- The document discusses mobility in bulk semiconductors and at surfaces/interfaces. It provides formulas and models for mobility as a function of temperature, doping concentration, and electric fields.
- Mobility is affected by scattering from phonons, impurities, carriers, and other mechanisms. Different scattering mechanisms dominate at different temperatures and doping levels.
- At surfaces or interfaces like inversion layers, additional scattering occurs from surface states, surface phonons, and surface roughness that depends on perpendicular electric fields.
- Effective mobility models incorporate variations with temperature, doping, and electric fields to describe mobility in both bulk and inversion layer conditions.
Concepts and Problems in Quantum Mechanics, Lecture-II By Manmohan DashManmohan Dash
9 problems (part-I and II) and in depth the ideas of Quantum; such as Schrodinger Equation, Philosophy of Quantum reality and Statistical interpretation, Probability Distribution, Basic Operators, Uncertainty Principle.
The Physics of electromagnetic waves, a discourse to engineering 1st years.
"Lets discover what electromagnetic phenomena are entailed by the Maxwell’s equations.
Electromagnetic Waves are a set of phenomena broadly categorized as “Gamma rays, X-rays, Ultraviolet Rays, Visible light, Infra-red Rays, Microwaves and Radio waves.
We will discuss them from the perspective of Maxwell’s equations."
Concepts and Problems in Quantum Mechanics, Lecture-II By Manmohan DashManmohan Dash
9 problems (part-I and II) and in depth the ideas of Quantum; such as Schrodinger Equation, Philosophy of Quantum reality and Statistical interpretation, Probability Distribution, Basic Operators, Uncertainty Principle.
The Physics of electromagnetic waves, a discourse to engineering 1st years.
"Lets discover what electromagnetic phenomena are entailed by the Maxwell’s equations.
Electromagnetic Waves are a set of phenomena broadly categorized as “Gamma rays, X-rays, Ultraviolet Rays, Visible light, Infra-red Rays, Microwaves and Radio waves.
We will discuss them from the perspective of Maxwell’s equations."
Study on the dependency of steady state response on the ratio of larmor and r...eSAT Journals
Abstract In this project we simulate with very high accuracy specially to study the dependency of the steady state power and dispersion output on the ratio (r) between Larmor and Rabi frequency for the electron spin resonance experiment by the matlab software (version 7.9.0.529(R2009b)). Where the sample material (DPPH) has been kept in a strong static magnetic field (B0) and in orthogonal direction a high frequency electromagnetic field (B1(t)) has been applied. We divide our simulation into two parts. In the first part we ignore the terms and observe the dependency of the power maximum on the amplitude of the oscillating e.m. field B1 (for fixed (ωL) Larmor frequency) and on ωL (for fixed B1). Also observe a clear shift (Δω) of the power maxima (Pmax) from ωL. In our second part we consider the term and the ratio (r) between Larmor and Rabi frequency and observe the shift (Δω) of the power maxima (Pmax) from ωL and change in peak to peak line width (ΔBPP) with B1 both depends upon the ratio r. we consider various range of r ([0.83,5], [16,100], [88.3,500], [1000,2000], [833.3,5000]) and observe these dependency. We observe as the ratio of r increases the output i.e. shift (Δω) and the change in ΔBPP with B1 decreases and converges to the case of neglecting terms. We also observe the shift (Δω) follows some non linear relationship with B1. Keywords: E.S.R., Larmor, Rabi, Ratio r, Spin
Physics dictionary for CBSE, ISCE, Class X Students by Arun Umraossuserd6b1fd
Dictionaries are very important. Without definitions of scientific words you can not understand the theories or theorems. This dictionary explains nearly all the terms used in CBSE Class X science book.
[Electricity and Magnetism] ElectrodynamicsManmohan Dash
We discussed extensively the electromagnetism course for an engineering 1st year class. This is also useful for ‘hons’ and ‘pass’ Physics students.
This was a course I delivered to engineering first years, around 9th November 2009. I added all the diagrams and many explanations only now; 21-23 Aug 2015.
Next; Lectures on ‘electromagnetic waves’ and ‘Oscillations and Waves’. You can write me at g6pontiac@gmail.com or visit my website at http://mdashf.org
It covers all the Maxwell's Equation for Point form(differential form) and integral form. It also covers Gauss Law for Electric Field, Gauss law for magnetic field, Faraday's Law and Ampere Maxwell law. It also covers the reason why Gauss Laws are also known as Maxwell's Equation.
