nuclear reactors, and near particle accelerators. They use techniques like hardened substrates, shielding, and error correction to prevent issues like data corruption from radiation. Major sources of damaging radiation include Van Allen belts, cosmic rays, solar particles, and nuclear reactions. Radiation hardening aims to let electronics reliably function in radiation-intensive environments like satellites and nuclear facilities.
This document provides an overview of the LABOCA instrument on APEX. It describes LABOCA as a 295 bolometer camera operating at 345 GHz installed on the APEX 12m telescope in Chile. Key details include the tertiary optics that couple light to the bolometer array, the semiconductor bolometers maintained at 300mK, and the data acquisition system. Observing modes include on-the-fly mapping and spiral scans over the 11.4' field of view to make deep submillimeter maps of the sky.
This document provides an overview of dye sensitized solar cells (DSSC). It discusses the principle and working of DSSCs, including the key components - a photosensitive dye, nanostructured semiconductor (typically TiO2), redox electrolyte, and two electrodes. Upon light absorption, electrons are injected from the dye into the semiconductor. The electrolyte regenerates the oxidized dye and transports electrons between the electrodes. The document outlines the preparation, applications, and commercial potential of DSSCs, noting their advantages over silicon solar cells.
Photon Extraction: the key physics for approaching solar cell efficiency limitsodmiller
This document discusses the fundamental limits of solar cell efficiency and the importance of photon extraction. It summarizes that the Shockley-Queisser model obscures important photon dynamics within solar cells. Explicitly designing for photon extraction is key to approaching the theoretical efficiency limits. Small imperfections in material quality or optical design can significantly reduce performance due to the non-linear relationship between efficiency and photon extraction. Recent record efficiencies achieved through improved rear reflectors and photon extraction techniques demonstrate there is still potential to surpass 33% for single junction cells.
This document provides a study guide for the Georgia Criterion-Referenced Competency Tests (CRCT) for grade 1. It includes an overview of the CRCT, test-taking strategies, and chapters focused on reading, English/language arts, and mathematics. The reading chapter provides activities to develop vocabulary and comprehension skills assessed on the CRCT, such as identifying words with multiple meanings, antonyms, synonyms, and suffixes. It also includes activities to analyze story elements, make predictions, and identify main ideas and details.
A storyboard is a visual map that uses pictures and descriptions to outline the key elements and flow of a project. It breaks down a story, presentation, website, video, animation or comic into individual pages, scenes or panels to show what will happen at each stage. Storyboards help plan multimedia projects and visual productions.
The document repeats the same sentence multiple times - "Katalina Matalina Upsadina Walkadina Hoca Poca Loca was her name." It states a name and identifies that it was her name, but provides no other context or information.
This document provides an overview and study guide for the Georgia Criterion-Referenced Competency Tests (CRCT) for grade 1. It describes what the CRCT measures, how questions are scored, and test-taking strategies. The guide is organized by subject and includes chapters on reading, English/language arts, and mathematics that provide activities and practice quizzes to help students prepare.
This document provides an overview of search engine optimization (SEO) best practices. It discusses the importance of tracking key metrics like keyword rankings, site traffic, and conversions. Content and site structure are emphasized as the first "leg" of SEO, including on-page keyword optimization and internal linking. Freshness through new content and inbound links are also covered as important factors for rankings. Tools for tracking and analytics are referenced throughout.
This document provides an overview of cloud computing, including definitions, benefits, challenges, and a roadmap for implementation. It defines cloud computing as providing on-demand access to computing resources and bills users based on usage. Benefits include reduced costs, increased flexibility and scalability. Challenges include security, integration with legacy systems, and vendor lock-in. The document provides guidance on assessing applications for the cloud, preparing IT systems, evaluating vendors, testing implementations, and measuring return on investment.
This document provides an overview of cloud computing, including definitions, benefits, challenges, and a roadmap for implementation. It defines cloud computing as providing on-demand access to computing resources and bills users based on usage. Benefits include reduced costs, increased flexibility and scalability. Challenges include security, integration with legacy systems, and vendor lock-in. The document provides guidance on assessing applications for the cloud, preparing IT systems, evaluating vendors, testing implementations, and measuring return on investment.
This document discusses the Consumer Price Index (CPI) which is used to measure inflation. It provides details on what the CPI measures, how it is calculated, its limitations and uses. Specifically, it notes that the CPI measures price changes of consumer goods and services purchased by urban consumers. It is calculated based on samples of retail prices collected monthly and adjusted for quality changes. While widely used, it has limitations in fully capturing cost of living changes.
