Diode and Rectifier.ppt
•Download as PPT, PDF•
0 likes•24 views
The document summarizes the basics of a p-n junction diode. When a p-type and n-type semiconductor are joined, a depletion layer forms at the junction due to the diffusion of charge carriers. This layer acts as an insulator containing no free charges. When forward biased, the depletion layer narrows allowing current to flow. When reverse biased, the layer widens blocking current. Diodes can be used as rectifiers, switches, detectors and in LEDs.
Report
Share
Report
Share
Recommended
P-N Junction Ppt.pptx
This document summarizes the key aspects of a P-N junction diode. It describes that a P-N junction is formed at the boundary between P-type and N-type semiconductors. When the two materials come together, electrons from the N-type side diffuse to the P-type side, leaving positive ions on one side and negative ions on the other, forming a depletion layer. This layer acts as an insulator. The document then explains forward and reverse biasing of the diode and its use for rectification of alternating current to direct current due to its asymmetric conduction. It concludes by listing some common applications of P-N junction diodes.
pn-junctiondiodeJJNINIIJOIOOIMOMOKMOMOIM
A PN junction is formed by joining a P-type semiconductor with an N-type semiconductor. When joined, majority charge carriers diffuse across the junction, creating a depletion layer empty of mobile charges. This layer acts as an insulator. When forward biased, the depletion layer narrows, allowing current to flow. When reverse biased, the layer widens, blocking nearly all current flow. The I-V characteristic of a PN junction diode shows it acts as a rectifier, allowing current in only one direction. Diodes have applications in rectification, switching, and light emission.
Pn junction diode
A PN junction is formed by joining a P-type semiconductor with an N-type semiconductor. When joined, a depletion layer forms at the junction that acts as an insulator. When forward biased, current flows easily through the junction. When reverse biased, very little current flows due to the high resistance of the depletion layer acting as a barrier. PN junction diodes are used as rectifiers, switches, detectors, and light emitting diodes (LEDs) in electronic circuits.
Semi conductor diode
LEDs (light-emitting diodes) are semiconductor devices that emit light when activated. They work by passing electricity through two opposing materials (p-type and n-type semiconductor), causing electrons to recombine with electron holes and release energy in the form of photons. Common applications of LEDs include indicator lights, displays, traffic lights and signs, lighting (replacing incandescent bulbs), and backlighting for LCDs.
Minor project report on pn junction, zener diode, led characteristics
This document provides an overview of PN junction diodes, including their construction, operating principles, and I-V characteristics under forward and reverse bias conditions. In forward bias, the depletion region narrows allowing electrons and holes to flow across the junction, resulting in a lower resistance path. In reverse bias, the depletion region widens inhibiting flow and resulting in a very small saturation current until breakdown. The document explains the diffusion, drift, and recombination processes that occur under equilibrium and biasing conditions.
P n junction--eema
The document discusses P-N junctions, which are formed at the interface between P-type and N-type semiconductors. When these materials come into contact, majority charge carriers diffuse across the junction, leaving behind charged dopant ions. This creates an electric field and depletion region across the junction. At equilibrium with no applied voltage, a built-in potential barrier forms that prevents further carrier recombination. P-N junctions can be forward or reverse biased by an external voltage, affecting the electric field and current flow. They are the basic components of many semiconductor devices such as diodes, transistors, and solar cells.
1.0 construction principle of operation-types and characteristics-pn junction...
A P-N junction forms when a P-type semiconductor is placed in contact with an N-type semiconductor. Electrons diffuse from the N-type side into the P-type side, leaving ionized donor atoms on the N-side and accepting holes on the P-side. This creates an electric field across the depletion region that prevents further diffusion. No current flows under thermal equilibrium with zero bias. A P-N junction can be forward or reverse biased by applying a voltage, which affects the barrier and current flow. P-N junctions are the basic components of many semiconductor devices like diodes, transistors, and solar cells.
Recommended
P-N Junction Ppt.pptx
This document summarizes the key aspects of a P-N junction diode. It describes that a P-N junction is formed at the boundary between P-type and N-type semiconductors. When the two materials come together, electrons from the N-type side diffuse to the P-type side, leaving positive ions on one side and negative ions on the other, forming a depletion layer. This layer acts as an insulator. The document then explains forward and reverse biasing of the diode and its use for rectification of alternating current to direct current due to its asymmetric conduction. It concludes by listing some common applications of P-N junction diodes.
pn-junctiondiodeJJNINIIJOIOOIMOMOKMOMOIM
A PN junction is formed by joining a P-type semiconductor with an N-type semiconductor. When joined, majority charge carriers diffuse across the junction, creating a depletion layer empty of mobile charges. This layer acts as an insulator. When forward biased, the depletion layer narrows, allowing current to flow. When reverse biased, the layer widens, blocking nearly all current flow. The I-V characteristic of a PN junction diode shows it acts as a rectifier, allowing current in only one direction. Diodes have applications in rectification, switching, and light emission.
Pn junction diode
A PN junction is formed by joining a P-type semiconductor with an N-type semiconductor. When joined, a depletion layer forms at the junction that acts as an insulator. When forward biased, current flows easily through the junction. When reverse biased, very little current flows due to the high resistance of the depletion layer acting as a barrier. PN junction diodes are used as rectifiers, switches, detectors, and light emitting diodes (LEDs) in electronic circuits.
