1. Resume
masadirad@uh.edu
Cell: (573) 424-7082
Page 1
QUALIFICATIONS
EDUCATION
PhD in Materials Science &
Engineering, University of Houston, TX,
May 2016, GPA: 3.92/4.00
MS in Materials Science & Engineering,
Sharif University of Technology,
Tehran, Iran, January 2011, GPA:
3.70/4.00
BS in Materials Engineering, Ferdowsi
University of Mashhad, Iran,
September 2008, GPA: 3.53/4.00
MEMBERSHIPS
AND AFFILIATIONS
-IEEE student member, 2013-present
-Optical Society of America (OSA),
2013-present
-American Physical Society (APS),
2015-present
-SPIE, 2016-presnet
-Houston Electrical League, 2015-
presnet
AWARDS/HONORS
-Presidential Endowed Fellowship,
University of Houston, 2013-2014
-Graduate Tuition Fellowship,
University of Houston, 2013-2016
-American Bureau of Shipping -
Scholarship, 2014
-Bidani Scholarship, 2015
-TcSUH travel Award (57th EMC, Ohio
State University), 2015
-Houston Electrical League
Scholarship-TcSUH, 2015
-Iranian Nanotechnology Initiative
Council Master’s Thesis Award, 2012
-Nominated for the best poster, 43rd
PVSC, Portland, OR, 2016
RELEVANT COURSEWORKS
Microlithography for micro- and
nanosystems, Thin-film technology,
Solar energy and nanomaterials,
Physical properties of materials, IC
engineering, Advanced process
integration for VLSI, VLSI design,
Semiconductor materials and photonic
and electronic devices
LANGUAGES
English and Persian
Mojtaba Asadirad
SEMICONDUCTOR PROCESS DEVELOPMENT ENGINEER, PHD
Materials engineer with ~4 years of experience in solid-state device
engineering and process development. Demonstrated success completing
research projects on time and within budget. Highly educated holds a PhD
degree in Materials Science.
Extensive experience with all major aspects of semiconductor process
development and integration, device fabrication and design, characterization,
and volume manufacturing, especially in the areas of group IV (MOSFETs,
TFTs) and III-V semiconductor materials and devices. Showed proactive
troubleshooting and aggressive problem solving skills working on new projects
and instrumentation.
Areas of Expertise
• Mastery in semiconductor processes
• Solid state device physics - TCAD
• New product and process startup
• Microfabrication of semiconductor devices
• Thin film processes for wafer fabrication
• Strong data analysis skills
• Process & device integration
• Flexible electronics and optoelectronics
• Photovoltaic devices and design
• Failure and root cause analysis
• Nanotechnology
• CAD layout design
Specialization
Device fabrication include mask design, Plasma processes, wet and dry
etching, Photolithography, Thermal evaporation/oxidation, Rapid thermal
processes, Ion implantation, Liftoff, Metallization, TLM
Instruments
Device characterization tools, Ellipsometer, Profilometer, UV-Vis
spectrophotometer, Hall measurement, Thermal/e-beam evaporator,
Plasmatherm, PVD, PECVD, Spin coater, RTP, Reactive ion etcher (RIE Oxford
180), Mask aligner, Solar cell simulator (Newport)
Materials Analysis Tools
AFM, XRD, SEM, EDS, SIMS & Raman (familiar with analysis)
Application Softwares
Python, Linux, SILVACO (TCAD), PVCell, AutoCAD, Rihnoceros, SRIM
2. Resume
MOJTABA ASADIRAD
SEMICONDUCTOR PROCESS DEVELOPMENT ENGINEER, PHD
2
Relevant Project Experience
US Department of Energy EERE SunShot Initiative
Next-Generation Photovoltaic Technologies III
Start/End Dates: 01/2014 to present
Scope/Description:
• High Efficiency, inexpensive thin film III-V Photovoltaics using single-crystalline-like, flexible substrates.
Responsibilities:
• Proposal writing submitted to DOE SunShot initiative program (1.5 million awarded).
• Provided critical solutions in development of solar cells on flexible substrates.
• Developed and optimized device structures via simulation to improve GaAs solar cell performance.
• Designed new mask for III-V solar cells including front illumination geometry.