This document provides an overview of the history and fundamentals of VLSI technology and fabrication. It discusses the transition from vacuum tubes to transistors, the development of integrated circuits, and Moore's Law of transistor scaling. The key steps in VLSI chip fabrication are described, including wafer manufacturing, deposition, patterning, etching, and metallization. CMOS technology is highlighted as enabling large-scale integration due to its low power dissipation. The syllabus outlines topics like crystal growth, photolithography, oxidation, and testing/packaging.
Viii. molecular electronics and nanoscienceAllenHermann
This document discusses molecular electronics and nanoscience. It begins by explaining why molecular electronics is an important area of research, as Moore's Law means devices will soon reach the molecular scale. It then describes two approaches to fabrication: top-down, continuing to shrink bulk semiconductor devices; and bottom-up, designing molecules with electronic function that can self-assemble. The document discusses various molecular systems and materials that could form the basis for single-molecule devices, including examples of molecules that could act as switches, sensors, or memory cells. It also reviews techniques for measuring conduction at the single-molecule level.
This document describes Mandar Deshpande's PhD projects at UIC, including the design and development of an optically powered microactuator for use in a retinal implant. The microactuator was designed to integrate a micro-solar cell and piezoelectric thin film on a silicon chip in order to be powered by very low light levels at frequencies around 50 Hz. Fabrication involved developing processes to combine the silicon solar cell and piezoelectric actuator layers while addressing conflicts from high temperature steps. Testing demonstrated the working microactuator under illumination. Other projects included measuring piezoelectric thin film properties, fabricating a compliant MEMS manipulator, and designing a comb-drive based Coriolis flow sensor.
You will hear about an exciting new micromirror array designed and being prototyped at LLNL. It promises faster, more accurate motion and larger range than what is currently on the market. The new design will enable advanced applications in areas such as 3D image projection and high-speed focusable LIDAR, among others.
This document is a 31 page presentation by Dr. Lynn Fuller on Gallium Arsenide devices, technologies, and integrated circuits. It provides an overview and comparison of silicon and gallium arsenide, describes growth and processing techniques for GaAs such as molecular beam epitaxy, and details GaAs device technologies including MESFETs and basic processing steps for GaAs integrated circuits.
This document discusses gallium arsenide (GaAs), including its history, properties, manufacturing processes, applications, and cost. GaAs is a compound of gallium and arsenic atoms arranged in a cubic lattice. It has excellent electronic properties such as high electron mobility and saturated velocity. Its direct bandgap allows efficient light emission, making it useful for solar cells and optoelectronics. GaAs is manufactured through processes like Czochralski growth and epitaxy to produce wafers for devices. Though expensive, GaAs has applications in areas like wireless communication, satellites, and solar energy due to its high performance capabilities.
This document discusses radiation hardened chips. It defines radiation and describes the problems it can cause in electronics, such as ionization that leads to electric noise and signal spikes. This is a serious issue for devices used in space, around nuclear reactors, and during nuclear explosions. Radiation comes from sources like the Van Allen belts, cosmic rays, and residual radiation in packaging materials. The effects on electronics include total ionizing dose effects and single event upsets. To address this, chips are radiation hardened through design and manufacturing process techniques. There is a need for these hardened chips due to the hostile radiation environment in space.
The document summarizes the conception, construction, and testing of LIBO, a prototype linear accelerator module for a compact proton therapy facility. Key points:
- LIBO is a side-coupled linear accelerator structure operating at 3 GHz designed to boost the energy of a proton beam from 62 MeV to 200 MeV for cancer therapy applications.
- The design and construction of a prototype LIBO module is described, including the half-cell design, material selection, thermal stabilization, bridge couplers, and integration of permanent magnet quadrupoles.
- The prototype module was machined at CERN using numerical control and its components were brazed together under vacuum. RF measurements validated the electric field flatness was within 3
This document discusses radiation hardening techniques for digital circuits. It begins by explaining the need for radiation hardening in circuits used in space, military, and nuclear applications. It then covers various radiation sources and their effects on digital circuits like single event upsets. The document discusses two main approaches to radiation hardening - hardening by process which uses wide bandgap substrates, and hardening by design which includes techniques like triple modular redundancy, diode-based SEU clamping, and error correcting codes. It concludes that radiation hardening is essential for space applications but adds area and power overhead.