Semi conductor diode
LEDs (light-emitting diodes) are semiconductor devices that emit light when activated. They work by passing electricity through two opposing materials (p-type and n-type semiconductor), causing electrons to recombine with electron holes and release energy in the form of photons. Common applications of LEDs include indicator lights, displays, traffic lights and signs, lighting (replacing incandescent bulbs), and backlighting for LCDs.
Minor project report on pn junction, zener diode, led characteristics
This document provides an overview of PN junction diodes, including their construction, operating principles, and I-V characteristics under forward and reverse bias conditions. In forward bias, the depletion region narrows allowing electrons and holes to flow across the junction, resulting in a lower resistance path. In reverse bias, the depletion region widens inhibiting flow and resulting in a very small saturation current until breakdown. The document explains the diffusion, drift, and recombination processes that occur under equilibrium and biasing conditions.
P n junction--eema
The document discusses P-N junctions, which are formed at the interface between P-type and N-type semiconductors. When these materials come into contact, majority charge carriers diffuse across the junction, leaving behind charged dopant ions. This creates an electric field and depletion region across the junction. At equilibrium with no applied voltage, a built-in potential barrier forms that prevents further carrier recombination. P-N junctions can be forward or reverse biased by an external voltage, affecting the electric field and current flow. They are the basic components of many semiconductor devices such as diodes, transistors, and solar cells.
1.0 construction principle of operation-types and characteristics-pn junction...
A P-N junction forms when a P-type semiconductor is placed in contact with an N-type semiconductor. Electrons diffuse from the N-type side into the P-type side, leaving ionized donor atoms on the N-side and accepting holes on the P-side. This creates an electric field across the depletion region that prevents further diffusion. No current flows under thermal equilibrium with zero bias. A P-N junction can be forward or reverse biased by applying a voltage, which affects the barrier and current flow. P-N junctions are the basic components of many semiconductor devices like diodes, transistors, and solar cells.
PN Junction 2.pptx
When a p-type and n-type semiconductor are joined, electrons flow from the n-side to the p-side, leaving positive ions in the n-side and negative ions in the p-side. This forms an electric field called a depletion region that acts as a barrier. When a voltage is applied in the forward direction, it reduces the depletion region, allowing electrons and holes to flow more easily across the junction. This forms the basis of a p-n junction diode, which allows current to flow easily in one direction but blocks it in the other.
PN Junction 1.pptx
When a p-type and n-type semiconductor are joined, electrons flow from the n-side to the p-side, leaving positive ions in the n-side and negative ions in the p-side. This forms an electric field called a depletion region that acts as a barrier. When a voltage is applied in the forward direction, it reduces the depletion region, allowing electrons and holes to flow more easily across the junction. This forms the basis of a p-n junction diode, which allows current to flow easily in one direction but blocks it in the other.
PN Junction 2.pptx
When a p-type and n-type semiconductor are joined, electrons flow from the n-side to the p-side, leaving positive ions in the n-side and negative ions in the p-side. This forms an electric field called a depletion region that acts as a barrier. When a voltage is applied in the forward direction, it reduces the depletion region, allowing electrons and holes to flow more easily across the junction. This forms the basis of a p-n junction diode, which allows current to flow easily in one direction but blocks it in the other.
Diode.ppt
The document discusses diodes and p-n junctions. It begins with an introduction and outline then covers:
- Formation of p-n junctions through doping of n-type and p-type semiconductors.
- Energy band diagrams which show band structure changes at junction.
- Concepts of built-in potential and how diffusion generates an electric field and potential barrier.
- Forward and reverse bias modes, and how applied voltage affects carrier concentrations and barrier.
- Derivation of the diode I-V characteristic equation from diffusion equations.
- Linear piecewise models approximate the diode as a battery and resistor in series.
- Breakdown diodes operate
Class 12 th semiconductor part 3
This document discusses the formation and operation of p-n junction diodes. It describes three common methods for forming a p-n junction: alloying, diffusion, and vapor deposition. It explains key concepts such as the depletion region, barrier potential, drift and diffusion currents, and forward and reverse biasing. Forward biasing decreases the width of the depletion region, allowing majority carriers to flow more easily across the junction and conduct current.
tunnel.ppt
The document provides an overview of junction diode characteristics and semiconductor physics concepts. It discusses the current components in p-n diodes and their volt-ampere characteristics. Key concepts covered include the energy band diagram of p-n diodes, their temperature dependence, and different types of diodes like Zener diodes, tunnel diodes, and varactor diodes. The document also discusses semiconductor doping, intrinsic and extrinsic semiconductors, diffusion and formation of the p-n junction, and the I-V characteristics of diodes.
PN Junction.pptx
The document discusses the P-N junction, which is formed at the interface between P-type and N-type semiconductors. It describes how doping the semiconductors with different impurities results in an excess or deficiency of electrons or holes. When the P and N-type materials are joined, charge carriers diffuse across the junction, leaving an electric field. This P-N junction exhibits rectifying behavior and has applications in diodes and transistors. The document also examines the I-V characteristics of a P-N junction diode under forward, reverse, and zero bias conditions.
Theory of solids
The document discusses the theory of solids, specifically semiconductors, conductors, and insulators. It describes the energy band structure and forbidden energy gaps that determine whether a material is a semiconductor, conductor, or insulator. It also discusses PN junction diodes, their I-V characteristics, and applications in rectifiers. Transistors are also briefly introduced.
pn-diode (1).pdf
1) A pn junction diode consists of a p-type semiconductor joined to an n-type semiconductor. When the two materials come together, electrons from the n-type region combine with holes from the p-type region, leaving an uncharged depletion region.