Time Independent Perturbation Theory, 1st order correction, 2nd order correctionJames Salveo Olarve
The presentation is about how to solve the new energy levels and wave functions when the simple Hamiltonian is added by another term due to external effect (can be due to external field) .
The intended reader of this presentation were physics students. The author already assumed that the reader knows dirac braket notation.
Study on the dependency of steady state response on the ratio of larmor and r...eSAT Journals
Abstract In this project we simulate with very high accuracy specially to study the dependency of the steady state power and dispersion output on the ratio (r) between Larmor and Rabi frequency for the electron spin resonance experiment by the matlab software (version 7.9.0.529(R2009b)). Where the sample material (DPPH) has been kept in a strong static magnetic field (B0) and in orthogonal direction a high frequency electromagnetic field (B1(t)) has been applied. We divide our simulation into two parts. In the first part we ignore the terms and observe the dependency of the power maximum on the amplitude of the oscillating e.m. field B1 (for fixed (ωL) Larmor frequency) and on ωL (for fixed B1). Also observe a clear shift (Δω) of the power maxima (Pmax) from ωL. In our second part we consider the term and the ratio (r) between Larmor and Rabi frequency and observe the shift (Δω) of the power maxima (Pmax) from ωL and change in peak to peak line width (ΔBPP) with B1 both depends upon the ratio r. we consider various range of r ([0.83,5], [16,100], [88.3,500], [1000,2000], [833.3,5000]) and observe these dependency. We observe as the ratio of r increases the output i.e. shift (Δω) and the change in ΔBPP with B1 decreases and converges to the case of neglecting terms. We also observe the shift (Δω) follows some non linear relationship with B1. Keywords: E.S.R., Larmor, Rabi, Ratio r, Spin
Physics dictionary for CBSE, ISCE, Class X Students by Arun Umraossuserd6b1fd
Dictionaries are very important. Without definitions of scientific words you can not understand the theories or theorems. This dictionary explains nearly all the terms used in CBSE Class X science book.
[Electricity and Magnetism] ElectrodynamicsManmohan Dash
We discussed extensively the electromagnetism course for an engineering 1st year class. This is also useful for ‘hons’ and ‘pass’ Physics students.
This was a course I delivered to engineering first years, around 9th November 2009. I added all the diagrams and many explanations only now; 21-23 Aug 2015.
Next; Lectures on ‘electromagnetic waves’ and ‘Oscillations and Waves’. You can write me at g6pontiac@gmail.com or visit my website at http://mdashf.org
It covers all the Maxwell's Equation for Point form(differential form) and integral form. It also covers Gauss Law for Electric Field, Gauss law for magnetic field, Faraday's Law and Ampere Maxwell law. It also covers the reason why Gauss Laws are also known as Maxwell's Equation.
Time Independent Perturbation Theory, 1st order correction, 2nd order correctionJames Salveo Olarve
The presentation is about how to solve the new energy levels and wave functions when the simple Hamiltonian is added by another term due to external effect (can be due to external field) .
The intended reader of this presentation were physics students. The author already assumed that the reader knows dirac braket notation.
38
RING GAUGES
Ring gauges are mainly used for checking the diameter of shafts having a central hole. The hole is accurately finished by grinding and lapping after taking hardening process.
The periphery of the ring is knurled to give more grips while handling the gauges. We have to make two ring gauges separately to check the shaft such as GO ring gauge and NOGO ring gauge.
But the hole of GO ring gauge is made to the upper limit size of the shaft and NOGO for the lower limit.
While checking the shaft, the GO ring gauge will pass through the shaft and NOGO will not pass.
To identify the NOGO ring gauges easily, a red mark or a small groove cut on its periphery.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
CFD Simulation of By-pass Flow in a HRSG module by R&R Consult.pptxR&R Consult
CFD analysis is incredibly effective at solving mysteries and improving the performance of complex systems!
Here's a great example: At a large natural gas-fired power plant, where they use waste heat to generate steam and energy, they were puzzled that their boiler wasn't producing as much steam as expected.
R&R and Tetra Engineering Group Inc. were asked to solve the issue with reduced steam production.
An inspection had shown that a significant amount of hot flue gas was bypassing the boiler tubes, where the heat was supposed to be transferred.
R&R Consult conducted a CFD analysis, which revealed that 6.3% of the flue gas was bypassing the boiler tubes without transferring heat. The analysis also showed that the flue gas was instead being directed along the sides of the boiler and between the modules that were supposed to capture the heat. This was the cause of the reduced performance.
Based on our results, Tetra Engineering installed covering plates to reduce the bypass flow. This improved the boiler's performance and increased electricity production.