Radiation hardened chips are designed to resist damage from ionizing radiation like that encountered in space, around nuclear reactors, and near particle accelerators. They use techniques like hardened substrates, shielding, and error correction to prevent issues like data corruption from radiation. Major sources of damaging radiation include Van Allen belts, cosmic rays, solar particles, and nuclear reactions. Radiation hardening aims to let electronics reliably function in radiation-intensive environments like satellites and nuclear facilities.
This document provides an overview of the LABOCA instrument on APEX. It describes LABOCA as a 295 bolometer camera operating at 345 GHz installed on the APEX 12m telescope in Chile. Key details include the tertiary optics that couple light to the bolometer array, the semiconductor bolometers maintained at 300mK, and the data acquisition system. Observing modes include on-the-fly mapping and spiral scans over the 11.4' field of view to make deep submillimeter maps of the sky.
This document provides an overview of dye sensitized solar cells (DSSC). It discusses the principle and working of DSSCs, including the key components - a photosensitive dye, nanostructured semiconductor (typically TiO2), redox electrolyte, and two electrodes. Upon light absorption, electrons are injected from the dye into the semiconductor. The electrolyte regenerates the oxidized dye and transports electrons between the electrodes. The document outlines the preparation, applications, and commercial potential of DSSCs, noting their advantages over silicon solar cells.
Photon Extraction: the key physics for approaching solar cell efficiency limitsodmiller
This document discusses the fundamental limits of solar cell efficiency and the importance of photon extraction. It summarizes that the Shockley-Queisser model obscures important photon dynamics within solar cells. Explicitly designing for photon extraction is key to approaching the theoretical efficiency limits. Small imperfections in material quality or optical design can significantly reduce performance due to the non-linear relationship between efficiency and photon extraction. Recent record efficiencies achieved through improved rear reflectors and photon extraction techniques demonstrate there is still potential to surpass 33% for single junction cells.
This document provides a study guide for the Georgia Criterion-Referenced Competency Tests (CRCT) for grade 1. It includes an overview of the CRCT, test-taking strategies, and chapters focused on reading, English/language arts, and mathematics. The reading chapter provides activities to develop vocabulary and comprehension skills assessed on the CRCT, such as identifying words with multiple meanings, antonyms, synonyms, and suffixes. It also includes activities to analyze story elements, make predictions, and identify main ideas and details.
A storyboard is a visual map that uses pictures and descriptions to outline the key elements and flow of a project. It breaks down a story, presentation, website, video, animation or comic into individual pages, scenes or panels to show what will happen at each stage. Storyboards help plan multimedia projects and visual productions.
The document repeats the same sentence multiple times - "Katalina Matalina Upsadina Walkadina Hoca Poca Loca was her name." It states a name and identifies that it was her name, but provides no other context or information.
This document provides an overview and study guide for the Georgia Criterion-Referenced Competency Tests (CRCT) for grade 1. It describes what the CRCT measures, how questions are scored, and test-taking strategies. The guide is organized by subject and includes chapters on reading, English/language arts, and mathematics that provide activities and practice quizzes to help students prepare.
This document provides an overview of search engine optimization (SEO) best practices. It discusses the importance of tracking key metrics like keyword rankings, site traffic, and conversions. Content and site structure are emphasized as the first "leg" of SEO, including on-page keyword optimization and internal linking. Freshness through new content and inbound links are also covered as important factors for rankings. Tools for tracking and analytics are referenced throughout.
This document provides an overview of cloud computing, including definitions, benefits, challenges, and a roadmap for implementation. It defines cloud computing as providing on-demand access to computing resources and bills users based on usage. Benefits include reduced costs, increased flexibility and scalability. Challenges include security, integration with legacy systems, and vendor lock-in. The document provides guidance on assessing applications for the cloud, preparing IT systems, evaluating vendors, testing implementations, and measuring return on investment.
This document provides an overview of cloud computing, including definitions, benefits, challenges, and a roadmap for implementation. It defines cloud computing as providing on-demand access to computing resources and bills users based on usage. Benefits include reduced costs, increased flexibility and scalability. Challenges include security, integration with legacy systems, and vendor lock-in. The document provides guidance on assessing applications for the cloud, preparing IT systems, evaluating vendors, testing implementations, and measuring return on investment.
This document discusses the Consumer Price Index (CPI) which is used to measure inflation. It provides details on what the CPI measures, how it is calculated, its limitations and uses. Specifically, it notes that the CPI measures price changes of consumer goods and services purchased by urban consumers. It is calculated based on samples of retail prices collected monthly and adjusted for quality changes. While widely used, it has limitations in fully capturing cost of living changes.