2) When a forward bias is applied, the depletion region narrows, lowering the barrier for majority carriers to flow across the junction. Under reverse bias, the depletion region widens, blocking most carrier flow.
3) Diodes are commonly made from silicon or germanium as the base semiconductor material. Doping one region with elements from group III makes it p-type, while doping the other with elements from group V makes it n-type
diodecurren-jntu.pdf
This document contains notes from a lecture on electronic devices and circuits given by Professor S. Srinivas Kumar from Jawaharlal Nehru Technological University Anantapur. The content of the fourth lecture included discussions on the open-circuited p-n junction, the p-n junction as a rectifier, the current components in a p-n diode, and the V-I characteristic of semiconductor diodes. The lecture also covered the temperature dependence of the V/I characteristic and included some example problems.
PN Junction 3.pptx
The PN Junction Diodes Part 3: Formation of PN junction diode, Formation of Barrier Voltage, Formation of Depletion region
Electronics ichapter1
The semiconductor diode is formed from a p-n junction between doped p-type and n-type semiconductor materials, which creates a depletion region that blocks current flow in reverse bias but allows it in forward bias. In forward bias, majority carriers recombine near the junction, reducing the depletion width and allowing an exponential increase in current; in reverse bias, carriers move away to widen the depletion region, only permitting small minority carrier currents. The diode's current-voltage relationship follows the diode equation, where current increases exponentially with forward voltage but remains very small in reverse bias.
KARAN FILE 1.docx
The document discusses the P-N junction, which is formed at the interface between p-type and n-type semiconductors. Doping one region of an intrinsic semiconductor with acceptors creates the p-type region with excess holes, while doping with donors creates the n-type region with excess electrons. When the p-type and n-type regions come into contact, diffusion of charge carriers across the junction creates an electric field and depletion region. The P-N junction exhibits different electrical characteristics and current flow depending on whether it is forward biased, reverse biased, or at zero bias.
PN_Junction_Diode_pn_juntion_Diode.pdf
A p-n junction diode consists of a p-type semiconductor joined to an n-type semiconductor. When the two materials are joined, charge carriers diffuse across the junction leaving a depletion region devoid of free carriers. This creates a built-in electric field.
When a p-n junction diode is forward biased, the depletion region narrows allowing majority carriers to flow more easily across the junction. When reverse biased, the depletion region widens blocking the flow of majority carriers and only allowing a small leakage current of minority carriers.
P-n junction diodes have applications as rectifiers, solar cells, LEDs, and are components of other semiconductor devices like transistors. The behavior of diodes is modeled by the
AE UNIT I.ppt
This document provides information about PN junction diodes and their characteristics:
1) It describes how a PN junction is formed by combining P-type and N-type semiconductors, forming a depletion region.
2) It explains the I-V characteristics of a diode under forward and reverse bias, including how the depletion region changes with bias.
3) Additional topics covered include drift and diffusion currents, temperature effects, capacitance effects, and recovery time characteristics important for switching applications. Special diodes like Zener diodes are also introduced.
Physics project
1. The document appears to be a student's physics project on building a half-wave rectifier circuit.
2. It includes a cover page with the student's name and school, a certificate signed by his teacher confirming completion of the project, and sections discussing the objectives, components, theory, and procedure of building the circuit.
3. The core of the project describes how a half-wave rectifier works, only allowing the positive half of the AC waveform to pass through the diode to the load resistance, thereby producing pulsating DC output.
Lec 13.pdf
This document summarizes key concepts about p-n junctions:
1) A p-n junction forms where p-doped and n-doped regions of silicon meet, creating a depletion region.
2) Under no bias, the p-n junction is in equilibrium with no net current as diffusion and drift currents cancel out.
3) Under forward bias, the depletion region narrows and diffusion current increases exponentially, resulting in a net current flow.
4) Under reverse bias, the depletion region widens and diffusion current decreases to near zero, leading to a small reverse drift current.
Analog electrons introduction
The document discusses fundamentals of electronics including passive components like resistors, capacitors, and inductors. It describes analog electronics circuits using transistors and op-amps. Digital electronics concepts like logic gates, microprocessors, RAM, and ROMs are covered. The document also provides details about diodes, their construction using P-type and N-type semiconductors to form a PN junction, and their operating characteristics in forward and reverse bias modes. Resistance and Ohm's law calculations are demonstrated.
Introduction to semiconductors
- The document discusses semiconductors and PN junction diodes. It covers topics like atomic structure of semiconductors, conduction in semiconductors, N-type and P-type semiconductors, the PN junction, forward and reverse biasing of the PN junction, and applications of PN junction diodes.
- A key point is that a PN junction diode allows current to flow easily in one direction but blocks it in the reverse direction. This is achieved by doping one side of silicon with an N-type dopant and the other side with a P-type dopant.
- Under forward bias, the voltage drop across the diode occurs due to
P-N junction
When a p-n junction is forward biased, the positive voltage repels holes from the p-region and the negative voltage repels electrons from the n-region, allowing both charge carriers to flow into the depletion region. This causes a current to flow from the positive to the negative region. When reverse biased, the voltages engulf the charge carriers, leaving behind ions and expanding the depletion region to cover the entire p and n regions. As a result, little to no current can flow through the diode.