• Successfully demonstrated thin film III-V PV devices.
• Demonstrated new prototype PV devices
University of Houston, Houston, TX
UH Cleanroom, Science and Engineering Research Center
Energy Device Fabrication Lab, Energy Research Park
Semiconductor Device Fabrication
Start/End Dates: 01/2013 to present
Scope/Description:
• High-performance flexible electronics and optoelectronics on low-cost bendable and scalable substrates.
Responsibilities:
• Provided disruptive technological platforms for next-generation flexible device technology.
• Demonstrated high-performance flexible transistors based on highly-oriented Si/Ge on metal tape and glass.
• Trained new graduate students for semiconductor device fabrication and characterization.
• Collaborated effectively with a large multidisciplinary team of scientists and PhD students developing novel
flexible electronics and optoelectronics.
• Performed metallization and thermal processes for Ohmic contact formation in group IV and compound
semiconductor devices.
• Performed wet and plasma etching (RIE) of semiconductor thin films and oxide materials.
• Performed metrology of thin film materials for flexible devices.
• Designed and developed recipe for photolithography of flexible devices including mask design, photoresist,
spin coating, patterning, ashing, development.
University of Houston & LG Innotek
University of Houston & Georgia Institute of Technology
Wafer-Level Chip-Scale Package (WLP)
GaN-based Light Emitting Diodes
Start/End Dates: 01/2013 to 01/2015
Scope/Description:
• Processing of the LEDs by employing thin-film flip-chip (TFFC) devices and wafer-level chip-scale package
(WLCSP) with a through-silicon-via (TSV) substrate and a stress-compensated GaN-on-Si platform.
• Direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through
laser interference ablation for the fast and reliable fabrication of periodic micro-and nano-structures aimed at
enhancing light output.
Responsibilities:
• Analyzed the data and wrote the manuscript.
• Characterized the devices
3. Resume
MOJTABA ASADIRAD
SEMICONDUCTOR PROCESS DEVELOPMENT ENGINEER, PHD
3
Professional Activities/Services
• Judge, The International Sustainable World (Energy, Engineering, and Environment) Project Olympiad 2016 (I-
SWEEP-2016), George R. Brown Convention Center, Houston, Texas, April 29, 2016.
• UH TcSUH representative, Energy Day Houston 2014, Sam Houston Park, Houston, Texas, Oct. 18, 2014.
• Official Reviewer of Optics Express
• Official Reviewer of IEEE-Electron Device Letters
Selected Peer-Reviewed Publications
• M. Asadirad, et al., “High-performance flexible thin-film transistors based on single-crystal-like Germanium on
glass” Advanced Electronic Materials (2016) DOI: 10.1002/aelm.201600041(this work is selected as a cover
photo for the issue of August 2016)
• Y. Gao*, M. Asadirad*, et al., “High-performance flexible thin-film transistors based on single-crystal-like Si
epitaxially grown on metal tape by roll-to-roll continuous deposition process” accepted for publication ACS Applied
Materials & Interfaces (2016) (*equally contributed)
• M. Asadirad, et al., “Numerical Simulation for Operation of Flexible Thin-Film Transistors with Bending” submitted
for publication to IEEE electron device letters (2016).
• K-H. Lee, M. Asadirad, et al., “Thin-film-flip-chip LEDs grown on Si substrate using wafer-level chip-scale
package” IEEE Photonics Technology Letters 28 (18) (2016).
• S. Shervin, S-H. Kim, M. Asadirad, et al., “Bendable III-N Visible Light- Emitting Diodes beyond Mechanical
Flexibility: Theoretical Study on Quantum Efficiency Improvement and Color Tunability by External Strain” ACS
Photonics 3 (3), 486-493 (2016) (this work is selected as a cover photo for the issue of March 2016)
• S. Shervin, S-H. Kim, M. Asadirad, et al., “Strain-effect transistors: effects of external strain on III-nitride high-
electron-mobility transistors (HEMT) on flexible substrates” Applied Physics Letters 107 (19), 193504 (2015).
• K-H. Lee, H-J. Park, S-H. Kim, M. Asadirad, et al., “Light-extraction efficiency control in AlGaN-based deep-
ultraviolet flip-chip light-emitting diodes: a comparison to InGaN- based visible flip-chip light-emitting diodes”
Optics Express 23 (16), 20340-20349 (2015).