This document provides an overview of the history and fundamentals of VLSI technology and fabrication. It discusses the transition from vacuum tubes to transistors, the development of integrated circuits, and Moore's Law of transistor scaling. The key steps in VLSI chip fabrication are described, including wafer manufacturing, deposition, patterning, etching, and metallization. CMOS technology is highlighted as enabling large-scale integration due to its low power dissipation. The syllabus outlines topics like crystal growth, photolithography, oxidation, and testing/packaging.
Viii. molecular electronics and nanoscienceAllenHermann
This document discusses molecular electronics and nanoscience. It begins by explaining why molecular electronics is an important area of research, as Moore's Law means devices will soon reach the molecular scale. It then describes two approaches to fabrication: top-down, continuing to shrink bulk semiconductor devices; and bottom-up, designing molecules with electronic function that can self-assemble. The document discusses various molecular systems and materials that could form the basis for single-molecule devices, including examples of molecules that could act as switches, sensors, or memory cells. It also reviews techniques for measuring conduction at the single-molecule level.
This document provides an overview of VLSI (Very Large Scale Integration) and its applications. It discusses the history of integrated circuits from their inception in the late 1940s to today's advanced nanoscale technologies. Key topics covered include Moore's law of transistor scaling, digital circuit design challenges, CMOS fabrication processes, and examples of how VLSI is used in various electronic systems and devices.
Printed supercapacitors based on graphene and other carbon materials show promise for energy storage applications. Supercapacitors provide higher power density than batteries and longer lifespan than electrolytic capacitors. Graphene is a promising material for supercapacitors due to its large surface area, high conductivity, short ion diffusion path, and ability to be manufactured at scale. Methods for producing graphene-based supercapacitors include direct laser writing, lithography, and direct printing of graphene inks. These graphene microsupercapacitors show energy densities comparable to lithium-ion batteries with orders of magnitude higher power density. Further cost reductions could enable broader adoption of printed supercapacitors for portable devices, electric vehicles, and stationary energy storage.
This document discusses the evolution of microelectronics from 1947 to present day. Some key points include:
- The first transistor was demonstrated in 1947 at Bell Labs. Fairchild developed the first planar process and monolithic IC in the late 1950s.
- Moore's Law, introduced in 1965, predicted the exponential increase in transistor density over time which has guided technological progress.
- Advances like MOSFET structures, lithography, and new materials have enabled continued miniaturization and increased integration levels from SSI to VLSI.
- Challenges now involve sustaining Moore's Law as physical limits are approached, with new approaches like quantum computing on the horizon.
This document provides an overview of the history and fundamentals of VLSI technology and fabrication. It discusses how vacuum tubes in early electronic devices were replaced by transistors and integrated circuits. The first integrated circuits only had a few transistors, but due to continuous scaling and improvements in silicon manufacturing processes, modern chips can now contain over 1 billion transistors. The document outlines the key steps in fabricating integrated circuits, including crystal growth, wafer processing, lithography, deposition, doping, and packaging. It explains why silicon became the predominant semiconductor material and how CMOS technology replaced NMOS due to its lower power consumption. The syllabus covers topics like photolithography, diffusion, metallization, testing and packaging of integrated circuits.
This document discusses integrated circuit technology. It begins with an overview of the IC market breakdown by sector. It then discusses advantages of ICs such as smaller size, higher speed, lower power consumption compared to discrete components. The document provides a history of important IC inventions from 1904 to the present. It also discusses transistor scaling that has allowed achieving more complex ICs through reduced dimensions over time. Finally, it covers different IC design styles such as full custom, standard cell, gate array, and FPGA and their tradeoffs in terms of performance, cost, area, and time-to-market.
This document provides information about integrated circuit (IC) technology. It discusses the advantages of ICs over discrete components such as smaller size, higher speed, and lower power consumption. It outlines the early developments in IC technology from 1949 onwards. The document also discusses transistor scaling and how Moore's Law has allowed the semiconductor industry to achieve more complex ICs. Different IC circuit technologies such as BJT, CMOS, BiCMOS, SOI, and GaAs are briefly described. The scaling challenges at smaller technology nodes such as increased variability and static power are also mentioned.
The document discusses CMOS VLSI design technology and future trends. It provides an overview of CMOS technology and basic MOSFET operation. It then discusses how nanotechnology and integrated tri-gate transistors can help address limitations of CMOS scaling by reducing feature sizes and parasitic leakage. The document concludes that continued CMOS scaling will eventually be limited and alternatives like nanotechnology may be needed to retain device characteristics at smaller sizes.