It is always satisfying when we can help solve complex challenges like this. Do your systems also need a check-up or optimization? Give us a call!
Work done in cooperation with James Malloy and David Moelling from Tetra Engineering.
More examples of our work https://www.r-r-consult.dk/en/cases-en/
Democratizing Fuzzing at Scale by Abhishek Aryaabh.arya
Presented at NUS: Fuzzing and Software Security Summer School 2024
This keynote talks about the democratization of fuzzing at scale, highlighting the collaboration between open source communities, academia, and industry to advance the field of fuzzing. It delves into the history of fuzzing, the development of scalable fuzzing platforms, and the empowerment of community-driven research. The talk will further discuss recent advancements leveraging AI/ML and offer insights into the future evolution of the fuzzing landscape.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Water scarcity is the lack of fresh water resources to meet the standard water demand. There are two type of water scarcity. One is physical. The other is economic water scarcity.
TECHNICAL TRAINING MANUAL GENERAL FAMILIARIZATION COURSEDuvanRamosGarzon1
AIRCRAFT GENERAL
The Single Aisle is the most advanced family aircraft in service today, with fly-by-wire flight controls.
The A318, A319, A320 and A321 are twin-engine subsonic medium range aircraft.
The family offers a choice of engines
Event Management System Vb Net Project Report.pdfKamal Acharya
In present era, the scopes of information technology growing with a very fast .We do not see any are untouched from this industry. The scope of information technology has become wider includes: Business and industry. Household Business, Communication, Education, Entertainment, Science, Medicine, Engineering, Distance Learning, Weather Forecasting. Carrier Searching and so on.
My project named “Event Management System” is software that store and maintained all events coordinated in college. It also helpful to print related reports. My project will help to record the events coordinated by faculties with their Name, Event subject, date & details in an efficient & effective ways.
In my system we have to make a system by which a user can record all events coordinated by a particular faculty. In our proposed system some more featured are added which differs it from the existing system such as security.
Quality defects in TMT Bars, Possible causes and Potential Solutions.PrashantGoswami42
Maintaining high-quality standards in the production of TMT bars is crucial for ensuring structural integrity in construction. Addressing common defects through careful monitoring, standardized processes, and advanced technology can significantly improve the quality of TMT bars. Continuous training and adherence to quality control measures will also play a pivotal role in minimizing these defects.
Overview of the fundamental roles in Hydropower generation and the components involved in wider Electrical Engineering.
This paper presents the design and construction of hydroelectric dams from the hydrologist’s survey of the valley before construction, all aspects and involved disciplines, fluid dynamics, structural engineering, generation and mains frequency regulation to the very transmission of power through the network in the United Kingdom.
Author: Robbie Edward Sayers
Collaborators and co editors: Charlie Sims and Connor Healey.
(C) 2024 Robbie E. Sayers
Cosmetic shop management system project report.pdfKamal Acharya
Buying new cosmetic products is difficult. It can even be scary for those who have sensitive skin and are prone to skin trouble. The information needed to alleviate this problem is on the back of each product, but it's thought to interpret those ingredient lists unless you have a background in chemistry.
Instead of buying and hoping for the best, we can use data science to help us predict which products may be good fits for us. It includes various function programs to do the above mentioned tasks.
Data file handling has been effectively used in the program.
The automated cosmetic shop management system should deal with the automation of general workflow and administration process of the shop. The main processes of the system focus on customer's request where the system is able to search the most appropriate products and deliver it to the customers. It should help the employees to quickly identify the list of cosmetic product that have reached the minimum quantity and also keep a track of expired date for each cosmetic product. It should help the employees to find the rack number in which the product is placed.It is also Faster and more efficient way.
Cosmetic shop management system project report.pdf
Drift diffusion
1.
2. • We derive the current voltage characteristic of the device by integrating the
current density J which is the sum of the electron current and hole current
over the contact area. And the voltage corresponding to this current is
obtained by integrating the electric field over the length between the
contacts. We have explained that in most cases, the excess carrier
concentration of electrons and holes would be approximately equal.
3. Mobility in Bulk and Inversion Layer
• The Bulk is somewhere inside here okay far
away from the boundaries semiconductor.
Now, we will be encountering 2 electric
fields one is parallel to the current flow so
the arrow shows the direction of current low
and the electric field that is causing this
flow, so the electric field which is along
direction of the current we shall denote it as
E parallel.