BJT.ppt
The document discusses the bipolar junction transistor. It is bipolar because it involves the interaction of both majority and minority carriers for current conduction. It is a transistor because it functions as a transfer resistor that can take signals from a low resistance state and convert them into a higher resistance state.
More Related Content
Similar to Diode and Rectifier.ppt
PN Junction 2.pptx
When a p-type and n-type semiconductor are joined, electrons flow from the n-side to the p-side, leaving positive ions in the n-side and negative ions in the p-side. This forms an electric field called a depletion region that acts as a barrier. When a voltage is applied in the forward direction, it reduces the depletion region, allowing electrons and holes to flow more easily across the junction. This forms the basis of a p-n junction diode, which allows current to flow easily in one direction but blocks it in the other.
PN Junction 1.pptx
When a p-type and n-type semiconductor are joined, electrons flow from the n-side to the p-side, leaving positive ions in the n-side and negative ions in the p-side. This forms an electric field called a depletion region that acts as a barrier. When a voltage is applied in the forward direction, it reduces the depletion region, allowing electrons and holes to flow more easily across the junction. This forms the basis of a p-n junction diode, which allows current to flow easily in one direction but blocks it in the other.
PN Junction 2.pptx
When a p-type and n-type semiconductor are joined, electrons flow from the n-side to the p-side, leaving positive ions in the n-side and negative ions in the p-side. This forms an electric field called a depletion region that acts as a barrier. When a voltage is applied in the forward direction, it reduces the depletion region, allowing electrons and holes to flow more easily across the junction. This forms the basis of a p-n junction diode, which allows current to flow easily in one direction but blocks it in the other.
Diode.ppt
The document discusses diodes and p-n junctions. It begins with an introduction and outline then covers:
- Formation of p-n junctions through doping of n-type and p-type semiconductors.
- Energy band diagrams which show band structure changes at junction.
- Concepts of built-in potential and how diffusion generates an electric field and potential barrier.
- Forward and reverse bias modes, and how applied voltage affects carrier concentrations and barrier.
- Derivation of the diode I-V characteristic equation from diffusion equations.
- Linear piecewise models approximate the diode as a battery and resistor in series.
- Breakdown diodes operate
Class 12 th semiconductor part 3
This document discusses the formation and operation of p-n junction diodes. It describes three common methods for forming a p-n junction: alloying, diffusion, and vapor deposition. It explains key concepts such as the depletion region, barrier potential, drift and diffusion currents, and forward and reverse biasing. Forward biasing decreases the width of the depletion region, allowing majority carriers to flow more easily across the junction and conduct current.
tunnel.ppt
The document provides an overview of junction diode characteristics and semiconductor physics concepts. It discusses the current components in p-n diodes and their volt-ampere characteristics. Key concepts covered include the energy band diagram of p-n diodes, their temperature dependence, and different types of diodes like Zener diodes, tunnel diodes, and varactor diodes. The document also discusses semiconductor doping, intrinsic and extrinsic semiconductors, diffusion and formation of the p-n junction, and the I-V characteristics of diodes.
PN Junction.pptx
The document discusses the P-N junction, which is formed at the interface between P-type and N-type semiconductors. It describes how doping the semiconductors with different impurities results in an excess or deficiency of electrons or holes. When the P and N-type materials are joined, charge carriers diffuse across the junction, leaving an electric field. This P-N junction exhibits rectifying behavior and has applications in diodes and transistors. The document also examines the I-V characteristics of a P-N junction diode under forward, reverse, and zero bias conditions.
Theory of solids
The document discusses the theory of solids, specifically semiconductors, conductors, and insulators. It describes the energy band structure and forbidden energy gaps that determine whether a material is a semiconductor, conductor, or insulator. It also discusses PN junction diodes, their I-V characteristics, and applications in rectifiers. Transistors are also briefly introduced.
pn-diode (1).pdf
1) A pn junction diode consists of a p-type semiconductor joined to an n-type semiconductor. When the two materials come together, electrons from the n-type region combine with holes from the p-type region, leaving an uncharged depletion region.
2) When a forward bias is applied, the depletion region narrows, lowering the barrier for majority carriers to flow across the junction. Under reverse bias, the depletion region widens, blocking most carrier flow.
3) Diodes are commonly made from silicon or germanium as the base semiconductor material. Doping one region with elements from group III makes it p-type, while doping the other with elements from group V makes it n-type
diodecurren-jntu.pdf
This document contains notes from a lecture on electronic devices and circuits given by Professor S. Srinivas Kumar from Jawaharlal Nehru Technological University Anantapur. The content of the fourth lecture included discussions on the open-circuited p-n junction, the p-n junction as a rectifier, the current components in a p-n diode, and the V-I characteristic of semiconductor diodes. The lecture also covered the temperature dependence of the V/I characteristic and included some example problems.
PN Junction 3.pptx
The PN Junction Diodes Part 3: Formation of PN junction diode, Formation of Barrier Voltage, Formation of Depletion region
Electronics ichapter1
The semiconductor diode is formed from a p-n junction between doped p-type and n-type semiconductor materials, which creates a depletion region that blocks current flow in reverse bias but allows it in forward bias. In forward bias, majority carriers recombine near the junction, reducing the depletion width and allowing an exponential increase in current; in reverse bias, carriers move away to widen the depletion region, only permitting small minority carrier currents. The diode's current-voltage relationship follows the diode equation, where current increases exponentially with forward voltage but remains very small in reverse bias.