The document discusses the Compact Linear Collider (CLIC) project. CLIC is a proposed linear collider that would collide electrons and positrons at very high energies up to 3 TeV. Its goal is to produce new heavy particles for study. The CLIC collaboration involves over 70 institutes from 29 countries. Current efforts include developing and testing key CLIC technologies like two-beam acceleration and nano-positioning, building test facilities like CTF3, and preparing for the next update to the European strategy for particle physics in 2018/19.
This document discusses MOSFET scaling and emerging nanoelectronic devices. It begins by outlining the objectives and introducing MOSFET scaling and its limits. It then describes techniques used for continued MOSFET scaling like strained silicon and high-k dielectrics. Emerging devices like FinFETs, organic field-effect transistors, and single electron transistors are also summarized. Fabrication processes for devices like TiOx single electron transistors using STM oxidation are briefly outlined.
The document provides an overview of microelectromechanical systems (MEMS) technology. It discusses key events in the development of MEMS such as Richard Feynman's 1959 talk on miniaturization and the invention of surface micromachining in the 1980s. The document then covers various MEMS fabrication techniques including lithography, deposition, etching, and bonding. It also describes different types of micromachining like bulk, surface, and high-aspect ratio micromachining. Finally, the challenges, applications, and future of MEMS are briefly discussed.
Microelectronics involves the study and manufacturing of very small electronic components on a single semiconductor substrate known as a chip. The key components are integrated circuits (ICs) which contain both active components like transistors and diodes, and passive components like resistors, capacitors, and inductors. There are several fabrication processes used to manufacture ICs, including deposition, photolithography, etching, and doping. ICs provide advantages over discrete components like reduced size, cost, and power consumption.
Microelectronics involves the study and manufacturing of very small electronic components on a single semiconductor substrate known as a chip. The key components are integrated circuits (ICs) which contain both active components like transistors and diodes, and passive components like resistors, capacitors, and inductors. There are several fabrication processes used to manufacture ICs, including deposition, photolithography, etching, and doping. ICs provide advantages over discrete components like reduced size, cost, and power consumption.
The document provides an overview of integrated circuit fabrication processes. It discusses the basic steps including wafer production, epitaxial growth, etching, masking, doping, diffusion, implantation, and metallization. It also describes the fabrication processes for MOSFETs including NMOS, PMOS and CMOS. BiCMOS fabrication is also summarized, which combines BJT and CMOS processes to achieve high speed and low power benefits.
M. Meyyappan provides an overview of recent developments in nanotechnology at NASA Ames Research Center. The center's research focuses on carbon nanotubes, molecular electronics, inorganic nanowires, and protein nanotubes. Applications being developed include nanoelectronics, sensors, gene sequencing using nanopores, and microscopy using carbon nanotube tips. Challenges include controlling material properties at the nanoscale and developing large-scale production methods.
Three-dimensional (3D) VLSI provides advantages over traditional two-dimensional (2D) VLSI by reducing chip size, power consumption, and signal delay through shorter, more direct interconnects between functional blocks stacked in three dimensions. While 3D VLSI faces challenges such as thermal management and difficulties in design and fabrication, its potential to continue increasing circuit density and transistor counts as predicted by Moore's Law makes it a promising long-term solution as 2D approaches its physical scaling limits.
This document discusses the use of carbon nanotubes in field emission displays. It begins with an introduction to carbon nanotubes, explaining their hexagonal structure and strong yet lightweight properties. It then discusses field emission displays and how they work using electron emission from microtips. The document proposes using carbon nanotubes as the electron emitters in field emission displays due to their high aspect ratio and ability to emit electrons at low voltages. The remainder of the document discusses the components and working principles of field emission displays, compares their attributes to other display technologies, and presents images of carbon nanotube field emission displays.
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The Steadfast and Reliable Bull: Taurus Zodiac Signmy Pandit
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6. 6
Patent Issued
1. A particle controller, comprising: an input port
configured to receive a particle stream; a
semiconductor cell comprising a cavity through which
at least a portion of the particles comprising the particle
stream is directed; and one or more electrodes
coupled to the cavity and configured to facilitate
creation of an electromagnetic field for directing the at
least portion of particles through the cavity; wherein the
cell is part of a set of semiconductor cells whose
cavities are aligned to form a tube through which the
at least portion of particles is directed
SAI confidential
8. 2D Single Chip Particle Accelerator
Cornell University
DARPA funded project 2011
Designed by MEMS Dept.
Single beam per chip
Energy of 30 Kev
Proves that an IC can accelerate a
particle beam at high energies.