• On the other hand, when we move to the
surface we will find that there will be an
electric field which is perpendicular to the
current flow. Let us look at the surface. Now
what are the occasions when you have
current flow at the surface? So here is an
example of a mass wet in 2 conditions,
accumulation and inversion. So in both
these instances you have large concentration
of mobile carriers at the surface shown here
by this green region.
4. * Now one more thing that we need to take into account when we are talking about an inversion layer is the
presence of the depletion layer beneath. So these are the conditions in the bulk and at the surface. So for
the surface we will concentrate on the inversion layer mobility in the inversion layer because most of the
mass fit operation is actually involving this inversion layer. Though whatever we discussed can be
extended to accumulation layer also.
* Let us concentrate on the Bulk. Here is the drift velocity versus electric field characteristic that we have
derived in our earlier module. This electric field now is the E parallel which is along the direction of the
current. We have put a modulus over the drift velocity because if you are considering electron the drift
velocity in the direction opposite to that of the electric field and so its sign is negative.
5. * Let us concentrate on the mobility in the bulk and let us see what kind of a model we have for
mobility as a function of the total impurity concentration and the latest temperature. The formula for
mobility we are rewriting here from our earlier module, the low field mobility Mu0 = times the
moment relaxation time close to equilibrium divided by the effective mass. Now we have said that
we use the symbol m* when we want to generally refer to electrons and holes.
* If you are talking about electrons specifically, we will replace m*/m suffix n and if it is holes it is m
suffix p. The scattering mechanisms which affect this mobility are Lattice or Phonon scattering, the
Impurity scattering and Carrier-carrier scattering, we appointed this out earlier.
* Now quantum mechanism gives us the relation between the moment relaxation time for Lattice
scattering.
* And the Lattice temperature so this relation is obtained as Tau m suffix Tau suffix M0L is
propositional to TL power -3/2. Now since your mobility is proportional to Tau M0 therefore the
mobility is also proportional to TL power -3/2, so it decreases as TL power -3/2 for Lattice or
Phonon scattering. Now that is what is depicted here in the graph. Now since the relation between
Mu0 and TL is a power law.
6. * And the Ionized Impurity scattering you get a mobility versus temperature behaviour as shown here, so
for very low temperature the mobility increases reach a pick and then falls off. So normally when you are
operating around room temperature you would be somewhere here were the mobility falls with
temperature because the Phonon scattering or Lattice scattering would dominant.
* Now just want to remark that 2 and 3 that is Carrier-carrier scattering and Impurity scattering are both
referred to as Coulomb’s scattering because in both of these cases the reason for the change in direction
of the carrier motion is the Coulomb forces of attraction or repletion between the entity that is scattering
and the carrier.
* Now let us separate the behaviour of mobility into 2 regions of operation namely the Low injection level
and High injection level and look at these 2 conditions separately. So when device
* currents small normally injection levels will be low and when device currents are large injections level
could be high. Okay. Now from your first level course you know what injection level means.
7. * Now let us look at the formulae for majority carrier mobility at 300K. We will look at silicon first. Now
by this time it must be clear to you that if you are asked a question such as what is the mobility of carriers
in silicon. You know that you will ask a few questions before giving an answer. So you would ask back,
“Well, are you talking about majority carrier mobility or minority carrier mobility.
* Point number one. Point number 2, you would ask “Are you talking about high injection level or low
injection level, are you talking about bulk or are you talking about surface. Right? And only when you
know all this conditions then you can talk about what is the mobility. You would also ask what is a doping
level right? So please remember that the mobility which is such an important parameter depends on so
many conditions the simply.
* Because the electron moment in the response to the electric field is affected by so many things present
around the electron or a hole, so these facts must be borne in mind. Now generally, it is easier to measure
majority carrier mobility then minority carrier mobility. Because, you know that if you take the expression
for resistivity the resistivity of a semiconductor which is an easily measurable quantity depends on
majority carrier concentration.
8. * The effect of minority carrier concentration on resistivity small therefore in general it is difficult to
measure minority carrier mobility’s. So unless stated otherwise if people are giving you values of
mobility they are most likely giving you values of majority carrier mobility. Now let us look at the
behaviour of mobility as a function of temperature according to the formulae.
* If you plot mobility as a function of doping were the doping is sketched on the lock scale because you
know the doping level varies from 10 power 14 per centimetre cube-- I am talking about the
approximate range 10 power 14 per centimetre cube to as high as may be 10 power 19 or 20 per
centimetre cube, right. It can even go beyond in some cases. So this is a very wide range evidently
you cannot show the behaviour on such a wide range on a linear plot, therefore we have to choose a
log scale for the total doping.