KARAN FILE 1.docx
The document discusses the P-N junction, which is formed at the interface between p-type and n-type semiconductors. Doping one region of an intrinsic semiconductor with acceptors creates the p-type region with excess holes, while doping with donors creates the n-type region with excess electrons. When the p-type and n-type regions come into contact, diffusion of charge carriers across the junction creates an electric field and depletion region. The P-N junction exhibits different electrical characteristics and current flow depending on whether it is forward biased, reverse biased, or at zero bias.
PN_Junction_Diode_pn_juntion_Diode.pdf
A p-n junction diode consists of a p-type semiconductor joined to an n-type semiconductor. When the two materials are joined, charge carriers diffuse across the junction leaving a depletion region devoid of free carriers. This creates a built-in electric field.
When a p-n junction diode is forward biased, the depletion region narrows allowing majority carriers to flow more easily across the junction. When reverse biased, the depletion region widens blocking the flow of majority carriers and only allowing a small leakage current of minority carriers.
P-n junction diodes have applications as rectifiers, solar cells, LEDs, and are components of other semiconductor devices like transistors. The behavior of diodes is modeled by the
AE UNIT I.ppt
This document provides information about PN junction diodes and their characteristics:
1) It describes how a PN junction is formed by combining P-type and N-type semiconductors, forming a depletion region.
2) It explains the I-V characteristics of a diode under forward and reverse bias, including how the depletion region changes with bias.
3) Additional topics covered include drift and diffusion currents, temperature effects, capacitance effects, and recovery time characteristics important for switching applications. Special diodes like Zener diodes are also introduced.
Physics project
1. The document appears to be a student's physics project on building a half-wave rectifier circuit.
2. It includes a cover page with the student's name and school, a certificate signed by his teacher confirming completion of the project, and sections discussing the objectives, components, theory, and procedure of building the circuit.
3. The core of the project describes how a half-wave rectifier works, only allowing the positive half of the AC waveform to pass through the diode to the load resistance, thereby producing pulsating DC output.
Lec 13.pdf
This document summarizes key concepts about p-n junctions:
1) A p-n junction forms where p-doped and n-doped regions of silicon meet, creating a depletion region.
2) Under no bias, the p-n junction is in equilibrium with no net current as diffusion and drift currents cancel out.
3) Under forward bias, the depletion region narrows and diffusion current increases exponentially, resulting in a net current flow.
4) Under reverse bias, the depletion region widens and diffusion current decreases to near zero, leading to a small reverse drift current.
Analog electrons introduction
The document discusses fundamentals of electronics including passive components like resistors, capacitors, and inductors. It describes analog electronics circuits using transistors and op-amps. Digital electronics concepts like logic gates, microprocessors, RAM, and ROMs are covered. The document also provides details about diodes, their construction using P-type and N-type semiconductors to form a PN junction, and their operating characteristics in forward and reverse bias modes. Resistance and Ohm's law calculations are demonstrated.
Introduction to semiconductors
- The document discusses semiconductors and PN junction diodes. It covers topics like atomic structure of semiconductors, conduction in semiconductors, N-type and P-type semiconductors, the PN junction, forward and reverse biasing of the PN junction, and applications of PN junction diodes.
- A key point is that a PN junction diode allows current to flow easily in one direction but blocks it in the reverse direction. This is achieved by doping one side of silicon with an N-type dopant and the other side with a P-type dopant.
- Under forward bias, the voltage drop across the diode occurs due to
P-N junction
When a p-n junction is forward biased, the positive voltage repels holes from the p-region and the negative voltage repels electrons from the n-region, allowing both charge carriers to flow into the depletion region. This causes a current to flow from the positive to the negative region. When reverse biased, the voltages engulf the charge carriers, leaving behind ions and expanding the depletion region to cover the entire p and n regions. As a result, little to no current can flow through the diode.
Similar to Diode and Rectifier.ppt (20)
More from GVijayakumari1
BJT.ppt
The document discusses the bipolar junction transistor. It is bipolar because it involves the interaction of both majority and minority carriers for current conduction. It is a transistor because it functions as a transfer resistor that can take signals from a low resistance state and convert them into a higher resistance state.
LASER DIODE.ppt
Laser diodes emit coherent light in which all waves are at the same frequency and phase. They use a p-n junction to produce a narrow beam of high intensity laser light via the processes of energy absorption, spontaneous emission, and stimulated emission. Laser diodes have applications in consumer electronics, medical devices, autonomous vehicles, scientific instruments, and industry due to their simple construction, small size, long operating life, high efficiency, and low power consumption.
LED.pptx
This document discusses doping, LEDs (light-emitting diodes), and their characteristics and applications. It explains that doping alters the characteristics of semiconductor materials by making them more positive or negative. It describes how LEDs use materials like gallium arsenide instead of silicon and emit light through electroluminescence when electrons recombine with holes, with the color depending on the energy band gap. LEDs have two leads, with one being the cathode and the other the anode, and their output depends on the current passing through. Advantages include high efficiency, low heat/maintenance, and long lifespan. Applications include displays, electronics, commercial/optical communications uses, and security systems.