Proves beam deflection~50 degrees
Demonstration of high acceleration
value
10. 10
Silicon Accelerator – how it works
Changing electric field
Accelerating region in IC
Drift tubes of equal
lengths
Frequency and phase
of each stage under
digital control of
I.C.’s
17. 17SAI confidential
Silicon Accelerator
Summary
Solid State Linear Particle Accelerator
Enabled by 3D SIC and TSV (through silicon via)
3D SIC per accelerating stage
Each 3D SIC contains
• Accelerating electrodes
• Drift tubes
• Electrostatic lens
• Digital and Timing controls
• Sensors
• Scanning electrodes
19. 19SAI confidential
Semi Manufacturing
In Crisis
Fab capital cost at 14 nanometers >$10 Billion
Next Generation Steppers (EUV) >$100M
Mask sets approaching $10M
FinFet transistors at 25 nm going to 10 nm
Wafer size increasing to 450mm
Consolidation of ~4 Major Fab Manufacturing at
14 nanometers
IC product volume threshold >millions of units
20. 20
Nanobeam Implanter
A Million Beams
Current Ion Implant NBI
Single Beam ~cm
Bream Array
Nanometer beams
Silicon Accelerator
SAI confidential
21. 21SAI confidential
Silicon Accelerators
Bandwidth
Massive Beam Array:
1 cm chip at 10 micron pitch ----1 Million beams
Electrostatic micron-sized lens ----Gigahertz scanning
Bandwidth is million beams times Gigahertz per beam
Embedded Digital processing & EDA database
Fully automated and robotic wafer handling
22. 22
Nanobeam Implanter
IC Doping Comparison
Current implant
Method
NBI
SAI confidential
Photo-lithography Digital-lithography
24. Maskless electron beam lithography has the potential to extend semiconductor
manufacturing to the sub-10 nm technology node. KLA-Tencor is currently developing
Reflective Electron Beam Lithography (REBL) for high-volume 10 nm logic (16 nm HP). This
paper reviews progress in the development of the REBL system towards its goal of 100 wph
throughput for High Volume Lithography (HVL) at the 2X and 1X nm nodes. In this paper we
introduce the Digital Pattern Generator (DPG) with integrated CMOS and MEMs lenslets that
was manufactured at TSMC and IMEC.
KLA
The lenslet consists of a densely packed array of 4µm
deep cylindrical holes with a 1.4 µm diameter and top
spacing of only 200nm. The electron beam entering the
lenslet holes is focused through a set of 4 ring electrodes.
The ring electrodes can be tuned to focus the
electron beams by applying static voltages up to 50V
on the ring electrodes. The bottom of each hole
consists of a small metal plate that can be switched by a
CMOS circuitry below, either reflecting or absorbing the
incoming electrons. In this way, the incoming electron
beam is split into 1 million smaller beamlets, a strategy
designed to enable higher throughput for the e-beam
writing process through parallelization.
Read more at: http://phys.org/news/2012-11-imec-
customized-lenslet-array-kla-tencor.html#jCp
25. 25SAI confidential
NBI
Market Opportunity
Worldwide Semiconductors market is >$300
Billion
Served by Equipment Market >$50 Billion
• Fab equipment: new and upgrades
• Back-end: Test and Assembly
Fab Segments impacted by NBI
Mask making
Photo-lithography: steppers
Resist: Track systems
Ion Implant
26. 26SAI confidential
NBI
Economic Potential
No Tooling cost: eliminates mask cost tooling
• Small production lots
• Low prototyping cost
• Customized even a few chip per wafer
Lower Fab Capital Cost
• Smaller Fabs economical: $millions versus
$billions
• Better clean room utilization: smaller footprint
• Lower Fab Inventory; less inventory risk
• Fewer Processing Steps: higher yields
27. 27SAI confidential
Performance Impact
Multiple processes simplified
• DRAM+Logic+Flash+Analog
Mixed Technologies Practical
• MEM's,LED,Laser,DLP
Improved Analog
• Wide materials selection for
– Resistors, super-capacitors
Transistor Structures
• different depth and doping across wafer
Advanced Technologies
• Graphene transistors, magnetoresistive RAM
28. 28SAI confidential
NBI
Summary
New Methodology of Semiconductor
Manufacturing
− Nanobeam Ion Implantation (NBI)
Million beam Silicon Accelerators
High bandwidth Digital Lithography
− Replaces Photo-lithography
Lower cost
Higher yields
High IC performance
31. 31
Fusion
Light elements—hydrogen—combine into helium
No radioactive by products—no meltdown possible
First discovered in 1930 using linear accelerator
Fission splits heavy elements---Uranium
---radioactive isotopes are by products
Research to develop Fusion Engine began in 1950
Fusion requires a hot dense compressed plasma
32. 32
Fusion
Light elements—hydrogen—combine into helium
No radioactive by products—no meltdown possible
First discovered in 1930 using linear accelerator
Fission splits heavy elements---Uranium
---radioactive isotopes are by products
Research to develop Fusion Engine began in 1950
Fusion requires a hot dense compressed plasma
33. 33SAI confidential
Fusion
Why fusion been so hard to achieve?