* On the other hand, in this graph the mobility is shown on a linear plot, a linear scale. So this is
important to recognize because when we remember the shape of a curve we should remember it along
with the information about the access whether it is a log or semi-log graph or Linear-linear graph. So
this is semi-log plot. Now when you look at the shape from the shape you can get some ideas about
the expression that would fit the shape.
* Now that expression is shown here, in which the numerator Mu suffix L is Lattice scattering.
Evidently, this total impurity concentration here is the affect of ionized impurity scattering. Now let
us see how this kind of a formula can result from the shape, okay.
9. * Now, you can separate this into 2 regions, say maybe one region which goes like this and other
region which is kind of constant right as a function of doping. Now it proves convenient to
develop equations for mobility using the reciprocal. So for example, I can write 1/Mu0 = 1/Mu L
that is due to Lattice scattering and +1/Mu I due to ionized impurity scattering. Why?
* Because I can write in terms of the moment relaxation time 1/Tau M0 = 1/Tau M0L+1/Tau M0I.
This is the moment relaxation time because of Lattice scattering and this is moment relaxation
time because of ionized impurity scattering. Now why can I sum up the reciprocals, well it is very
simple 1/reciprocal of this time represents the number of scattering events or scattering rate.
* Now intuitively, it is very easy for you to recognize that if I have one mechanism of scattering I
get a certain scattering rate then if I add another scattering mechanism the scattering rate of this
mechanism would add on to the scattering rate that was already there. Now you can ask but how
can you just superpose to scattering mechanism and the rates. Yes, strictly speaking it may or may
not hold in practice. Okay.
10. Low Field Mobility in Bulk:
* Now let us look at an improve relation. Now, you see what is found is that for large NT
this relation predicts the mobility going towards 0. Okay. Whereas it is found in practise
that it would be more appropriate to have a non-zero saturating value because than the
curve-- when the expression fits the curve better and that is why people are proposed an
improved relation where you add a small mobility term here which is a saturation value
for large NT.
11. * Now the values in these formulae are given here. One advantage of this formula as we will see is that it
can be used for majority carrier mobility, minority carrier mobility and for silicon, Gallium Arsenide
and so on. Right, that is the advantage of this form of the equation. And also it can incorporate
temperature dependence. So each of this terms Mu1, Mu2 written here you see the temperature
dependent.
* So this incorporates both the impurity dependence, impurity concentration dependence as well as
temperature dependence of mobility. In case you are taking down this values I will give you some
time, I leave the slide on for some time. Now I will-- let me just mention the significant of the N
critical okay. So what is the significant of N critical, you see when NT = N critical the mobility is
approximately half of the maximum value, right.
* If you leave out this-- this Mu1 which is small quantity you can see here say, Mu1 at room temperature
is about 88 for electrons in silicon and Mu2 is 1250, right so this really a small value. The value to
which the mobility saturates here. So approximately for NT = N critical your mobility falls to half of
the maximum value. Okay. So your N critical therefore, on this graph if you see this would correspond
to a point your mobility would be half of the maximum.
12. Effective Mobility In Inversion Layer
* Now let us look at the effective mobility in inversion layers. The scattering mechanisms affecting this
mobility. So we are following the same approach that we did for mobility. We shall consider the various
aspects in the same order. Now the scattering at the surface includes the mechanisms which take place
in the bulk also. Therefore, let us separate the mechanism affecting Mu affecting into 2 parts namely the
bulk mechanisms and surface mechanisms.
* So the impurity scattering and the Phonon scattering in bulk that affect the surface also, the carriers at
the surface also. You have analogues extra scattering mechanisms at the surface. For example,
analogues to the impurity scattering you have the surface state because of surface charges so these
charges are indicated here. So they scatter the carriers in this surface mobile carrier layer just in the
same way as you have scattering because of ionized impurities.
* Similarly, the Phonon scattering in the bulk as an Analog surface and that is called the surface Phonon
scattering. In additional, you have a mechanism called Surface roughness scattering which is related to
the roughness of this surface. Let us show these things with the diagram.
* Now evidently, all the surface mechanisms would depend on the perpendicular electric field. Why?
Because, this field would tend to accelerate the carriers toward the surface and if the carriers are moving
away they cannot move away to that distance because here again the carriers will be pulled back toward
the surface. So because the perpendicular electric field tends to move the carriers toward the surface
accelerates the carriers toward the surface the presence of the perpendicular electric field has an effect
on each of the scattering mechanisms.