JFET.ppt
This document discusses determining the value of drain current (ID) from a graph of drain current versus gate-source voltage (VGS). It also mentions comparing bipolar junction transistors (BJT) to field-effect transistors (FET).
MOSFET- Depletion Type MOSFET (Construction, working and Characteristics ).ppt
The document discusses the benefits of exercise for mental health. Regular physical activity can help reduce anxiety and depression and improve mood and cognitive functioning. Exercise boosts blood flow, releases endorphins, and promotes changes in the brain which help enhance one's emotional well-being and mental clarity.
IGBT AND SCR.pptx
The document discusses the insulated gate bipolar transistor (IGBT), a three-terminal power semiconductor device that combines the characteristics of a metal–oxide–semiconductor field-effect transistor (MOSFET) and a bipolar junction transistor (BJT). The IGBT has a gate, collector, and emitter terminals, with the collector and emitter serving as the conduction path and the gate controlling the flow of current. It combines the low saturation voltage of a BJT with the high input impedance and switching speed of a MOSFET, allowing for large collector-emitter currents with almost zero gate current.
More from GVijayakumari1 (9)
MOSFET- Depletion Type MOSFET (Construction, working and Characteristics ).ppt
MOSFET- Depletion Type MOSFET (Construction, working and Characteristics ).ppt
Recently uploaded
LLM Fine Tuning with QLoRA Cassandra Lunch 4, presented by Anant
Slides for the 4th Presentation on LLM Fine-Tuning with QLoRA Presented by Anant, featuring DataStax Astra
Harnessing WebAssembly for Real-time Stateless Streaming Pipelines
Traditionally, dealing with real-time data pipelines has involved significant overhead, even for straightforward tasks like data transformation or masking. However, in this talk, we’ll venture into the dynamic realm of WebAssembly (WASM) and discover how it can revolutionize the creation of stateless streaming pipelines within a Kafka (Redpanda) broker. These pipelines are adept at managing low-latency, high-data-volume scenarios.
CHINA’S GEO-ECONOMIC OUTREACH IN CENTRAL ASIAN COUNTRIES AND FUTURE PROSPECT
The rivalry between prominent international actors for dominance over Central Asia's hydrocarbon
reserves and the ancient silk trade route, along with China's diplomatic endeavours in the area, has been
referred to as the "New Great Game." This research centres on the power struggle, considering
geopolitical, geostrategic, and geoeconomic variables. Topics including trade, political hegemony, oil
politics, and conventional and nontraditional security are all explored and explained by the researcher.
Using Mackinder's Heartland, Spykman Rimland, and Hegemonic Stability theories, examines China's role
in Central Asia. This study adheres to the empirical epistemological method and has taken care of
objectivity. This study analyze primary and secondary research documents critically to elaborate role of
china’s geo economic outreach in central Asian countries and its future prospect. China is thriving in trade,
pipeline politics, and winning states, according to this study, thanks to important instruments like the
Shanghai Cooperation Organisation and the Belt and Road Economic Initiative. According to this study,
China is seeing significant success in commerce, pipeline politics, and gaining influence on other
governments. This success may be attributed to the effective utilisation of key tools such as the Shanghai
Cooperation Organisation and the Belt and Road Economic Initiative.
Use PyCharm for remote debugging of WSL on a Windo cf5c162d672e4e58b4dde5d797...
This document serves as a comprehensive step-by-step guide on how to effectively use PyCharm for remote debugging of the Windows Subsystem for Linux (WSL) on a local Windows machine. It meticulously outlines several critical steps in the process, starting with the crucial task of enabling permissions, followed by the installation and configuration of WSL.
The guide then proceeds to explain how to set up the SSH service within the WSL environment, an integral part of the process. Alongside this, it also provides detailed instructions on how to modify the inbound rules of the Windows firewall to facilitate the process, ensuring that there are no connectivity issues that could potentially hinder the debugging process.
The document further emphasizes on the importance of checking the connection between the Windows and WSL environments, providing instructions on how to ensure that the connection is optimal and ready for remote debugging.
It also offers an in-depth guide on how to configure the WSL interpreter and files within the PyCharm environment. This is essential for ensuring that the debugging process is set up correctly and that the program can be run effectively within the WSL terminal.
Additionally, the document provides guidance on how to set up breakpoints for debugging, a fundamental aspect of the debugging process which allows the developer to stop the execution of their code at certain points and inspect their program at those stages.
Finally, the document concludes by providing a link to a reference blog. This blog offers additional information and guidance on configuring the remote Python interpreter in PyCharm, providing the reader with a well-rounded understanding of the process.
International Conference on NLP, Artificial Intelligence, Machine Learning an...
International Conference on NLP, Artificial Intelligence, Machine Learning and Applications (NLAIM 2024) offers a premier global platform for exchanging insights and findings in the theory, methodology, and applications of NLP, Artificial Intelligence, Machine Learning, and their applications. The conference seeks substantial contributions across all key domains of NLP, Artificial Intelligence, Machine Learning, and their practical applications, aiming to foster both theoretical advancements and real-world implementations. With a focus on facilitating collaboration between researchers and practitioners from academia and industry, the conference serves as a nexus for sharing the latest developments in the field.
ACEP Magazine edition 4th launched on 05.06.2024
This document provides information about the third edition of the magazine "Sthapatya" published by the Association of Civil Engineers (Practicing) Aurangabad. It includes messages from current and past presidents of ACEP, memories and photos from past ACEP events, information on life time achievement awards given by ACEP, and a technical article on concrete maintenance, repairs and strengthening. The document highlights activities of ACEP and provides a technical educational article for members.