Plasmas expands:
• No physical container possible: extremely hot
• Reaction time ~ plasma density
Hot Plasma loses energy:
• The electrons radiate light when hot
• Fusion energy must exceed loses
How to compress plasma at >100 million degrees?
35. 35
National Ignition Facility
World's most powerful Laser system: 192 Laser beams
~2 million joules at 500 Terra-watts
Inertial Confinement Fusion
Millimeter diameter hydrogen fuel pellet
Idea is to heat and compress fuel with laser beams
Fuel failed to ignite due to:
Poor beam uniformity, jitter, coupling inefficiencies
NIF funding for fusion ignition dropped
40. 40SAI confidential
Nanofusion
Millions of beams focused into nanometer region
– Uniform compression of hot plasma
– Sub-picoseconds timing reduces beam jitter to nanometer
– Ion energy of 100K electron volts = 160 Million degrees
– Density of plasma is sum of beam densities
Fuel is hydrogen and boron
– Converted to fast moving ions of helium
– Energy of helium ions re-converted into electricity
Nanofusion is a portable power source
– About the size of basketball
41. 41
A few Other Apps
SAI confidential
Nano Technology Cancer Therapy Holography
Data Archive Quantum ComputingInstrumentation
42. 42
Member Role History
Alok Mohan Executive Leadership NCR-VP
SCO-CEO
Sam Brown Technology strategy NCR—Microelectronics
Alpine Semi-CEO
Tom Brummet Business Development NCR---Microelectronics
Silego Semi -VP
Marketing
Marcelo Martinex IC Design Principal
Advanced Analog Design
Jonathan Wurtele Technical Adviser Berkeley
Professor of Physics
Senior Scientist LNL
Ed Pheil Technical Adviser General Dynamics
Nuclear Engineer
John Bryant Technical Adviser Atmel: VP Marketing
43. 43
Next Steps
Printed Circuit Board
Identify Semiconductor Partner
Expand Team
Release Analog IC
Release Digital IC
Nanobeam prototype
Release Development Kit
SAI confidential
44. 44
Confidence Factors
1. Manufacturing: Very High-Processes are In Production
2. Competition: No Direct Competitor at this Time
• Strong-Broad Patents-Trade Secrets
3. Engineering: Digital IC~Block Diagram complete. Analog
IC: critical circuits simulated. Need to Identify Partner
4. Theory of Operation: Proven in 2D chip
5. Market Entry: Acceptance of Development Tool-Intel's
Microprocessor Model
6. First Revenues:
• Now Partnership R&D Licenses
• Development Systems 18 Months
Editor's Notes
Silicon Accelerators is the term for a new technology. It is also the name of the corporation. This presentation a conceptual view of technology, but we will touch on the business side. The Silicon Accelerator is a new invention, the patent was issued in 2011. Since that time, research has focused on engineering development and applications. The first prototypes are under development. A Silicon Accelerator controls charged particles. Charged particles include electrons, protons, sub- atomic particles, ions, and electrically charged molecules.
The presentation aims to provide answers to basic questions. The underlying science includes plasma physics, IC processes, electric field analysis, and classical mechanic Specific applications requires nuclear physics and quantum mechanics.
The popular image of particle accelerators is that of large scientific accelerators. The Large Hadron Collider is the world's most powerful synchrotron, made famous by the discovery of the Higgs particle. It is the most powerful accelerator in the world, hurling protons to 3.5 Teravolts. The particles build gain energy as they circle through the track. Powerful super-cooled magnet hold the particles within the track. The Stanford Linear Accelerator is the world's longest-- familiar to commuters passing over on the 280 freeway. The SLA accelerates electrons to Gigavolts along what has been called the world's straightest line. All particle accelerators are either a linear accelerator or a synchrotron. There are approximately 10,000 accelerators installed worldwide. The three major segments using accelerators are scientific, medical, and manufacturing. For the most part, the accelerators are customized and manufactured one at a time. The underlying technology of the installed accelerators is primarily vacuum tube amplifiers, discrete semiconductor components, and electromagnets. A relatively small commercial particle accelerator is the about the size of a refrigerator.