• S-H Kim, S. Singh, S-K Oh, D-K Lee, K-H Lee, S. Shervin, M. Asadirad, et al., “Visible Flip-Chip Light-Emitting
Diodes on Flexible Ceramic Tape Substrate with Improved Thermal Management” IEEE electron device letters 37
(5) 615-617 (2016).
• J. Kim, M-H. Ji, D. Yuan, R. Guo, J. Liu, M. Asadirad, et al., “Direct periodic patterning of GaN-based light-
emitting diodes by three-beam interference laser ablation” Applied Physics Letters, 104, 141105 (2014).
• J-H. Ryou, J. Kim, S. Choi, H-J. Kim, Z. Lochner, M-H. Ji, M.M. Satter, T. Detchprohm, P.D. Yoder, R.D. Dupuis,
M. Asadirad, et al., “Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-
Based visible light-emitting diodes” ECS Trans. 61(4), 109-116 (2014).
• S-H Kim, K-H Lee, H-J Park, S. Shervin, M. Asadirad, et al., “Patterned Ga2O3 for current blocking and optical
scattering in visible light-emitting diodes” Physica Status Solidi A (2016) DOI: 10.1002/pssa.201600240
• M. Asadirad, H. Yoozbashizadeh “Synthesis and characterization of Ce-TZP/Al2O3 nanocomposites prepared via
aqueous combustion” J. Alloys Compd., vol. 514, pp. 150-156, 2012.
• M.S. Doolabi, S.K. Sadrnezhaad, D.S. Doolabi, M. Asadirad “Influence of pulse parameters on
electrocodeposition of Cr-Al2O3 nanocomposite coatings from trivalent chromium bath” Int. Heat Treat. Surf. Eng.,
vol. 6, no. 4, pp. 178-184, 2012.
4. Resume
MOJTABA ASADIRAD
SEMICONDUCTOR PROCESS DEVELOPMENT ENGINEER, PHD
4
Selected Conference Presentations
• M. Asadirad, M. Rathi, S. Pouladi, Y. Yao, P. Dutta, S. Shervin, K-H Lee, N. Zheng, P. Ahrenkiel, V.
Selvamanickam, and J-H Ryou “III-V Thin-Film Photovoltaic Solar Cells Based on Singl-Crystal-Like GaAs Grown
on Flexible Metal Tapes” 43rd IEEE PVSC, June 5-10, 2016, Portland, OR, USA.
• M. Asadirad, Y. Gao, P. Dutta, Y. Yao, S. Shervin, S. Pouladi, K-H Lee, S-H Kim, V. Selvamanickam and J-H
Ryou “High-Performance Thin-Film Transistors Based on Single-Crystal-Like Si and Ge Epitaxially Grown on Metal
and Flexible Glass Tapes” 58th Electronics Materials Conference at University of Delaware, June 22-24, 2016, DE,
USA.
• M. Asadirad, Y. Gao, P. Dutta, Y. Yao, S. Shervin, S. Pouladi, K-H Lee, S-H Kim, V. Selvamanickam and J-H
Ryou “Thin-Film Transistors Based on Single-Crystal-Like Ge Epitaxially Grown on Flexible Glass” 57th Electronics
Materials Conference at Ohio State University, June 24-27, 2015, OH, USA.
• M. Rathi, P. Dutta, Y. Yao, Y. Gao, M. Asadirad, N. Zheng, P. Ahrenkiel, J-H Ryou, V. Selvamanickam “Thin film
III-V photovoltaics using single-crystalline-like, flexible substrates” 42nd IEEE PVSC, June 14-19, 2015, New
Orleans, LA, USA DOI:10.1109/PVSC.2015.7356232.
• A. Dolatmoradi, M. Asadirad, K. Dehghani, J. Vahdati “Formation of Nanocrystalline and Ultrafine-grained
Structures in Disk-shaped Samples of Fe-0.15 C and Interstitial-free (IF) Steels Produced by Ball Milling”
COM2010-49th Annual Conference of Metallurgist in conjunction with Lead-Zinc 2010.