KuberTENes Birthday Bash Guadalajara - K8sGPT first impressions
K8sGPT is a tool that analyzes and diagnoses Kubernetes clusters. This presentation was used to share the requirements and dependencies to deploy K8sGPT in a local environment.
哪里办理(csu毕业证书)查尔斯特大学毕业证硕士学历原版一模一样
原版一模一样【微信：741003700 】【(csu毕业证书)查尔斯特大学毕业证硕士学历】【微信：741003700 】学位证，留信认证（真实可查，永久存档）offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
本公司拥有海外各大学样板无数，能完美还原海外各大学 Bachelor Diploma degree, Master Degree Diploma
1:1完美还原海外各大学毕业材料上的工艺：水印，阴影底纹，钢印LOGO烫金烫银，LOGO烫金烫银复合重叠。文字图案浮雕、激光镭射、紫外荧光、温感、复印防伪等防伪工艺。材料咨询办理、认证咨询办理请加学历顾问Q/微741003700
留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
6:个人职称评审加20分
7:个人信誉贷款加10分
8:在国家人才网主办的国家网络招聘大会中纳入资料，供国家高端企业选择人才
Optimizing Gradle Builds - Gradle DPE Tour Berlin 2024
Sinan from the Delivery Hero mobile infrastructure engineering team shares a deep dive into performance acceleration with Gradle build cache optimizations. Sinan shares their journey into solving complex build-cache problems that affect Gradle builds. By understanding the challenges and solutions found in our journey, we aim to demonstrate the possibilities for faster builds. The case study reveals how overlapping outputs and cache misconfigurations led to significant increases in build times, especially as the project scaled up with numerous modules using Paparazzi tests. The journey from diagnosing to defeating cache issues offers invaluable lessons on maintaining cache integrity without sacrificing functionality.
BRAIN TUMOR DETECTION for seminar ppt.pdf
BRAIN TUMOR DETECTION
AND CLASSIFICATION USING
ARTIFICIAL INTELLIGENCE
一比一原版(CalArts毕业证)加利福尼亚艺术学院毕业证如何办理
CalArts毕业证学历书【微信95270640】CalArts毕业证’圣力嘉学院毕业证《Q微信95270640》办理CalArts毕业证√文凭学历制作{CalArts文凭}购买学历学位证书本科硕士,CalArts毕业证学历学位证【实体公司】办毕业证、成绩单、学历认证、学位证、文凭认证、办留信网认证、（网上可查，实体公司，专业可靠）
(诚招代理)办理国外高校毕业证成绩单文凭学位证,真实使馆公证（留学回国人员证明）真实留信网认证国外学历学位认证雅思代考国外学校代申请名校保录开请假条改GPA改成绩ID卡
1.高仿业务:【本科硕士】毕业证,成绩单（GPA修改）,学历认证（教育部认证）,大学Offer,,ID,留信认证,使馆认证,雅思,语言证书等高仿类证书；
2.认证服务: 学历认证（教育部认证）,大使馆认证（回国人员证明）,留信认证（可查有编号证书）,大学保录取,雅思保分成绩单。
3.技术服务：钢印水印烫金激光防伪凹凸版设计印刷激凸温感光标底纹镭射速度快。
办理加利福尼亚艺术学院加利福尼亚艺术学院毕业证文凭证书流程：
1客户提供办理信息：姓名生日专业学位毕业时间等（如信息不确定可以咨询顾问：我们有专业老师帮你查询）；
2开始安排制作毕业证成绩单电子图；
3毕业证成绩单电子版做好以后发送给您确认；
4毕业证成绩单电子版您确认信息无误之后安排制作成品；
5成品做好拍照或者视频给您确认；
6快递给客户（国内顺丰国外DHLUPS等快读邮寄）
-办理真实使馆公证（即留学回国人员证明）
-办理各国各大学文凭（世界名校一对一专业服务,可全程监控跟踪进度）
-全套服务：毕业证成绩单真实使馆公证真实教育部认证。让您回国发展信心十足！
（详情请加一下 文凭顾问+微信:95270640）欢迎咨询！子小伍玩小伍比山娃小一岁虎头虎脑的很霸气父亲让山娃跟小伍去夏令营听课山娃很高兴夏令营就设在附近一所小学山娃发现那所小学比自己的学校更大更美操场上还铺有塑胶跑道呢里面很多小朋友一班一班的快快乐乐原来城里娃都藏这儿来了怪不得平时见不到他们山娃恍然大悟起来吹拉弹唱琴棋书画山娃都不懂却什么都想学山娃怨自己太笨什么都不会斟酌再三山娃终于选定了学美术当听说每月要交元时父亲犹豫了山娃也说爸算了吧咱学校一学期才转
Computational Engineering IITH Presentation
This Presentation will give you a brief idea about what Computational Engineering at IIT Hyderabad has to offer.
Electric vehicle and photovoltaic advanced roles in enhancing the financial p...