A silicon accelerator is a miniaturization of linear accelerators based on an advanced integrated circuit technology called 3D stacked IC. The 3D SIC process is based on making electrical connections from the front to the back of the chip using micron diameter holes. Through Silicon Via (TSV) VIA processing is recently entered volume production and is available from several of the major foundries, including TSMC and IBM. For a pitch of 10 microns, a centimeter chip can have a 1 million TSV. The area surrounding the TSV contain the transistors circuits of the Integrated Circuit. The full range of IC can be integrated: microprocessors, memories, logic, analog, etc. Ina Silicon Accelerator, the TSV, left open, form the pipes to contain charged particles. The charged particles can controlled and manipulated electric fields present in the metal layers of a proprietary Analog IC design.
Just advances in IC density enabled putting a computer on a chip---the Microprocessor, 3D SIC enabled the invention of the Silicon Accelerator. It takes it place as a fundamental invention, improving with time, aka “Moore's Law”, continuing to find new applications, and creating new market opportunities.
The invention is covered by broad patent coverage. There are 20 claims. As the first claim states, the patent covers any IC based particle accelerator.
We now present an overview of the internal operation of the silicon accelerator.
The breakthrough was in orienting the path of the particles perpendicular to the surface of the IC. IC are limited to in size by yield to a few square centimeters. Previous attempts to build IC based particle accelerators were severely constrained by IC size and processing. The novel architecture leads to precise control of matter at the nanometer range.
Electrically charged particles, enter the accelerator from left. Electric fields are switched on between electrodes when the particles are present. As the particles transverse the gap, they experience a force proportional the voltage between the electrodes. Rather than increase the lengths to compensate for the increased particle speed, digital logic adjust the timing of the fields. Variable timing allows the same 3D SIC to be used in all stages. Digital controls also accommodates particles of differing mass and charge.
In a 3D IC, Through Silicon Via (TSV) are holes which are etched from the front to the back side of a silicon chips. When the chips are stacked, the holes in the chips are aligned. The aligned holes become the pipes through which the particles can pass. Some of the TSV can be filled with conducting material to create electrical connections. The design can be optimized by combining digital processes and analog processes.
The accelerating electrodes are formed using the metal layers of the active layers. The electrodes are connected to high voltage transistors. The diameter of the pipes are 5 microns on a pitch of 10 microns. This image is not to scale as an actual IC contains 1 million pipes.
The beams are focused using electrostatic lens. The electrostatic lens are formed similar to the electrodes. This image is from a software simulator, Simon. Simon uses the Laplace equations to solve the electric field equations to high accuracy. The voltages on the lens elements can be adjusted under program control to accommodate a wide variety of particle types.
Each 3D SIC corresponds to a single accelerating stage. The slide shows two accelerating gaps separated by the drift tube. An electrostatic lens is positioned inside the drift tube.
Many stages can be concatenated to increase the power of the accelerator.
Its now projected that for the first time, the cost on a transistor basis may increase. The high development of advanced ICs limits innovation. Process complexity lengths production cycle time.
Placing a silicon accelerator in the beam of an ion implanter splits the single beam into a million separate beams.
A million beams provides the data bandwidth for a wafer throughput of 120 wafers an hour, competitive with the productivity of steppers
Openings in photo resist allow ions to penetrate the wafer. NBI directly implants transistor features without the need for photo-lithography.
Digital Lithography compared to photo-lithography is as film photography to digital photography. The nano sized beans from the silicon accelerator are modulated under the control of embedded digital processors.
The conversion to NBI maintains Moore's Law and innovation with low-cost new IC designs.
ICs made with NBI have greater performance, more features, lower cost.
In the core of stars, gravity give rise to extremely high density and temperatures necessary for fusion. Fusion converts matter to energy: E=MC 2 /
The National Ignition Facility is a $4 billion facility located in Livermore, Ca. The facility has been funded through the Department of Energy. The justification for the facility included research tied to the maintenance of the strategic stockpile.
The incoming plasma from the millions of particle beams create a plasma sphere collapsing into the target region. The collapsing plasma contains the hot plasma core region of a few hundred of nanometers.
The boron eleven contains 5 protons and 6 neutrons in its nucleus. The positive charge between the protons creates the repulsive Coulomb force. The kinetic energy of the fast moving particles can bring the proton within range of the attractive force of the nucleus, the Strong Force. The proton is captured by the nucleus. The addition of the proton is unstable and splits into three helium nucleus