Rajbir Singh is a Senior Project Fellow at the National Physical Laboratory in New Delhi researching thin film processing, photovoltaics, nanomaterials, and high-K dielectrics. He has a M.Tech in Microelectronics from Kurukshetra University and work experience in atomic layer deposition, surface passivation, and solar cell simulation. He has published research on silicon surface passivation using ALD-deposited films and presented posters at conferences.

1. Curriculum Vitae
Rajbir Singh
SRH-25, NPL Colony, New Rajender Nagar
New Delhi-110012
Mobile: +91-8587818733
E-mail: rajbir.gogayan@gmail.com
Research Interest
• Processing of thin films
• Photovoltaic cells & Optoelectronic devices
• Nanomaterial & its electronic properties
• High K dielectrics for surface passivation of solar cells
Educational Qualification
Master of Technology (M.Tech.) in Microelectronics & VLSI Design in 2011 from Kurukshetra University
Kurukshetra, India with 67%
Master of Science (M.Sc.) in Electronics in 2009 from Kurukshetra University, Kurukshetra, India with 65%.
Bachelor of Science (B.Sc.) in Electronics, in 2006 from Kurukshetra University, Kurukshetra, India with 68%.
Work Experience
Feb 2013 to till Date: Senior Project Fellow at National physical Laboratory, New Delhi-110012
Oct 2011 to Feb 2013: Assistant Professor at Galaxy Institute of Technology and Mgt, Karnal
Research Experience
• Presently engage in Govt. Funded R & D as a Senior Project Fellow in a project entitled “Efficient silicon
photovoltaic’s with smart electronics and lighting systems” in Silicon Solar Cells Group, NPL (New Delhi) using
concepts such as:
• Rear and front Si surface passivation by Atomic Layer Deposited (ALD) Aluminium oxide.
• Contact optimization to the passivated Si by opening channels and polka dots.
• Simulation of Si solar cell performance by integrating these concepts.
• Technical and Analytical skills learned: Atomic Layer Deposition (PicoSun/Thermal, Plasma and
Ozone ALD), e-beam evaporation (Hind HIVAC), Capacitance-Voltage technique (Solartron),
Charge Carrier Lifetime measurement (Sinton), Solar cell current-voltage and spectral response
(Newport, Oriel), Impedance Spectroscopy (Gamry), Ellipsometry, SENTAURUS TCAD and PC1D.

2. Experience in Semiconductor Processing
Well versed in handling the following sophisticated Instruments:
• RF/VHF PECVD system for Silicon thin films.
• Sputtering System.
• Atomic Layer Deposition (ALD) system
• E-beam and Thermal Vacuum coating Unit for metallization.
• Rapid Thermal Process, Implantation, Diffusion, Lithography, Light Induced Plating, Moulding, Wafer
Profilometer.
Operation & analysis of Fourier transform Infrared spectroscopy (FTIR), UV-Vis Spectroscopy, Thermal Conductivity
measurement, Current Voltage measurement (I~V), Capacitance Voltage (C~V), Lifetime Measurement System
(Sinton: WCT-120), Impedance Spectroscopy,
Research Publications & Workshop
1. Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation,
Neha Batra, Jhuma Gope, Vandana, Jagannath Panigrahi, Rajbir Singh, and P. K. Singh, AIP Advances 5,
067113 (2015); doi: 10.1063/1.4922267.
2. Silicon surface passivation using thin HfO2 films by atomic layer deposition, Jhuma Gope, Vandana, Neha
Batra, Jagannath Panigrahi, Rajbir Singh, K.K.Maurya, Ritu Srivastava, P.K.Singh, Applied Surface Science/
10.1016/j.apsusc.2015.09.020.
3. Poster presentation on “Silicon surface passivation by hafnium oxide thin films deposited using plasma
assisted atomic layer deposition” presented at IWPSD-2015 held IISc, Bangalore.
4. Poster presentation on “Impedance Spectroscopy of Al2O3 film deposited using Atomic Layer Deposition
method” presented at ICSET-2014 held at Coimbatore.
5. Study of Aluminum Oxide Films Deposited using Thermal ALD and Effect of Low Thermal Budget Annealing,
Vandana, Neha Batra, Jhuma Gope, Rajbir Singh, J. Panigrahi, CMS Rauthan, S K Srivastava, P Pathi, P K
Singh, Physical Chemistry Chemical Physics 16, 21804 (2014).
6. “Dual Metal Gate and Conventional MOSFET at Sub nm for Analog Application” by Sonal Aggarwal, Rajbir
Singh; Paper published in International Journal of VLSI Design & Communication systems (VLSICS)
Vol.3,No.1,Feb 2012.
7. National Level Symposium on Electronics & Technology, Kurukshetra University Kurukshetra, India. April 22-
23, 2008 & 2010.
8. National workshop on “Challenges and Opportunities in Analog and Mixed Signal Design”, Kurukshetra
University, Kurukshetra, India. Feb 22-23, 2010

3. Personal Information
Full Name Rajbir Singh
DOB 18-08-1985
Sex Male
Marital Status Single
References:
Declaration
I do hereby declare that all the information stated above are true and correct to the best of my knowledge and belief.
Rajbir Singh
Prof. Anil Vohra,
Department of Electronic Science,
Kurukshetra University Kurukshetra
e-mail: Email-anilvohra@kuk.ac.in
Mobile No.:+91-9355222388,
Dr. B. Prasad
Department of Electronic Science
Kurukshetra University Kurukshetra
e-mail: bprasad@kuk.ac.in,
Phone No.:+91-9416175523
Dr. P.K.Singh
Chief Scientist
Silicon Solar Cell Group
Physics of Energy Harvesting Division,
National Physical Laboratoy, New Delhi
e-mail: pksingh@nplindia.org
Dr. Vandana
Scientist
Silicon Solar Cell Group
Physics of Energy Harvesting Division,
National Physical Laboratoy, New Delhi
e-mail: vandana11@gmail.com