Climate change's impact on the planet forced the United Nations and governments to promote green energies and electric transportation. The deployments of photovoltaic (PV) and electric vehicle (EV) systems gained stronger momentum due to their numerous advantages over fossil fuel types. The advantages go beyond sustainability to reach financial support and stability. The work in this paper introduces the hybrid system between PV and EV to support industrial and commercial plants. This paper covers the theoretical framework of the proposed hybrid system including the required equation to complete the cost analysis when PV and EV are present. In addition, the proposed design diagram which sets the priorities and requirements of the system is presented. The proposed approach allows setup to advance their power stability, especially during power outages. The presented information supports researchers and plant owners to complete the necessary analysis while promoting the deployment of clean energy. The result of a case study that represents a dairy milk farmer supports the theoretical works and highlights its advanced benefits to existing plants. The short return on investment of the proposed approach supports the paper's novelty approach for the sustainable electrical system. In addition, the proposed system allows for an isolated power setup without the need for a transmission line which enhances the safety of the electrical network
The Python for beginners. This is an advance computer language.
Python language is very important language at this time. we can easily understand this language by these notes.
Recently uploaded (20)
LLM Fine Tuning with QLoRA Cassandra Lunch 4, presented by Anant
LLM Fine Tuning with QLoRA Cassandra Lunch 4, presented by Anant
Harnessing WebAssembly for Real-time Stateless Streaming Pipelines
Harnessing WebAssembly for Real-time Stateless Streaming Pipelines
CHINA’S GEO-ECONOMIC OUTREACH IN CENTRAL ASIAN COUNTRIES AND FUTURE PROSPECT
CHINA’S GEO-ECONOMIC OUTREACH IN CENTRAL ASIAN COUNTRIES AND FUTURE PROSPECT
Use PyCharm for remote debugging of WSL on a Windo cf5c162d672e4e58b4dde5d797...
Use PyCharm for remote debugging of WSL on a Windo cf5c162d672e4e58b4dde5d797...
International Conference on NLP, Artificial Intelligence, Machine Learning an...
International Conference on NLP, Artificial Intelligence, Machine Learning an...
ML Based Model for NIDS MSc Updated Presentation.v2.pptx
ML Based Model for NIDS MSc Updated Presentation.v2.pptx
KuberTENes Birthday Bash Guadalajara - K8sGPT first impressions
KuberTENes Birthday Bash Guadalajara - K8sGPT first impressions
Optimizing Gradle Builds - Gradle DPE Tour Berlin 2024
Optimizing Gradle Builds - Gradle DPE Tour Berlin 2024
Manufacturing Process of molasses based distillery ppt.pptx
Manufacturing Process of molasses based distillery ppt.pptx
Electric vehicle and photovoltaic advanced roles in enhancing the financial p...
Electric vehicle and photovoltaic advanced roles in enhancing the financial p...
The Python for beginners. This is an advance computer language.
The Python for beginners. This is an advance computer language.
Diode and Rectifier.ppt
- 2. P-N JUNCTION :-A p–n junction is a boundary or interface between two types of semiconductor material, p- type and n-type, inside a single crystal of semiconductor. It is created by doping.
- 3. Electronic Symbol …..the triangle shows indicated the direction of current Depletion layer forms an insulator between the 2 sides P type N type
- 4. Formation of depletion layer the excess electrons in the N region cross the junction and combine with the excess holes in the P region. N region loses its electrons ……becomes + vlY charged P region accepts the electrons ……becomes –vly charged At one point , the migratory action is stopped.
- 5. An additional electrons from the N region are repelled by the net negative charge of the p region. Similarly, An additional holes from the P region are repelled by the net positive charge of the n region. Net result a creation of a thin layer of each side of the junction ……….which is depleted (emptied) of mobile charge carriers…. This is known as DEPLETION LAYER ..Thickness is of the order of 10-6meter.
- 6. The depletion layer contains no free and mobile charge carriers but only fixed and immobile ions. Its width depends upon the doping level.. Heavy doped……..thin depletion layer lightly doped……..thick depletion layer
- 7. POTENTIAL BARRIER The electrons in the N region have to climb the potential hill in order to reach the P region Electrons trying to cross from the N region to P region experience a retarding field of the battery and therefore repelled. Similarly for holes from P region. Potential thus produced are called ..potential barrier Ge..0.3 V Si ..0.7V
- 8. PN junction can basically work in two modes, (A battery is connected to the diode ) forward bias mode ( positive terminal connected to p-region and negative terminal connected to n region) reverse bias mode ( negative terminal connected to p-region and positive terminal connected to n region) .
- 9. Forward biased PN junction . It forces the majority charge carriers to move across the junction ….decreasing the width of the depletion layer.
- 10. Once the junction is crossed, a number of electrons and the holes will recombine . For each hole in the P section that combines with an electron from the N section, a covalent bond breaks and an electron is liberatyed which enters the positive terminal Thus creating an electron hole pair. Current in the N region is carried by ….electrons Current in the P region is carried by …. Holes.
- 11. Reverse biased pn junction If the + of the battery is connected to the n-type and the – terminal to the p-type, the free electrons and free holes are attracted back towards the battery, hence back from the depletion layer, hence the depletion layer grows. Thus a reverse biased pn junction does not conduct current.
- 12. Thus the P N junction diode allows the electrons flow only when P is positive . This property is used for the conversion of AC into DC ,Which is called rectification.
- 14. ADVANTAGES: No filament is necessary Occupies lesser space Long life.
- 15. APPLICATIONS- ….as rectifiers to convert AC into DC. As an switch in computer circuits. As detectors in radios to detect audio signals As LED to emit different colours.
- 31. Thank you